RSX201VA-30

Data Sheet Schottky Barrier Diode RSX201VA-30 Applications General rectification Dimensions (Unit : mm) 0.17±0.1 　　 0.05 1 .3±0.05 Land size figure (Unit : mm) 1.1 1.9±0.1 3)High reliability 2.5±0.2 TUMD2 Construction Silicon epitaxial planer 0.8±0.05 Structure 0.6±0.2 　　　 0.1 ROHM : TUMD2 dot (year week factory) Taping dimensions (Unit : mm) 1.75 ±0.1 φ1.5 ±0.1 0 0.25 ±0.05 4 .0 ±0.1 2.0 ±0.05 3.5 ±0.05 8.0 ±0.2 2.75 1.43 ±0.05 4.0 ±0.1 φ1.0 ±0.2 0 2.8 ±0.05 0.9 ±0.08 Absolute maximum ratings (Ta=25°C) Parameter Symbol VRM Reverse voltage (repetitive) VR Reverse voltage (DC) Average rectified forward current Io (On the Almina substrate) Average rectified forward current Io (On the Glass epoxy substrate) IFSM Forward current surge peak （60Hz・1cyc） Junction temperature Tj Storage temperature Tstg Electrical characteristics (Ta=25°C) Parameter Symbol Forward voltage Reverse current VF1 VF2 IR1 IR2 Limits 30 30 1.5 1.0 8 125 - 40 to +125 Unit V V A A A °C °C Min. - Typ. 0.36 0.40 15 70 Max. 0.42 0.46 60 300 Unit V V μA μA IF=1A IF=1.5A VR=5V VR=30V Conditions www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 1/4 2011.11 - Rev.A 0.8 0. Features 1)Small mold type (TUMD2) 2)Low VF& Low IR 2.0 RSX201VA-30 　 Data Sheet 10 Tj=150°C 1000 Tj=125°C 100 FORWARD CURRENT:IF(A) 1 REVERSE CURRENT:IR(mA) Tj=125°C Tj=75°C 0.1 Tj=25°C 10 Tj=75°C 1 Tj=25°C 0.1 0.01 Tj=−25°C 0.01 0.001 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 FORWARD VOLTAGE：VF(V) VF-IF CHARACTERISTICS 0.001 0 10 20 REVERSE VOLTAGE：VR(V) VR-IR CHARACTERISTICS 30 1000 f=1MHz 0.4 0.39 FORWARD VOLTAGE:VF(V) 0.38 0.37 0.36 0.35 0.34 0.33 0.32 0.31 AVE:0.367V IF=1.0A Tj=25°C CAPACITANCE BETWEEN TERMINALS:Ct(pF) 100 10 0 5 10 15 20 25 30 REVERSE VOLTAGE:VR(V) VR-Ct CHARACTERISTICS 0.3 VF DISPERSION MAP 1000 VR=30V Tj=25°C REVERSE CURRENT:IR(µA) CAPACITANCE BETWEEN TERMINALS:Ct(pF) 280 f=1MHz VR=0V 270 AVE:76.2µA 100 260 250 AVE:255.1pF 240 10 IR DISPERSION MAP 230 Ct DISPERSION MAP www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 2/4 2011.11 - Rev.A RSX201VA-30 　 Data Sheet 50 30 IF=0.5A IR=1A Irr=0.25×IR Tj=25°C 20 REVERSE RECOVERY TIME:trr(ns) PEAK SURGE FORWARD CURRENT:IFSM(A) 40 IFSM 8.3ms 1cyc 25 30 15 AVE:7.8ns 10 20 AVE:28.1A 10 5 0 IFSM DISPERSION MAP 0 trr DISPERSION MAP 1000 IFSM PEAK SURGE FORWARD CURRENT:IFSM(A) 8.3ms 100 8.3ms PEAK SURGE FORWARD CURRENT:IFSM(A) 100 1cyc 10 10 IFSM t 1 1 10 NUMBER OF CYCLES IFSM-CYCLE CHARACTERISTICS 100 1 1 10 TIME:t(ms) IFSM-t CHARACTERISTICS 100 1000 On glass-epoxy substrate TRANSIENT THERMAL IMPEDANCE:Rth (°C/W) Rth(j-a) 0.002 0.0015 Rth(j-c) REVERSE POWER DISSIPATION:PR (W) 100 0.001 D.C. 10 0.0005 D=1/2 1 0.001 Sin(θ＝180) 0.01 0.1 1 10 100 1000 0 0 10 20 30 REVERSE VOLTAGE:VR(V) VR-PR CHARACTERISTICS TIME:t(s) Rth-t CHARACTERISTICS www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 3/4 2011.11 - Rev.A RSX201VA-30 　 Data Sheet 3 0A 0V AVERAGE RECTIFIED FORWARD CURRENT:Io(A) t 2 D.C. D=1/2 1 Sin(θ＝180) T Io VR D=t/T VR=15V Tj=125°C AVERAGE RECTIFIED FORWARD CURRENT:Io(A) 3 0A 0V D.C. t T 2 D=1/2 Io VR D=t/T VR=15V Tj=125°C Sin(θ＝180) 1 0 0 25 50 75 100 125 AMBIENT TEMPERATURE:Ta(°C) DERATING CURVE(Io-Ta) 0 0 25 50 75 100 125 CASE TEMPERATURE:Tc(°C) DERATING CURVE(Io-Tc) 30 No break at 30kV 25 ELECTROSTATIC DISCHARGE TEST ESD(KV) 20 15 10 AVE：11.4kV 5 0 C=200pF R=0Ω C=100pF R=1.5kΩ ESD DISPERSION MAP www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 4/4 2011.11 - Rev.A Notice Notes Thank you for your accessing to ROHM product informations. More detail product informations and catalogs are available, please contact us. ROHM Customer Support System http://www.rohm.com/contact/ www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. R1120A