RSQ015P10TR

RSQ015P10 Data Sheet Pch -100V -1.5A Power MOSFET lOutline -100V VDSS RDS(on) (Max.) 470mW ID -1.5A PD 1.25W lFeatures (6) TSMT6 (5) SOT-457T (4) (1) (2) (3) lInner circuit 1) Low on - resistance. (1) (2) (3) (4) (5) (6) 2) Built-in G-S Protection Diode. 3) Small Surface Mount Package (TSMT6). 4) Pb-free lead plating ; RoHS compliant Drain Drain Gate Source Drain Drain *1 ESD PROTECTION DIODE *2 BODY DIODE lPackaging specifications Packaging Taping Reel size (mm) lApplication 180 Tape width (mm) DC/DC converters 8 Type Basic ordering unit (pcs) 3,000 Taping code TR Marking ZN lAbsolute maximum ratings(Ta = 25°C) Parameter Symbol Value Unit Drain - Source voltage VDSS -100 V Continuous drain current ID *1 1.5 A ID,pulse *2 6.0 A VGSS 20 V PD *3 1.25 W PD *4 0.6 W Tj 150 °C Tstg -55 to +150 °C Pulsed drain current Gate - Source voltage Power dissipation Junction temperature Range of storage temperature www.rohm.com © 2014 ROHM Co., Ltd. All rights reserved. 1/11 2014.05 - Rev.C Data Sheet RSQ015P10 lThermal resistance Values Parameter Symbol Thermal resistance, junction - ambient Unit Min. Typ. Max. RthJA *3 - - 100 °C/W RthJA *4 - - 208 °C/W lElectrical characteristics(Ta = 25°C) Values Parameter Drain - Source breakdown voltage Breakdown voltage temperature coefficient Symbol V(BR)DSS Conditions VGS = 0V, ID = -1mA ΔV(BR)DSS ID= -1mA ΔTj referenced to 25°C Unit Min. Typ. Max. -100 - - V - -109 - mV/°C Zero gate voltage drain current IDSS VDS = -100V, VGS = 0V - - -1 mA Gate - Source leakage current IGSS VGS = 20V, VDS = 0V - - 10 mA Gate threshold voltage VGS (th) VDS = -10V, ID = -1mA -1.0 - -2.5 V Gate threshold voltage temperature coefficient ΔV(GS)th ΔTj ID= -1mA referenced to 25°C - 3.2 - mV/°C VGS= -10V, ID= -1.5A - 350 470 VGS= -4.5V, ID= -0.75A - 380 510 VGS= -4.0V, ID= -0.75A - 400 540 VGS= -10V, ID= -1.5A, Tj=125C - 610 850 RG f = 1MHz, open drain - 8.5 - W gfs *5 VDS= -10V, ID= -1.5A 1.5 4.0 - S Static drain - source on - state resistance Gate input resistannce Transconductance RDS(on) *5 mW *1 Limited only by maximum temperature allowed. *2 Pw  10ms, Duty cycle  1% *3 Mounted on a ceramic board (30×30×0.8mm) *4 Mounted on a FR4 (15×20×0.8mm) *5 Pulsed www.rohm.com © 2014 ROHM Co., Ltd. All rights reserved. 2/11 2014.05 - Rev.C Data Sheet RSQ015P10 lElectrical characteristics(Ta = 25°C) Values Parameter Symbol Conditions Unit Min. Typ. Max. Input capacitance Ciss VGS = 0V - 950 - Output capacitance Coss VDS = -25V - 45 - Reverse transfer capacitance Crss f = 1MHz - 20 - VDD ⋍ -50V, VGS = -10V - 10 - ID = -0.75A - 15 - td(off) *5 RL = 66W - 60 - tf *5 RG = 10W - 10 - Turn - on delay time td(on) *5 tr *5 Rise time Turn - off delay time Fall time pF ns lGate Charge characteristics(Ta = 25°C) Values Parameter Total gate charge Symbol Qg *5 Gate - Source charge Qgs *5 Gate - Drain charge Qgd *5 Conditions Unit Min. Typ. Max. VDD ⋍ -50V, ID= -1.5A VGS = -5V - 17.0 - VDD ⋍ -50V, ID= -1.5A VGS = -10V - 32 - - 4.5 - - 5.0 - VDD ⋍ -50V, ID= -1.5A VGS = -5V nC lBody diode electrical characteristics (Source-Drain)(Ta = 25°C) Values Parameter Inverse diode continuous, forward current Forward voltage www.rohm.com © 2014 ROHM Co., Ltd. All rights reserved. Symbol IS *1 VSD *5 Conditions Unit Min. Typ. Max. Ta = 25°C - - -1.0 A VGS = 0V, Is = -1.5A - - -1.2 V 3/11 2014.05 - Rev.C Data Sheet RSQ015P10 lElectrical characteristic curves Fig.2 Maximum Safe Operating Area Fig.1 Power Dissipation Derating Curve 100 100 Operation in this area is limited by RDS(on) (VGS = -10V) 10 Drain Current : -ID [A] Power Dissipation : PD/PD max. [%] 120 80 60 40 20 0 50 100 150 PW = 10ms 0.1 DC Operation Ta=25ºC Single Pulse Mounted on a ceramic board. (30mm × 30mm × 0.8mm) 0.01 0.1 200 1 10 100 1000 Drain - Source Voltage : -VDS [V] Junction Temperature : Tj [°C] Fig.3 Normalized Transient Thermal Resistance vs. Pulse Width Fig.4 Single Pulse Maxmum Power dissipation 10 1000 Ta=25ºC Single Pulse Ta=25ºC Single Pulse 1 top D = 1 D = 0.5 D = 0.1 D = 0.05 D = 0.01 bottom Single 0.1 0.01 0.001 0.0001 Rth(ch-a)=100ºC/W Rth(ch-a)(t)=r(t)×Rth(ch-a) Mounted on ceramic board (30mm × 30mm × 0.8mm) 0.01 1 Peak Transient Power : P(W) Normalized Transient Thermal Resistance : r(t) PW = 1ms 1 0.001 0 PW = 100ms 10 1 0.0001 100 Pulse Width : PW [s] www.rohm.com © 2014 ROHM Co., Ltd. All rights reserved. 100 0.01 1 100 Pulse Width : PW [s] 4/11 2014.05 - Rev.C Data Sheet RSQ015P10 lElectrical characteristic curves Fig.5 Typical Output Characteristics(I) Fig.6 Typical Output Characteristics(II) 1.5 1.5 VGS= -10.0V VGS= -10.0V VGS= -4.5V VGS= -2.8V VGS= -4.0V Drain Current : -ID [A] Drain Current : -ID [A] VGS= -4.5V 1 0.5 VGS= -2.5V VGS= -4.0V 1 VGS= -2.8V VGS= -2.5V 0.5 Ta=25ºC Pulsed Ta=25ºC Pulsed 0 0 0 0.2 0.4 0.6 0.8 1 0 2 6 8 10 Drain - Source Voltage : -VDS [V] Drain - Source Voltage : -VDS [V] Fig.8 Typical Transfer Characteristics Fig.7 Breakdown Voltage vs. Junction Temperature 10 160 VDS= -10V Pulsed VGS = 0V ID = -1mA Pulsed 140 1 120 Drain Current : -ID [A] Drain - Source Breakdown Voltage : -V(BR)DSS [V] 4 100 80 60 40 Ta= 125ºC Ta= 75ºC Ta= 25ºC Ta= -25ºC 0.1 0.01 20 0.001 0 -50 0 50 100 0.0 150 Junction Temperature : Tj [°C] www.rohm.com © 2014 ROHM Co., Ltd. All rights reserved. 0.5 1.0 1.5 2.0 2.5 3.0 3.5 Gate - Source Voltage : -VGS [V] 5/11 2014.05 - Rev.C Data Sheet RSQ015P10 lElectrical characteristic curves Fig.9 Gate Threshold Voltage vs. Junction Temperature Fig.10 Transconductance vs. Drain Current 10 VDS= -10V Pulsed Transconductance : gfs [S] Gate Threshold Voltage : -VGS(th) [V] 3 2 1 VDS = -10V ID = -1mA Pulsed 0 50 100 150 Junction Temperature : Tj [°C] Ta= -25ºC Ta=25ºC Ta=75ºC Ta=125ºC 0.1 0.01 0.001 0 -50 1 0.01 0.1 1 10 Drain Current : -ID [A] Fig.11 Drain CurrentDerating Curve Fig.12 Static Drain - Source On - State Resistance vs. Gate Source Voltage Drain Current Dissipation : ID/ID max. (%) 1 0.8 0.6 0.4 0.2 0 -25 0 25 50 75 100 125 150 Static Drain - Source On-State Resistance : RDS(on) [mW] 1.2 ID = -0.75A Gate - Source Voltage : -VGS [V] Junction Temperature : Tj [ºC] www.rohm.com © 2014 ROHM Co., Ltd. All rights reserved. ID = -1.5A Ta=25ºC Pulsed 6/11 2014.05 - Rev.C Data Sheet RSQ015P10 lElectrical characteristic curves Fig.13 Static Drain - Source On - State Resistance vs. Drain Current(I) Fig.14 Static Drain - Source On - State Resistance vs. Junction Temperature 700 Ta=25ºC Pulsed VGS= -4.0V VGS= -4.5V VGS= -10V 100 0.01 0.1 1 10 Static Drain - Source On-State Resistance : RDS(on) [mW] Static Drain - Source On-State Resistance : RDS(on) [mW] 1000 600 500 400 300 200 VGS = -10V ID = -1.5A Pulsed 100 0 -50 -25 Drain Current : -ID [A] Ta=125ºC Ta=75ºC Ta=25ºC Ta= -25ºC 100 10 0.01 0.1 1 10 Drain Current : -ID [A] www.rohm.com © 2014 ROHM Co., Ltd. All rights reserved. 50 75 100 125 150 Fig.16 Static Drain-Source On-State Resistance vs. Drain Current(III) Static Drain - Source On-State Resistance : RDS(on) [mW] Static Drain - Source On-State Resistance : RDS(on) [mW] 10000 1000 25 Junction Temperature : Tj [ºC] Fig.15 Static Drain - Source On - State Resistance vs. Drain Current(II) VGS= -10V Pulsed 0 10000 VGS= -4.5V Pulsed Ta=125ºC Ta=75ºC Ta=25ºC Ta= -25ºC 1000 100 10 0.01 0.1 1 10 Drain Current : -ID [A] 7/11 2014.05 - Rev.C Data Sheet RSQ015P10 lElectrical characteristic curves Fig.17 Static Drain - Source On - State Resistance vs. Drain Current(IV) Fig.18 Typical Capacitance vs. Drain - Source Voltage 10000 VGS= -4.0V Pulsed Ta=125ºC Ta=75ºC Ta=25ºC Ta= -25ºC 1000 1000 Capacitance : C [pF] Static Drain - Source On-State Resistance : RDS(on) [mW] 10000 100 Ciss 100 Coss 10 Ta = 25ºC f = 1MHz VGS = 0V 1 10 0.01 0.1 1 0.01 10 Drain Current : -ID [A] 1 100 Drain - Source Voltage : -VDS [V] Fig.19 Switching Characteristics Fig.20 Dynamic Input Characteristics 10000 10 Gate - Source Voltage : -VGS [V] Ta=25ºC VDD≒ -50V VGS= -10V RG=10W Pulsed tf 1000 Switching Time : t [ns] Crss td(off) 100 td(on) 10 tr 1 0.01 0.1 1 6 4 Ta=25ºC VDD= -50V ID= -1.5A Pulsed 2 0 10 0 Drain Current : -ID [A] www.rohm.com © 2014 ROHM Co., Ltd. All rights reserved. 8 5 10 15 20 25 30 35 Total Gate Charge : Qg [nC] 8/11 2014.05 - Rev.C Data Sheet RSQ015P10 lElectrical characteristic curves Fig.21 Source Current vs. Source Drain Voltage 10 Source Current : -IS [A] VGS=0V Pulsed Ta=125ºC Ta=75ºC Ta=25ºC Ta= -25ºC 1 0.1 0.01 0.0 0.5 1.0 1.5 2.0 Source-Drain Voltage : -VSD [V] www.rohm.com © 2014 ROHM Co., Ltd. All rights reserved. 9/11 2014.05 - Rev.C Data Sheet RSQ015P10 lMeasurement circuits Fig.1-1 Switching Time Measurement Circuit Fig.1-2　Switching Waveforms Fig.2-1 Gate Charge Measurement Circuit Fig.2-2 Gate Charge Waveform www.rohm.com © 2014 ROHM Co., Ltd. All rights reserved. 10/11 2014.05 - Rev.C Data Sheet RSQ015P10 lDimensions (Unit : mm) D A e TSMT6 c L1 Lp HE E Q b x S A A3 e1 A l1 y S A1 A2 e S b2 Patterm of terminal position areas DIM A A1 A2 A3 b c D E e HE L1 Lp Q x y DIM e1 b2 l1 MILIMETERS MIN MAX 1.00 0.00 0.10 0.75 0.95 0.25 0.35 0.50 0.10 0.26 2.80 3.00 1.50 1.80 0.95 2.60 3.00 0.30 0.60 0.40 0.70 0.05 0.25 0.20 0.10 MILIMETERS MIN MAX 2.10 0.70 0.90 INCHES MIN 0 0.03 MAX 0.039 0.004 0.037 0.01 0.014 0.004 0.11 0.059 0.02 0.01 0.118 0.071 0.04 0.102 0.012 0.016 0.002 - 0.118 0.024 0.028 0.01 0.008 0.004 INCHES MIN MAX 0.08 - 0.028 0.035 Dimension in mm/inches www.rohm.com © 2014 ROHM Co., Ltd. All rights reserved. 11/11 2014.05 - Rev.C Notice Notes 1) The information contained herein is subject to change without notice. 2) Before you use our Products, please contact our sales representative and verify the latest specifications : 3) Although ROHM is continuously working to improve product reliability and quality, semiconductors can break down and malfunction due to various factors. Therefore, in order to prevent personal injury or fire arising from failure, please take safety measures such as complying with the derating characteristics, implementing redundant and fire prevention designs, and utilizing backups and fail-safe procedures. ROHM shall have no responsibility for any damages arising out of the use of our Poducts beyond the rating specified by ROHM. 4) Examples of application circuits, circuit constants and any other information contained herein are provided only to illustrate the standard usage and operations of the Products. The peripheral conditions must be taken into account when designing circuits for mass production. 5) The technical information specified herein is intended only to show the typical functions of and examples of application circuits for the Products. ROHM does not grant you, explicitly or implicitly, any license to use or exercise intellectual property or other rights held by ROHM or any other parties. ROHM shall have no responsibility whatsoever for any dispute arising out of the use of such technical information. 6) The Products are intended for use in general electronic equipment (i.e. AV/OA devices, communication, consumer systems, gaming/entertainment sets) as well as the applications indicated in this document. 7) The Products specified in this document are not designed to be radiation tolerant. 8) For use of our Products in applications requiring a high degree of reliability (as exemplified below), please contact and consult with a ROHM representative : transportation equipment (i.e. cars, ships, trains), primary communication equipment, traffic lights, fire/crime prevention, safety equipment, medical systems, servers, solar cells, and power transmission systems. 9) Do not use our Products in applications requiring extremely high reliability, such as aerospace equipment, nuclear power control systems, and submarine repeaters. 10) ROHM shall have no responsibility for any damages or injury arising from non-compliance with the recommended usage conditions and specifications contained herein. 11) ROHM has used reasonable care to ensur the accuracy of the information contained in this document. However, ROHM does not warrants that such information is error-free, and ROHM shall have no responsibility for any damages arising from any inaccuracy or misprint of such information. 12) Please use the Products in accordance with any applicable environmental laws and regulations, such as the RoHS Directive. For more details, including RoHS compatibility, please contact a ROHM sales office. ROHM shall have no responsibility for any damages or losses resulting non-compliance with any applicable laws or regulations. 13) When providing our Products and technologies contained in this document to other countries, you must abide by the procedures and provisions stipulated in all applicable export laws and regulations, including without limitation the US Export Administration Regulations and the Foreign Exchange and Foreign Trade Act. 14) This document, in part or in whole, may not be reprinted or reproduced without prior consent of ROHM. 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