RSR010N10

Data Sheet 4V Drive Nch MOSFET RSR010N10  Structure Silicon N-channel MOSFET  Dimensions (Unit : mm) TSMT3 Features 1) Low on-resistance. 2) Built-in G-S Protection Diode. 3) Small Surface Mount Package (TSMT3). (3) (1) (2) Abbreviated symbol : ZJ  Application Switching  Packaging specifications Package Type Code Basic ordering unit (pieces) RSR010N10 Taping TL 3000   Inner circuit (3) ∗1 ∗2  Absolute maximum ratings (Ta = 25C) Symbol Parameter Drain-source voltage Gate-source voltage Drain current Source current (Body Diode) Power dissipation Channel temperature Range of storage temperature *1 Pw10s, Duty cycle1% *2 Mounted on a ceramic board. Limits 100 20 1 4 0.8 4 1 150 55 to 150 Unit V V A A A A W C C VDSS Continuous Pulsed Continuous Pulsed VGSS ID IDP *1 IS ISP PD Tch Tstg *1 *2 (1) Gate (2) Source (3) Drain (1) (2) ∗1 ESD PROTECTION DIODE ∗2 BODY DIODE  Thermal resistance Parameter Channel to Ambient *Mounted on a ceramic board. Symbol Rth (ch-a)* Limits 125 Unit C / W www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 1/6 2011.05 - Rev.A RSR010N10  Electrical characteristics (Ta = 25 C) Parameter Gate-source leakage Zero gate voltage drain current Gate threshold voltage Static drain-source on-state resistance Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Total gate charge Gate-source charge Gate-drain charge *Pulsed Data Sheet Symbol IGSS IDSS VGS (th) * RDS (on) l Yfs l* Ciss Coss Crss td(on) * tr * td(off) * tf * Qg * Qgs * Qgd * Min. 100 1.0 1 - Typ. 370 400 410 140 20 12 6 9 22 15 3.5 0.9 0.8 Max. 10 1 2.5 520 560 580 - Unit A V A V Conditions VGS=20V, VDS=0V ID=1mA, VGS=0V VDS=100V, VGS=0V VDS=10V, ID=1mA ID=1A, VGS=10V Drain-source breakdown voltage V(BR)DSS m ID=1A, VGS=4.5V ID=1A, VGS=4.0V S pF pF pF ns ns ns ns nC nC nC ID=1A, VDS=10V VDS=25V VGS=0V f=1MHz ID=0.5A, VDD 50V VGS=10V RL=100 RG=10 ID=1A, VDD 50V VGS=5V Body diode characteristics (Source-Drain) (Ta = 25C) Parameter Forward Voltage *Pulsed Symbol VSD * Min. - Typ. - Max. 1.2 Unit V Conditions Is=1A, VGS=0V www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 2/6 2011.05 - Rev.A RSR010N10 Electrical characteristic curves (Ta=25C) Fig.1 Typical Output Characteristics (Ⅰ) 1 VGS=10.0V 0.8 VGS=4.5V VGS=2.5V VGS=4.0V VGS=2.8V 　 Data Sheet Fig.2 Typical Output Characteristics (Ⅱ) 1 VGS=2.5V 0.8 VGS=10.0V Drain Current : ID [A] VGS=4.5V 0.6 VGS=4.0V VGS=2.8V 0.4 Ta=25°C pulsed Drain Current : ID [A] 0.6 0.4 0.2 Ta=25°C pulsed 0 0 0.2 0.4 0.6 0.8 1 0.2 0 0 2 4 6 8 10 Drain-Source Voltage : VDS [V] Fig.3 Static Drain-Source On-State Resistance vs. Drain Current 10000 Ta=25°C pulsed Static Drain-Source On-State Resistance RDS(on) [mΩ] VGS=4.0V VGS=4.5V VGS=10V 10000 VGS=10V pulsed Static Drain-Source On-State Resistance RDS(on) [mΩ] Drain-Source Voltage : VDS [V] Fig.4 Static Drain-Source On-State Resistance vs. Drain Current 1000 1000 Ta=125°C Ta=75°C Ta=25°C Ta=-25°C 100 100 10 0.01 0.1 1 10 10 0.01 0.1 1 10 Drain Current : ID [A] Drain Current : ID [A] Fig.6 Static Drain-Source On-State Resistance vs. Drain Current 10000 Fig.5 Static Drain-Source On-State Resistance vs. Drain Current 10000 VGS=4.5V pulsed Static Drain-Source On-State Resistance RDS(on) [mΩ] Ta=125°C Ta=75°C Ta=25°C Ta=-25°C VGS=4V pulsed Static Drain-Source On-State Resistance RDS(on) [mΩ] Ta=125°C Ta=75°C Ta=25°C Ta=-25°C 1000 1000 100 100 10 0.01 0.1 1 10 10 0.01 0.1 1 10 Drain Current : ID [A] Drain Current : ID [A] www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 3/6 2011.05 - Rev.A RSR010N10 　 Data Sheet Fig.7 Forward Transfer Admittance vs. Drain Current 10 VDS=10V pulsed 10 VDS=10V pulsed Fig.8 Typical Transfer Characteristics Forward Transfer Admittance Yfs [S] 1 Drain Currnt : ID [A] 1 Ta=125°C Ta=75°C Ta=25°C Ta=-25°C 0.1 Ta=125°C Ta=75°C Ta=25°C Ta=-25°C 0.1 0.01 0.01 0.01 0.001 0.1 1 10 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 Drain Current : ID [A] Gate-Source Voltage : VGS [V] Fig.9 Source Current vs. Source-Drain Voltage 10 VGS=0V pulsed Static Drain-Source On-State Resistance RDS(on) [mΩ] Fig.10 Static Drain-Source On-State Resistance vs. Gate-Source Voltage 1000 Ta=25°C pulsed 800 ID=0.5A ID=1.0A Source Current : Is [A] 1 Ta=125°C Ta=75°C Ta=25°C Ta=-25°C 0.1 600 400 200 0.01 0.0 0.5 1.0 1.5 2.0 0 0 2 4 6 8 10 Gate-Source Voltage : VGS [V] Source-Drain Voltage : VSD [V] Fig.11 Switching Characteristics 1000 VDD≒50V VGS=10V RG=10Ω Ta=25°C Pulsed Switching Time : t [ns] 100 td(off) tf 10 Ta=25°C VDD=50V ID=1A Pulsed Fig.12 Dynamic Input Characteristics 8 Gate-Source Voltage : VGS [V] 6 10 tr 4 td(on) 2 1 0.01 0.1 1 10 Drain Current : ID [A] 0 0 2 4 6 8 10 Total Gate Charge : Qg [nC] www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 4/6 2011.05 - Rev.A RSR010N10 　 Data Sheet Fig.13 Typical Capacitance vs. Drain-Source Voltage 1000 Ta=25°C f=1MHz VGS=0V 1 Capacitance : C [pF] 100 Drain Current : ID [ A ] Ciss 10 Fig.14 Maximum Safe Operating Area Operation in this area is limited by RDS(on) (VGS = 10V) PW = 100μs 0.1 PW = 1ms PW = 10ms 10 Coss Crss 0.01 Ta=25°C Single Pulse Mounted on a ceramic board. (30mm × 30mm × 0.8mm) 0.1 1 10 DC Operation 1 0.01 0.1 1 10 100 1000 0.001 100 1000 Drain-Source Voltage : VDS [V] Drain-Source Voltage : VDS [ V ] Fig.15 Normalized Transient Thermal Resistance v.s. Pulse Width 10 Normalized Transient Thermal Resistance : r （t） Ta=25°C Single Pulse 1 0.1 0.01 Mounted on a ceramic board. (30mm × 30mm × 0.8mm) Rth(ch-a)=125°C/W Rth(ch-a)(t)=r(t)×Rth(ch-a) 0.001 0.0001 0.001 0.01 0.1 1 10 100 1000 Pulse width : Pw (s) www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 5/6 2011.05 - Rev.A RSR010N10  Measurement circuits Pulse width Data Sheet VGS ID RL D.U.T. VDS VGS VDS 50% 10% 10% 90% 50% 10% 90% RG VDD td(on) ton 90% tr td(off) toff tf Fig.1-1 Switching Time Measurement Circuit VGS Fig.1-2　Switching Waveforms VG ID RL VDS Qg VGS Qgs Qgd IG(Const.) D.U.T. VDD Charge Fig.2-1 Gate Charge Measurement Circuit Fig.2-2 Gate Charge Waveform www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 6/6 2011.05 - Rev.A Notice Notes Thank you for your accessing to ROHM product informations. More detail product informations and catalogs are available, please contact us. ROHM Customer Support System http://www.rohm.com/contact/ www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. R1120A