RT1E060XN

Data Sheet 4V Drive Nch MOSFET RT1E060XN  Structure Silicon N-channel MOSFET  Dimensions (Unit : mm) TSST8 (8) (7) (6) (5) Features 1) Low on-resistance. 2) Built-in G-S Protection Diode. 3) Small Surface Mount Package (TSST8). (1) (2) (3) (4) Abbreviated symbol : XR  Application Switching  Packaging specifications Package Type Code Basic ordering unit (pieces) RT1E060XN Taping TCR 3000   Inner circuit (8) (7) (6) (5) ∗2  Absolute maximum ratings (Ta = 25C) Symbol Parameter Drain-source voltage Gate-source voltage Drain current Source current (Body Diode) Power dissipation Channel temperature Range of storage temperature *1 Pw10s, Duty cycle1% *2 Mounted on a ceramic board. Limits 30 20 6 24 1 24 1.25 150 55 to 150 Unit V V A A A A W C C VDSS Continuous Pulsed Continuous Pulsed VGSS ID IDP *1 IS ISP PD Tch Tstg *1 *2 (1) Drain (2) Drain (3) Drain (4) Gate (5) Source (6) Drain (7) Drain (8) Drain ∗1 (1) (2) (3) (4) ∗1 ESD PROTECTION DIODE ∗2 BODY DIODE  Thermal resistance Parameter Channel to Ambient *Mounted on a ceramic board. Symbol Rth (ch-a)* Limits 100 Unit C / W www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 1/6 2011.04 - Rev.A RT1E060XN  Electrical characteristics (Ta = 25C) Parameter Gate-source leakage Zero gate voltage drain current Gate threshold voltage Static drain-source on-state resistance Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Total gate charge Gate-source charge Gate-drain charge *Pulsed Data Sheet Symbol IGSS IDSS VGS (th) * RDS (on) l Yfs l * Ciss Coss Crss td(on) * tr * td(off) * tf * Qg * Qgs * Qgd * Min. 30 1.0 4.5 Typ. 16 21 23 440 170 85 8 16 32 8 6.8 1.6 2.6 Max. 10 1 2.5 22 29 32 S pF pF pF ns ns ns ns nC nC nC Unit A V A V Conditions VGS=20V, VDS=0V ID=1mA, V GS=0V VDS=30V, VGS=0V VDS=10V, ID=1mA ID=6A, VGS=10V m  ID=6A, VGS=4.5V ID=6A, VGS=4.0V ID=6A, VDS=10V VDS=10V VGS=0V f=1MHz ID=3A, VDD 15V VGS=10V RL=5 RG=10 ID=6A, VDD 15V VGS=5V Drain-source breakdown voltage V(BR)DSS Body diode characteristics (Source-Drain) (Ta = 25C) Parameter Forward Voltage *Pulsed Symbol VSD * Min. - Typ. - Max. 1.2 Unit V Conditions Is=6A, VGS=0V www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 2/6 2011.04 - Rev.A RT1E060XN Electrical characteristic curves (Ta=25C) Fig.1 Typical Output Characteristics (Ⅰ) 6 VGS=3.0V 5 VGS=10.0V Drain Current : ID [A] 4 VGS=4.5V VGS=4.0V 3 VGS=2.8V Ta=25°C Pulsed 　 Data Sheet Fig.2 Typical Output Characteristics (Ⅱ) 6 5 VGS=10.0V VGS=4.5V VGS=4.0V VGS=2.5V Drain Current : ID [A] 4 VGS=3.0V 3 VGS=2.8V 2 2 1 VGS=2.5V 1 Ta=25°C Pulsed 0 1 0 2 4 6 8 10 0 0 0.2 0.4 0.6 0.8 Drain-Source Voltage : VDS [V] Drain-Source Voltage : VDS [V] Fig.3 Static Drain-Source On-State Resistance vs. Drain Current 100 Ta=25°C Pulsed Fig.4 Static Drain-Source On-State Resistance vs. Drain Current 100 VGS=10V pulsed Static Drain-Source On-State Resistance RDS(on) [mΩ] Static Drain-Source On-State Resistance RDS(on) [mΩ] 10 VGS=4.0V VGS=4.5V VGS=10V 10 Ta=125°C Ta=75°C Ta=25°C Ta=-25°C 1 0.01 0.1 1 Drain Current : ID [A] 10 100 1 0.01 0.1 1 Drain Current : ID [A] 10 100 Fig.5 Static Drain-Source On-State Resistance vs. Drain Current 100 VGS=4.5V pulsed Static Drain-Source On-State Resistance RDS(on) [mΩ] Static Drain-Source On-State Resistance RDS(on) [mΩ] Fig.6 Static Drain-Source On-State Resistance vs. Drain Current 100 VGS=4V pulsed 10 Ta=125°C Ta=75°C Ta=25°C Ta=-25°C 10 Ta=125°C Ta=75°C Ta=25°C Ta=-25°C 1 0.01 0.1 1 Drain Current : ID [A] 10 100 1 0.01 0.1 1 Drain Current : ID [A] 10 100 www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 3/6 2011.04 - Rev.A RT1E060XN 　 Data Sheet Fig.7 Forward Transfer Admittance vs. Drain Current 100 VDS=10V pulsed 10 Forward Transfer Admittance Yfs [S] 10 Drain Currnt : ID [A] 100 Fig.8 Typical Transfer Characteristics VDS=10V pulsed 1 1 Ta=125°C Ta=75°C Ta=25°C Ta=-25°C 0.1 0.1 Ta=125°C Ta=75°C Ta=25°C Ta=-25°C 0.01 0.01 0.001 0.001 0.01 0.1 1 10 100 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 Gate-Source Voltage : VGS [V] Drain Current : ID [A] Fig.9 Source Current vs. Source-Drain Voltage 100 VGS=0V pulsed Static Drain-Source On-State Resistance RDS(on) [mΩ] Fig.10 Static Drain-Source On-State Resistance vs. Gate-Source Voltage 100 Ta=25°C Pulsed 80 ID=6.0A ID=3.0A 60 10 Source Current : Is [A] 1 Ta=125°C Ta=75°C Ta=25°C Ta=-25°C 40 0.1 20 0.01 0.0 0.5 1.0 1.5 2.0 Source-Drain Voltage : VSD [V] 0 0 2 4 6 8 10 Gate-Source Voltage : VGS [V] Fig.11 Switching Characteristics 1000 VDD≒15V VGS=10V RG=10Ω Ta=25°C Pulsed td(off) 10 Ta=25°C VDD=15V ID=6A Pulsed Fig.12 Dynamic Input Characteristics tf Switching Time : t [ns] 100 8 Gate-Source Voltage : VGS [V] 6 td(on) 10 4 2 tr 1 0.01 0.1 1 Drain Current : ID [A] 10 100 0 0 2 4 6 8 10 12 14 Total Gate Charge : Qg [nC] www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 4/6 2011.04 - Rev.A RT1E060XN 　 Data Sheet Fig.13 Typical Capacitance vs. Drain-Source Voltage 10000 Ta=25°C f=1MHz VGS=0V 10 Capacitance : C [pF] 1000 Drain Current : ID [ A ] 100 Fig.14 Maximum Safe Operating Area Operation in this area is limited by RDS(on) (VGS = 10V) PW = 100μs Ciss 100 Coss Crss 1 PW = 1ms 0.1 PW = 10ms Ta=25°C Single Pulse Mounted on a ceramic board. (30mm × 30mm × 0.8mm) 0.1 1 10 DC operation 10 0.01 0.1 1 10 100 0.01 0.01 100 Drain-Source Voltage : VDS [V] Drain-Source Voltage : VDS [ V ] Fig.15 Normalized Transient Thermal Resistance v.s. Pulse Width 10 Normalized Transient Thermal Resistance : r（t） Ta=25°C Single Pulse 1 0.1 0.01 Mounted on a ceramic board. (30mm × 30mm × 0.8mm) Rth(ch-a)=100°C/W Rth(ch-a)(t)=r(t)×Rth(ch-a) 0.001 0.0001 0.001 0.01 0.1 1 10 100 1000 Pulse width : Pw (s) www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 5/6 2011.04 - Rev.A RT1E060XN  Measurement circuits Pulse width VGS ID RL D.U.T. RG VDD VDS Data Sheet VGS VDS 50% 10% 10% 90% td(on) ton tr 90% 50% 10% 90% td(off) toff tf Fig.1-1 Switching Time Measurement Circuit VGS Fig.1-2　Switching Waveforms VG ID RL VDS Qg VGS Qgs Qgd IG(Const.) D.U.T. VDD Charge Fig.2-1 Gate Charge Measurement Circuit Fig.2-2 Gate Charge Waveform  Notice This product might cause chip aging and breakdown under the large electrified environment. Please consider to design ESD protection circuit. www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 6/6 2011.04 - Rev.A Notice Notes Thank you for your accessing to ROHM product informations. More detail product informations and catalogs are available, please contact us. ROHM Customer Support System http://www.rohm.com/contact/ www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. R1120A