RSJ450N04

Data Sheet 10V Drive Nch MOSFET RSJ450N04  Structure Silicon N-channel MOSFET  Dimensions (Unit : mm) LPTS 10.1 4.5 1.3 Features 1) Low on-resistance. 2) High current 3) High power Package 13.1 9.0 3.0 1.0 1.24 0.78 (3) 5.08 (1) (2) 2.7  Application Switching  Packaging specifications Package Type Code Basic ordering unit (pieces) RSJ450N04 Taping TL 1000 ○  Inner circuit ∗1 ∗2 (1) Gate (2) Drain (3) Source (1) (2) 1 ESD PROTECTION DIODE 2 BODY DIODE Absolute maximum ratings (Ta = 25°C) Parameter Drain-source voltage Gate-source voltage Drain current Source current (Body Diode) Power dissipation Channel temperature Range of storage temperature *1 Pw10s, Duty cycle1% *2 Tc=25C Symbol VDSS VGSS ID IDP IS ISP PD Tch Tstg *1 Limits 40 20 45 90 40 90 50 150 55to150 Unit V V A A A A W C C Continuous Pulsed Continuous Pulsed *1 *2  Thermal resistance Parameter Channel to Case * T c=25C Symbol Rth (ch-c) * Limits 2.5 Unit C / W www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 1/5 2011.09 - Rev.A 1.2 2.54 0.4 (3) RSJ450N04 Electrical characteristics (Ta = 25°C) Parameter Gate-source leakage Zero gate voltage drain current Gate threshold voltage Static drain-source on-state resistance Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Total gate charge Gate-source charge Gate-drain charge *Pulsed 　 Symbol IGSS IDSS VGS (th) * RDS (on) l Yfs l* Ciss Coss Crss td(on) * tr * td(off) * tf * Qg * Qgs * Qgd * Min. 40 1.2 10 Typ. 9.5 2400 380 170 25 225 90 390 43 12 6 Max. 10 1 3.0 13.5 Unit A V A V Conditions VGS=20V, VDS=0V ID=1mA, V GS=0V VDS=40V, VGS=0V VDS=10V, ID=1mA Data Sheet Drain-source breakdown voltage V(BR)DSS m  ID=25A, VGS=10V S pF pF pF ns ns ns ns nC nC nC ID=25A, VDS=10V VDS=25V VGS=0V f=1MHz ID=25A, VDD 25V VGS=10V RL=1.0 RG=10 VDD 25V ID=45A, VGS=10V Body diode characteristics (Source-Drain) (Ta = 25C) Parameter Forward Voltage *Pulsed Symbol VSD * Min. - Typ. - Max. 1.2 Unit V Conditions Is=25A, VGS=0V www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 2/5 2011.09 - Rev.A RSJ450N04 Electrical characteristic curves (Ta=25C) Fig.1 Typical Output Characteristics (Ⅰ) 20 18 16 14 Drain Current : ID [A] 12 10 8 6 4 2 0 0 0.2 0.4 0.6 0.8 1 Drain-Source Voltage : VDS [V] VGS=2.8V VGS=3.0V VGS=10.0V VGS=4.5V VGS=4.0V Ta=25°C Pulsed 　 Data Sheet Fig.2 Typical Output Characteristics (Ⅱ) 20 VGS=10.0V 18 16 14 Drain Current : ID [A] 12 10 8 6 4 2 0 0 2 4 6 8 10 Drain-Source Voltage : VDS [V] Ta=25°C Pulsed VGS=2.8V VGS=4.0V VGS=3.0V VGS=3.2V Fig.3 Static Drain-Source On-State Resistance vs. Drain Current 100 VGS=10V pulsed Static Drain-Source On-State Resistance RDS(on) [mW ] Ta=125°C Ta=75°C Ta=25°C Ta=-25°C 100 Fig.4 Forward Transfer Admittance vs. Drain Current VDS=10V pulsed Forward Transfer Admittance Yfs [S] 10 10 1 Ta=125°C Ta=75°C Ta=25°C Ta=-25°C 0.1 1 0.01 0.1 1 Drain Current : ID [A] 10 100 0.01 0.01 0.1 1 Drain Current : ID [A] 10 100 Fig.5 Typical Transfer Characteristics 100 VDS=10V pulsed 10 Ta=125°C Ta=75°C Ta=25°C Ta=-25°C 10 Source Current : Is [A] 100 Fig.6 Source Current vs. Source-Drain Voltage VGS=0V pulsed Drain Currnt : ID [A] 1 1 0.1 Ta=125°C Ta=75°C Ta=25°C Ta=-25°C 0.1 0.01 0.001 1.0 1.5 2.0 2.5 3.0 3.5 4.0 Gate-Source Voltage : VGS [V] 0.01 0.0 0.5 1.0 1.5 Source-Drain Voltage : VSD [V] www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 3/5 2011.09 - Rev.A RSJ450N04 　 Data Sheet Fig.7 Static Drain-Source On-State Resistance vs. Gate-Source Voltage 50 Ta=25°C Pulsed Static Drain-Source On-State Resistance RDS(on) [mΩ] 40 1000 Switching Time : t [ns] 10000 Fig.8 Switching Characteristics VDD≒25V VGS=10V RG=10Ω Ta=25°C Pulsed td(off) tf 30 ID=45.0A ID=22.5A 20 100 td(on) 10 10 tr 0 0 2 4 6 8 10 12 14 16 18 20 Gate-Source Voltage : VGS [V] 1 0.01 0.1 1 Drain Current : ID [A] 10 100 Fig.9 Dynamic Input Characteristics 12 Ta=25°C VDD=25V ID=45A Pulsed 100000 Fig.10 Typical Capacitance vs. Drain-Source Voltage 10 Gate-Source Voltage : VGS [V] 10000 Ta=25°C f=1MHz VGS=0V Ciss Capacitance : C [pF] 8 1000 Coss 6 100 Crss 4 10 2 0 0 5 10 15 20 25 30 35 40 45 50 Total Gate Charge : Qg [nC] 1 0.01 0.1 1 10 100 Drain-Source Voltage : VDS [V] Fig.11 Maximum Safe Operating Area 1000 Normalized Transient Thermal Resistance : r（t） Operation in this area is limited by RDS(on) (VGS = 10V) 100 Drain Current : ID [ A ] Tc=25°C Fig.12 Normalized Transient Thermal Resistance v.s. Pulse Width 10 Tc=25°C Single Pulse 1 PW = 100μs 10 PW = 1ms 1 PW = 10ms 0.1 0.01 0.1 DC Operation Rth(ch-c)=2.5°C/W Rth(ch-c)(t)=r(t)×Rth(ch-c) 0.001 0.0001 0.001 0.01 0.1 1 10 100 1000 0.01 0.1 1 10 100 Drain-Source Voltage : VDS [ V ] Pulse width : Pw (s) www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 4/5 2011.09 - Rev.A RSJ450N04  Measurement circuits 　 Data Sheet Pulse width VGS ID RL D.U.T. RG VDD VDS VGS VDS 50% 10% 10% 90% td(on) ton tr 90% 50% 10% 90% td(off) toff tf Fig.1-1 Switching Time Measurement Circuit Fig.1-2 Switching Waveforms VG VGS ID RL IG(Const.) D.U.T. VDD VDS Qg VGS Qgs Qgd Charge Fig.2-1 Gate Charge Measurement Circuit Fig.2-2 Gate Charge Waveform www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 5/5 2011.09 - Rev.A Notice Notes Thank you for your accessing to ROHM product informations. More detail product informations and catalogs are available, please contact us. 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