RSS130N03
Transistors
Switching (30V, 13A)
RSS130N03
Features 1) Low on-resistance. 2) Built-in G-S Protection Diode. 3) Small and Surface Mount Package (SOP8). External dimensions (Unit : mm)
SOP8
(8)
5.0±0.2
(5)
6.0±0.3 3.9±0.15
1.5±0.1 0.15
1.27
0.4±0.1 0.1 Each lead has same dimensions
Structure Silicon N-channel MOS FET
Absolute maximum ratings (Ta = 25°C)
Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Source Current (Body Diode) Pulsed Continuous Pulsed Symbol VDSS VGSS ID IDP Is Isp PD Tch Tstg Limits 30 20 ±13 ±52 1.6 6.4 2 150 −55 to +150 Unit V V A A A A W
∗1 ∗2 ∗1
Equivalent circuit
(8) (7) (6) (5) (8) (7) (6) (5)
∗2
Max.1.75
Application Power switching, DC/DC converter.
0.5±0.1
(1) (4)
0.2±0.1
∗1
(2) (3) (4)
(1) (2) (3) (4)
Total Power Dissipation Channel Temperature Storage Temperature
∗1 Pw≤10µs, Duty cycle≤1% ∗2 Mounted on a ceramic board.
(1)
°C °C
∗1 ESD Protection Diode. ∗2 Body Diode.
(1) (2) (3) (4) (5) (6) (7) (8)
Source Source Source Gate Drain Drain Drain Drain
∗ A protection diode is included between the gate and the source terminals to protect the diode against static electricity when the product is in use.Use a protection circuit when the fixed voltage are exceeded.
Thermal resistance (Ta = 25°C)
Parameter Channel to Ambient
∗ Mounted on a ceramic board.
Symbol Rth (ch-a)
Limits 62.5
Unit
°C / W
∗
1/3
RSS130N03
Transistors
Electrical characteristics (Ta = 25°C)
Parameter Gate-Source Leakage Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate Threshold Voltage Static Drain-Source On-State Resistance Forward Transfer Admittance Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Gate Charge Gate-Source Charge Gate-Drain Charge
∗Pulsed
Symbol
IGSS V (BR)DSS IDSS VGS (th) RDS (on)∗ l Yfs l ∗ Ciss Coss Crss td(on) ∗ tr ∗ td(off) ∗ tf ∗ Qg ∗ Qgs ∗ Qgd ∗
Min.
− 30 − 1.0 − − − 11 − − − − − − − − − −
Typ.
− − − − 5.9 7.4 7.9 − 2000 605 320 13 30 88 55 25 4.7 9.4
Max.
10 − 1 2.5 8.1 10.3 11.0 − − − − − − − − 35 − −
Unit
µA V µA V mΩ
Test Conditions VGS=20V, VDS=0V ID=1mA, VGS=0V VDS=30V, VGS=0V VDS=10V, ID=1mA ID=13A, VGS=10V ID=13A, VGS=4.5V ID=13A, VGS=4V ID=13A, VDS=10V VDS=10V VGS=0V f=1MHz ID=6.5A, VDD 15V VGS=10V RL=2.31Ω RGS=10Ω VDD=15V VGS=5V ID=13A
S pF pF pF ns ns ns ns nC nC nC
Body diode characteristics (Source-Drain Characteristics) (Ta = 25°C)
Parameter Forward Voltage
∗Pulsed
Symbol VSD ∗
Min. −
Typ. −
Max. 1.2
Unit V
Test Conditions Is=6.4A, VGS=0V
2/3
RSS130N03
Transistors
Electrical characteristic curves
10000 Ciss
CAPACITANCE : C (pF)
GATE-SOURCE VOLTAGE: VGS (V)
Ta=25°C f=1MHz VGS=0V
Coss
10000
tf
SWITCHING TIME : t (ns)
1000
Ta=25°C VDD=15V VGS=10V RG=10Ω Pulsed
8 7 6 5 4 3 2 1 0 0 5 10 15
1000 Crss
Ta=25 C VDD=15V ID=13A RG=10Ω Pulsed
td(off)
100
tr
100
10
td(on)
10 0.01
0.1
1
10
100
1 0.01
0.1
1
10
100
20
25
DRAIN-SOURCE VOLTAGE : VDS (V)
DRAIN CURRENT : I D (A)
TOTAL GATE CHANGE: Qg (nC)
Fig.1 Typical Capacitance vs. Drain-Source Voltage
Fig.2 Switching Characteristics
Fig.3 Dynamic Input Characteristics
100
STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS(on) (mΩ)
100
Ta=25 C pulsed
SOURCE CURRENT : Is (A)
100
VGS=0V Pulsed Ta=−25°C 25°C 75°C 125°C
DREIN CURRENT : ID(A)
10 Ta=125°C 75°C 25°C −25°C
10
ID=13A
1
50 ID=6.5A
1
0.1
0.1
0.01 VDS=10V Pulsed 0 0.5 1.0 1.5 2.0 2.5 3.0
0.001
0 0
2
4
0.01
6
8
10
12
0
0.5
1.0
1.5
GATE - SOURCE VOLTAGE : VGS(V)
GATE-SOURCE VOLTAGE : VGS (V)
SOURCE-DRAIN VOLTAGE : VSD(A)
Fig.4 Typical Transfer Characteristics
Fig.5 Static Drain-Source On-State Resistance vs. Gate-Source Voltage
Fig.6 Source-Current vs. Source-Drain Voltage
100
STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS(on) (mΩ)
STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS(on) (mΩ)
Ta=125°C 75°C 25°C −25°C
Ta=125°C 75°C 25°C −25°C
STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS(on) (mΩ)
VGS=10V Pulsed
100
VGS=4.5V Pulsed
100 Ta=125°C 75°C 25°C −25°C
VGS=4V Pulsed
10
10
10
1 0.1
1
10
100
1 0.1
1
10
100
1 0.1
1
10
100
DRAIN CURRENT : I D(A)
DRAIN CURRENT : I D(A)
DRAIN CURRENT : I D(A)
Fig.7 Static Drain-Source On-State Resistance vs. Drain Current (1)
Fig.7 Static Drain-Source On-State Resistance vs. Drain Current (2)
Fig.7 Static Drain-Source On-State Resistance vs. Drain Current (3)
3/3
Appendix
Notes
No technical content pages of this document may be reproduced in any form or transmitted by any means without prior permission of ROHM CO.,LTD. The contents described herein are subject to change without notice. The specifications for the product described in this document are for reference only. Upon actual use, therefore, please request that specifications to be separately delivered. Application circuit diagrams and circuit constants contained herein are shown as examples of standard use and operation. Please pay careful attention to the peripheral conditions when designing circuits and deciding upon circuit constants in the set. Any data, including, but not limited to application circuit diagrams information, described herein are intended only as illustrations of such devices and not as the specifications for such devices. ROHM CO.,LTD. disclaims any warranty that any use of such devices shall be free from infringement of any third party's intellectual property rights or other proprietary rights, and further, assumes no liability of whatsoever nature in the event of any such infringement, or arising from or connected with or related to the use of such devices. Upon the sale of any such devices, other than for buyer's right to use such devices itself, resell or otherwise dispose of the same, no express or implied right or license to practice or commercially exploit any intellectual property rights or other proprietary rights owned or controlled by ROHM CO., LTD. is granted to any such buyer. Products listed in this document use silicon as a basic material. Products listed in this document are no antiradiation design.
The products listed in this document are designed to be used with ordinary electronic equipment or devices (such as audio visual equipment, office-automation equipment, communications devices, electrical appliances and electronic toys). Should you intend to use these products with equipment or devices which require an extremely high level of reliability and the malfunction of with would directly endanger human life (such as medical instruments, transportation equipment, aerospace machinery, nuclear-reactor controllers, fuel controllers and other safety devices), please be sure to consult with our sales representative in advance. About Export Control Order in Japan Products described herein are the objects of controlled goods in Annex 1 (Item 16) of Export Trade Control Order in Japan. In case of export from Japan, please confirm if it applies to "objective" criteria or an "informed" (by MITI clause) on the basis of "catch all controls for Non-Proliferation of Weapons of Mass Destruction.
Appendix1-Rev1.0
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