RSJ550N10TL

Data Sheet 4V Drive Nch MOSFET RSJ550N10  Structure Silicon N-channel MOSFET  Dimensions (Unit : mm) LPTS TO-263(D2PAK) 4.5 1.3 13.1 9.0 Features 1) Low on-resistance. 2) High Power Package. 3) 4V drive. 10.1 2.54 0.4 0.78 2.7 5.08 (1) (2) 1.2 3.0 1.0 1.24 (3)  Application Switching  Packaging specifications Package Type Code Basic ordering unit (pieces) RSJ550N10  Inner circuit Taping TL 1000  ∗1 ∗2 (1) (1) Gate (2) Drain (3) Source  Absolute maximum ratings (Ta = 25C) Symbol Parameter Limits Unit 100 20 55 V V A 110 55 A A 110 100 A W Tch Tstg 150 55 to 150 C C Symbol Rth (ch-c)* Limits 1.25 Unit C / W Drain-source voltage VDSS Gate-source voltage VGSS ID *3 Drain current Source current (Body Diode) Continuous *1 Pulsed Continuous IDP IS *3 Pulsed ISP *1 PD *2 Power dissipation Channel temperature Range of storage temperature (2) (3) 1 ESD PROTECTION DIODE 2 BODY DIODE *1 PW 10s, Duty cycle1% *2 TC=25°C *3 Please use within the range of SOA.  Thermal resistance Parameter Channel to Case * T C=25°C www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 1/6 2011.06 - Rev.A Data Sheet 　 RSJ550N10  Electrical characteristics (Ta = 25C) Parameter Gate-source leakage Symbol Min. Typ. Max. Unit IGSS - - 10 A Drain-source breakdown voltage V(BR)DSS Zero gate voltage drain current Gate threshold voltage Conditions VGS=20V, VDS=0V 100 - - V ID=1mA, V GS=0V IDSS - - 1 A VDS=100V, VGS=0V VGS (th) 1 - 2.5 V - 12 16.8 - 13.5 18.9 VDS=10V, ID=1mA ID=27.5A, VGS=10V Static drain-source on-state resistance * RDS (on) Forward transfer admittance l Yfs l* 30 - - S VDS=10V, ID=27.5A Input capacitance Ciss - 6150 - pF VDS=25V Output capacitance Coss - 460 - pF VGS=0V Reverse transfer capacitance Crss - 320 - pF f=1MHz Turn-on delay time td(on)* - 32 - ns VDD 50V, I D=27.5A tr * - 105 - ns VGS=10V td(off)* - 375 - ns RL=1.82 tf * - 360 - ns RG=10 Total gate charge Qg * - 143 - nC VDD 50V, I D=27.5A Gate-source charge Qgs * Qgd * - 16 34 - nC nC VGS=10V Gate-drain charge Min. Typ. Max. - - 1.5 Rise time Turn-off delay time Fall time m ID=27.5A, VGS=4V *Pulsed Body diode characteristics (Source-Drain) Parameter Forward Voltage Symbol VSD * Unit Conditions V Is=55A, VGS=0V *Pulsed www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 2/6 2011.06 - Rev.A Data Sheet 　 RSJ550N10 Electrical characteristic curves (Ta=25C) Fig.1 Typical Output Characteristics (Ⅰ) Fig.2 Typical Output Characteristics (Ⅱ) 50 50 Ta=25°C pulsed VGS=4.5V 40 40 VGS=4.0V VGS=3.0V 30 VGS=3.0V VGS=2.8V Drain Current : ID [A] Drain Current : ID [A] VGS=10.0V VGS=4.5V VGS=4.0V VGS=10.0V VGS=2.8V 20 VGS=2.5V 10 30 VGS=2.5V 20 10 Ta=25°C pulsed 0 0 0 0.2 0.4 0.6 0.8 1 0 2 4 10 100 100 VGS=10V pulsed Static Drain-Source On-State Resistance RDS(on) [mW] Ta=25°C pulsed Static Drain-Source On-State Resistance RDS(on) [mW] 8 Fig.4 Static Drain-Source On-State Resistance vs. Drain Current Fig.3 Static Drain-Source On-State Resistance vs. Drain Current VGS=4.0V VGS=10V 10 1 0.01 0.1 1 10 100 10 1 0.01 1000 Ta=125°C Ta=75°C Ta=25°C Ta=-25°C 0.1 1 10 100 Drain Current : ID [A] Drain Current : ID [A] Fig.5 Static Drain-Source On-State Resistance vs. Drain Current Fig.6 Typical Transfer Characteristics 100 100 VGS=4V pulsed VDS=10V pulsed Ta=125°C Ta=75°C Ta=25°C Ta=-25°C 10 Drain Currnt : ID [A] Static Drain-Source On-State Resistance RDS(on) [mW] 6 Drain-Source Voltage : VDS [V] Drain-Source Voltage : VDS [V] 10 Ta=125°C Ta=75°C Ta=25°C Ta=-25°C 1 0.1 0.01 1 0.01 0.001 0.1 1 10 100 0.0 Drain Current : ID [A] www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 0.5 1.0 1.5 2.0 2.5 3.0 3.5 Gate-Source Voltage : VGS [V] 3/6 2011.06 - Rev.A Data Sheet 　 RSJ550N10 Fig.7 Source Current vs. Source-Drain Voltage Fig.8 Static Drain-Source On-State Resistance vs. Gate-Source Voltage 50 100 Ta=25°C pulsed Source Current : Is [A] 10 Static Drain-Source On-State Resistance RDS(on) [mW] VGS=0V pulsed Ta=125°C Ta=75°C Ta=25°C Ta=-25°C 1 0.1 40 ID=27.5A ID=50A 30 20 10 0 0.01 0.0 0.5 1.0 1.5 0 2.0 4 8 10 Source-Drain Voltage : VSD [V] Fig.9 Switching Characteristics Fig.10 Dynamic Input Characteristics 10 tf 8 Gate-Source Voltage : VGS [V] td(off) 1000 100 tr td(on) VDD≒50V VGS=10V RG=10W Ta=25°C Pulsed 10 Ta=25°C VDD=50V ID=27.5A Pulsed 6 4 2 1 0 0.01 0.1 1 10 100 0 10 20 30 40 50 60 70 80 90 100110120130140150 Drain Current : ID [A] Total Gate Charge : Qg [nC] Fig.11 Typical Capacitance vs. Drain-Source Voltage Fig.12 Normalized Transient Thermal Resistance v.s. Pulse Width 100000 10 Normalized Transient Thermal Resistance : r（t） Ta=25°C f=1MHz VGS=0V 10000 Capacitance : C [pF] 6 Gate-Source Voltage : VGS [V] 10000 Switching Time : t [ns] 2 Ciss 1000 Crss 100 Coss 10 Ta=25°C Single Pulse 1 0.1 0.01 Mounted on epoxy board. (25mm × 27mm × 0.8mm) Rth(ch-a)=71.4°C/W Rth(ch-a)(t)=r(t)×Rth(ch-a) 0.001 0.0001 0.01 0.1 1 10 100 0.0001 1000 0.01 0.1 1 10 100 1000 Pulse width : Pw (s) Drain-Source Voltage : VDS [V] www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 0.001 4/6 2011.06 - Rev.A 　 RSJ550N10 Data Sheet Fig.13 Maximum Safe Operating Area 1000 Operation in this area is limited by RDS(on) (VGS = 10V) Drain Current : ID [ A ] 100 10 PW = 300ms PW = 1ms 1 PW = 10ms 0.1 PW = 1s Ta=25°C Single Pulse Mounted on epoxy board. (25mm × 27mm × 0.8mm) 0.01 0.1 1 10 100 1000 Drain-Source Voltage : VDS [ V ] www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 5/6 2011.06 - Rev.A Data Sheet 　 RSJ550N10  Measurement circuits Pulse width VGS ID VDS 90% 50% 10% VGS VDS RL 50% 10% D.U.T. VDD RG 10% 90% td(on) ton Fig.1-1 Switching Time Measurement Circuit 90% td(off) tr tf toff Fig.1-2　Switching Waveforms VG VGS ID VDS Qg RL IG(Const.) VGS D.U.T. Qgs Qgd VDD Charge Fig.2-1 Gate Charge Measurement Circuit www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. Fig.2-2 Gate Charge Waveform 6/6 2011.06 - Rev.A Notice Notes Thank you for your accessing to ROHM product informations. More detail product informations and catalogs are available, please contact us. ROHM Customer Support System http://www.rohm.com/contact/ www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. R1120A