RSH090N03

4V Drive Nch MOSFET RSH090N03 Structure Silicon N-channel MOSFET Features 1) Low on-resistance. 2) Built-in G-S Protection Diode. 3) Small Surface Mount Package (SOP8). Application Power switching, DC / DC converter. Each lead has same dimensions Dimensions (Unit : mm) SOP8 Packaging specifications Package Type RSH090N03 Code Basic ordering unit (pieces) Taping TB 2500 Inner circuit (8) (7) (6) (5) (8) (7) (6) (5) ∗2 ∗1 (2) (3) (4) (1) (2) (3) (4) Absolute maximum ratings (Ta=25C) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Source Current (Body Diode) Pulsed Continuous Pulsed Symbol VDSS VGSS ID IDP ∗1 Is Isp PD ∗1 ∗2 Limits 30 20 ±9.0 ±36 1.6 18 2 150 −55 to +150 Unit V V A A A A W (1) ∗1 ESD Protection Diode. ∗2 Body Diode. (1) (2) (3) (4) (5) (6) (7) (8) Source Source Source Gate Drain Drain Drain Drain ∗ A protection diode is included between the gate and the source terminals to protect the diode against static electricity when the product is in use.Use a protection circuit when the fixed voltage are exceeded. Total Power Dissipation Channel Temperature Storage Temperature ∗1 Pw≤10μs, Duty cycle≤1% ∗2 Mounted on a ceramic board. Tch Tstg °C °C Thermal resistance Parameter Channel to Ambient ∗ Mounted on a ceramic board. Symbol Rth (ch-a) ∗ Limits 62.5 Unit °C / W www.rohm.com c ○ 2009 ROHM Co., Ltd. All rights reserved. 1/3 2009.12 - Rev.A RSH090N03 Electrical characteristics (Ta=25C) Parameter Gate-Source Leakage Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate Threshold Voltage Static Drain-Source On-State Resistance Forward Transfer Admittance Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Gate Charge Gate-Source Charge Gate-Drain Charge ∗Pulsed Data Sheet Symbol IGSS V (BR)DSS IDSS VGS (th) RDS (on)∗ l Yfs l ∗ Ciss Coss Crss td(on) ∗ tr ∗ td(off) tf ∗ ∗ Min. − 30 − 1.0 − − − 6.0 − − − − − − − − − − Typ. − − − − 11 15 17 − 810 225 160 10 13 46 15 11 2.5 4.5 Max. 10 − 1 2.5 16 22 24 − − − − − − − − 15 − − Unit μA V μA V mΩ S pF pF pF ns ns ns ns nC nC nC Test Conditions VGS=20V, VDS=0V ID=1mA, VGS=0V VDS=30V, VGS=0V VDS=10V, ID=1mA ID=9A, VGS=10V ID=9A, VGS=4.5V ID=9A, VGS=4V ID=9A, VDS=10V VDS=10V VGS=0V f=1MHz ID=4.5A, VDD 15V VGS=10V RL=3.33Ω RG =10Ω VDD 15V VGS=5V ID=9A Qg ∗ Qgs ∗ Qgd ∗ Body diode characteristics (Source-Drain) (Ta=25C) Parameter Forward Voltage ∗Pulsed Symbol VSD ∗ Min. − Typ. − Max. 1.2 Unit V Test Conditions Is=6.4A, VGS=0V www.rohm.com c ○ 2009 ROHM Co., Ltd. All rights reserved. 2/3 2009.12 - Rev.A RSH090N03 Electrical characteristic curves 10000 Data Sheet Ciss 1000 1000 tf td(off) GATE-SOURCE VOLTAGE: VGS (V) Ta=25°C f=1MHz VGS=0V 10000 CAPACITANCE : C (pF) SWITCHING TIME : t (ns) Ta=25°C VDD=15V VGS=10V RG=10Ω Pulsed 8 Ta=25 C 7 VDD=15V ID=9A 6 RG=10Ω Pulsed 5 4 3 2 1 0 0 2 4 6 8 10 12 Coss 100 Crss 100 td(on) 10 tr 1 0.01 10 0.01 0.1 1 10 100 0.1 1 10 100 DRAIN-SOURCE VOLTAGE : VDS (V) DRAIN CURRENT : I D (A) TOTAL GATE CHANGE: Qg (nC) Fig.1 Typical Capacitance vs. Drain-Source Voltage Fig.2 Switching Characteristics Fig.3 Dynamic Input Characteristics 10 STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS(on) (mΩ) 100 Ta=25 C pulsed SOURCE CURRENT : Is (A) 100 VGS=0V Pulsed Ta=−25°C 25°C 75°C 125°C DREIN CURRENT : ID(A) 1 ID=9A 10 0.1 Ta=125°C 75°C 25°C −25°C 50 1 0.01 ID=4.5A 0.1 VDS=10V 0.001 Pulsed 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 0 0 2 4 0.01 6 8 10 12 14 16 0 0.5 1.0 1.5 GATE - SOURCE VOLTAGE : VGS(V) GATE-SOURCE VOLTAGE : VGS (V) SOURCE-DRAIN VOLTAGE : VSD(A) Fig.4 Typical Transfer Characteristics Fig.5 Static Drain-Source On-State Resistance vs. Gate-Source Voltage Fig.6 Source-Current vs. Source-Drain Voltage 10000 STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS(on) (mΩ) 10000 STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS(on) (mΩ) VGS=4.5V Pulsed 1000 Ta=125°C 75°C 25°C −25°C STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS(on) (mΩ) VGS=10V Pulsed 10000 VGS=4V Pulsed 1000 Ta=125°C 75°C 25°C −25°C 1000 Ta=125°C 75°C 25°C −25°C 100 100 100 10 10 10 1 0.1 1 DRAIN CURRENT : I D(A) 10 1 0.1 1 0.1 1 DRAIN CURRENT : I D(A) 10 1 DRAIN CURRENT : I D(A) 10 Fig.7 Static Drain-Source On-State Resistance vs. Drain Current (1) Fig.8 Static Drain-Source On-State Resistance vs. Drain Current (2) Fig.9 Static Drain-Source On-State Resistance vs. Drain Current (3) www.rohm.com c ○ 2009 ROHM Co., Ltd. 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