RSJ400N06TL

Data Sheet 10V Drive Nch MOSFET RSJ400N06  Structure Silicon N-channel MOSFET  Dimensions (Unit : mm) LPTS 10.1 1.3 13.1 9.0 Features 1) Low on-resistance. 2) High current 3) High power Package 4.5 3.0 1.0 1.24 0.4 0.78 2.7 5.08 (1) (2) 1.2 2.54 (3)  Application Switching  Packaging specifications Package Type Code Basic ordering unit (pieces) RSJ400N06  Inner circuit Taping TL 1000  ∗1 ∗2 (1) Gate (2) Drain (3) Source (1) (2) (3) 1 ESD PROTECTION DIODE 2 BODY DIODE Absolute maximum ratings (Ta = 25°C) Parameter Drain-source voltage Gate-source voltage Drain current Source current (Body Diode) Symbol Limits Unit VDSS 60 20 V V Continuous VGSS ID 40 A Pulsed Continuous IDP IS *1 80 40 A A Pulsed ISP PD *1 80 50 A W Tch Tstg 150 55to150 C C Symbol Rth (ch-c) * Limits 2.5 Unit C / W Power dissipation Channel temperature Range of storage temperature *2 *1 Pw10s, Duty cycle1% *2 Tc=25C  Thermal resistance Parameter Channel to Case * T c=25C www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 1/5 2011.09 - Rev.A Data Sheet 　 RSJ400N06 Electrical characteristics (Ta = 25°C) Parameter Gate-source leakage Symbol Min. Typ. Max. Unit IGSS - - 10 A Drain-source breakdown voltage V(BR)DSS Zero gate voltage drain current Gate threshold voltage Static drain-source on-state resistance Forward transfer admittance Conditions VGS=20V, VDS=0V 60 - - V ID=1mA, V GS=0V IDSS - - 1 A VDS=60V, VGS=0V VGS (th) 1.0 - 3.0 V VDS=10V, ID=1mA RDS (on)* - 11 16 l Yfs l* 14 - - S ID=20A, VDS=10V m ID=40A, VGS=10V Input capacitance Ciss - 2400 - pF VDS=10V Output capacitance Coss - 490 - pF VGS=0V Reverse transfer capacitance Crss - 250 - pF f=1MHz Turn-on delay time td(on) * - 20 - ns ID=20A, VDD 30V tr * - 60 - ns VGS=10V td(off) * - 90 - ns RL=1.5 * - 140 - ns RG=10 Qg * - 52 - nC VDD 30V Gate-source charge Qgs * Gate-drain charge Qgd * - 8 15 - nC nC ID=40A, VGS=10V Rise time Turn-off delay time Fall time tf Total gate charge *Pulsed Body diode characteristics (Source-Drain) (Ta = 25C) Parameter Forward Voltage Symbol VSD * Min. Typ. Max. Unit - - 1.2 V Conditions Is=40A, VGS=0V *Pulsed www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 2/5 2011.09 - Rev.A Data Sheet 　 RSJ400N06 Electrical characteristic curves (Ta=25C) Fig.2 Static Drain-Source On-State Resistance vs. Drain Current Fig.1 Static Drain-Source On-State Resistance vs. Drain Current 100 Ta=25°C VGS=10V pulsed Static Drain-Source On-State Resistance RDS(on) [mΩ] Static Drain-Source On-State Resistance RDS(on) [mΩ] 100 10 1 0.01 0.1 1 10 VGS=10V pulsed 10 1 0.01 100 Ta=125°C Ta=75°C Ta=25°C Ta=-25°C 0.1 Drain Current : ID [A] Fig.3 Static Drain-Source On-State Resistance vs. Drain Current VGS=4V pulsed Ta=125°C Ta=75°C Ta=25°C Ta=-25°C Static Drain-Source On-State Resistance RDS(on) [mΩ] Static Drain-Source On-State Resistance RDS(on) [mΩ] 100 100 VGS=4.5V pulsed 10 0.1 1 10 Ta=125°C Ta=75°C Ta=25°C Ta=-25°C 10 1 0.01 100 0.1 Drain Current : ID [A] 1 10 100 Drain Current : ID [A] Fig.5 Forward Transfer Admittance vs. Drain Current Fig.6 Typical Transfer Characteristics 100 100 VDS=10V pulsed VDS=10V pulsed 10 10 1 Drain Currnt : ID [A] Forward Transfer Admittance Yfs [S] 10 Fig.4 Static Drain-Source On-State Resistance vs. Drain Current 100 1 0.01 1 Drain Current : ID [A] Ta=125°C Ta=75°C Ta=25°C Ta=-25°C 1 Ta=125°C Ta=75°C Ta=25°C Ta=-25°C 0.1 0.01 0.001 0.1 0.0001 0.01 0.01 0.1 1 10 0.00001 100 www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 Gate-Source Voltage : VGS [V] Drain Current : ID [A] 3/5 2011.09 - Rev.A Data Sheet 　 RSJ400N06 Fig.8 Static Drain-Source On-State Resistance vs. Gate-Source Voltage Fig.7 Source Current vs. Source-Drain Voltage 100 50 Static Drain-Source On-State Resistance RDS(on) [mΩ] VGS=0V pulsed Source Current : Is [A] 10 Ta=125°C Ta=75°C Ta=25°C Ta=-25°C 1 0.1 0.01 0.001 0.0001 0.0 0.5 1.0 Ta=25°C pulsed 40 ID=20A 30 ID=40A 20 10 0 1.5 0 2 4 6 Source-Drain Voltage : VSD [V] Fig.9 Switching Characteristics VDD≒30V VGS=10V RG=10Ω Ta=25°C Pulsed Gate-Source Voltage : VGS [V] Switching Time : t [ns] td(off) 100 td(on) 10 16 18 20 tr 0.01 0.1 55 60 6 4 2 1 10 0 100 0 5 10 15 Drain Current : ID [A] 20 25 30 35 40 45 50 Total Gate Charge : Qg [nC] Fig.11 Typical Capacitance vs. Drain-Source Voltage Fig.12 Normalized Transient Thermal Resistance v.s. Pulse Width 100000 10 Ta=25°C f=1MHz VGS=0V Normalized Transient Thermal Resistance : r（t） Capacitance : C [pF] 14 Ta=25°C VDD=30V ID=40A Pulsed 8 tf Ciss 1000 Coss 100 Crss 10 1 12 10 1000 10000 10 Fig.10 Dynamic Input Characteristics 10000 1 8 Gate-Source Voltage : VGS [V] 0.01 0.1 1 10 1 0.1 0.01 Rth(ch-c)=2.5°C/W Rth(ch-c)(t)=r(t)×Rth(ch-c) 0.001 0.0001 100 0.001 0.01 0.1 1 10 100 1000 Pulse width : Pw (s) Drain-Source Voltage : VDS [V] www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. Tc=25°C Single Pulse 4/5 2011.09 - Rev.A Data Sheet 　 RSJ400N06  Measurement circuits Pulse width VGS ID VDS 90% 50% 10% VGS VDS RL 50% 10% D.U.T. VDD RG 10% 90% td(on) ton Fig.1-1 Switching Time Measurement Circuit 90% td(off) tr tf toff Fig.1-2 Switching Waveforms VG VGS ID VDS RL IG(Const.) D.U.T. Qg VGS Qgs Qgd VDD Charge Fig.2-1 Gate Charge Measurement Circuit www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. Fig.2-2 Gate Charge Waveform 5/5 2011.09 - Rev.A Notice Notes Thank you for your accessing to ROHM product informations. More detail product informations and catalogs are available, please contact us. ROHM Customer Support System http://www.rohm.com/contact/ www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. R1120A