RTF015N03

2.5V Drive Nch MOSFET RTF015N03 Structure Silicon N-channel MOSFET Dimensions (Unit : mm) TUMT3 0.85Max. 0.77 2.0 0.2 Features 1) Low On-resistance. 2) Space saving, small surface mount package (TUMT3). 3) Low voltage drive (2.5V drive). (1) Gate 0.3 (3) 1.7 (1) (2) 2.1 0~0.1 0.65 0.65 1.3 0.17 Applications Switching Packaging specifications Package Type RTF015N03 Code Basic ordering unit (pieces) Taping TL 3000 (2) Source (3) Drain Abbreviated symbol : PP Inner circuit (3) (1) ∗1 ∗2 (2) ∗1 ESD PROTECTION DIODE ∗2 BODY DIODE (1) Gate (2) Source (3) Drain Absolute maximum ratings (Ta=25°C) Parameter Drain-source voltage Gate-source voltage Drain current Source current (Body diode) Total power dissipation Channel temperature Range of storage temperature ∗1 Pw≤10µs, Duty cycle≤1% ∗2 Mounted on a ceramic board Continuous Pulsed Continuous Pulsed Symbol VDSS VGSS ID IDP ∗1 IS ISP ∗1 PD ∗2 Tch Tstg Limits 30 12 ±1.5 ±6.0 0.6 6.0 0.8 150 −55 to +150 Unit V V A A A A W °C °C Thermal resistance Parameter Channel to ambient ∗ Mounted on a ceramic board Symbol Rth(ch-a) ∗ Limits 156 Unit °C/W www.rohm.com c ○ 2009 ROHM Co., Ltd. All rights reserved. 0.2Max. 0.2 1/3 2009.03 - Rev.A RTF015N03 Electrical characteristics (Ta=25°C) Parameter Symbol Min. − 30 − 0.5 − − − 1.5 − − − − − − − − − − Typ. − − − − 170 180 240 − 80 14 12 7 9 15 6 1.6 0.5 0.3 Max. 10 − 1 1.5 240 250 340 − − − − − − − − 2.2 − − IGSS Gate-source leakage Drain-source breakdown voltage V(BR) DSS Zero gate voltage drain current IDSS Gate threshold voltage VGS (th) Static drain-source on-state resistance Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Total gate charge Gate-source charge Gate-drain charge ∗Pulsed Data Sheet Unit µA V µA V mΩ mΩ mΩ S pF pF pF ns ns ns ns nC nC nC Conditions VGS=12V, VDS=0V ID= 1mA, VGS=0V VDS= 30V, VGS=0V VDS= 10V, ID= 1mA ID= 1.5A, VGS= 4.5V ID= 1.5A, VGS= 4V ID= 1.5A, VGS= 2.5V VDS= 10V, ID= 1.5A VDS= 10V VGS=0V f=1MHz VDD 15V ID= 0.75A VGS= 4.5V RL=20Ω RG=10Ω VDD 15V VGS= 4.5V ID= 1.5A RG=10Ω RL=10Ω RDS (on)∗ Yfs Ciss Coss Crss td (on) tr td (off) tf Qg Qgs Qgd ∗ ∗ ∗ ∗ ∗ ∗ ∗ ∗ Body diode characteristics (Source-drain) (Ta=25°C) Parameter Forward voltage Symbol VSD Min. − Typ. − Max. 1.2 Unit V Conditions IS= 0.6A, VGS=0V www.rohm.com c ○ 2009 ROHM Co., Ltd. All rights reserved. 2/3 2009.03 - Rev.A RTF015N03 Electrical characteristics curves Data Sheet 1000 GATE-SOURCE VOLTAGE : VGS (V) DRAIN CURRENT : ID (A) SWITCHING TIME : t (ns) Ta=25°C VDD=15V VGS=4.5V RG=10Ω Pulsed tf 6 Ta=25°C VDD=15V ID=1.5A 5 RG=10Ω Pulsed 10 VDS=10V Pulsed 1 Ta=125°C 75°C 25°C −25°C 100 td(off) 4 3 0.1 10 td(on) 2 0.01 tr 1 0 0.001 0.0 1 0.01 0.1 1 10 0 0.5 1 1.5 2 0.5 1.0 1.5 2.0 2.5 DRAIN CURRENT : ID (A) TOTAL GATE CHARGE : Qg (nC) GATE-SOURCE VOLTAGE : VGS (V) Fig.1 Switching Characteristics Fig.2 Dynamic Input Characteristics Fig.3 Typical Transfer Characteristics 1.0 STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS (mΩ) 0.9 0.8 0.7 0.6 0.5 0.4 0.3 0.2 0.1 0.0 0 1 2 3 4 5 6 7 Ta=125°C 1 75°C 25°C −25°C STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS (on) (Ω) Ta=25°C Pulsed 10 VGS=0V Pulsed 10 VGS=4.5V Pulsed SOURCE CURRENT : IS (A) 1 Ta=125°C 75°C 25°C −25°C 0.1 8 9 10 0.01 0.0 0.5 1.0 1.5 0.1 0.01 0.1 1 10 GATE-SOURCE VOLTAGE : VGS (V) SOURCE-DRAIN VOLTAGE : VSD (V) DRAIN CURRENT : ID (A) Fig.4 Static Drain-Source On-State Resistance vs. Gate source Voltage Fig.5 Source Current vs. Source-Drain Voltage Fig.6 Static Drain-Source On-State Resistance vs. Drain Current ( Ι ) 10 STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS (on) (Ω) STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS (on) (Ω) 1 Ta=125°C 75°C 25°C −25°C 1 Ta=125°C 75°C 25°C −25°C STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS (on) (Ω) VGS=4.0V Pulsed 10 VGS=2.5V Pulsed 10 Ta=25°C Pulsed 1 VGS=2.5V VGS=4V VGS=4.5V 0.1 0.01 0.1 1 10 0.1 0.01 0.1 1 10 0.1 0.01 0.1 1 10 DRAIN CURRENT : ID (A) DRAIN CURRENT : ID (A) DRAIN CURRENT : ID (A) Fig.7 Static Drain-Source On-State Resistance vs. Drain Current ( ΙΙ ) Fig.8 Static Drain-Source On-State Resistance vs. Drain Current ( ΙΙΙ ) Fig.9 Static Drain-Source On-State Resistance vs. Drain Current ( Ι ) www.rohm.com c ○ 2009 ROHM Co., Ltd. All rights reserved. 3/3 2009.03 - Rev.A Appendix Notes No copying or reproduction of this document, in part or in whole, is permitted without the consent of ROHM Co.,Ltd. The content specified herein is subject to change for improvement without notice. The content specified herein is for the purpose of introducing ROHM's products (hereinafter "Products"). If you wish to use any such Product, please be sure to refer to the specifications, which can be obtained from ROHM upon request. Examples of application circuits, circuit constants and any other information contained herein illustrate the standard usage and operations of the Products. The peripheral conditions must be taken into account when designing circuits for mass production. Great care was taken in ensuring the accuracy of the information specified in this document. However, should you incur any damage arising from any inaccuracy or misprint of such information, ROHM shall bear no responsibility for such damage. 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