RSX101VA-30_11

Data Sheet Schottky barrier Diode RSX101VA-30  Applications General rectification  Dimensions (Unit : mm) 0.17±0.1 　　 0.05 1.3±0.05  Land size figure (Unit : mm) 1.1 1.9±0.1 3) High reliability. 2.5±0.2 TUMD2  Construction Silicon epitaxial planar 0.8±0.05  Structure ROHM : TUMD2 　　　 0.1 dot (year week factory) + day 0.6±0.2  Taping specifications (Unit : mm) 4.0±0.1 2.0±0.05 1.75±0.1 φ1.55±0.1 　　　　　 0 0.25±0.05 3.5±0.05 8.0±0.2 1.43±0.05 4.0±0.1 φ1.0±0.2 　　　　　0 2.75 2.8±0.05 0.9±0.08  Absolute maximum ratings (Ta=25°C) Parameter Symbol VRM Reverse voltage (repetitive peak) VR Reverse voltage (DC) Average rectified forward current Io IFSM Forward current surge peak (60Hz 1cyc) ・ Junction temperature Tj Storage temperature Tstg Limits 30 30 1 5 150 40 to 150 Unit V V A A °C °C  Electrical characteristics (Ta=25°C) Parameter Symbol Forward voltage Reverse current VF IR1 IR2 Min. - Typ. 0.43 15 40 Max. 0.47 40 200 Unit V μA μA IF=1A VR=5V VR=30V Conditions www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 1/3 2011.05 - Rev.B 0.8 0.5  Features 1) Small mold type. (TUMD2) 2) Low VF 2.0 RSX101VA-30 Data Sheet 1000 Ta=150℃ Ta=125℃ 1000000 Ta=150℃ 100000 Ta=125℃ 1000 f=1MHz FORWARD CURRENT:IF(mA) REVERSE CURRENT:IR(uA) 100 Ta=75℃ Ta=-25℃ 10 Ta=25℃ 10000 Ta=75℃ 1000 100 10 1 0.1 0 5 10 15 20 25 REVERSE VOLTAGE：VR(V) VR-IR CHARACTERISTICS 30 Ta=25℃ Ta=-25℃ CAPACITANCE BETWEEN TERMINALS:Ct(pF) 100 10 1 0 100 200 300 400 500 600 FORWARD VOLTAGE：VF(mV) VF-IF CHARACTERISTICS 1 0 10 20 30 REVERSE VOLTAGE:VR(V) VR-Ct CHARACTERISTICS 450 500 200 Ta=25℃ VR=30V n=30pcs 190 180 170 160 150 140 130 120 110 100 IR DISPERSION MAP Ct DISPERSION MAP AVE:159.7pF Ta=25℃ f=1MHz VR=0V n=10pcs FORWARD VOLTAGE:VF(mV) REVERSE CURRENT:IR(uA) 440 430 420 410 AVE:423.3mV 400 VF DISPERSION MAP 350 300 250 200 150 100 50 0 AVE:36.59uA 30 30 25 20 15 10 5 0 IFSM DISRESION MAP trr DISPERSION MAP CAPACITANCE BETWEEN TERMINALS:Ct(pF) Ta=25℃ IF=1A n=30pcs 450 400 30 PEAK SURGE FORWARD CURRENT:IFSM(A) 25 20 15 10 5 0 PEAK SURGE FORWARD CURRENT:IFSM(A) Ifsm 1cyc 8.3ms REVERSE RECOVERY TIME:trr(ns) Ta=25℃ IF=0.5A IR=1A Irr=0.25*IR n=10pcs 25 20 15 10 5 0 1 Ifsm 8.3ms 8.3ms 1cyc AVE:15.6A AVE:10.4ns 10 NUMBER OF CYCLES IFSM-CYCLE CHARACTERISTICS 100 30 1000 Mounted on epoxy board IM=10mA IF=0.2A 1 0.8 25 20 15 10 5 0 1 Ifsm t TRANSIENT THAERMAL IMPEDANCE:Rth (℃/W) PEAK SURGE FORWARD CURRENT:IFSM(A) 1ms time FORWARD POWER DISSIPATION:Pf(W) Rth(j-a) D=1/2 0.6 Sin(θ＝180) 0.4 0.2 0 DC 300us 100 Rth(j-c) 10 TIME:t(ms) IFSM-t CHARACTERISTICS 100 10 0.001 0.01 1 10 100 TIME:t(s) Rth-t CHARACTERISTICS 0.1 1000 0 0.5 1 1.5 AVERAGE RECTIFIED FORWARD CURRENT：Io(A) Io-Pf CHARACTERISTICS 2 www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 2/3 2011.05 - Rev.B RSX101VA-30 Data Sheet 3 2.5 3 2.5 2 1.5 1 0.5 Sin(θ＝180) 0 0 10 20 30 0 25 50 75 100 125 150 REVERSE VOLTAGE:VR(V) VR-PR CHARACTERISTICS AMBIENT TEMPERATURE:Ta(℃) Derating Curveﾞ(Io-Ta) DC D=1/2 T 0A 0V Io t VR D=t/T VR=15V Tj=150℃ 3 AVERAGE RECTIFIED FORWARD CURRENT:Io(A) AVERAGE RECTIFIED FORWARD CURRENT:Io(A) 2.5 2 1.5 1 0.5 Sin(θ＝180) 0 0 DC 0A 0V Io t T VR D=t/T VR=15V Tj=150℃ REVERSE POWER DISSIPATION:PR (W) 2 1.5 1 DC 0.5 0 Sin(θ＝180) D=1/2 D=1/2 25 50 75 100 125 CASE TEMPARATURE:Tc(℃) Derating Curveﾞ(Io-Tc) 150 www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 3/3 2011.05 - Rev.B Notice Notes Thank you for your accessing to ROHM product informations. More detail product informations and catalogs are available, please contact us. ROHM Customer Support System http://www.rohm.com/contact/ www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. R1120A