RSH100N03

4V Drive Nch MOSFET RSH100N03 Structure Silicon N-channel MOSFET Features 1) Low on-resistance. 2) Built-in G-S Protection Diode. 3) Small Surface Mount Package (SOP8). Application Power switching, DC / DC converter. Each lead has same dimensions Dimensions (Unit : mm) SOP8 Packaging specifications Package Type RSH100N03 Code Basic ordering unit (pieces) Taping TB 2500 Inner circuit (8) (7) (6) (5) (8) (7) (6) (5) ∗2 ∗1 (1) (2) (3) (4) (1)Source (2)Source (3)Source (4)Gate (5)Drain (6)Drain (7)Drain (8)Drain Absolute maximum ratings (Ta=25C) Parameter Drain-source voltage Gate-source voltage Drain current Source current (Body diode) Total power dissipation Channel temperature Storage temperature ∗1 Pw≤10μs, Duty cycle≤1% ∗2 Mounted on a ceramic board. Continuous Pulsed Continuous Pulsed Symbol VDSS VGSS ID IDP ∗1 IS ISP ∗1 PD ∗2 Tch Tstg Limits 30 20 ±10 ±40 1.6 6.4 2 150 −55 to +150 Unit V V A A A A W °C °C (1) (2) (3) (4) ∗1 ESD PROTECTION DIODE ∗2 BODY DIODE ∗A protection diode is included between the gate and the source terminals to protect the diode against static electricity when the product is in use. Use the protection circuit when the fixed voltages are exceeded. Thermal resistance Parameter Channel to ambient ∗ Mounted on a ceramic board. Symbol Rth (ch-a)∗ Limits 62.5 Unit °C / W www.rohm.com c ○ 2009 ROHM Co., Ltd. All rights reserved. 1/3 2009.12 - Rev.A RSH100N03 Electrical characteristics (Ta=25C) Parameter Symbol Min. − 30 − 1.0 − − − 6.0 − − − − − − − − − − Typ. − − − − 9.5 12.5 13.5 − 1070 320 200 10 16 55 24 14 2.7 5.3 Max. 10 − 1 2.5 13.3 17.5 18.9 − − − − − − − − 20 − − Gate-source leakage IGSS Drain-source breakdown voltage V(BR) DSS Zero gate voltage drain current IDSS Gate threshold voltage VGS (th) Static drain-source on-starte resistance Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Total gate charge Gate-source charge Gate-drain charge ∗Pulsed Data Sheet Unit μA V μA V mΩ S pF pF pF ns ns ns ns nC nC nC Conditions VGS=20V, VDS=0V ID=1mA, VGS=0V VDS=30V, VGS=0V VDS=10V, ID=1mA ID=10A, VGS=10V ID=10A, VGS=4.5V ID=10A, VGS=4V ID=10A, VDS=10V VDS=10V VGS=0V f=1MHz ID=5A, VDD 15V VGS=10V RL=3.0Ω RG =10Ω VDD 15V VGS=5V ID=10A RDS (on) ∗ Yfs Ciss Coss Crss td (on) tr td (off) tf Qg Qgs Qgd ∗ ∗ ∗ ∗ ∗ ∗ ∗ ∗ Body diode characteristics (Source-Drain) (Ta=25C) Parameter Forward voltage ∗Pulsed Symbol VSD ∗ Min. − Typ. − Max. 1.2 Unit V Conditions IS=6.4A, VGS=0V www.rohm.com c ○ 2009 ROHM Co., Ltd. All rights reserved. 2/3 2009.12 - Rev.A RSH100N03 Electrical characteristic curves 10000 Data Sheet CAPACITANCE : C (pF) 1000 tf 1000 Ciss GATE-SOURCE VOLTAGE : VGS (V) SWITCHING TIME : t (ns) Ta=25°C f=1MHz VCE=0V 10000 Ta=25°C VDD=15V VGS=10V RG=10Ω Pulsed 8 Ta=25°C 7 VDD=15V ID=10A 6 RG=10Ω Pulsed 5 4 3 2 1 0 0 2 4 6 8 10 12 14 16 100 td(off) tr 100 Coss Crss 10 td(on) 1 0.01 10 0.01 0.1 1 10 100 0.1 1 10 100 DRAIN-SOURCE VOLTAGE : VDS (V) DRAIN CURRENT : ID (A) TOTAL GATE CHARGE : Qg (nC) Fig.1 Typical Capacitance vs. Drain-Source Voltage Fig.2 Switching Characteristics Fig.3 Dynamic Input Characteristics STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS (on) (mΩ) 100 VDS=10V Pulsed Ta=125°C Ta=75°C Ta=25°C Ta= −25°C 300 250 200 150 100 50 0 Ta=25°C Pulsed 100 Ta=125°C Ta=75°C Ta=25°C Ta= −25°C VGS=0V Pulsed DRAIN CURRENT : ID (A) 10 SOURCE CURRENT : Is (A) 10 1 ID=10A ID=5A 1 0.1 0.01 0.1 0.001 0.0 0.5 1.0 1.5 2.0 2.5 3.0 0 2 4 6 8 10 12 14 16 0.01 0.0 0.5 1.0 1.5 GATE-SOURCE VOLTAGE : VGS (V) GATE-SOURCE VOLTAGE : VGS (V) SOURCE-DRAIN VOLTAGE : VSD (V) Fig.4 Typical Transfer Characteristics Fig.5 Static Drain-Source On-State Resistance vs. Gate-Source Voltage Fig.6 Source Current vs. Source-Drain Voltage STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS (on) (mΩ) STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS (on) (mΩ) VGS=10V Pulsed Ta=125°C Ta=75°C Ta=25°C Ta= −25°C VGS=4.5V Pulsed Ta=125°C Ta=75°C Ta=25°C Ta= −25°C STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS (on) (mΩ) 1000 1000 1000 VGS=4V Pulsed Ta=125°C Ta=25°C Ta= −25°C 100 100 100 Ta=75°C 10 10 10 1 0.01 0.1 1 10 100 1 0.01 0.1 1 10 100 1 1 10 100 DRAIN CURRENT : ID (A) DRAIN CURRENT : ID (A) DRAIN CURRENT : ID (A) Fig.7 Static Drain-Source On-State Resistance vs. Drain Current (Ι) Fig.8 Static Drain-Source On-State Resistance vs. Drain Current (ΙΙ) Fig.9 Static Drain-Source On-State Resistance vs. Drain Current (ΙΙΙ) www.rohm.com c ○ 2009 ROHM Co., Ltd. All rights reserved. 3/3 2009.12 - Rev.A Notice Notes No copying or reproduction of this document, in part or in whole, is permitted without the consent of ROHM Co.,Ltd. The content specified herein is subject to change for improvement without notice. The content specified herein is for the purpose of introducing ROHM's products (hereinafter "Products"). If you wish to use any such Product, please be sure to refer to the specifications, which can be obtained from ROHM upon request. Examples of application circuits, circuit constants and any other information contained herein illustrate the standard usage and operations of the Products. The peripheral conditions must be taken into account when designing circuits for mass production. Great care was taken in ensuring the accuracy of the information specified in this document. However, should you incur any damage arising from any inaccuracy or misprint of such information, ROHM shall bear no responsibility for such damage. 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