Data Sheet
4V Drive Nch MOSFET
RSJ550N10
Structure
Silicon N-channel MOSFET
Dimensions (Unit : mm)
LPTS
TO-263(D2PAK)
4.5
1.3
13.1
9.0
Features
1) Low on-resistance.
2) High Power Package.
3) 4V drive.
10.1
2.54
0.4
0.78
2.7
5.08
(1)
(2)
1.2
3.0
1.0
1.24
(3)
Application
Switching
Packaging specifications
Package
Type
Code
Basic ordering unit (pieces)
RSJ550N10
Inner circuit
Taping
TL
1000
∗1
∗2
(1)
(1) Gate
(2) Drain
(3) Source
Absolute maximum ratings (Ta = 25C)
Symbol
Parameter
Limits
Unit
100
20
55
V
V
A
110
55
A
A
110
100
A
W
Tch
Tstg
150
55 to 150
C
C
Symbol
Rth (ch-c)*
Limits
1.25
Unit
C / W
Drain-source voltage
VDSS
Gate-source voltage
VGSS
ID *3
Drain current
Source current
(Body Diode)
Continuous
*1
Pulsed
Continuous
IDP
IS
*3
Pulsed
ISP
*1
PD
*2
Power dissipation
Channel temperature
Range of storage temperature
(2)
(3)
1 ESD PROTECTION DIODE
2 BODY DIODE
*1 PW 10s, Duty cycle1%
*2 TC=25°C
*3 Please use within the range of SOA.
Thermal resistance
Parameter
Channel to Case
* T C=25°C
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© 2011 ROHM Co., Ltd. All rights reserved.
1/6
2011.06 - Rev.A
Data Sheet
RSJ550N10
Electrical characteristics (Ta = 25C)
Parameter
Gate-source leakage
Symbol
Min.
Typ.
Max.
Unit
IGSS
-
-
10
A
Drain-source breakdown voltage V(BR)DSS
Zero gate voltage drain current
Gate threshold voltage
Conditions
VGS=20V, VDS=0V
100
-
-
V
ID=1mA, V GS=0V
IDSS
-
-
1
A
VDS=100V, VGS=0V
VGS (th)
1
-
2.5
V
-
12
16.8
-
13.5
18.9
VDS=10V, ID=1mA
ID=27.5A, VGS=10V
Static drain-source on-state
resistance
*
RDS (on)
Forward transfer admittance
l Yfs l*
30
-
-
S
VDS=10V, ID=27.5A
Input capacitance
Ciss
-
6150
-
pF
VDS=25V
Output capacitance
Coss
-
460
-
pF
VGS=0V
Reverse transfer capacitance
Crss
-
320
-
pF
f=1MHz
Turn-on delay time
td(on)*
-
32
-
ns
VDD 50V, I D=27.5A
tr *
-
105
-
ns
VGS=10V
td(off)*
-
375
-
ns
RL=1.82
tf *
-
360
-
ns
RG=10
Total gate charge
Qg *
-
143
-
nC
VDD 50V, I D=27.5A
Gate-source charge
Qgs *
Qgd *
-
16
34
-
nC
nC
VGS=10V
Gate-drain charge
Min.
Typ.
Max.
-
-
1.5
Rise time
Turn-off delay time
Fall time
m
ID=27.5A, VGS=4V
*Pulsed
Body diode characteristics (Source-Drain)
Parameter
Forward Voltage
Symbol
VSD *
Unit
Conditions
V
Is=55A, VGS=0V
*Pulsed
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© 2011 ROHM Co., Ltd. All rights reserved.
2/6
2011.06 - Rev.A
Data Sheet
RSJ550N10
Electrical characteristic curves (Ta=25C)
Fig.1 Typical Output Characteristics (Ⅰ)
Fig.2 Typical Output Characteristics (Ⅱ)
50
50
Ta=25°C
pulsed
VGS=4.5V
40
40
VGS=4.0V
VGS=3.0V
30
VGS=3.0V
VGS=2.8V
Drain Current : ID [A]
Drain Current : ID [A]
VGS=10.0V
VGS=4.5V
VGS=4.0V
VGS=10.0V
VGS=2.8V
20
VGS=2.5V
10
30
VGS=2.5V
20
10
Ta=25°C
pulsed
0
0
0
0.2
0.4
0.6
0.8
1
0
2
4
10
100
100
VGS=10V
pulsed
Static Drain-Source On-State Resistance
RDS(on) [mW]
Ta=25°C
pulsed
Static Drain-Source On-State Resistance
RDS(on) [mW]
8
Fig.4 Static Drain-Source On-State Resistance vs. Drain Current
Fig.3 Static Drain-Source On-State Resistance vs. Drain Current
VGS=4.0V
VGS=10V
10
1
0.01
0.1
1
10
100
10
1
0.01
1000
Ta=125°C
Ta=75°C
Ta=25°C
Ta=-25°C
0.1
1
10
100
Drain Current : ID [A]
Drain Current : ID [A]
Fig.5 Static Drain-Source On-State Resistance vs. Drain Current
Fig.6 Typical Transfer Characteristics
100
100
VGS=4V
pulsed
VDS=10V
pulsed
Ta=125°C
Ta=75°C
Ta=25°C
Ta=-25°C
10
Drain Currnt : ID [A]
Static Drain-Source On-State Resistance
RDS(on) [mW]
6
Drain-Source Voltage : VDS [V]
Drain-Source Voltage : VDS [V]
10
Ta=125°C
Ta=75°C
Ta=25°C
Ta=-25°C
1
0.1
0.01
1
0.01
0.001
0.1
1
10
100
0.0
Drain Current : ID [A]
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© 2011 ROHM Co., Ltd. All rights reserved.
0.5
1.0
1.5
2.0
2.5
3.0
3.5
Gate-Source Voltage : VGS [V]
3/6
2011.06 - Rev.A
Data Sheet
RSJ550N10
Fig.7 Source Current vs. Source-Drain Voltage
Fig.8 Static Drain-Source On-State Resistance vs. Gate-Source Voltage
50
100
Ta=25°C
pulsed
Source Current : Is [A]
10
Static Drain-Source On-State Resistance
RDS(on) [mW]
VGS=0V
pulsed
Ta=125°C
Ta=75°C
Ta=25°C
Ta=-25°C
1
0.1
40
ID=27.5A
ID=50A
30
20
10
0
0.01
0.0
0.5
1.0
1.5
0
2.0
4
8
10
Source-Drain Voltage : VSD [V]
Fig.9 Switching Characteristics
Fig.10 Dynamic Input Characteristics
10
tf
8
Gate-Source Voltage : VGS [V]
td(off)
1000
100
tr
td(on)
VDD≒50V
VGS=10V
RG=10W
Ta=25°C
Pulsed
10
Ta=25°C
VDD=50V
ID=27.5A
Pulsed
6
4
2
1
0
0.01
0.1
1
10
100
0 10 20 30 40 50 60 70 80 90 100110120130140150
Drain Current : ID [A]
Total Gate Charge : Qg [nC]
Fig.11 Typical Capacitance vs. Drain-Source Voltage
Fig.12 Normalized Transient Thermal Resistance v.s. Pulse Width
100000
10
Normalized Transient Thermal Resistance : r(t)
Ta=25°C
f=1MHz
VGS=0V
10000
Capacitance : C [pF]
6
Gate-Source Voltage : VGS [V]
10000
Switching Time : t [ns]
2
Ciss
1000
Crss
100
Coss
10
Ta=25°C
Single Pulse
1
0.1
0.01
Mounted on epoxy board.
(25mm × 27mm × 0.8mm)
Rth(ch-a)=71.4°C/W
Rth(ch-a)(t)=r(t)×Rth(ch-a)
0.001
0.0001
0.01
0.1
1
10
100
0.0001
1000
0.01
0.1
1
10
100
1000
Pulse width : Pw (s)
Drain-Source Voltage : VDS [V]
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© 2011 ROHM Co., Ltd. All rights reserved.
0.001
4/6
2011.06 - Rev.A
RSJ550N10
Data Sheet
Fig.13 Maximum Safe Operating Area
1000
Operation in this area is limited by RDS(on)
(VGS = 10V)
Drain Current : ID [ A ]
100
10
PW = 300ms
PW = 1ms
1
PW = 10ms
0.1
PW = 1s
Ta=25°C
Single Pulse
Mounted on epoxy board.
(25mm × 27mm × 0.8mm)
0.01
0.1
1
10
100
1000
Drain-Source Voltage : VDS [ V ]
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© 2011 ROHM Co., Ltd. All rights reserved.
5/6
2011.06 - Rev.A
Data Sheet
RSJ550N10
Measurement circuits
Pulse width
VGS
ID
VDS
90%
50%
10%
VGS
VDS
RL
50%
10%
D.U.T.
VDD
RG
10%
90%
td(on)
ton
Fig.1-1 Switching Time Measurement Circuit
90%
td(off)
tr
tf
toff
Fig.1-2 Switching Waveforms
VG
VGS
ID
VDS
Qg
RL
IG(Const.)
VGS
D.U.T.
Qgs
Qgd
VDD
Charge
Fig.2-1 Gate Charge Measurement Circuit
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© 2011 ROHM Co., Ltd. All rights reserved.
Fig.2-2 Gate Charge Waveform
6/6
2011.06 - Rev.A
Notice
Notes
Thank you for your accessing to ROHM product informations.
More detail product informations and catalogs are available, please contact us.
ROHM Customer Support System
http://www.rohm.com/contact/
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© 2011 ROHM Co., Ltd. All rights reserved.
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