RSX101M-30

RSX101M-30 Diodes Schottky barrier diode RSX101M-30 Applications General rectification Dimensions (Unit : mm) 1.6±0.1 0.1±0.1 　　　 0.05 Land size figure (Unit : mm) 1.2 0.85 2.6±0.1 3.5±0.2 Features 1) Small power mold type. (PMDU) 2) Low VF, Low IR. 3) High reliability. P MDU Structure Construction Silicon epitaxial planar 0.9±0.1 ROHM : PMDU JEDEC :SOD-123 Manufacture Date 0.8±0.1 Taping specifications (Unit : mm) 4.0±0.1 2.0±0.05 φ1.55±0.05 1.75±0.1 0.25±0.05 3.5±0.05 8.0±0.2 1.81±0.1 4.0±0.1 φ1.0±0.1 3.71±0.1 1.5MAX Absolute maximum ratings (Ta=25°C) Param eter Revers e voltage (repetitive peak) Revers e voltage (DC) Average rectified forward current Forward current s aurge peak (60Hz・ 1cyc ） Junction tem perature Storage tem perature S ym bol VRM VR Io IFSM Tj Ts tg Lim its 30 30 1 45 150 -40 to +150 Unit V V A A ℃ ℃ (*1)Mounted on epoxy board. 180°Half s ine wave Electrical characteristics (Ta=25°C) Parameter Forward voltage Reverse current Capacitance between terminals ESD breakdown voltage Symbol VF IR Ct ESD Min. Typ. 0.35 90 60.0 12.0 Max. 0.39 200 Unit V µA pF kV Conditions IF=1A VR=30V VR=10V , f=1MHz C=200pF ,R=0Ω Rev.C 3.05 ① 1/3 RSX101M-30 Diodes Electrical characteristic curves (Ta=25°C) 1 Ta=125℃ REVERSE CURRENT:IR(uA) FORWARD CURRENT:IF(A) Ta=150℃ 0.1 Ta=75℃ Ta=25℃ Ta=-25℃ 0.01 1000000 100000 10000 1000 1000 Ta=150℃ CAPACITANCE BETWEEN TERMINALS:Ct(pF) f=1MHz Ta=125℃ Ta=75℃ Ta=25℃ 100 100 10 1 0.1 Ta=-25℃ 10 0.001 0 100 200 300 400 FORWARD VOLTAGE：VF(mV) VF-IF CHARACTERISTICS 500 1 0 5 10 15 20 25 REVERSE VOLTAGE：VR(V) VR-IR CHARACTERISTICS 30 0 5 10 15 20 25 REVERSE VOLTAGE:VR(V) VR-Ct CHARACTERISTICS 30 380 FORWARD VOLTAGE:VF(mV) 370 360 350 340 AVE:349.9mV 330 Ta=25℃ IF=1A n=30pcs 1000 900 REVERSE CURRENT:IR(uA) 800 700 600 500 400 300 200 100 0 VF DISPERSION MAP IR DISPERSION MAP AVE:103.1uA Ta=25℃ VR=30V n=30pcs 350 340 CAPACITANCE BETWEEN TERMINALS:Ct(pF) 330 320 310 300 290 280 270 260 250 Ct DISPERSION MAP AVE:300.1pF Ta=25℃ f=1MHz VR=0V n=10pcs 200 RESERVE RECOVERY TIME:trr(ns) PEAK SURGE FORWARD CURRENT:IFSM(A) 30 25 20 15 10 5 0 IFSM DISPERSION MAP trr DISPERSION MAP 100 PEAK SURGE FORWARD CURRENT:IFSM(A) 150 Ifsm 8.3ms 1cyc Ta=25℃ IF=0.5A IR=1A Irr=0.25*IR n=10pcs 90 80 70 60 50 40 30 20 10 0 1 10 NUMBER OF CYCLES IFSM-CYCLE CHARACTERISTICS 100 Ifsm 8.3ms 8.3ms 1cyc 100 50 AVE:66.0A 0 AVE:8.30ns 100 PEAK SURGE FORWARD CURRENT:IFSM(A) 90 80 70 60 50 40 30 20 10 0 1 10 TIME:t(ms) IFSM-t CHARACTERISTICS 100 Ifsm t 1000 Mounted on epoxy board IM=10mA IF=0.5A 1 Rth(j-a) TRANSIENT THAERMAL IMPEDANCE:Rth (℃/W) 100 1ms time 0.8 FORWARD POWER DISSIPATION:Pf(W) Rth(j-c) 300us 0.6 0.4 0.2 0 Sin(θ＝180) D=1/2 DC 10 1 0.1 0.001 0.01 0.1 1 10 100 1000 0 TIME:t(s) Rth-t CHARACTERISTICS 0.5 1 1.5 AVERAGE RECTIFIED FORWARD CURRENT：Io(A) Io-Pf CHARACTERISTICS 2 Rev.C 2/3 RSX101M-30 Diodes 2 3 AVERAGE RECTIFIED FORWARD CURRENT:Io(A) 2.5 2 1.5 D=1/2 1 0.5 0 0 25 50 75 100 125 AMBIENT TEMPERATURE:Ta(℃) Derating Curveﾞ(Io-Ta) 150 Sin(θ＝180) 0A 0V DC Io t T VR D=t/T VR=15V Tj=150℃ AVERAGE RECTIFIED FORWARD CURRENT:Io(A) 3 2.5 2 DC T 1.5 1 0.5 Sin(θ＝180) 0 0 25 50 75 100 125 CASE TEMPARATURE:Tc(℃) Derating Curveﾞ(Io-Tc) 150 D=1/2 0A 0V Io t VR D=t/T VR=15V Tj=150℃ REVERSE POWER DISSIPATION:PR (W) 1.5 1 D=1/2 DC 0.5 0 0 Sin(θ＝180) 10 20 REVERSE VOLTAGE:VR(V) VR-PR CHARACTERISTICS 30 30 No break at 30kV 25 ELECTROSTATIC DISCHARGE TEST ESD(KV) 20 15 10 5 0 C=200pF R=0Ω C=100pF R=1.5kΩ AVE:10.8kV ESD DISPERSION MAP Rev.C 3/3 Appendix Notes No technical content pages of this document may be reproduced in any form or transmitted by any means without prior permission of ROHM CO.,LTD. The contents described herein are subject to change without notice. The specifications for the product described in this document are for reference only. Upon actual use, therefore, please request that specifications to be separately delivered. Application circuit diagrams and circuit constants contained herein are shown as examples of standard use and operation. Please pay careful attention to the peripheral conditions when designing circuits and deciding upon circuit constants in the set. Any data, including, but not limited to application circuit diagrams information, described herein are intended only as illustrations of such devices and not as the specifications for such devices. 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Should you intend to use these products with equipment or devices which require an extremely high level of reliability and the malfunction of which would directly endanger human life (such as medical instruments, transportation equipment, aerospace machinery, nuclear-reactor controllers, fuel controllers and other safety devices), please be sure to consult with our sales representative in advance. It is our top priority to supply products with the utmost quality and reliability. However, there is always a chance of failure due to unexpected factors. Therefore, please take into account the derating characteristics and allow for sufficient safety features, such as extra margin, anti-flammability, and fail-safe measures when designing in order to prevent possible accidents that may result in bodily harm or fire caused by component failure. ROHM cannot be held responsible for any damages arising from the use of the products under conditions out of the range of the specifications or due to non-compliance with the NOTES specified in this catalog. Thank you for your accessing to ROHM product informations. More detail product informations and catalogs are available, please contact your nearest sales office. ROHM Customer Support System www.rohm.com Copyright © 2008 ROHM CO.,LTD. THE AMERICAS / EUROPE / ASIA / JAPAN Contact us : webmaster@ rohm.co. jp 21 Saiin Mizosaki-cho, Ukyo-ku, Kyoto 615-8585, Japan TEL : +81-75-311-2121 FAX : +81-75-315-0172 Appendix1-Rev2.0