RSQ045N03
Transistors
4V Drive Nch MOSFET
RSQ045N03
Structure Silicon N-channel MOSFET Dimensions (Unit : mm)
TSMT6
Features 1) Low On-resistance. 2) Space saving, small surface mount package (TSMT6). 3) Low voltage drive (4V drive).
Applications Switching
Each lead has same dimensions Abbreviated symbol : QL
Packaging specifications
Package Type RSQ045N03 Code Basic ordering unit (pieces) Taping TR 3000
Inner circuit
(6) (5) (4)
∗2
∗1
(1) Drain (2) Drain (3) Gate (4) Source (5) Drain (6) Drain
(1)
(2)
(3)
∗1 ESD PROTECTION DIODE ∗2 BODY DIODE
Absolute maximum ratings (Ta=25°C)
Parameter Drain-source voltage Gate-source voltage Drain current Source current (Body diode) Total power dissipation Channel temperature Range of storage temperature
∗1 Pw≤10µs, Duty cycle≤1% ∗2 Mounted on a ceramic board
Continuous Pulsed Continuous Pulsed
Symbol VDSS VGSS ID IDP ∗1 IS ISP ∗1 PD ∗2 Tch Tstg
Limits 30 20 ±4.5 ±18 1.0 18 1.25 150 −55 to +150
Unit V V A A A A W °C °C
Thermal resistance
Parameter Channel to ambient
∗ Mounted on a ceramic board
Symbol Rth(ch-a) ∗
Limits 100
Unit °C/W
Rev.A
1/3
RSQ045N03
Transistors
Electrical characteristics (Ta=25°C)
Parameter Symbol IGSS Gate-source leakage Drain-source breakdown voltage V(BR) DSS Zero gate voltage drain current IDSS Gate threshold voltage VGS (th) Static drain-source on-state resistance Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Total gate charge Gate-source charge Gate-drain charge
∗Pulsed
RDS (on)∗
Yfs Ciss Coss Crss td (on) tr td (off) tf Qg Qgs Qgd
∗
∗ ∗ ∗ ∗ ∗ ∗ ∗
Min. − 30 − 1.0 − − − 3.5 − − − − − − − − − −
Typ. − − − − 27 36 40 − 520 150 95 12 19 41 14 6.8 1.6 2.3
Max. 10 − 1 2.5 38 51 56 − − − − − − − − 9.5 − −
Unit µA V µA V mΩ mΩ mΩ S pF pF pF ns ns ns ns nC nC nC
Conditions VGS=20V, VDS=0V ID= 1mA, VGS=0V VDS= 30V, VGS=0V VDS= 10V, ID= 1mA ID= 4.5A, VGS= 10V ID= 4.5A, VGS= 4.5V ID= 4.5A, VGS= 4V VDS= 10V, ID= 4.5A VDS= 10V VGS=0V f=1MHz VDD 15V ID= 2.25A VGS= 10V RL=6.67Ω RG=10Ω VDD 15V VGS= 5V ID= 4.5A RL=3.33Ω RG=10Ω
Body diode characteristics (Source-drain) (Ta=25°C)
Parameter Forward voltage Symbol VSD Min. − Typ. − Max. 1.2 Unit V Conditions IS= 1.0A, VGS=0V
Electrical characteristic curves
STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS (on) (mΩ)
STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS (on) (mΩ)
10
VDS=10V Pulsed
1000
Ta=25°C Pulsed VGS=4.0V VGS=4.5V VGS=10V
1000
Ta=125°C Ta=75°C Ta=25°C Ta= −25°C
VGS=10V Pulsed
DRAIN CURRENT : ID (A)
1
Ta=125 C 75 C 25 C −25 C
100
100
0.1
10
10
0.01
0.001 0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
1 0.1
1
10
1 0.1
1
10
GATE-SOURCE VOLTAGE: VGS (V)
DRAIN CURRENT : ID (A)
DRAIN CURRENT : ID (A)
Fig.1 Typical Transfer Characteristics
Fig.2 Static Drain-Source On-State Resistance vs. Drain Current (Ι)
Fig.3 Static Drain-Source On-State Resistance vs. Drain Current (ΙΙ)
Rev.A
2/3
RSQ045N03
Transistors
STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS (on) (mΩ) STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS (on) (mΩ)
VGS=4.5V Pulsed
VGS=4.0V Pulsed
STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS (on) (mΩ)
1000
Ta=125°C 75°C 25°C −25°C
1000
Ta=125°C 75°C 25°C −25°C
200
ID=4.5A
Ta=25°C Pulsed
150
ID=2.25A
100
100
100
10
10
50
1 0.1
1
10
1 0.1
1
10
0
0
2
4
6
8
10
12
14
DRAIN CURRENT : ID (A)
DRAIN CURRENT : ID (A)
GATE-SOURCE VOLTAGE : VGS (V)
Fig.4 Static Drain-Source On-State Resistance vs. Drain Current (ΙΙΙ)
Fig.5 Static Drain-Source On-State Resistance vs. Drain Current (ΙV)
Fig.6 Static Drain-Source On-State Resistance vs. Gate-Source Voltage
10
VGS=0V Pulsed
10000
SOURCE CURRENT : Is (A)
Ta=25 C f=1MHz VGS=0V
1000
Capacitance : C (pF)
1
Ta=125°C 75°C 25°C −25°C
SWITCHING TIME : t (ns)
tf
100
Ta=25 C VDD=15V VGS=10V RG=10Ω Pulsed
1000
Ciss
td (off)
Coss
0.1
100
Crss
td (on)
10
tr
0.01 0.0
0.5
1.0
1.5
10 0.01
0.1
1
10
100
1 0.01
0.1
1
10
SOURCE-DRAIN VOLTAGE : VSD (V)
DRAIN-SOURCE VOLTAGE : VDS (V)
DRAIN CURRENT : ID (A)
Fig.7 Source Current vs. Source-Drain Voltage
Fig.8 Typical Capacitance vs. Drain-Source Voltage
Fig.9 Switching Characteristics
10
GATE-SOURCE VOLTAGE : VGS (V)
Ta=25°C 9 VDD=15V ID=7.5A 8 R =10Ω G Pulsed 7 6 5 4 3 2 1 0 0 2 4 6 8 10 12 14
TOTAL GATE CHARGE : Qg (nC)
Fig.10 Dynamic Input Characteristics
Rev.A
3/3
Appendix
Notes
No technical content pages of this document may be reproduced in any form or transmitted by any means without prior permission of ROHM CO.,LTD. The contents described herein are subject to change without notice. The specifications for the product described in this document are for reference only. Upon actual use, therefore, please request that specifications to be separately delivered. Application circuit diagrams and circuit constants contained herein are shown as examples of standard use and operation. Please pay careful attention to the peripheral conditions when designing circuits and deciding upon circuit constants in the set. Any data, including, but not limited to application circuit diagrams information, described herein are intended only as illustrations of such devices and not as the specifications for such devices. ROHM CO.,LTD. disclaims any warranty that any use of such devices shall be free from infringement of any third party's intellectual property rights or other proprietary rights, and further, assumes no liability of whatsoever nature in the event of any such infringement, or arising from or connected with or related to the use of such devices. Upon the sale of any such devices, other than for buyer's right to use such devices itself, resell or otherwise dispose of the same, no express or implied right or license to practice or commercially exploit any intellectual property rights or other proprietary rights owned or controlled by ROHM CO., LTD. is granted to any such buyer. Products listed in this document are no antiradiation design.
The products listed in this document are designed to be used with ordinary electronic equipment or devices (such as audio visual equipment, office-automation equipment, communications devices, electrical appliances and electronic toys). Should you intend to use these products with equipment or devices which require an extremely high level of reliability and the malfunction of which would directly endanger human life (such as medical instruments, transportation equipment, aerospace machinery, nuclear-reactor controllers, fuel controllers and other safety devices), please be sure to consult with our sales representative in advance. It is our top priority to supply products with the utmost quality and reliability. However, there is always a chance of failure due to unexpected factors. Therefore, please take into account the derating characteristics and allow for sufficient safety features, such as extra margin, anti-flammability, and fail-safe measures when designing in order to prevent possible accidents that may result in bodily harm or fire caused by component failure. ROHM cannot be held responsible for any damages arising from the use of the products under conditions out of the range of the specifications or due to non-compliance with the NOTES specified in this catalog.
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Appendix1-Rev2.0
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