RSJ650N10

Data Sheet 4V Drive Nch MOSFET RSJ650N10  Structure Silicon N-channel MOSFET  Dimensions (Unit : mm) LPTS 10.1 4.5 1.3 Features 1) Low on-resistance. 2) High power package. 3) 4V drive. 13.1 9.0 3.0 1.0 1.24 0.78 (3) 5.08 (1) (2) 2.7  Application Switching  Packaging specifications Package Code Basic ordering unit (pieces) RSJ650N10 Type Taping TL 1000   Inner circuit ∗1 (1) Gate (2) Drain (3) Source (1) (2) 1.2 2.54 0.4 ∗2 (3) ∗1 ESD PROTECTION DIODE ∗2 BODY DIODE  Absolute maximum ratings (Ta = 25C) Symbol Parameter Drain-source voltage Gate-source voltage Drain current Source current (Body Diode) Power dissipation Channel temperature Range of storage temperature *1 PW 10s, Duty cycle1% *2 TC=25°C *3 Please use within the range of SOA. Limits 100 20 65 130 65 130 100 150 55 to 150 Unit V V A A A A W C C VDSS Continuous Pulsed Continuous Pulsed VGSS ID *3 IDP *1 IS *3 ISP PD Tch Tstg *1 *2  Thermal resistance Parameter Channel to Case * T C=25°C Symbol Rth (ch-c)* Limits 1.25 Unit C / W www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 1/6 2011.06 - Rev.A RSJ650N10  Electrical characteristics (Ta = 25C) Parameter Gate-source leakage Zero gate voltage drain current Gate threshold voltage Static drain-source on-state resistance Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Total gate charge Gate-source charge Gate-drain charge *Pulsed 　 Symbol IGSS IDSS VGS (th) * RDS (on) l Yfs l* Ciss Coss Crss td(on)* tr * td(off)* tf * Qg * Qgs * Qgd * Min. 100 1 45 Typ. 6.5 7 10780 785 560 45 170 640 480 260 24 60 Max. 10 1 2.5 9.1 9.8 Unit A V A V m S pF pF pF ns ns ns ns nC nC nC Conditions VGS=20V, VDS=0V ID=1mA, V GS=0V VDS=100V, VGS=0V VDS=10V, ID=1mA ID=32.5A, VGS=10V ID=32.5A, VGS=4V VDS=10V, ID=32.5A VDS=25V VGS=0V f=1MHz VDD 50V, I D=32.5A VGS=10V RL=1.54 RG=10 VDD 50V, I D=32.5A VGS=10V Data Sheet Drain-source breakdown voltage V(BR)DSS Body diode characteristics (Source-Drain) Parameter Forward Voltage *Pulsed Symbol VSD * Min. - Typ. - Max. 1.5 Unit V Conditions Is=65A, VGS=0V www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 2/6 2011.06 - Rev.A RSJ650N10 Electrical characteristic curves (Ta=25C) Fig.1 Typical Output Characteristics (Ⅰ) 50 VGS=10.0V VGS=4.5V 40 VGS=4.0V VGS=2.8V 　 Data Sheet Fig.2 Typical Output Characteristics (Ⅱ) 50 VGS=3.0V 40 VGS=3.0V Drain Current : ID [A] VGS=2.8V 30 VGS=2.5V VGS=10.0V VGS=4.5V VGS=4.0V Drain Current : ID [A] 30 VGS=2.5V 20 20 10 Ta=25°C pulsed 0 0 0.2 0.4 0.6 0.8 1 10 Ta=25°C pulsed 0 0 2 4 6 8 10 Drain-Source Voltage : VDS [V] Drain-Source Voltage : VDS [V] Fig.3 Static Drain-Source On-State Resistance vs. Drain Current 100 Ta=25°C pulsed Static Drain-Source On-State Resistance RDS(on) [mW ] Static Drain-Source On-State Resistance RDS(on) [mW ] Fig.4 Static Drain-Source On-State Resistance vs. Drain Current 100 VGS=10V pulsed Ta=125°C Ta=75°C Ta=25°C Ta=-25°C 10 VGS=4.0V VGS=10V 10 1 0.01 0.1 1 Drain Current : ID [A] 10 100 1 0.01 0.1 1 Drain Current : ID [A] 10 100 Fig.5 Static Drain-Source On-State Resistance vs. Drain Current 100 VGS=4V pulsed Ta=125°C Ta=75°C Ta=25°C Ta=-25°C 1000 Fig.6 Forward Transfer Admittance vs. Drain Current VDS=10V pulsed 100 Forward Transfer Admittance Yfs [S] Static Drain-Source On-State Resistance RDS(on) [mW ] 10 10 1 Ta=125°C Ta=75°C Ta=25°C Ta=-25°C 0.1 1 0.01 0.1 1 Drain Current : ID [A] 10 100 0.01 0.01 0.1 1 Drain Current : ID [A] 10 100 www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 3/6 2011.06 - Rev.A RSJ650N10 　 Data Sheet Fig.7 Typical Transfer Characteristics 100 VDS=10V pulsed 10 10 Source Current : Is [A] Drain Currnt : ID [A] Ta=125°C Ta=75°C Ta=25°C Ta=-25°C 100 Fig.8 Source Current vs. Source-Drain Voltage VGS=0V pulsed 1 1 Ta=125°C Ta=75°C Ta=25°C Ta=-25°C 0.1 0.1 0.01 0.001 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 Gate-Source Voltage : VGS [V] 0.01 0.0 0.5 1.0 1.5 2.0 Source-Drain Voltage : VSD [V] Fig.9 Static Drain-Source On-State Resistance vs. Gate-Source Voltage 20 Ta=25°C pulsed Static Drain-Source On-State Resistance RDS(on) [mW ] 10000 15 ID=50A ID=32.5A Switching Time : t [ns] tf 100000 Fig.10 Switching Characteristics VDD≒50V VGS=10V RG=10W Ta=25°C Pulsed td(off) 1000 10 100 5 10 td(on) tr 0 0 2 4 6 8 10 1 0.01 0.1 1 Drain Current : ID [A] 10 100 Gate-Source Voltage : VGS [V] Fig.11 Dynamic Input Characteristics 10 Ta=25°C VDD=50V ID=32.5A Pulsed Capacitance : C [pF] 100000 Fig.12 Typical Capacitance vs. Drain-Source Voltage 8 Gate-Source Voltage : VGS [V] Ciss 10000 6 1000 Coss Crss 100 4 2 Ta=25°C f=1MHz VGS=0V 10 0 50 100 150 200 250 300 0.01 0.1 1 10 100 1000 0 Total Gate Charge : Qg [nC] Drain-Source Voltage : VDS [V] www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 4/6 2011.06 - Rev.A RSJ650N10 　 Data Sheet Fig.13 Normalized Transient Thermal Resistance v.s. Pulse Width 10 Fig.14 Maximum Safe Operating Area 1000 Normalized Transient Thermal Resistance : r (t) Ta=25°C Single Pulse 1 Operation in this area is limited by RDS(on) (VGS = 10V) 100 Drain Current : ID [ A ] 0.1 10 PW = 300us PW = 1ms PW = 10ms PW = 1s 0.1 Ta=25°C Single Pulse Mounted on epoxy board. (25mm × 27mm × 0.8mm) 0.1 1 10 100 1000 0.01 1 0.001 0.0001 Mounted on epoxy board. (25mm × 27mm × 0.8mm) Rth(ch-a)=70.2°C/W Rth(ch-a)(t)=r(t)×Rth(ch-a) 0.001 0.01 0.1 1 10 100 1000 0.00001 0.0001 0.01 Pulse width : Pw (s) Drain-Source Voltage : VDS [ V ] www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 5/6 2011.06 - Rev.A RSJ650N10  Measurement circuits 　 Data Sheet Pulse width VGS ID RL D.U.T. VDS VGS VDS 50% 10% 10% 90% 50% 10% 90% RG VDD td(on) ton 90% tr td(off) toff tf Fig.1-1 Switching Time Measurement Circuit VGS Fig.1-2　Switching Waveforms VG ID RL VDS Qg VGS Qgs Qgd IG(Const.) D.U.T. VDD Charge Fig.2-1 Gate Charge Measurement Circuit Fig.2-2 Gate Charge Waveform www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 6/6 2011.06 - Rev.A Notice Notes Thank you for your accessing to ROHM product informations. More detail product informations and catalogs are available, please contact us. ROHM Customer Support System http://www.rohm.com/contact/ www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. R1120A