RSY500N04FRATL

Data Sheet 4V Drive Pch MOSFET RSD160P05 Structure Silicon P-channel MOSFET  Dimensions (Unit : mm) CPT3 6.5 5.1 or (SC-63) 2.3 0.65 0.9 (1)  Packaging specifications 2.3 (2) (3) 2.3 1.5 2.5 0.75 0.8Min. 0.9 e N co ew m m D es en ig de ns d f  Application Switching 5.5 Features 1) Low on-resistance. 2) Fast switching speed. 3) Drive circuits can be simple. 4) Parallel use is easy. 9.5 1.5 0.5 0.5 1.0  Inner circuit Package Type Code Basic ordering unit (pieces) RSD160P05 Taping TL 2500 ○ ∗1 ∗2 (1) (1) Gate (2) Drain (3) Source (2) (3) 1 ESD PROTECTION DIODE 2 BODY DIODE Absolute maximum ratings (Ta = 25°C) Parameter Drain-source voltage Gate-source voltage Unit 45 20 V V VGSS ID 16 A Pulsed Continuous IDP IS *1 32 16 A A Pulsed ISP PD Tch Tstg *1 32 20 A W 150 55 to 150 C C ot Source current (Body Diode) Limits VDSS Continuous R Drain current Symbol N Power dissipation Channel temperature Range of storage temperature *2 *1 Pw≤10s, Duty cycle≤1% *2 Tc=25C  Thermal resistance Parameter Channel to Case Symbol Limits Unit Rth (ch-c) * 6.25 C / W * T c=25C www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 1/6 2011.08 - Rev.A Data Sheet 　 RSD160P05 Electrical characteristics (Ta = 25°C) Parameter Gate-source leakage Symbol Min. Typ. Max. Unit IGSS - - 10 A Gate threshold voltage VGS=20V, VDS=0V 45 - - V ID=1mA, V GS=0V IDSS - - 1 A VDS=45V, VGS=0V VGS (th) 1.0 - 3.0 V - 35 50 ID=16A, VGS=10V - 45 63 m ID=8A, VGS=4.5V Drain-source breakdown voltage V(BR)DSS Zero gate voltage drain current Conditions VDS=10V, ID=1mA * RDS (on) - 50 70 Forward transfer admittance l Yfs l* 8.0 - - S ID=8A, VDS=10V Ciss - 2000 - pF VDS=10V ID=8A, VGS=4.0V e N co ew m m D es en ig de ns d f Input capacitance or Static drain-source on-state resistance Output capacitance Coss - 250 - pF VGS=0V Reverse transfer capacitance Crss - 140 - pF f=1MHz Turn-on delay time td(on) * - 13 - ns ID=8.0A, VDD 25V tr * - 22 - ns VGS=10V td(off) * - 90 - ns RL=3.1 tf * - 50 - ns RG=10 Total gate charge Qg * - 16.0 - nC VDD 25V Gate-source charge Qgs * Gate-drain charge Qgd * - 5.2 5.0 - nC nC ID=16A, VGS=5V Rise time Turn-off delay time Fall time *Pulsed Body diode characteristics (Source-Drain) (Ta = 25C) Parameter Forward Voltage Min. Typ. Max. Unit - - 1.2 V Conditions Is=16A, VGS=0V N ot R *Pulsed Symbol VSD * www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 2/6 2011.08 - Rev.A Data Sheet 　 RSD160P05 Electrical characteristic curves (Ta=25C) Fig.2 Typical Output Characteristics (Ⅱ) Fig.1 Typical Output Characteristics (Ⅰ) 16 8 7 VGS=-4.5V VGS=-4.0V 12 Drain Current : -ID [A] VGS=-3.2V 10 8 VGS=-3.0V 6 Ta=25°C pulsed 3 2 1 Ta=25°C pulsed 0 VGS=-2.8V 4 e N co ew m m D es en ig de ns d f 0 5 VGS=-2.8V 2 0.2 0.4 0.6 0.8 VGS=-2.5V 0 1 0 2 Drain-Source Voltage : -VDS [V] 1000 Static Drain-Source On-State Resistance RDS(on) [mΩ] Static Drain-Source On-State Resistance RDS(on) [mΩ] VGS=-4.0V VGS=-4.5V VGS=-10V 10 1 0.01 0.1 1 10 Ta=125°C Ta=75°C Ta=25°C Ta=-25°C 10 0.1 10 100 R Fig.6 Static Drain-Source On-State Resistance vs. Drain Current 1000 Static Drain-Source On-State Resistance RDS(on) [mΩ] VGS=-4V pulsed N ot Static Drain-Source On-State Resistance RDS(on) [mΩ] 1 Drain Current : -ID [A] VGS=-4.5V pulsed 100 Ta=125°C Ta=75°C Ta=25°C Ta=-25°C 10 0.1 10 100 1 0.01 100 Fig.5 Static Drain-Source On-State Resistance vs. Drain Current 1 0.01 8 VGS=-10V pulsed Drain Current : -ID [A] 1000 6 Fig.4 Static Drain-Source On-State Resistance vs. Drain Current Ta=25°C pulsed 100 4 Drain-Source Voltage : -VDS [V] Fig.3 Static Drain-Source On-State Resistance vs. Drain Current 1000 VGS=-3.0V 6 VGS=-3.8V 4 VGS=-4.0V or 14 Drain Current : -ID [A] VGS=-10.0V VGS=-10.0V 1 10 Ta=125°C Ta=75°C Ta=25°C Ta=-25°C 10 1 0.01 100 Drain Current : -ID [A] www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 100 0.1 1 10 100 Drain Current : -ID [A] 3/6 2011.08 - Rev.A Data Sheet 　 RSD160P05 Fig.8 Typical Transfer Characteristics Fig.7 Forward Transfer Admittance vs. Drain Current 100 100 VDS=-10V pulsed 10 1 Drain Currnt : -ID [A] Ta=125°C Ta=75°C Ta=25°C Ta=-25°C 1 0.1 or 10 0.01 Ta=125°C Ta=75°C Ta=25°C Ta=-25°C 0.001 e N co ew m m D es en ig de ns d f Forward Transfer Admittance Yfs [S] VDS=-10V pulsed 0.0001 0.1 0.01 0.1 1 10 0.00001 100 0.0 0.5 1.0 Drain Current : -ID [A] Source Current : -Is [A] 10 1 Static Drain-Source On-State Resistance RDS(on) [mΩ] VGS=0V pulsed Ta=125°C Ta=75°C Ta=25°C Ta=-25°C 0.1 3.0 3.5 0.0 0.5 1.0 300 ID=-16.0A 200 ID=-8.0A 100 0 1.5 0 2 4 R tf 12 14 16 18 20 Ta=25°C VDD=-25V ID=-16A Pulsed 8 td(off) td(on) 10 6 4 2 tr 0.1 10 10 VDD≒-25V VGS=-10V RG=10Ω Ta=25°C Pulsed 100 0.01 8 Fig.12 Dynamic Input Characteristics Gate-Source Voltage : -VGS [V] N ot 1000 6 Gate-Source Voltage : -VGS [V] Fig.11 Switching Characteristics 10000 Ta=25°C pulsed 400 Source-Drain Voltage : -VSD [V] Switching Time : t [ns] 2.5 500 100 1 2.0 Fig.10 Static Drain-Source On-State Resistance vs. Gate-Source Voltage FIg.9 Source Current vs. Source-Drain Voltage 0.01 1.5 Gate-Source Voltage : -VGS [V] 1 10 0 100 Drain Current : -ID [A] www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 0 5 10 15 20 25 30 35 40 Total Gate Charge : -Qg [nC] 4/6 2011.08 - Rev.A Data Sheet 　 RSD160P05 FIg.13 Typical Capacitance vs. Drain-Source Voltage Fig.14 Maximum Safe Operating Area 100000 100 Ciss Coss 100 10 PW = 1ms 1 e N co ew m m D es en ig de ns d f Crss PW = 100μs 10 or 1000 Drain Current : -ID[ A ] 10000 Capacitance : C [pF] Operation in this area is limited by RDS(on) (VGS = -10V) Ta=25°C f=1MHz VGS=0V Tc=25°C Single Pulse 1 0.01 0.1 1 10 0.1 100 Drain-Source Voltage : -VDS [V] 0.1 1 10 PW = 10ms DC Operation 100 Drain-Source Voltage : -VDS [ V ] Fig.15 Normalized Transient Thermal Resistance v.s. Pulse Width Normalized Transient Thermal Resistance : r（t） 10 TC=25°C Single Pulse 1 0.1 0.01 Rth(ch-c)=6.25°C/W Rth(ch-c)(t)=r(t)×Rth(ch-c) 0.001 0.0001 0.001 0.01 0.1 1 10 100 1000 N ot R Pulse width : Pw (s) www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 5/6 2011.08 - Rev.A Data Sheet 　 RSD160P05  Measurement circuits Pulse width ID VDS VGS VGS 10% 50% 90% 50% RL 10% VDD RG VDS 90% td(on) 90% td(off) tr ton tf toff Fig.1-2 Switching Waveforms e N co ew m m D es en ig de ns d f Fig.1-1 Switching Time Measurement Circuit 10% or D.U.T. VG ID VDS VGS RL IG(Const.) D.U.T. Qg VGS Qgs Qgd VDD Charge Fig.2-2 Gate Charge Waveform N ot R Fig.2-1 Gate Charge Measurement Circuit www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 6/6 2011.08 - Rev.A Notice N ot R e N co ew m m D es en ig de ns d fo r Notes Thank you for your accessing to ROHM product informations. More detail product informations and catalogs are available, please contact us. ROHM Customer Support System http://www.rohm.com/contact/ www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. R1120A