RSH070N05

4V Drive Nch MOSFET RSH070N05 Structure Silicon N-channel MOSFET Features 1) Built-in G-S Protection Diode. 2) Small Surface Mount Package (SOP8). Application Power switching, DC / DC converter, Inverter Each lead has same dimensions Dimensions (Unit : mm) SOP8 Packaging specifications Package Type RSH070N05 Code Basic ordering unit (pieces) Taping TB 2500 Inner circuit (8) (7) (6) (5) (8) (7) (6) (5) ∗2 ∗1 (2) (3) (4) (1) (2) (3) (4) Absolute maximum ratings (Ta=25C) Parameter Drain-source voltage Gate-source voltage Drain current Source current (Body diode) Continuous Pulsed Continuous Pulsed Symbol VDSS VGSS ID IDP IS ISP PD Tch Tstg *1 *1 *2 Total power dissipation Chanel temperature Range of Storage temperature *1 PW 10ｓ, Duty cycle1 *2 Mounted on a ceramic board Limits 45 20 ±7.0 ±28 1.6 28 2 150 -55 to +150 Unit V V A A A A W o o (1) ∗1 ESD Protection Diode. ∗2 Body Diode. (1) (2) (3) (4) (5) (6) (7) (8) Source Source Source Gate Drain Drain Drain Drain ∗ A protection diode is included between the gate and the source terminals to protect the diode against static electricity when the product is in use.Use a protection circuit when the fixed voltage are exceeded. C C Thermal resistance Parameter Chanel to ambient * Mounted on a ceramic board Symbol Rth(ch-a) * Limits 62.5 Unit o C/W www.rohm.com c ○ 2009 ROHM Co., Ltd. All rights reserved. 1/4 2009.12 - Rev.A RSH070N05 Electrical characteristics (Ta=25C) Parameter Symbol Min. − 45 − 1.0 − − − 6.0 − − − − − − − − − − Typ. − − − − 18 23 25 − 1000 230 125 16 27 57 21 12.0 3.0 4.6 Max. 10 − 1 2.5 25 32 35 − − − − − − − − 16.8 − − IGSS Gate-source leakage Drain-source breakdown voltage V(BR) DSS Zero gate voltage drain current IDSS Gate threshold voltage VGS (th) Static drain-source on-state resistance Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Total gate charge Gate-source charge Gate-drain charge ∗Pulsed Data Sheet RDS (on)∗ Yfs Ciss Coss Crss td (on) tr td (off) tf Qg Qgs Qgd ∗ ∗ ∗ ∗ ∗ ∗ ∗ ∗ Unit μA V μA V mΩ mΩ mΩ S pF pF pF ns ns ns ns nC nC nC Conditions VGS=20V, VDS=0V ID= 1mA, VGS=0V VDS= 45V, VGS=0V VDS= 10V, ID= 1mA ID=7A, VGS= 10V ID= 7A, VGS= 4.5V ID= 7A, VGS= 4.0V VDS= 10V, ID= 7A VDS= 10V VGS=0V f=1MHz VDD 25V ID= 3.5A VGS= 10V RL=7.1Ω RG=10Ω VDD 25V VGS= 5V ID= 7A RL=3.6Ω RG=10Ω Body diode characteristics (Source-Drain) (Ta=25C) Parameter Forward voltage * pulsed Symbol VSD * Min. － Typ. － Max. 1.2 Unit V Condition IS=1.6A/VGS=0V www.rohm.com c ○ 2009 ROHM Co., Ltd. All rights reserved. 2/4 2009.12 - Rev.A RSH070N05 Electrical characteristic curves 10 VDS=10V pulsed Ta=125oC 75oC 25oC -25oC Data Sheet 1000 Static Drain-Source On-State Resistance RDS(on) [m ] 1000 1 100 Static Drain-Source On-State Resistance RDS(on) [m ] VGS=10V pulsed Drain Current : ID [A] Ta=125oC 75oC 25oC -25oC VGS=4.5V pulsed 100 Ta=125oC 75oC 25oC -25oC 0.1 10 10 0.01 1.0 1.5 2.0 2.5 3.0 3.5 Gate-Source Voltage : VGS [V] 1 0.01 0.1 1 10 1 0.01 0.1 1 10 Drain Current : ID [A] Drain Current : ID [A] Fig.1 Typical Transfer Characteristics Fig.2 Static Drain-Source On-State Resistance vs. Drain Current (1) Fig.3 Static Drain-Source On-State Resistance vs. Drain Current (2) 1000 Static Drain-Source On-State Resistance RDS(on) [m] Static Drain-Source On-State Resistance RDS(on) [m] VGS=4V pulsed Source Current : Is [A] 100 Ta=125oC 75oC 25oC -25oC 100 Ta=25oC pulsed 10 VGS=0V pulsed Ta=125oC 75oC 25oC -25oC 80 1 60 ID=7.0A 10 40 0.1 20 ID=3.5A 1 0.01 0.1 1 10 Drain Current : ID [A] 0 0 5 10 15 20 Gate-Source Voltage : VGS [V] 0.01 0.0 0.5 1.0 1.5 Source-Drain Voltage : VSD [V] Fig.4 Static Drain-Source On-State Resistance vs. Drain Current (3) Fig.5 Static Drain-Source On-State Resistance vs. Gate-Source Voltage 10000 10 Fig.6 Source-Current vs. Source-Drain Voltage 10000 Ta=25oC f=1MHz VGS=0V Ciss Switching Time : t [ns] 1000 tf 100 Ta=25oC VDD=25V VGS=10V Ta=25oC 9 VDD=25V 8 ID=7A 7 6 5 4 3 2 1 0 0 5 10 15 20 RG=10 Pulsed 1000 Coss 100 Crss td(off) td(on) 10 tr 10 0.01 0.1 1 10 Drain-Source Voltage : VDS [V] 100 1 0.01 0.1 1 Drain Current : ID [A] 10 Gate-Source Voltage : VGS[V] Capacitance : C [pF] RG=10 Pulsed Total Gate Charge : Qg [nC] Fig.7 Typical capacitance vs. Source-Drain Voltage Fig.8 Switching Characteristics Fig.9 Dynamic Input Characteristics www.rohm.com c ○ 2009 ROHM Co., Ltd. All rights reserved. 3/4 2009.12 - Rev.A RSH070N05 Measurement circuits Pulse Width Data Sheet VGS ID RL D.U.T. VDS VGS VDS 50% 10% 10% 90% 50% 10% RG VDD td(on) ton 90% tr td(off) toff 90% tr Fig.10 Switching Time Test Circuit Fig.11 Switching Time Waveforms VG VGS ID RL IG (Const.) D.U.T. RG VDD VDS Qg VGS Qgs Qgd Charge Fig.12 Gate Charge Test Circuit Fig.13 Gate Charge Waveform www.rohm.com c ○ 2009 ROHM Co., Ltd. All rights reserved. 4/4 2009.12 - Rev.A Notice Notes No copying or reproduction of this document, in part or in whole, is permitted without the consent of ROHM Co.,Ltd. The content specified herein is subject to change for improvement without notice. The content specified herein is for the purpose of introducing ROHM's products (hereinafter "Products"). If you wish to use any such Product, please be sure to refer to the specifications, which can be obtained from ROHM upon request. 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