RSX501LA-20_09

Schottky barrier diode RSX501LA-20 Applications General rectification Features 1) Small and Thin power mold type (PMDT) 2) High reliability. 3) Low IR Dimensions (Unit : mm) Land size figure (Unit : mm) 2.0 1.4 Structure Silicon epitaxial planar ROHM : PMDＴ PMDＴ Structure Taping dimensions (Unit : mm) 2.0±0.05 4.0±0.1 1.75±0.1 φ1.55±0.1 　　　　　 0 0.25±0.05 5.5±0.05 12.0±0.2 1.4 φ1.55±0.1 　　　　　 0 2.7±0.1 4.0±0.1 1.25±0.1 Absolute maximum ratings (Ta=25°C) Parameter Limits Symbol Reverse voltage (repetitive peak) 25 VRM Reverse voltage (DC) VR 20 Average rectified forward current (*1) 5.0 Io Forward current surge peak （60Hz・1cyc） 70 IFSM Junction temperature 125 Tj Storage temperature -40 to +125 Tstg (*1) Alumina substrate at the time of assemble, Tc=90℃ m ax. Unit V V A A ℃ ℃ Electrical characteristic (Ta=25°C) Parameter Forward voltage Reverse current 5.0±0.1 Symbol VF IR Min. - Typ. - Max. 0.39 500 Unit V µA Conditions IF=3.0A VR=20V www.rohm.com c ○ 2009 ROHM Co., Ltd. All rights reserved. 5.0±0.1 1/3 2009.10 - Rev.A 4.4 RSX501LA-20 Electrical characteristic curves 10 Ta=125℃ Ta=75℃ Data Sheet 1000000 Ta=125℃ 100000 REVERSE CURRENT:IR(uA) 1000 f=1MHz CAPACITANCE BETWEEN TERMINALS:Ct(pF) FORWARD CURRENT:IF(A) 1 Ta=25℃ 10000 1000 100 Ta=75℃ 0.1 Ta=-25℃ Ta=25℃ 100 0.01 Ta=-25℃ 10 1 0.001 0 100 200 300 400 500 600 FORWARD VOLTAGE：VF(mV) VF-IF CHARACTERISTICS 10 0 5 10 15 20 25 30 0 REVERSE VOLTAGE：VR(V) VR-IR CHARACTERISTICS 5 10 15 20 REVERSE VOLTAGE:VR(V) VR-Ct CHARACTERISTICS 25 30 380 FORWARD VOLTAGE:VF(mV) Ta=25℃ IF=3A n=30pcs 1000 900 REVERSE CURRENT:IR(uA) 800 700 600 500 400 300 200 100 AVE:196.8uA Ta=25℃ VR=20V n=30pcs 1050 1040 1030 Ta=25℃ f=1MHz VR=0V n=10pcs CAPACITANCE BETWEEN TERMINALS:Ct(pF) 370 1020 1010 1000 990 980 970 960 950 AVE:997.4pF 360 350 AVE:350.0mV 340 330 VF DISPERSION MAP 0 IR DISPERSION MAP Ct DISPERSION MAP 300 RESERVE RECOVERY TIME:trr(ns) PEAK SURGE FORWARD CURRENT:IFSM(A) 250 200 150 100 50 0 IFSM DISRESION MAP 300 250 PEAK SURGE FORWARD CURRENT:IFSM(A) 200 150 100 50 0 1 10 TIME:t(ms) IFSM-t CHARACTERISTICS 100 Ifsm t Ifsm 1cyc 8.3ms 30 25 20 15 10 5 0 trr DISPERSION MAP Ta=25℃ IF=0.5A IR=1A Irr=0.25*IR n=10pcs 300 250 200 150 100 50 0 1 10 NUMBER OF CYCLES IFSM-CYCLE CHARACTERISTICS 100 Ifsm 8.3ms 8.3ms 1cyc AVE:186.0A AVE:11.6ns 1000 Mounted on epoxy board PEAK SURGE FORWARD CURRENT:IFSM(A) 5 Rth(j-a) TRANSIENT THAERMAL IMPEDANCE:Rth (℃/W) 100 FORWARD POWER DISSIPATION:Pf(W) 4 D=1/2 DC Sin(θ＝180) 10 IM=100mA Rth(j-c) IF=1A 3 2 1 1ms time 1 300us 0.1 0.001 0.1 10 1000 0 0 2 4 6 AVERAGE RECTIFIED FORWARD CURRENT：Io(A) Io-Pf CHARACTERISTICS 8 10 TIME:t(s) Rth-t CHARACTERISTICS www.rohm.com c ○ 2009 ROHM Co., Ltd. All rights reserved. 2/3 2009.10 - Rev.A RSX501LA-20 Data Sheet 5 15 0A Io AVERAGE RECTIFIED FORWARD CURRENT:Io(A) t 10 T DC 5 Sin(θ＝180) VR D=t/T VR=10V Tj=125℃ 15 0A 0V t 10 DC T Io VR D=t/T VR=10V Tj=125℃ 4 AVERAGE RECTIFIED FORWARD CURRENT:Io(A) R EVERSE POWER DISSIPATION:P R (W) 0V 3 DC 2 D=1/2 D=1/2 5 Sin(θ＝180) 1 Sin(θ＝180) D=1/2 0 0 0 25 50 75 100 125 0 AMBIENT TEMPERATURE:Ta(℃) Derating Curveﾞ(Io-Ta) 25 50 75 CASE TEMPARATURE:Tc(℃) Derating Curve(Io-Tc) 100 125 0 0 10 20 30 REVERSE VOLTAGE:VR(V) VR-P R CHARACTERISTICS 30 No break at 30kV ELECTROSTATIC DDISCHARGE TEST ESD(KV) 25 20 15 10 5 0 C=200pF R=0Ω C=100pF R=1.5kΩ No break at 30kV ESD DISPERSION MAP www.rohm.com c ○ 2009 ROHM Co., Ltd. All rights reserved. 3/3 2009.10 - Rev.A Notice Notes No copying or reproduction of this document, in part or in whole, is permitted without the consent of ROHM Co.,Ltd. The content specified herein is subject to change for improvement without notice. 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