RSX1001T3_11

Data Sheet Schottky barrier diode RSX1001T3 Applications Switching power supply Dimensions (Unit : mm) Structure Features 1) Cathode common type. (TO-220) 2) Low IR 3) High reliability Construction Silicon epitaxial planer (1) (2) (3) Absolute maximum ratings (Ta=25°C) Parameter Reverse voltage (repetitive peak) Reverse voltage (DC) Average rectified forward current (*1) Forward current surge peak (60Hz / 1cyc) (*1) Junction temperature Storage temperature Symbol VRM VR Io IFSM Tj Tstg Limits 30 30 10 150 150 40 to 150 Unit V V A A C C (*1)Business frequencies, Rating of R-load, 1/2 Io per diode, Tc=132C Electrical characteristic (Ta=25°C) Parameter Forward voltage Reverse current Reverse recovery time Symbol VF IR jc Min. - Typ. - Max. 0.45 500 2.5 Unit V A C/W Conditions IF=5A VR=30V junction to case www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 1/3 2011.05 - Rev.B RSX1001T3 Electrical characteristic curves 10 Ta=150℃ 1000000 　 Data Sheet Ta=150℃ 10000 f=1MHz REVERSE CURRENT:IR(uA) FORWARD CURRENT:I F(A) 1 Ta=25℃ Ta=75℃ Ta=-25℃ 10000 1000 Ta=75℃ Ta=25℃ 100 10 1 Ta=-25℃ 0.1 CAPACITANCE BETWEEN TERMINALS:Ct(pF) 30 Ta=125℃ 100000 Ta=125℃ 1000 100 0.01 0 100 200 300 400 500 600 FORWARD VOLTAGE : VF(mV) VF-IF CHARACTERISTICS 10 0 5 10 15 20 25 0 5 10 15 20 25 30 REVERSE VOLTAGE : VR(V) VR-IR CHARACTERISTICS REVERSE VOLTAGE : VR(V) VR-Ct CHARACTERISTICS 420 FORWARD VOLTAGE:V F(mV) REVERSE CURRENT:IR(uA) CAPACITANCE BETWEEN TERMINALS:Ct(pF) 410 Ta=25℃ IF=5A n=30pcs 500 450 400 350 300 250 200 150 100 50 0 AVE:148.6uA 1100 Ta=25℃ VR=30V n=30pcs 1080 1060 1040 1020 1000 980 960 940 920 900 IR DISPERSION MAP Ct DISPERSION MAP AVE:1006.7pF Ta=25℃ f=1MHz VR=0V n=10pcs 400 390 380 AVE:402.0mV 370 VF DISPERSION MAP 300 250 200 150 100 50 AVE:235.0A 0 IFSM DISPERSION MAP Ifsm 1cyc 8.3ms 30 1000 Ta=25℃ IF=0.5A IR=1A Irr=0.25*IR n=10pcs Ifsm REVERSE RECOVERY TIME:trr(ns) PEAK SURGE FORWARD CURRENT:I FSM(A) PEAK SURGE FORWARD CURRENT:I FSM(A) 25 20 15 10 5 AVE:17.2ns 0 trr DISPERSION MAP 8.3ms 100 8.3ms 1cyc 10 1 1 10 NUMBER OF CYCLES IFSM-CYCLE CHARACTERISTICS 100 1000 100 Ifsm t 10 IM=100mA TRANSIENT THAERMAL IMPEDANCE:Rth (℃/W) IF=5A 8 DC Sin(θ=180) D=1/2 PEAK SURGE FORWARD CURRENT:I FSM(A) 10 300us Rth(j-a) FORWARD POWER DISSIPATION:Pf(W) 1ms time 6 100 4 1 Rth(j-c) 2 10 1 10 TIME:t(ms) IFSM-t CHARACTERISTICS 100 0.1 0.001 0 0.01 0.1 1 10 100 1000 0 5 10 15 20 TIME:t(s) Rth-t CHARACTERISTICS AVERAGE RECTIFIED FORWARD CURRENT : Io(A) Io-Pf CHARACTERISTICS www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 2/3 2011.05 - Rev.B RSX1001T3 　 Data Sheet 10 30 0A Io 30 0A Io t 20 DC T VR D=t/T VR=15V Tj=150℃ AVERAGE RECTIFIED FORWARD CURRENT:Io(A) REVERSE POWER DISSIPATION:PR (W) t 20 DC D=1/2 10 Sin(θ=180) T 6 DC 4 Sin(θ=180) 2 D=1/2 D=t/T VR=15V Tj=150℃ AVERAGE RECTIFIED FORWARD CURRENT:Io(A) 8 0V VR 0V D=1/2 10 Sin(θ=180) 0 0 0 5 10 15 20 25 30 REVERSE VOLTAGE : VR(V) VR-PR CHARACTERISTICS 0 0 25 50 75 100 125 150 AMBIENT TEMPERATURE:Ta(℃) Derating Curve"(Io-Ta) 0 25 50 75 100 125 150 CASE TEMPARATURE:Tc(℃) Derating Curve"(Io-Tc) 30 No break at 30kV 25 No break at 30kV ELECTROSTATIC DISCHARGE TEST ESD(KV) 20 15 10 5 0 C=200pF R=0 ESD DISPERSION MAP C=100pF R=1.5k www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 3/3 2011.05 - Rev.B Notice Notes Thank you for your accessing to ROHM product informations. More detail product informations and catalogs are available, please contact us. ROHM Customer Support System http://www.rohm.com/contact/ www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. R1120A