RSU002P03
4V Dirve Pch MOSFET
Datasheet
l Outline
RDS(on)(Max.)
1.4Ω
ID
±0.2A
PD
0.2W
UMT3
or
-30V
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VDSS
l Inner circuit
l Features
1) Low on-resistance.
2) 4V drive.
3) Lead Free/RoHS Compliant.
l Packaging specifications
Packing
l Application
Switching
Type
Embossed
Tape
Reel size (mm)
180
Tape width (mm)
8
Basic ordering unit (pcs)
3000
Taping code
T106
Marking
WP
R
l Absolute maximum ratings (Ta = 25°C)
Parameter
Symbol
Value
Unit
VDSS
-30
V
ID
±0.2
A
ID,pulse*1
±0.4
A
Gate - Source voltage
VGSS
±20
V
Power dissipation
PD*2
0.2
W
Tj
150
℃
Tstg
-55 to +150
℃
ot
Drain - Source voltage
Continuous drain current
N
Pulsed drain current
Junction temperature
Range of storage temperature
l Thermal resistance
Parameter
junction - ambient
Symbol
Value
Unit
Rth(ch-a)*2
625
℃/W
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© 2014 ROHM Co., Ltd. All rights reserved.
1/7
20131001 - Rev.003
RSU002P03
Datasheet
l Electrical characteristics (T a = 25°C)
Drain - Source breakdown
voltage
Symbol
Conditions
V(BR)DSS VGS = 0V, ID = -1mA
Values
Min.
Typ.
Max.
-30
-
-
Zero gate voltage
drain current
IDSS
VDS = -30V, VGS = 0V
-
Gate - Source leakage current
IGSS
VGS = ±20V, VDS = 0V
-
VGS(th)
VDS = -10V, ID = -1mA
VGS = -10V, ID = -0.2A
Static drain - source
on - state resistance
-1
μA
-
±10
μA
-1.0
-
-2.5
V
-
0.9
1.4
RDS(on)*3 VGS = -4.5V, ID = -0.15A
-
1.4
2.1
VGS = -4.0V, ID = -0.15A
-
1.6
2.4
0.2
-
-
Transconductance
gfs*3
VDS = -10V, ID = -0.15A
Input capacitance
Ciss
VGS = 0V
-
30
-
Output capacitance
Coss
VDS = -10V
-
4
-
Reverse transfer capacitance
Crss
f = 1MHz
-
5
-
VDD ⋍ -15V, VGS = -10V
-
8
-
tr*3
ID = 0.15A
-
5
-
td(off)*3
RL = 100Ω
-
30
-
tf*3
RG = 10Ω
-
40
-
Turn - on delay time
Rise time
Turn - off delay time
Fall time
V
-
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Gate threshold voltage
Unit
or
Parameter
td(on)*3
Ω
S
pF
ns
R
l Body diode electirical characteristics (Source-Drain) (Ta = 25°C)
ot
Parameter
VSD*3
Conditions
VGS = 0V, IS = -0.1A
Values
Min.
Typ.
Max.
-
-
-1.2
Unit
V
N
Forward voltage
Symbol
*1 Pw ≤ 10μs, Duty cycle ≤ 1%
*2 Each teminal mounted on a recommended land
*3 Pulsed
www.rohm.com
© 2014 ROHM Co., Ltd. All rights reserved.
2/7
20131001 - Rev.003
RSU002P03
Datasheet
l Electrical characteristic curves
Fig.2 Switching Characteristics
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Fig.1 Typical Capacitance vs. Drain Source Voltage
Fig.4 Typical Transfer Characteristics
N
ot
R
Fig.3 Dynamic Input Characteristics
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© 2014 ROHM Co., Ltd. All rights reserved.
3/7
20131001 - Rev.003
RSU002P03
Datasheet
l Electrical characteristic curves
Fig.6 Reverse Drain Current vs. SourceDrain Voltage
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Fig.5 Static Drain - Source On - State
Resistance vs. Gate Source Voltage
Fig.8 Static Drain - Source On - State
Resistance vs. Drain Current (II)
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ot
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Fig.7 Static Drain - Source On - State
Resistance vs. Drain Current (I)
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© 2014 ROHM Co., Ltd. All rights reserved.
4/7
20131001 - Rev.003
RSU002P03
Datasheet
l Electrical characteristic curves
Fig.10 Static Drain - Source On - State
Resistance vs. Drain Current (IV)
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Fig.9 Static Drain - Source On - State
Resistance vs. Drain Current (III)
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© 2014 ROHM Co., Ltd. All rights reserved.
5/7
20131001 - Rev.003
RSU002P03
Datasheet
l Measurement circuits
Fig.1-2 Switching Waveforms
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Fig.1-1 Switching Time Measurement Circuit
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© 2014 ROHM Co., Ltd. All rights reserved.
6/7
20131001 - Rev.003
RSU002P03
Datasheet
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l Dimensions
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© 2014 ROHM Co., Ltd. All rights reserved.
7/7
20131001 - Rev.003
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- 国内价格 香港价格
- 1+2.463241+0.30810
- 100+1.85387100+0.23188
- 300+1.28741300+0.16103
- 500+1.17583500+0.14707
- 1000+1.081431000+0.13527
- 4000+1.021354000+0.12775
- 5000+1.021355000+0.12775