RSS090N03FU6TB

RSS090N03 Transistors Switching (30V, 9A) RSS090N03 zExternal dimensions (Unit : mm) zFeatures 1) Low on-resistance. 2) Built-in G-S Protection Diode. 3) Small and Surface Mount Package (SOP8). SOP8 5.0±0.2 (5) (1) (4) Each lead has same dimensions zEquivalent circuit zAbsolute maximum ratings (Ta = 25°C) Symbol Limits Unit Drain-Source Voltage Parameter VDSS 30 V Gate-Source Voltage V Source Current (Body Diode) 0.2±0.1 0.4±0.1 0.1 1.27 zStructure Silicon N-channel MOS FET Drain Current Max.1.75 1.5±0.1 0.15 0.5±0.1 6.0±0.3 3.9±0.15 (8) zApplication Power switching, DC/DC converter. VGSS 20 Continuous ID ±9.0 A Pulsed IDP ±36 A Continuous Is 1.6 A Pulsed Total Power Dissipation Isp 6.4 A PD 2 W Channel Temperature Tch 150 °C Storage Temperature Tstg −55 to +150 °C (8) (7) (6) (5) (8) (7) (6) ∗2 ∗1 (5) ∗1 (1) (2) (3) (4) ∗1 (1) ∗2 (2) (3) ∗1 ESD Protection Diode. ∗2 Body Diode. (4) (1) (2) (3) (4) (5) (6) (7) (8) Source Source Source Gate Drain Drain Drain Drain ∗ A protection diode is included between the gate and the source terminals to protect the diode against static electricity when the product is in use.Use a protection circuit when the fixed voltage are exceeded. ∗1 Pw≤10µs, Duty cycle≤1% ∗2 Mounted on a ceramic board. zThermal resistance (Ta = 25°C) Parameter Channel to Ambient Symbol Limits Unit Rth (ch-a) 62.5 °C / W ∗ ∗ Mounted on a ceramic board. 1/3 RSS090N03 Transistors zElectrical characteristics (Ta = 25°C) Parameter Gate-Source Leakage Drain-Source Breakdown Voltage Symbol Min. Typ. Max. Unit IGSS − − 10 µA VGS=20V, VDS=0V V (BR)DSS 30 − − V ID=1mA, VGS=0V Test Conditions IDSS − − 1 µA VDS=30V, VGS=0V Gate Threshold Voltage VGS (th) 1.0 − 2.5 V VDS=10V, ID=1mA − 11 15 Static Drain-Source On-State Resistance RDS (on)∗ − 15 22 − 17 24 Forward Transfer Admittance l Yfs l ∗ 6.0 − − S ID=9A, VDS=10V Input Capacitance Ciss − 810 − pF VDS=10V Output Capacitance Coss − 225 − pF VGS=0V Reverse Transfer Capacitance Crss − 160 − pF f=1MHz td(on) ∗ − 10 − ns ID=4.5A, VDD 15V tr ∗ − 13 − ns VGS=10V td(off) ∗ − 46 − ns RL=3.33Ω tf ∗ − 15 − ns RGS=10Ω Qg ∗ − 11 15 nC VDD=15V Qgs ∗ Qgd ∗ − 2.5 − nC VGS=5V − 4.5 − nC ID=9A Zero Gate Voltage Drain Current Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Gate Charge Gate-Source Charge Gate-Drain Charge ID=9A, VGS=10V mΩ ID=9A, VGS=4.5V ID=9A, VGS=4V ∗Pulsed zBody diode characteristics (Source-Drain Characteristics) (Ta = 25°C) Parameter Forward Voltage Symbol VSD ∗ Min. Typ. Max. Unit − − 1.2 V Test Conditions Is=6.4A, VGS=0V ∗Pulsed 2/3 RSS090N03 Transistors zElectrical characteristic curves 10000 Ciss 1000 Coss Crss 100 tf 1000 8 Ta=25°C VDD=15V VGS=10V RG=10Ω Pulsed td(off) 100 td(on) 10 tr 0.1 1 10 1 0.01 100 0.1 0.1 Ta=125°C 75°C 25°C −25°C 2.5 3.0 3.5 ID=4.5A 0 0 10 1 DRAIN CURRENT : I D(A) Fig.7 Static Drain-Source On-State Resistance vs. Drain Current (1) 10 100 4 6 8 10 12 14 8 10 12 VGS=0V Pulsed Ta=−25°C 25°C 75°C 125°C 10 1 0.1 16 0 0.5 1.5 1.0 GATE-SOURCE VOLTAGE : VGS (V) SOURCE-DRAIN VOLTAGE : VSD(A) Fig.5 Static Drain-Source On-State Resistance vs. Gate-Source Voltage Fig.6 Source-Current vs. Source-Drain Voltage VGS=4.5V Pulsed 10000 VGS=4V Pulsed 1000 Ta=125°C 75°C 25°C −25°C 10 1 0.1 6 0.01 2 1000 Ta=125°C 75°C 25°C −25°C 4 100 Ta=25 C pulsed 10000 STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS(on) (mΩ) STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS(on) (mΩ) VGS=10V Pulsed 1000 1 0.1 2 Fig.3 Dynamic Input Characteristics 50 Fig.4 Typical Transfer Characteristics 100 0 0 TOTAL GATE CHANGE: Qg (nC) ID=9A GATE - SOURCE VOLTAGE : VGS(V) 10000 1 SOURCE CURRENT : Is (A) STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS(on) (mΩ) DREIN CURRENT : ID(A) 1 2.0 2 100 10 100 10 1.5 3 Fig.2 Switching Characteristics Fig.1 Typical Capacitance vs. Drain-Source Voltage VDS=10V 0.001 Pulsed 0.0 0.5 1.0 4 DRAIN CURRENT : I D (A) DRAIN-SOURCE VOLTAGE : VDS (V) 0.01 1 5 STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS(on) (mΩ) 10 0.01 Ta=25 C 7 VDD=15V ID=9A 6 RG=10Ω Pulsed GATE-SOURCE VOLTAGE: VGS (V) Ta=25°C f=1MHz VGS=0V SWITCHING TIME : t (ns) CAPACITANCE : C (pF) 10000 1 10 DRAIN CURRENT : I D(A) Fig.8 Static Drain-Source On-State Resistance vs. Drain Current (2) 100 Ta=125°C 75°C 25°C −25°C 10 1 0.1 1 10 DRAIN CURRENT : I D(A) Fig.9 Static Drain-Source On-State Resistance vs. Drain Current (3) 3/3 Appendix Notes No technical content pages of this document may be reproduced in any form or transmitted by any means without prior permission of ROHM CO.,LTD. The contents described herein are subject to change without notice. The specifications for the product described in this document are for reference only. Upon actual use, therefore, please request that specifications to be separately delivered. Application circuit diagrams and circuit constants contained herein are shown as examples of standard use and operation. Please pay careful attention to the peripheral conditions when designing circuits and deciding upon circuit constants in the set. Any data, including, but not limited to application circuit diagrams information, described herein are intended only as illustrations of such devices and not as the specifications for such devices. ROHM CO.,LTD. disclaims any warranty that any use of such devices shall be free from infringement of any third party's intellectual property rights or other proprietary rights, and further, assumes no liability of whatsoever nature in the event of any such infringement, or arising from or connected with or related to the use of such devices. Upon the sale of any such devices, other than for buyer's right to use such devices itself, resell or otherwise dispose of the same, no express or implied right or license to practice or commercially exploit any intellectual property rights or other proprietary rights owned or controlled by ROHM CO., LTD. is granted to any such buyer. Products listed in this document use silicon as a basic material. Products listed in this document are no antiradiation design. The products listed in this document are designed to be used with ordinary electronic equipment or devices (such as audio visual equipment, office-automation equipment, communications devices, electrical appliances and electronic toys). Should you intend to use these products with equipment or devices which require an extremely high level of reliability and the malfunction of with would directly endanger human life (such as medical instruments, transportation equipment, aerospace machinery, nuclear-reactor controllers, fuel controllers and other safety devices), please be sure to consult with our sales representative in advance. About Export Control Order in Japan Products described herein are the objects of controlled goods in Annex 1 (Item 16) of Export Trade Control Order in Japan. In case of export from Japan, please confirm if it applies to "objective" criteria or an "informed" (by MITI clause) on the basis of "catch all controls for Non-Proliferation of Weapons of Mass Destruction. Appendix1-Rev1.0