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RSU002P03T106

RSU002P03T106

  • 厂商:

    ROHM(罗姆)

  • 封装:

    UMT3

  • 描述:

    表面贴装型 P 通道 30 V 250mA(Ta) 200mW(Ta) UMT3

  • 数据手册
  • 价格&库存
RSU002P03T106 数据手册
RSU002P03   4V Dirve Pch MOSFET    Datasheet l Outline RDS(on)(Max.) 1.4Ω ID ±0.2A PD 0.2W             UMT3     or -30V   e N co ew m m D es en ig de ns d f VDSS                             l Inner circuit l Features 1) Low on-resistance. 2) 4V drive. 3) Lead Free/RoHS Compliant. l Packaging specifications Packing l Application Switching Type Embossed Tape Reel size (mm) 180 Tape width (mm) 8 Basic ordering unit (pcs) 3000 Taping code T106 Marking WP R l Absolute maximum ratings (Ta = 25°C) Parameter Symbol Value Unit VDSS -30 V ID ±0.2 A ID,pulse*1 ±0.4 A Gate - Source voltage VGSS ±20 V Power dissipation PD*2 0.2 W Tj 150 ℃ Tstg -55 to +150 ℃ ot Drain - Source voltage Continuous drain current N Pulsed drain current Junction temperature Range of storage temperature                                                l Thermal resistance Parameter junction - ambient Symbol Value Unit Rth(ch-a)*2 625 ℃/W                                                                                           www.rohm.com © 2014 ROHM Co., Ltd. All rights reserved. 1/7 20131001 - Rev.003                RSU002P03          Datasheet l Electrical characteristics (T a = 25°C) Drain - Source breakdown voltage Symbol Conditions V(BR)DSS VGS = 0V, ID = -1mA Values Min. Typ. Max. -30 - - Zero gate voltage drain current IDSS VDS = -30V, VGS = 0V - Gate - Source leakage current IGSS VGS = ±20V, VDS = 0V - VGS(th) VDS = -10V, ID = -1mA VGS = -10V, ID = -0.2A Static drain - source on - state resistance -1 μA - ±10 μA -1.0 - -2.5 V - 0.9 1.4 RDS(on)*3 VGS = -4.5V, ID = -0.15A - 1.4 2.1 VGS = -4.0V, ID = -0.15A - 1.6 2.4 0.2 - - Transconductance gfs*3 VDS = -10V, ID = -0.15A Input capacitance Ciss VGS = 0V - 30 - Output capacitance Coss VDS = -10V - 4 - Reverse transfer capacitance Crss f = 1MHz - 5 - VDD ⋍ -15V, VGS = -10V - 8 - tr*3 ID = 0.15A - 5 - td(off)*3 RL = 100Ω - 30 - tf*3 RG = 10Ω - 40 - Turn - on delay time Rise time Turn - off delay time Fall time V - e N co ew m m D es en ig de ns d f Gate threshold voltage Unit or Parameter td(on)*3 Ω S pF ns R l Body diode electirical characteristics (Source-Drain) (Ta = 25°C) ot Parameter VSD*3 Conditions VGS = 0V, IS = -0.1A Values Min. Typ. Max. - - -1.2 Unit V N Forward voltage Symbol *1 Pw ≤ 10μs, Duty cycle ≤ 1% *2 Each teminal mounted on a recommended land *3 Pulsed                                             www.rohm.com © 2014 ROHM Co., Ltd. All rights reserved. 2/7                                              20131001 - Rev.003        RSU002P03          Datasheet l Electrical characteristic curves Fig.2 Switching Characteristics e N co ew m m D es en ig de ns d f or Fig.1 Typical Capacitance vs. Drain  Source Voltage Fig.4 Typical Transfer Characteristics N ot R Fig.3 Dynamic Input Characteristics                                                                                             www.rohm.com © 2014 ROHM Co., Ltd. All rights reserved. 3/7 20131001 - Rev.003        RSU002P03          Datasheet l Electrical characteristic curves Fig.6 Reverse Drain Current vs. SourceDrain Voltage e N co ew m m D es en ig de ns d f or Fig.5 Static Drain - Source On - State  Resistance vs. Gate Source Voltage Fig.8 Static Drain - Source On - State  Resistance vs. Drain Current (II) N ot R Fig.7 Static Drain - Source On - State  Resistance vs. Drain Current (I)                                                                                             www.rohm.com © 2014 ROHM Co., Ltd. All rights reserved. 4/7 20131001 - Rev.003        RSU002P03          Datasheet l Electrical characteristic curves Fig.10 Static Drain - Source On - State  Resistance vs. Drain Current (IV) N ot R e N co ew m m D es en ig de ns d f or Fig.9 Static Drain - Source On - State  Resistance vs. Drain Current (III)                                                                                             www.rohm.com © 2014 ROHM Co., Ltd. All rights reserved. 5/7 20131001 - Rev.003        RSU002P03          Datasheet l Measurement circuits Fig.1-2 Switching Waveforms N ot R e N co ew m m D es en ig de ns d f or Fig.1-1 Switching Time Measurement Circuit                 www.rohm.com © 2014 ROHM Co., Ltd. All rights reserved. 6/7 20131001 - Rev.003        RSU002P03          Datasheet N ot R e N co ew m m D es en ig de ns d f or l Dimensions                                                                                             www.rohm.com © 2014 ROHM Co., Ltd. All rights reserved. 7/7 20131001 - Rev.003 N R e N co ew m m D es en ig de ns d f ot or
RSU002P03T106 价格&库存

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RSU002P03T106
  •  国内价格
  • 1+0.57530
  • 200+0.37180
  • 1500+0.32340
  • 3000+0.28600

库存:1

RSU002P03T106
    •  国内价格 香港价格
    • 1+2.463241+0.30810
    • 100+1.85387100+0.23188
    • 300+1.28741300+0.16103
    • 500+1.17583500+0.14707
    • 1000+1.081431000+0.13527
    • 4000+1.021354000+0.12775
    • 5000+1.021355000+0.12775

    库存:3000

    RSU002P03T106
    •  国内价格 香港价格
    • 3000+0.796943000+0.09968
    • 6000+0.784516000+0.09813
    • 12000+0.7712012000+0.09646
    • 15000+0.7676515000+0.09602
    • 45000+0.7419145000+0.09280

    库存:0

    RSU002P03T106
      •  国内价格 香港价格
      • 1+2.463241+0.30810
      • 100+1.85387100+0.23188
      • 300+1.28741300+0.16103
      • 500+1.17583500+0.14707
      • 1000+1.081431000+0.13527
      • 4000+1.021354000+0.12775
      • 5000+1.021355000+0.12775

      库存:476