RSX501L-20_11

Data Sheet Schottky barrier Diode RSX501L-20  Applications General rectification  Dimensions (Unit : mm)  Land size figure (Unit : mm) 2.0 2.0 2.6±0.2 3) High reliability. ① ② 0.1±0.02 　　　 0.1 5.0±0.3 5 7 4.5±0.2  Features 1) Small power mold type. (PMDS) 2) Low VF, Low IR. 1.2±0.3 PMDS  Construction Silicon epitaxial planar 1.5±0.2 2.0±0.2  Structure ROHM : PMDS JEDEC : SOD-106 ① ② Manufacture Date  Taping specifications (Unit : mm) 4.0±0.1 2.0±0.05 φ1.55±0.05 0.3 5.5±0.05 1.75±0.1 φ1.55 2.9±0.1 4.0±0.1 2.8MAX  Absolute maximum ratings (Ta=25°C) Parameter Symbol VRM Reverse voltage (repetitive peak) VR Reverse voltage (DC) Average rectified forward current Io IFSM Forward current surge peak (60Hz・1cyc)(*1) Junction temperature Tj Storage temperature Tstg Limits 25 20 5 70 125 40 to 125 Unit V V A A °C °C (*1)Tc=90°C max Mounted on epoxy board. 180°Half sine wave  Electrical characteristics (Ta=25°C) Parameter Forward voltage Reverse current Symbol VF IR Min. - Typ. - Max. 0.39 500 Unit V μA IF=3.0A VR=20V www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 1/3 5.3±0.1 　 0.05 9.5±0.1 Conditions 2011.05 - Rev.D 12±0.2 4.2 RSX501L-20 Data Sheet 10 Ta=125℃ Ta=75℃ 1000000 Ta=125℃ 100000 10000 1000 100 Ta=-25℃ 10 1 Ta=75℃ Ta=25℃ 1000 f=1MHz Ta=25℃ 0.1 Ta=-25℃ CAPACITANCE BETWEEN TERMINALS:Ct(pF) 1 REVERSE CURRENT:IR(uA) FORWARD CURRENT:IF(A) 100 0.01 0.001 0 100 200 300 400 500 600 FORWARD VOLTAGE：VF(mV) VF-IF CHARACTERISTICS 10 0 5 10 15 20 25 30 0 REVERSE VOLTAGE：VR(V) VR-IR CHARACTERISTICS 1050 5 10 15 20 REVERSE VOLTAGE:VR(V) VR-Ct CHARACTERISTICS 25 30 380 1000 Ta=25℃ IF=3A n=30pcs 900 Ta=25℃ VR=20V n=30pcs 1040 FORWARD VOLTAGE:VF(mV) REVERSE CURRENT:IR(uA) CAPACITANCE BETWEEN TERMINALS:Ct(pF) 370 800 700 600 500 400 300 200 100 AVE:196.8uA 1030 1020 1010 1000 990 980 970 960 950 AVE:997.4pF Ta=25℃ f=1MHz VR=0V n=10pcs 360 350 AVE:350.0mV 340 330 VF DISPERSION MAP 0 IR DISPERSION MAP Ct DISPERSION MAP 300 30 300 REVERSE RECOVERY TIME:trr(ns) PEAK SURGE FORWARD CURRENT:IFSM(A) PEAK SURGE FORWARD CURRENT:IFSM(A) 250 200 150 100 50 0 Ifsm 1cyc 8.3ms 25 20 15 10 5 0 Ta=25℃ IF=0.5A IR=1A Irr=0.25*IR n=10pcs 250 200 150 100 50 0 1 Ifsm 8.3ms 8.3ms 1cyc AVE:186.0A AVE:11.6ns IFSM DISRESION MAP 300 250 Ifsm t 200 150 100 50 0 1 10 TIME:t(ms) IFSM-t CHARACTERISTICS 100 1000 trr DISPERSION MAP 10 NUMBER OF CYCLES IFSM-CYCLE CHARACTERISTICS 100 5 Mounted on epoxy board TRANSIENT THAERMAL IMPEDANCE:Rth (℃/W) PEAK SURGE FORWARD CURRENT:IFSM(A) Rth(j-a) 100 4 D=1/2 FORWARD POWER DISSIPATION:Pf(W) 10 IM=100mA Rth(j-c) IF=1A 3 DC Sin(θ＝180) 2 1 1ms time 1 300us 0.1 0.001 0.01 0.1 1 10 100 1000 0 0 2 4 6 AVERAGE RECTIFIED FORWARD CURRENT：Io(A) Io-Pf CHARACTERISTICS 8 10 TIME:t(s) Rth-t CHARACTERISTICS www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 2/3 2011.05 - Rev.D RSX501L-20 Data Sheet 5 4 15 0A 0V 10 T DC 5 Sin(θ＝180) Io t 15 0A 0V 10 DC T Io t VR D=t/T VR=10V Tj=125℃ AVERAGE RECTIFIED FORWARD CURRENT:Io(A) 3 DC 2 1 D=1/2 AVERAGE RECTIFIED FORWARD CURRENT:Io(A) REVERSE POWER DISSIPATION:PR (W) VR D=t/T VR=10V Tj=125℃ D=1/2 5 Sin(θ＝180) Sin(θ＝180) 0 0 10 20 30 REVERSE VOLTAGE:VR(V) VR-PR C HARACTERISTICS 0 0 D=1/2 25 50 75 100 125 0 0 25 50 75 100 CASE TEMPARATURE:Tc(℃) Derating Curve(Io-Tc) 125 AMBIENT TEMPERATURE:Ta(℃) Derating Curveﾞ(Io-Ta) 30 No break at 30kV No break at 30kV ELECTROSTATIC DISCHARGE TEST ESD(KV) 25 20 15 10 5 0 C=200pF R=0Ω C=100pF R=1.5kΩ ESD DISPERSION MAP www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 3/3 2011.05 - Rev.D Notice Notes Thank you for your accessing to ROHM product informations. More detail product informations and catalogs are available, please contact us. ROHM Customer Support System http://www.rohm.com/contact/ www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. R1120A