RSX058BGE2STL

RSX058BGE2S Schottky Barrier Diode Data sheet ● Outline VR 200 V Io 3 A IFSM 50 A ● Features ● Inner Circuit High reliability Power mold type Ultra Low IR ● Application ● Packaging Specifications Packing Embossed Tape Reel Size(mm) 330 Taping Width(mm) 16 Quantity(pcs) 2500 Taping Code TL Marking SX058BM2S Switching power supply Freewheel diode Reverse polarity protection ● Structure Silicon epitaxial planar ● Absolute Maximum Ratings (Tc=25ºC unless otherwise specified) Parameter Symbol Conditions Limits Unit Repetitive peak reverse voltage V RM Duty≦0.5 200 V Reverse voltage VR Reverse direct voltage 200 V Average rectified forward current Io 60Hz half sin waveform，resistive load， Tc=169℃ Max. 3 A IFSM 60Hz half sin waveform， non-repetitive，Ta=25℃ 50 A Tj - 175 ℃ Tstg - -55 ～ 175 ℃ Peak forward surge current Junction temperature(1) Storage temperature Note(1) To avoid occurrence of thermal runaway ， actual board is to be designed to fulfill dPd/dTj