RSR020N06

4V Drive Nch MOS FET RSR020N06 Structure Silicon N-channel MOSFET Dimensions (Unit : mm) TSMT3 1.0MAX 2.9 0.4 (3) 0.85 0.7 Features 1) Low on-resistance. 2) Built-in G-S Protection Diode. 3) Small Surface Mount Package (TSMT3) . (1) Gate (2) Source 1.6 2.8 0~0.1 (1) (2) 0.95 0.95 1.9 0.16 Each lead has same dimensions Abbreviated symbol : PZ Application Switching (3) Drain Inner circuit (3) (3) Packaging specifications Package Type RSR020N06 Code Basic ordering unit (pieces) Taping TL 3000 ∗1 (2) ∗1 ESD PROTECTION DIODE ∗2 BODY DIODE (1) ∗2 (1) (2) (1) Gate (2) Source (3) Drain Absolute maximum ratings (Ta=25°C) Parameter Drain-source voltage Gate-source voltage Drain current Source current (Body diode) Continuous Pulsed Continuous Pulsed Symbol VDSS VGSS ID IDP ∗1 IS ISP ∗1 PD ∗2 Tch Tstg Limits 60 ±20 ±2 ±8 0.8 8 1.0 150 −55 to +150 Unit V V A A A A W °C °C Total power dissipation Range of channel temperature Storage temperature ∗1 Pw≤10µs, Duty cycle≤1% ∗2 When mounted on a ceramic board. Thermal resistance Parameter Channel to ambient ∗2 When mounted on a ceramic board. Symbol Rth (ch-a) ∗ Limits 125 Unit °C / W www.rohm.com c ○ 2009 ROHM Co., Ltd. All rights reserved. 0.3~0.6 1/4 2009.06 - Rev.A RSR020N06 Electrical characteristics (Ta=25°C) Parameter Symbol Min. − 60 − 1.0 − − − 1.3 − − − − − − − − − − Typ. − − − − 120 140 150 − 180 50 22 6 10 20 6 2.7 1.0 0.6 Max. ±10 − 1 2.5 170 195 210 − − − − − − − − − − − IGSS Gate-source leakage Drain-source breakdown voltage V(BR) DSS Zero gate voltage drain current IDSS Gate threshold voltage VGS (th) Static drain-source on-state resistance Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Total gate charge Gate-source charge Gate-drain charge ∗Pulsed Data Sheet Unit µA V µA V mΩ S pF pF pF ns ns ns ns nC nC nC Conditions VGS=±20V, VDS=0V ID=1mA, VGS=0V VDS=60V, VGS=0V VDS=10V, ID=1mA ID=2A, VGS=10V ID=2A, VGS=4.5V ID=2A, VGS=4V VDS=10V, ID=2A VDS=10V VGS=0V f=1MHz VDD 30V, ID=1A VGS=10V RL 30Ω RG=10Ω VDD 30V ID=2A, VGS=5V RL 15Ω, RG=10Ω RDS (on) ∗ Yfs Ciss Coss Crss td (on) tr td (off) tf Qg Qgs Qgd ∗ ∗ ∗ ∗ ∗ ∗ ∗ ∗ Body diode characteristics (Source-Drain) (Ta=25°C) Parameter Forward voltage ∗Pulsed Symbol Min. VSD ∗ − Typ. − Max. 1.2 Unit V Conditions IS=2A, VGS=0V www.rohm.com c ○ 2009 ROHM Co., Ltd. All rights reserved. 2/4 2009.06 - Rev.A RSR020N06 Electrical characteristic curves 4 VGS= 10V VGS= 4.5V VGS= 4.0V Ta=25°C Pulsed DRAIN CURRENT : ID [A] 4 Ta=25°C Pulsed DRAIN CURRENT : ID [A] VGS= 10V VGS= 4.5V VGS= 4.0V VGS= 2.8V 10 VDS= 10V Pulsed Data Sheet DRAIN CURRENT : ID [A] 3 3 1 Ta= 125°C Ta= 75°C Ta= 25°C Ta= - 25°C VGS= 2.8V 2 2 VGS= 2.4V 0.1 1 VGS= 2.4V 0 0 0.2 0.4 0.6 0.8 1 1 VGS= 2.2V 0.01 0 0 2 4 6 8 10 0.001 0 0.5 1 1.5 2 2.5 3 DRAIN-SOURCE VOLTAGE : VDS[V] Fig.1 Typical Output Characteristics( Ⅰ) DRAIN-SOURCE VOLTAGE : VDS[V] Fig.2 Typical Output Characteristics( Ⅱ) GATE-SOURCE VOLTAGE : VGS[V] Fig.3 Typical Transfer Characteristics 1000 STATIC DRAIN-SOURCE ON-STATE RESISTANCE : R DS(on)[mΩ] STATIC DRAIN-SOURCE ON-STATE RESISTANCE : R DS(on)[mΩ] 100 VGS= 4.0V VGS= 4.5V VGS= 10V 100 Ta=125°C Ta=75°C Ta=25°C Ta= -25°C 10 0.01 STATIC DRAIN-SOURCE ON-STATE RESISTANCE : R DS(on)[mΩ] Ta= 25°C Pulsed 1000 VGS= 10V Pulsed 1000 VGS= 4.5V Pulsed 100 Ta=125°C Ta=75°C Ta=25°C Ta= -25°C 10 0.01 0.1 1 10 0.1 1 10 10 0.01 0.1 1 10 DRAIN-CURRENT : ID [A] Fig.4 Static Drain-Source On-State Resistance vs. Drain Current( Ⅰ) DRAIN-CURRENT : ID [A] Fig.5 Static Drain-Source On-State Resistance vs. Drain Current( Ⅱ) DRAIN-CURRENT : ID [A] Fig.6 Static Drain-Source On-State Resistance vs. Drain Current( Ⅲ) 1000 STATIC DRAIN-SOURCE ON-STATE RESISTANCE : R DS(on)[mΩ] REVERSE DRAIN CURRENT : Is [A] VGS= 4.0V Pulsed FORWARD TRANSFER ADMITTANCE : |Yfs| [S] 10 VDS= 10V Pulsed 10 VGS=0V Pulsed 1 100 Ta=125°C Ta=75°C Ta=25°C Ta= -25°C 1 Ta= -25°C Ta=25°C Ta=75°C Ta=125°C 0.1 0.01 0.1 Ta=125°C Ta=75°C Ta=25°C Ta=-25°C 10 0.01 0.1 1 10 0.1 1 10 0.01 0 0.5 1 1.5 DRAIN-CURRENT : ID [A] Fig.7 Static Drain-Source On-State Resistance vs. Drain Current( Ⅳ) DRAIN-CURRENT : ID [A] Fig.8 Forward Transfer Admittance vs. Drain Current SOURCE-DRAIN VOLTAGE : VSD [V] Fig.9 Reverse Drain Current vs. Sourse-Drain Voltage www.rohm.com c ○ 2009 ROHM Co., Ltd. All rights reserved. 3/4 2009.06 - Rev.A RSR020N06 500 STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS(ON)[mΩ] Ta=25°C Pulsed ID = 1.0A 300 ID = 2.0A 1000 td (off) SWITCHING TIME : t [ns] tf 100 Ta=25°C VDD = 30V VGS=10V RG=10Ω Pulsed 10 GATE-SOURCE VOLTAGE : VGS [V] Ta=25°C VDD = 30V 8 ID = 2.0A RG=10Ω Pulsed 6 Data Sheet 400 200 4 10 100 td (on) 0 0 5 10 15 20 1 0.01 0.1 1 2 tr 0 10 0 1 2 3 4 5 GATE-SOURCE VOLTAGE : VGS[V] Fig.10 Static Drain-Source On-State Resistance vs. Gate Source Voltage DRAIN-CURRENT : ID [A] Fig.11 Switching Characteristics TOTAL GATE CHARGE : Qg [nC] Fig.12 Dynamic Input Characteristics 1000 CAPACITANCE : C [pF] Ta=25°C f=1MHz VGS=0V Ciss 100 Crss Coss 10 0.01 0.1 1 10 100 DRAIN-SOURCE VOLTAGE : VDS[V] Fig.13 Typical Capacitance vs. Drain-Source Voltage Measurement circuit Pulse width VGS ID RL D.U.T. RG VDD VDS VGS VDS 50% 10% 10% 90% td(on) ton tr 90% 50% 10% 90% td(off) toff tf Fig.1-1 Switching time measurement circuit Fig.1-2 Switching waveforms VG VGS ID RL VDS Qg VGS Qgs Qgd IG(Const.) RG D.U.T. VDD Charge Fig.2-1 Gate charge measurement circuit Fig.2-2 Gate charge waveform www.rohm.com c ○ 2009 ROHM Co., Ltd. All rights reserved. 4/4 2009.06 - Rev.A