Data Sheet
1.5V Drive Pch MOSFET
RT1A060AP
Structure Silicon P-channel MOSFET Dimensions (Unit : mm)
TSST8
(8)
(7)
(6)
(5)
Features 1) Low on-resistance. 2) Low voltage drive (1.5V drive). 3) Small surface mount package (TSST8).
(1)
(2)
(3)
(4)
Abbreviated symbol : SG
Application Switching
Packaging specifications Package Type Code Basic ordering unit (pieces) RT1A060AP Taping TR 3000
Inner circuit
(8) (7) (6) (5)
∗2
(1) Drain (2) Drain (3) Drain (4) Gate (5) Source (6) Drain (7) Drain (8) Drain
∗1
(1)
(2)
(3)
(4)
1 ESD PROTECTION DIODE 2 BODY DIODE
Absolute maximum ratings (Ta = 25C) Symbol Parameter Drain-source voltage Gate-source voltage Drain current Source current (Body Diode) Power dissipation Channel temperature Range of storage temperature
*1 Pw10s, Duty cycle1% *2 Mounted on a ceramic board.
Limits 12 0 to 8 6
Unit V V A A A A W C C
VDSS Continuous Pulsed Continuous Pulsed VGSS ID IDP IS ISP PD Tch Tstg
*1
*1 *2
18 1 18 1.25 150 55 to 150
Thermal resistance Parameter Channel to Ambient
*Mounted on a ceramic board.
Symbol Rth (ch-a)*
Limits 100
Unit C / W
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2011.08 - Rev.A
RT1A060AP
Electrical characteristics (Ta = 25C) Parameter Gate-source leakage Zero gate voltage drain current Gate threshold voltage Static drain-source on-state resistance Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Total gate charge Gate-source charge Gate-drain charge
*Pulsed
Symbol IGSS IDSS VGS (th) * RDS (on) Min. 12 0.3 l Yfs l* Ciss Coss Crss td(on)* tr * td(off)* tf * Qg * Qgs * Qgd * 9 Typ. 14 17 22 27 7800 900 850 25 100 580 260 80 12 13 Max. 10 10 1.0 19 24 33 54 S pF pF pF ns ns ns ns nC nC nC VDD 6V, ID=6A VGS=4.5V m Unit A V A V Conditions VGS=8V, VDS=0V ID=1mA, V GS=0V VDS=12V, VGS=0V VDS=6V, ID=1mA ID=6A, VGS=4.5V ID=3A, VGS=2.5V ID=3A, VGS=1.8V ID=1.2A, VGS=1.5V VDS=6V, ID=6A VDS=6V VGS=0V f=1MHz VDD 6V, ID=3A VGS=4.5V RL=2 RG=10
Data Sheet
Drain-source breakdown voltage V(BR)DSS
Body diode characteristics (Source-Drain) Parameter Forward Voltage
*Pulsed
Symbol VSD *
Min. -
Typ. -
Max. 1.2
Unit V
Conditions Is=6A, VGS=0V
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2011.08 - Rev.A
RT1A060AP
Electrical characteristic curves (Ta=25C)
Fig.1 Typical Output Characteristics (Ⅰ) 6 VGS=-1.2V 5 VGS=-4.5V Drain Current : -ID [A] 4 VGS=-2.5V VGS=-1.8V VGS=-1.5V 3 Ta=25°C pulsed
Data Sheet
Fig.2 Typical Output Characteristics ( Ⅱ) 6 VGS=-1.2V 5 VGS=-4.5V Drain Current : -ID [A] 4 VGS=-2.5V VGS=-1.8V 3 VGS=-1.5V Ta=25°C pulsed
2
2
VGS=-1.0V
1
VGS=-1.0V
1
0 0 0.2 0.4 0.6 0.8 1 Drain-Source Voltage : -VDS [V]
0 0 2 4 6 8 10 Drain-Source Voltage : -VDS [V]
Fig.3 Static Drain-Source On-State Resistance vs. Drain Current 100 Ta=25°C pulsed VGS=-1.5V VGS=-1.8V VGS=-2.5V VGS=-4.5V
Fig.4 Static Drain-Source On-State Resistance vs. Drain Current 100 VGS=-4.5V pulsed Static Drain-Source On-State Resistance RDS(on) [mW ]
Static Drain-Source On-State Resistance RDS(on) [mW ]
10
10
Ta=125°C Ta=75°C Ta=25°C Ta=-25°C
1 0.01
0.1
1
10
1 0.01
0.1
1
10
Drain Current : -ID [A]
Drain Current : -ID [A]
Fig.5 Static Drain-Source On-State Resistance vs. Drain Current 100 VGS=-2.5V pulsed Static Drain-Source On-State Resistance RDS(on) [mW ] Ta=125°C Ta=75°C Ta=25°C Ta=-25°C
Fig.6 Static Drain-Source On-State Resistance vs. Drain Current 100 VGS=-1.8V pulsed Static Drain-Source On-State Resistance RDS(on) [mW ]
10
10
Ta=125°C Ta=75°C Ta=25°C Ta=-25°C
1 0.01
0.1
1
10
1 0.01
0.1
1
10
Drain Current : -ID [A]
Drain Current : -ID [A]
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2011.08 - Rev.A
RT1A060AP
Data Sheet
Fig.7 Static Drain-Source On-State Resistance vs. Drain Current 100 VGS=-1.5V pulsed Static Drain-Source On-State Resistance RDS(on) [mW ] 100
Fig.8 Forward Transfer Admittance vs. Drain Current
VDS=-6V pulsed
Forward Transfer Admittance Yfs [S]
10
10
Ta=125°C Ta=75°C Ta=25°C Ta=-25°C
1
Ta=125°C Ta=75°C Ta=25°C Ta=-25°C
0.1
1 0.01
0.1
1
10
0.01 0.01
0.1
1
10
Drain Current : -ID [A]
Drain Current : -ID [A]
Fig.9 Typical Transfer Characteristics 10 VDS=-6V pulsed 10
Fig.10 Source Current vs. Source-Drain Voltage
VGS=0V pulsed
1 Drain Currnt : -ID [A]
Source Current : -Is [A]
Ta=125°C Ta=75°C Ta=25°C Ta=-25°C
1
0.1
Ta=125°C Ta=75°C Ta=25°C Ta=-25°C
0.1
0.01
0.001 0.0 0.5 1.0 1.5 2.0 Gate-Source Voltage : -VGS [V]
0.01 0.0 0.5 1.0 1.5 2.0 Source-Drain Voltage : -VSD [V]
Fig.11 Static Drain-Source On-State Resistance vs. Gate-Source Voltage 50 Ta=25°C pulsed Static Drain-Source On-State Resistance RDS(on) [mW ] 40 ID=-1.2A 1000 Switching Time : t [ns] ID=-6.0A 30 10000
Fig.12 Switching Characteristics
tf
td(off)
VDD≒-6V VGS=-4.5V RG=10W Ta=25°C Pulsed
100 tr
20
10 10
td(on)
0 0 2 4 6 8 Gate-Source Voltage : -VGS [V]
1 0.01 0.1 1 10 Drain Current : -ID [A]
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4/6
2011.08 - Rev.A
RT1A060AP
Data Sheet
Fig.13 Dynamic Input Characteristics 5 Ta=25°C VDD=-6V ID=-6A Pulsed 10000 100000
Fig.14 Typical Capacitance vs. Drain-Source Voltage
4 Gate-Source Voltage : -VGS [V]
Ta=25°C f=1MHz VGS=0V Ciss Capacitance : C [pF]
3
2
1000
Coss
1
Crss
0 0 20 40 60 80 100 Total Gate Charge : Qg [nC]
100 0.01 0.1 1 10 100 Drain-Source Voltage : -VDS [V]
Fig.15 Normalized Transient Thermal Resistance v.s. Pulse Width 10 Normalized Transient Thermal Resistance : r(t) Ta=25°C Single Pulse 100
Fig.16 Maximum Safe Operating Area
Operation in this area is limited by RDS(on) (VGS = -4.5V) PW = 100μs 10 Drain Current : -ID [ A ] PW = 1ms
1
0.1
1
PW = 10ms
0.01 Mounted on a ceramic board. (30mm × 30mm × 0.8mm) Rth(ch-a)=100°C/W Rth(ch-a)(t)=r(t)×Rth(ch-a) 0.001
0.0001 0.001 0.01 0.1 1 10 100 1000
0.1
Ta=25°C Single Pulse Mounted on a ceramic board. (30mm × 30mm × 0.8mm) 0.1 1 10
DC Operation
0.01 0.01
100
Pulse width : Pw (s)
Drain-Source Voltage : -VDS [ V ]
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5/6
2011.08 - Rev.A
RT1A060AP
Measurement circuits
Data Sheet
Pulse width
ID VGS RL D.U.T. RG VDD VDS
VGS
10% 50% 10%
90%
50% 10% 90%
VDS
90% td(on) ton tr td(off) toff
tf
Fig.1-1 Switching Time Measurement Circuit
Fig.1-2 Switching Waveforms
VG
ID VGS RL IG(Const.) D.U.T. VDD
VDS
VGS Qgs
Qg
Qgd
Charge
Fig.2-1 Gate Charge Measurement Circuit
Fig.2-2 Gate Charge Waveform
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2011.08 - Rev.A
Notice
Notes
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R1120A
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