RSM002P03_07

RSM002P03 Transistors 4V Drive Pch MOSFET RSM002P03 Structure Silicon P-channel MOSFET Dimensions (Unit : mm) VMT3 Features 1) Low On-resistance. 2) Small package (VMT3). 3) 4V drive. (1)Gate (2)Source (3) 0.2 0.22 (1)(2) 0.8 1.2 0.4 0.4 0.8 0.13 0.5 (3)Drain Abbreviated symbol : WP Applications Switching Packaging specifications Package Type RSM002P03 Code Basic ordering unit (pieces) Taping T2L 8000 Inner circuit (3) (1) ∗1 ∗2 0.2 1.2 0.32 (2) ∗1 ESD PROTECTION DIODE ∗2 BODY DIODE (1) Gate (2) Source (3) Drain Absolute maximum ratings (Ta=25°C) Parameter Drain-source voltage Gate-source voltage Drain current Total power dissipation Channel temperature Range of storage temperature ∗1 Pw≤10µs, Duty cycle≤1% ∗2 Each terminal mounted on a recommended land Continuous Pulsed Symbol VDSS VGSS ID IDP ∗1 PD ∗2 Tch Tstg Limits −30 ±20 ±0.2 ±0.4 0.15 150 −55 to +150 Unit V V A A W °C °C Thermal resistance Parameter Channel to ambient ∗ Each terminal mounted on a recommended land Symbol Rth(ch-a) ∗ Limits 833 Unit °C/W Rev.A 1/4 RSM002P03 Transistors Electrical characteristics (Ta=25°C) Parameter Symbol Min. IGSS − Gate-source leakage Drain-source breakdown voltage V(BR) DSS −30 Zero gate voltage drain current − IDSS Gate threshold voltage VGS (th) −1.0 − Static drain-source on-state − RDS (on)∗ resistance − Yfs ∗ 0.2 Forward transfer admittance − Ciss Input capacitance − Output capacitance Coss Reverse transfer capacitance − Crss Turn-on delay time − td (on) ∗ Rise time − tr ∗ Turn-off delay time − td (off) ∗ Fall time − tf ∗ ∗Pulsed Typ. − − − − 0.9 1.4 1.6 − 30 4 5 8 5 30 40 Max. ±10 − −1 −2.5 1.4 2.1 2.4 − − − − − − − − Unit µA V µA V Ω Ω Ω S pF pF pF ns ns ns ns Conditions VGS= ±20V, VDS=0V ID= −1mA, VGS=0V VDS= −30V, VGS=0V VDS= −10V, ID= −1mA ID= −0.2A, VGS= −10V ID= −0.15A, VGS= −4.5V ID= −0.15A, VGS= −4.0V VDS= −10V, ID= −0.15A VDS= −10V VGS= 0V f=1MHz VDD −15V ID= −0.15A VGS= −10V RL= 100Ω RG= 10Ω Body diode characteristics (Source-drain) (Ta=25°C) Parameter Forward voltage Symbol VSD Min. − Typ. − Max. −1.2 Unit V Conditions IS= −0.1A, VGS=0V Rev.A 2/4 RSM002P03 Transistors Electrical characteristics curves 100 GATE-SOURCE VOLTAGE : −VGS (V) Ta=25°C f=1MHz VGS=0V 1000 CAPACITANCE : C (pF) SWITCHING TIME : t (ns) Ciss tf Ta=25°C VDD= −15V VGS= −10V RG=10Ω Pulsed 8 7 Ta=25°C VDD= −15V ID=−250mA RG=10Ω 6 Pulsed 100 td(off) 5 4 3 2 1 0 0 0.2 0.4 0.6 0.8 1 10 Crss Coss 10 td(on) tr 1 0.01 0.1 1 10 100 1 0.01 0.1 1 DRAIN-SOURCE VOLTAGE : −VDS (V) Fig.1 Typical Capacitance vs. Drain-Source Voltage DRAIN CURRENT : −ID (A) TOTAL GATE CHARGE : Qg (nC) Fig.2 Switching Characteristics Fig.3 Dynamic Input Characteristics 1 Ta=125°C 0.1 75°C 25°C −25°C 15 ID= −125mA ID= −250mA REVERSE DRAIN CURRENT : −IDR (A) STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS (Ω) VDS= −10V Pulsed 20 Ta=25°C Pulsed 1 VGS=0V Pulsed DRAIN CURRENT : −ID (A) Ta=125°C 75°C 25°C −25°C 10 0.1 0.01 5 0.001 1.4 1.6 1.8 2.0 2.2 2.4 2.6 2.8 3.0 3.2 3.4 0 0 1 2 3 4 5 6 7 8 9 10 0.01 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 GATE-SOURCE VOLTAGE : −VGS (V) GATE-SOURCE VOLTAGE : −VGS (V) SOURCE-DRAIN VOLTAGE : −VSD (V) Fig.4 Typical Transfer Characteristics Fig.5 Static Drain-Source On-State Resistance vs. Gate-Source Voltage Fig.6 Reverse Drain Current vs. Source-Drain Voltage 10 STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS (on) (Ω) STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS (on) (Ω) Ta=125°C 75°C 25°C −25°C STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS (on) (Ω) VGS= −10V Pulsed Ta=125°C 75°C 25°C −25°C 10 VGS= −4.5V Pulsed 10 Ta=125°C 75°C 25°C −25°C VGS= −4V Pulsed 1 1 1 0.1 0.01 0.1 1 0.1 0.01 0.1 1 0.1 0.01 0.1 1 DRAIN CURRENT : −ID (A) DRAIN CURRENT : −ID (A) DRAIN CURRENT : −ID (A) Fig.7 Static Drain-Source On-State Resistance vs. Drain Current ( Ι ) Fig.8 Static Drain-Source On-State Resistance vs. Drain Current ( ΙΙ ) Fig.9 Static Drain-Source On-State Resistance vs. Drain Current ( ΙΙΙ ) Rev.A 3/4 RSM002P03 Transistors 10 STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS (on) (Ω) Ta=25°C Pulsed VGS= −4V VGS= −4.5V VGS= −10V 1 0 0.01 0.1 1 DRAIN CURRENT : −ID (A) Fig.10 Static Drain-Source On-State Resistance vs. Drain Current ( Ι ) Rev.A 4/4 Appendix Notes No technical content pages of this document may be reproduced in any form or transmitted by any means without prior permission of ROHM CO.,LTD. The contents described herein are subject to change without notice. The specifications for the product described in this document are for reference only. Upon actual use, therefore, please request that specifications to be separately delivered. Application circuit diagrams and circuit constants contained herein are shown as examples of standard use and operation. Please pay careful attention to the peripheral conditions when designing circuits and deciding upon circuit constants in the set. Any data, including, but not limited to application circuit diagrams information, described herein are intended only as illustrations of such devices and not as the specifications for such devices. ROHM CO.,LTD. disclaims any warranty that any use of such devices shall be free from infringement of any third party's intellectual property rights or other proprietary rights, and further, assumes no liability of whatsoever nature in the event of any such infringement, or arising from or connected with or related to the use of such devices. Upon the sale of any such devices, other than for buyer's right to use such devices itself, resell or otherwise dispose of the same, no express or implied right or license to practice or commercially exploit any intellectual property rights or other proprietary rights owned or controlled by ROHM CO., LTD. is granted to any such buyer. Products listed in this document are no antiradiation design. The products listed in this document are designed to be used with ordinary electronic equipment or devices (such as audio visual equipment, office-automation equipment, communications devices, electrical appliances and electronic toys). Should you intend to use these products with equipment or devices which require an extremely high level of reliability and the malfunction of with would directly endanger human life (such as medical instruments, transportation equipment, aerospace machinery, nuclear-reactor controllers, fuel controllers and other safety devices), please be sure to consult with our sales representative in advance. About Export Control Order in Japan Products described herein are the objects of controlled goods in Annex 1 (Item 16) of Export Trade Control Order in Japan. In case of export from Japan, please confirm if it applies to "objective" criteria or an "informed" (by MITI clause) on the basis of "catch all controls for Non-Proliferation of Weapons of Mass Destruction. Appendix1-Rev1.1