RSX205L-30

Data Sheet Schottky Barrier Diode RSX205L-30 lApplications General rectification lDimensions (Unit : mm) lLand size figure (Unit : mm) 2.0 2.6±0.2 lFeatures 1)Small power mold type.(PMDS) 2)High reliability. 3)Low IR , Low VF. 2.0 ① ② 0 .1±0.02 　　　 0.1 5.0±0.3 5 8 4.5±0.2 1.2±0.3 PMDS lConstruction Silicon epitaxial planer 1.5±0.2 2.0±0.2 lStructure ROHM : PMDS JEDEC : SOD-106 ① ② Manufacture Date lTaping dimensions (Unit : mm) 4.0±0.1 2.0±0.05 φ 1.55±0.05 0.3 5.5±0.05 1.75±0.1 φ 1.55 2.9±0.1 4 .0±0.1 2.8MAX lAbsolute maximum ratings (Ta=25C) Parameter Symbol VRM Reverse voltage (repetitive) VR Reverse voltage (DC) Average rectified forward current (*1) Io IFSM Forward current surge peak (60Hz・1cyc) Junction temperature Tj Storage temperature Tstg (*1)On the Glass epoxy board, Tc=95°C MAX. lElectrical characteristics (Ta=25C) Parameter Symbol VF Forward voltage Reverse current IR Limits 30 30 2.0 60 150 -40 to +150 Unit V V A A C C Min. - Typ. - Max. 0.49 200 Unit V μA IF=2.0A VR=30V 5.3±0.1 0.05 　 9.5±0.1 Conditions www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 1/4 2011.10 - Rev.A 12±0.2 4.2 RSX205L-30 　 Data Sheet 1 Ta=125°C Ta=150°C FORWARD CURRENT:IF(A) 0.1 Ta=25°C 1000000 100000 REVERSE CURRENT:IR(mA) Ta=75°C Ta=150°C Ta=125°C 10000 Ta=75°C 1000 Ta=25°C 100 10 1 0.1 0.01 Ta=-25°C Ta=-25°C 0.001 0 100 200 300 400 500 FORWARD VOLTAGE：VF(mV) VF-IF CHARACTERISTICS 0 5 10 15 20 25 30 REVERSE VOLTAGE：VR(V) VR-IR CHARACTERISTICS 1000 f=1MHz 460 IF=2A FORWARD VOLTAGE:VF(mV) 450 CAPACITANCE BETWEEN TERMINALS:Ct(pF) 100 440 430 AVE:444.1mV 10 420 1 0 5 10 15 20 25 30 REVERSE VOLTAGE:VR(V) VR-Ct CHARACTERISTICS 410 VF DISPERSION MAP 1000 900 REVERSE CURRENT:IR(mA) 800 700 600 500 400 300 200 100 0 IR DISPERSION MAP AVE:103.1mA VR=30V 350 340 CAPACITANCE BETWEEN TERMINALS:Ct(pF) 330 320 310 300 290 AVE:300.1pF 280 270 260 250 Ct DISPERSION MAP f=1MHz VR=0V www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 2/4 2011.10 - Rev.A RSX205L-30 　 Data Sheet 200 30 IF=0.5A IR=1A Irr=0.25*IR REVERSE RECOVERY TIME:trr(ns) PEAK SURGE FORWARD CURRENT:IFSM(A) IFSM 150 8.3ms 1cyc 25 20 100 15 10 50 AVE:66.0A 5 AVE:8.30ns 0 IFSM DISPERSION MAP 0 trr DISPERSION MAP 100 90 PEAK SURGE FORWARD CURRENT:IFSM(A) 80 8.3ms 70 60 50 40 30 20 10 0 1 10 NUMBER OF CYCLES IFSM-CYCLE CHARACTERISTICS 100 8.3ms 1cyc. IFSM PEAK SURGE FORWARD CURRENT:IFSM(A) 100 90 80 70 60 50 40 30 20 10 0 1 10 TIME:t(ms) IFSM-t CHARACTERISTICS 100 IFSM time 1000 On glass-epoxy substrate TRANSIENT THERMAL IMPEDANCE:Rth (°C/W) Rth(j-a) 100 FORWARD POWER DISSIPATION:Pf(W) 1 0.8 D=1/2 0.6 Rth(j-c) 10 0.4 Sin(θ＝180) 0.2 DC 1 0.1 0.001 0 0.01 1 10 TIME:t(s) Rth-t CHARACTERISTICS 0.1 100 1000 0 0.5 1 1.5 2 AVERAGE RECTIFIED FORWARD CURRENT：Io(A) Io-Pf CHARACTERISTICS www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 3/4 2011.10 - Rev.A RSX205L-30 　 Data Sheet 2 5 4.5 4 AVERAGE RECTIFIED FORWARD CURRENT:Io(A) D.C. 3.5 3 D=1/2 2.5 2 1.5 1 0.5 Sin(θ＝180) Io 0A 0V VR t T D=t/T VR=15V Tj=150°C 1.5 REVERSE POWER DISSIPATION:PR (W) D.C. 1 Sin(θ＝180) D=1/2 0.5 0 0 10 20 30 REVERSE VOLTAGE:VR(V) VR-PR CHARACTERISTICS 0 0 25 50 75 100 125 150 CASE TEMPERATURE:Tc(°C) DERATING CURVE(Io-Tc) 30 No break at 30kV 25 ELECTROSTATIC DISCHARGE TEST ESD(KV) 20 15 10 AVE:10.8kV 5 0 C=200pF R=0Ω C=100pF R=1.5kΩ ESD DISPERSION MAP www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 4/4 2011.10 - Rev.A Notice Notes Thank you for your accessing to ROHM product informations. More detail product informations and catalogs are available, please contact us. ROHM Customer Support System http://www.rohm.com/contact/ www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. R1120A