RSR025N05

Data Sheet 4V Drive Nch MOSFET RSR025N05 Structure Silicon N-channel MOSFET  Dimensions (Unit : mm) TSMT3 Features 1) Low on-resistance. 2) Fast switching speed. 3) Drive circuits can be simple. 4) Parallel use is easy. Application Switching (3) (1) (2) Packaging specifications Package Type Code Basic ordering unit (pieces) RSR025N05 Taping TL 3000   Inner circuit (3) ∗1 ∗2 (1) Gate (2) Source (3) Drain (1) (2) ∗1 BODY DIODE ∗2 ESD PROTECTION DIODE Absolute maximum ratings (Ta = 25°C) Parameter Drain-source voltage Gate-source voltage Drain current Source current (Body Diode) Continuous Pulsed Continuous Pulsed Symbol VDSS VGSS ID IDP IS ISP PD Tch Tstg *1 Limits 45 ±20 2.5 10 0.8 10 1.0 150 55to150 Unit V V A A A A W C C *1 *2 Power dissipation Channel temperature Range of storage temperature *1 Pw≤10s, Duty cycle≤1% *2 Mounted on a ceramic board Thermal resistance Parameter Channel to Ambient * Mounted on a ceramic board Symbol Rth (ch-a) * Limits 125 Unit C / W www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 1/6 2011.09 - Rev.A RSR025N05 Electrical characteristics (Ta = 25°C) Parameter Gate-source leakage Zero gate voltage drain current Gate threshold voltage Static drain-source on-state resistance Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Total gate charge Gate-source charge Gate-drain charge *Pulsed 　 Symbol IGSS IDSS VGS (th) * RDS (on) l Yfs l * Ciss Coss Crss td(on) * tr * td(off) * tf * Qg * Qgs * Qgd * Min. 45 1.0 2.0 Typ. 70 95 105 260 90 30 9 11 25 8 3.6 1.5 0.8 Max. 10 1 3.0 100 150 160 S pF pF pF ns ns ns ns nC nC nC Unit A V A V Conditions VGS=20V, VDS=0V ID=1mA, VGS=0V VDS=45V, VGS=0V VDS=10V, ID=1mA ID=2.5A, VGS=10V m ID=2.5A, VGS=4.5V ID=2.5A, VGS=4.0V ID=2.5A, VDS=10V VDS=10V VGS=0V f=1MHz ID=1.25A, VDD VGS=10V RL=20 RG=10 VDD 25V ID=2.5A, VGS=5V 25V Data Sheet Drain-source breakdown voltage V(BR)DSS Body diode characteristics (Source-Drain) (Ta = 25C) Parameter Forward Voltage *Pulsed Symbol VSD * Min. - Typ. - Max. 1.2 Unit V Conditions Is=2.5A, VGS=0V www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 2/6 2011.09 - Rev.A RSR025N05 Electrical characteristic curves (Ta=25C) Fig.1 Typical Output Characteristics (Ⅰ) 5 VGS=10.0V VGS=4.5V 4 VGS=4.0V VGS=3.6V Ta=25°C pulsed 　 Data Sheet Fig.2 Typical Output Characteristics ( Ⅱ) 5 VGS=10.0V 4 Drain Current : ID [A] VGS=4.5V VGS=4.0V Ta=25°C pulsed Drain Current : ID [A] 3 3 VGS=3.2V 2 2 VGS=3.2V VGS=3.0V 1 VGS=3.0V VGS=2.8V 0 0.2 0.4 0.6 0.8 1 VGS=2.8V 0 0 2 4 6 8 10 Drain-Source Voltage : VDS [V] 1 0 Drain-Source Voltage : VDS [V] Fig.3 Static Drain-Source On-State Resistance vs. Drain Current 1000 Ta=25°C pulsed Fig.4 Static Drain-Source On-State Resistance vs. Drain Current 1000 VGS=10V pulsed Static Drain-Source On-State Resistance RDS(on) [mW ] Ta=125°C Ta=75°C Ta=25°C Ta=-25°C Static Drain-Source On-State Resistance RDS(on) [mΩ] VGS=4.0V VGS=4.5V VGS=10V 100 100 10 0.01 0.1 1 10 10 0.01 0.1 1 10 Drain Current : ID [A] Drain Current : ID [A] Fig.5 Static Drain-Source On-State Resistance vs. Drain Current 1000 VGS=4.5V pulsed Static Drain-Source On-State Resistance RDS(on) [mW ] Ta=125°C Ta=75°C Ta=25°C Ta=-25°C Fig.6 Static Drain-Source On-State Resistance vs. Drain Current 1000 VGS=4V pulsed Static Drain-Source On-State Resistance RDS(on) [mW ] Ta=125°C Ta=75°C Ta=25°C Ta=-25°C 100 100 10 0.01 0.1 1 10 10 0.01 0.1 1 10 Drain Current : ID [A] Drain Current : ID [A] www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 3/6 2011.09 - Rev.A RSR025N05 　 Data Sheet Fig.7 Forward Transfer Admittance vs. Drain Current 10 VDS=10V pulsed 10 VDS=10V pulsed Fig.8 Typical Transfer Characteristics 1 Forward Transfer Admittance Yfs [S] 1 Drain Currnt : ID [A] Ta=125°C Ta=75°C Ta=25°C Ta=-25°C Ta=125°C Ta=75°C Ta=25°C Ta=-25°C 0.1 0.1 0.01 0.01 0.01 0.001 0.1 1 10 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 Drain Current : ID [A] Gate-Source Voltage : VGS [V] Fig.9 Source Current vs. Source-Drain Voltage 10 VGS=0V pulsed Static Drain-Source On-State Resistance RDS(on) [mΩ] Fig.10 Static Drain-Source On-State Resistance vs. Gate-Source Voltage 300 Ta=25°C pulsed 250 Source Current : Is [A] 1 Ta=125°C Ta=75°C Ta=25°C Ta=-25°C 0.1 200 ID=2.5A ID=1.25A 150 100 50 0.01 0.0 0.5 1.0 1.5 Source-Drain Voltage : VSD [V] 0 0 2 4 6 8 10 Gate-Source Voltage : VGS [V] Fig.11 Switching Characteristics 1000 VDD≒25V VGS=10V RG=10Ω Ta=25°C Pulsed td(off) 12 Ta=25°C VDD=25V ID=2.5A Pulsed Fig.12 Dynamic Input Characteristics 100 Gate-Source Voltage : VGS [V] tf 10 Switching Time : t [ns] 8 6 10 tr td(on) 4 2 1 0.01 0.1 1 10 0 0 2 4 6 8 Total Gate Charge : Qg [nC] Drain Current : ID [A] www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 4/6 2011.09 - Rev.A RSR025N05 　 Data Sheet Fig.13 Typical Capacitance vs. Drain-Source Voltage 10000 Ta=25°C f=1MHz VGS=0V 1000 Drain Current : ID[ A ] Capacitance : C [pF] 10 100 Fig.14 Maximum Safe Operating Area Operation in this area is limited by RDS(on) (VGS = 10V) PW = 100μs 1 PW = 1ms PW = 10ms 0.1 100 Ciss Coss 10 Crss Ta=25°C Single Pulse Mounted on a ceramic board. (30mm × 30mm × 0.8mm) 0.1 1 10 DC Operation 100 1 0.01 0.1 1 10 100 Drain-Source Voltage : VDS [V] 0.01 Drain-Source Voltage : VDS [ V ] Fig.15 Normalized Transient Thermal Resistance v.s. Pulse Width 10 Normalized Transient Thermal Resistance : r（t） Ta=25°C Single Pulse 1 0.1 0.01 Mounted on a ceramic board. (30mm × 30mm × 0.8mm) Rth(ch-a)=125°C/W Rth(ch-a)(t)=r(t)×Rth(ch-a) 0.001 0.0001 0.001 0.01 0.1 1 10 100 1000 Pulse width : Pw (s) www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 5/6 2011.09 - Rev.A RSR025N05  Measurement circuits 　 Data Sheet Pulse width VGS ID RL D.U.T. RG VDD VDS VGS VDS 50% 10% 10% 90% td(on) ton tr 90% 50% 10% 90% td(off) toff tf Fig.1-1 Switching Time Measurement Circuit Fig.1-2 Switching Waveforms VG VGS ID RL IG(Const.) D.U.T. VDD VDS Qg VGS Qgs Qgd Charge Fig.2-1 Gate Charge Measurement Circuit Fig.2-2 Gate Charge Waveform www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 6/6 2011.09 - Rev.A Notice Notes Thank you for your accessing to ROHM product informations. More detail product informations and catalogs are available, please contact us. ROHM Customer Support System http://www.rohm.com/contact/ www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. R1120A