RSX301LA-30_10

Schottky barrier diode RSX301LA-30 Applications General rectification Dimensions (Unit : mm)  Land size figure (Unit : mm) 2.0 Features 1) Small and Thin power mold type. (PMDT) 2) Low IR & Low VF 3) High reliability. 1.4 PMDＴ Construction Silicon epitaxial planer Structure Taping specifications (Unit : mm) Absolute maximum ratings (Ta=25C) Parameter Reverse voltage (repetitive peak) Reverse voltage (DC) Average rectified forward current Forward current saurge peak (60Hz / 1cyc） Junction temperature Storage temperature Symbol VRM VR Io IFSM Tj Tstg Limits 30 30 3 70 150 -40 to +150 Unit V V A A C C (*1)Tc=90C max Mounted on epoxy board. 180Half sine wave Electrical characteristics (Ta=25C) Parameter Forward voltage Reverse current 1.4 Symbol VF IR1 IR2 Min. - Typ. - Max. 0.42 90 200 Unit V μA μA Conditions IF=3.0A VR=15V VR=30V www.rohm.com ©2010 ROHM Co., Ltd. All rights reserved. 1/3 2010.04 - Rev.E 4.4 6 RSX301LA-30 Electrical characteristics curves 10 FORWARD CURRENT:IF(A) Ta=125℃ 1 Ta=150℃ Ta=25℃ Ta=-25℃ Ta=75℃ 1000000 REVERSE CURRENT:IR(uA) 100000 10000 1000 100 10 1 0 100 200 300 400 500 600 0 5 10 　 Data Sheet Ta=150℃ Ta=125℃ CAPACITANCE BETWEEN TERMINALS:Ct(pF) 1000 f=1MH Ta=75℃ Ta=25℃ 0.1 100 0.01 Ta=-25℃ 0.001 10 15 20 25 30 0 5 10 15 20 25 30 FORWARD VOLTAGE : VF(mV) VF-IF CHARACTERISTICS REVERSE VOLTAGE : VR(V) VR-IR CHARACTERISTICS REVERSE VOLTAGE:VR(V) VR-Ct CHARACTERISTICS 400 FORWARD VOLTAGE:VF(mV) 390 380 370 360 AVE:379.8mV 350 Ta=25℃ IF=3A n=30pcs 1000 900 REVERSE CURRENT:IR(uA) 800 700 600 500 400 300 200 100 0 AVE:86.89uA Ta=25℃ VR=30V n=30pcs 850 840 CAPACITANCE BETWEEN TERMINALS:Ct(pF) 830 820 810 800 790 780 770 760 750 AVE:800.8p Ta=25℃ f=1MHz VR=0V n=10pcs VF DISPERSION MAP IR DISPERSION MAP Ct DISPERSION MAP 200 RESERVE RECOVERY TIME:trr(ns) Ifsm PEAK SURGE FORWARD CURRENT:IFSM(A) 150 1cyc 8.3ms 30 PEAK SURGE FORWARD CURRENT:IFSM(A) 25 20 15 10 AVE:11.8ns 5 0 Ta=25℃ IF=0.5A IR=1A Irr=0.25*IR n=10pcs 300 250 200 150 100 50 0 1 10 100 Ifsm 8.3m 8.3m 1cyc 100 AVE:178.0 50 0 IFSM DISRESION MAP trr DISPERSION MAP NUMBER OF CYCLES IFSM-CYCLE CHARACTERISTICS 300 TRANSIENT THAERMAL IMPEDANCE:Rth (℃/W) 250 PEAK SURGE FORWARD CURRENT:IFSM(A) 200 150 100 50 0 1 10 TIME:t(ms) IFSM-t CHARACTERISTICS 100 Ifsm 1000 Mounted on epoxy board Rth(j-a) 3 t 100 Rth(j-c) FORWARD POWER DISSIPATION:Pf(W) 2 Sin(=180) 1 D=1/2 DC 10 IM=100mA IF=1A 1 1ms time 0.1 0.001 300us 0.1 10 1000 0 0 1 2 3 4 5 TIME:t(s) Rth-t CHARACTERISTICS AVERAGE RECTIFIED FORWARD CURRENT : Io(A) Io-Pf CHARACTERISTICS www.rohm.com ©2010 ROHM Co., Ltd. All rights reserved. 2/3 2010.04 - Rev.E RSX301LA-30 　 7 6 AVERAGE RECTIFIED FORWARD CURRENT:Io(A) 0A 0V Io t T DC Sin(θ=180) Data Sheet 0A 0V DC t T Io VR D=t/T VR=15V Tj=150℃ 5 4 REVERSE POWER DISSIPATION:PR (W) 3 2 1 0 0 10 20 Sin(θ=180) 30 D=1/2 7 6 AVERAGE RECTIFIED FORWARD CURRENT:Io(A) 5 4 3 2 1 0 0 25 50 75 Sin(θ=180) 5 4 3 2 1 0 0 25 50 75 100 D=1/2 VR D=t/T VR=15V Tj=150℃ DC D=1/2 125 150 100 125 150 REVERSE VOLTAGE : VR(V) VR-PR CHARACTERISTICS AMBIENT TEMPERATURE:Ta(℃) Derating Curve"(Io-Ta) CASE TEMPARATURE:Tc(℃) Derating Curve ﾞ(Io-Tc) 30 ELECTROSTATIC DISCHARGE TEST ESD(KV) 25 20 15 10 5 0 C=200pF R=0Ω C=100pF R=1.5kΩ No break at 30kV No break at 30kV ESD DISPERSION MAP www.rohm.com ©2010 ROHM Co., Ltd. All rights reserved. 3/3 2010.04 - Rev.E Notice Notes No copying or reproduction of this document, in part or in whole, is permitted without the consent of ROHM Co.,Ltd. The content specified herein is subject to change for improvement without notice. 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