RSY160P05

RSY160P05 Transistors 4V Drive Pch MOSFET RSY160P05 Structure Silicon P-channel MOSFET Dimensions (Unit : mm) TCPT (2) Features 1) Low On-resistance. 2) Built-in G-S Protection Diode. 3) Same land pattern as CPT3 (D-PAK). (1) (3) Application Switching Packaging specifications Package Type RSY160P05 Code Basic ordering unit (pieces) Taping TL 2500 Equivalent circuit ∗1 ∗2 (1) (2) (3) (1) Gate (2) Drain (3) Source ∗1 ESD PROTECTION DIODE ∗2 BODY DIODE Absolute maximum ratings (Ta=25°C) Parameter Drain-source voltage Gate-source voltage Drain current Source current (Body diode) Continuous Pulsed Continuous Pulsed Symbol VDSS VGSS ID IDP ∗1 IS ISP ∗1 PD ∗2 Tch Tstg Limits −45 ±20 ±16 ±32 −16 −32 20 150 −55 to +150 Unit V V A A A A W °C °C Total power dissipation Channel temperature Range of Storage temperature ∗1 Pw≤10µs, Duty cycle≤1% ∗2 Tc=25°C Thermal resistance Parameter Channel to ambient ∗ Tc=25°C Symbol Rth (ch-c) ∗ Limits 6.25 Unit °C / W 1/5 RSY160P05 Transistors Electrical characteristics (Ta=25°C) Parameter Symbol Min. − IGSS Gate-source leakage Drain-source breakdown voltage V(BR) DSS −45 Zero gate voltage drain current − IDSS Gate threshold voltage VGS (th) −1.0 − Static drain-source on-state RDS (on) ∗ − resistance − Yfs ∗ 8.5 Forward transfer admittance − Ciss Input capacitance − Output capacitance Coss Reverse transfer capacitance − Crss td (on) ∗ Turn-on delay time − tr ∗ Rise time − td (off) ∗ Turn-off delay time − tf ∗ Fall time − Total gate charge − Qg ∗ Gate-source charge − Qgs ∗ Gate-drain charge − Qgd ∗ ∗Pulsed Typ. − − − − 35 45 50 − 2150 250 150 13 30 90 105 17.0 5.2 5.5 Max. ±10 − −1 −2.5 50 63 70 − − − − − − − − 25.5 − − Unit µA V µA V mΩ mΩ mΩ S pF pF pF ns ns ns ns nC nC nC Conditions VGS= ±20V, VDS=0V ID= −1mA, VGS=0V VDS= −45V, VGS=0V VDS= −10V, ID= −1mA ID= −16A, VGS= −10V ID= −8A, VGS= −4.5V ID= −8A, VGS= −4.0V VDS= −10V, ID= −8A VDS= −10V VGS=0V f=1MHz ID= −10A VDD −25V VGS= −10V RL=2.5Ω RG=10Ω VDD −25V ID= −10A VGS= −5V RL=2.5Ω RG=10Ω Body diode characteristics (Source-drain) (Ta=25°C) Parameter Forward voltage ∗Pulsed Symbol VSD ∗ Min. − Typ. − Max. −1.2 Unit V Conditions IS= −16A, VGS=0V 2/5 RSY160P05 Transistors Electrical characteristic curves 16 14 DRAIN CURRENT : -ID[A] 12 10 8 6 4 2 0 0 0.2 0.4 0.6 0.8 1 -3.0V VGS= -2.5V 16 Ta=25°C Pulsed DRAIN CURRENT : -ID[A] -10V -6.0V -4.5V -4.0V 14 12 10 8 6 4 2 0 0 2 4 6 8 10 -2.8V VGS= -2.5V -3.0V -10V -4.0V Ta=25°C Pulsed DRAIN CURRENT : -ID[A] 100 VDS= -10V Pulsed 10 Ta= 125°C Ta= 75°C Ta= 25°C Ta= - 25°C 1 0.1 0.01 1.0 2.0 3.0 4.0 DRAIN-SOURCE VOLTAGE : -VDS[V] Fig.1 Typical Output Characteristics(Ⅰ) DRAIN-SOURCE VOLTAGE : -VDS[V] Fig.2 Typical Output Characteristics(Ⅱ) GATE-SOURCE VOLTAGE : -VGS[V] Fig.3 Typical Transfer Characteristics STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS(ON)[m Ω] 1000 Ta=25°C Pulsed VGS= -4.0V VGS= -4.5V VGS= -10V 100 1000 STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS(ON)[m Ω] VGS= -10V Pulsed Ta=125°C Ta=75°C Ta=25°C Ta= -25°C 1000 STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS(ON)[m Ω] VGS= -4.5V Pulsed Ta=125°C Ta=75°C Ta=25°C Ta= -25°C 100 100 10 0.1 1 10 100 10 0.1 1 10 100 10 0.1 1 10 100 DRAIN-CURRENT : -ID[A] Fig.4 Static Drain-Source On-State Resistance vs. Drain Current(Ⅰ) DRAIN-CURRENT : -ID[A] Fig.5 Static Drain-Source On-State Resistance vs. Drain Current(Ⅱ) DRAIN-CURRENT : -ID[A] Fig.6 Static Drain-Source On-State Resistance vs. Drain Current(Ⅲ) STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS(ON)[m Ω] 1000 VGS= -4.0V Pulsed Ta=125°C Ta=75°C Ta=25°C Ta= -25°C 100 FORWARD TRANSFER ADMITTANCE : |Yfs| [S] REVERSE DRAIN CURRENT : -Is [A] VDS= -10V Pulsed 10 100 VGS=0V Pulsed 10 Ta=125°C Ta=75°C Ta=25°C Ta=-25°C 100 1 Ta= -25°C Ta=25°C Ta=75°C Ta=125°C 1 0.1 10 0.1 1 10 100 0 0.1 1 10 100 0.01 0 0.2 0.4 0.6 0.8 1 1.2 DRAIN-CURRENT : -ID[A] Fig.7 Static Drain-Source On-State Resistance vs. Drain Current(Ⅳ) DRAIN-CURRENT : -ID[A] Fig.8 Forward Transfer Admittance vs. Drain Current SOURCE-DRAIN VOLTAGE : -VSD [V] Fig.9 Reverse Drain Current vs. Sourse-Drain Voltage 3/5 RSY160P05 Transistors 200 STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS(ON)[m Ω] SWITCHING TIME : t [ns] 160 120 80 40 0 0 5 10 15 ID= -16A Ta=25°C Pulsed 10000 Ta=25°C VDD= -25V VGS= -10V RG=10Ω Pulsed 10 GATE-SOURCE VOLTAGE : -VGS [V] 8 6 4 2 0 0 5 10 15 20 25 30 Ta=25°C VDD= -25V ID= -10A RG=10Ω Pulsed 1000 tf td(off) 100 10 tr 1 0.01 0.1 1 10 100 td(on) ID= -8A GATE-SOURCE VOLTAGE : -VGS[V] Fig.10 Static Drain-Source On-State Resistance vs. Gate Source DRAIN-CURRENT : -ID[A] Fig.11 Switching Characteristics TOTAL GATE CHARGE : Qg [nC] Fig.12 Dynamic Input Characteristics 10000 Ciss CAPACITANCE : C [pF] 1000 100 Crss Coss Ta=25°C f=1MHz VGS=0V 0.01 0.1 1 10 100 10 GATE-SOURCE VOLTAGE : -VDS[V] Fig.13 Typical Capacitance vs. Drain-Source Voltage 4/5 RSY160P05 Transistors Measurement circuits Pulse Width VGS ID RL D.U.T. VDS VGS 10% 50% 10% 50% 90% 10% 90% td(off) toff tf RG VDD VDS 90% td(on) ton tr Fig.14 Switching Time Test Circuit Fig.15 Switching Time Waveforms VG VGS ID RL VDS VGS Qgs Qg IG (Const.) RG D.U.T. Qgd VDD Charge Fig.16 Gate Charge Test Circuit Fig.17 Gate Charge Waveform 5/5 Appendix Notes No copying or reproduction of this document, in part or in whole, is permitted without the consent of ROHM CO.,LTD. The content specified herein is subject to change for improvement without notice. The content specified herein is for the purpose of introducing ROHM's products (hereinafter "Products"). If you wish to use any such Product, please be sure to refer to the specifications, which can be obtained from ROHM upon request. Examples of application circuits, circuit constants and any other information contained herein illustrate the standard usage and operations of the Products. The peripheral conditions must be taken into account when designing circuits for mass production. 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