RTF016N05

Data Sheet 2.5V Drive Nch MOSFET RTF016N05  Structure Silicon N-channel MOSFET  Dimensions (Unit : mm) TUMT3 0.2Max. Features 1) Low on-resistance. 2) Built-in G-S Protection Diode. 3) Small Surface Mount Package (TUMT3). Abbreviated symbol : PU  Application Switching  Packaging specifications Package Type Code Basic ordering unit (pieces) RTF016N05 Taping TL 3000   Inner circuit (3) ∗2 ∗1  Absolute maximum ratings (Ta = 25 C) Parameter Drain-source voltage Gate-source voltage Drain current Source current (Body Diode) Power dissipation Channel temperature Range of storage temperature *1 Pw10s, Duty cycle1% *2 Mounted on a ceramic board. Symbol VDSS VGSS Limits 45 12 1.6 Unit V V A A A A W C C (1) Gate (2) Source (3) Drain (1) (2) ∗1 ESD PROTECTION DIODE ∗2 BODY DIODE Continuous Pulsed Continuous Pulsed ID IDP IS ISP PD Tch Tstg *1 6.4 0.6 6.4 0.8 150 55 to 150 *1 *2  Thermal resistance Parameter Channel to Ambient *Mounted on a ceramic board. Symbol Rth (ch-a)* Limits 156 Unit C / W www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 1/6 2011.05 - Rev.A RTF016N05  Electrical characteristics (Ta = 25 C) Parameter Gate-source leakage Zero gate voltage drain current Gate threshold voltage Static drain-source on-state resistance Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Total gate charge Gate-source charge Gate-drain charge *Pulsed Data Sheet Symbol IGSS IDSS VGS (th) * RDS (on) l Yfs l* Ciss Coss Crss td(on) * tr * td(off) * tf * Qg * Qgs * Qgd * Min. 45 0.5 1.5 - Typ. 140 150 200 150 40 15 8 14 16 10 2.3 0.8 0.5 Max. 10 1 1.5 190 210 280 - Unit A V A V Conditions VGS=12V, VDS=0V ID=1mA, VGS=0V VDS=45V, VGS=0V VDS=10V, ID=1mA ID=1.6A, VGS=4.5V Drain-source breakdown voltage V(BR)DSS m ID=1.6A, VGS=4.0V ID=1.6A, VGS=2.5V S pF pF pF ns ns ns ns nC nC nC ID=1.6A, VDS=10V VDS=10V VGS=0V f=1MHz ID=0.8A, VDD 25V VGS=4.5V RL=31.3 RG=10 ID=1.6A, VDD 25V VGS=4.5V Body diode characteristics (Source-Drain) (Ta = 25C) Parameter Forward Voltage *Pulsed Symbol VSD * Min. - Typ. - Max. 1.2 Unit V Conditions Is=1.6A, VGS=0V www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 2/6 2011.05 - Rev.A RTF016N05 Electrical characteristic curves (Ta=25C) Fig.1 Typical Output Characteristics(Ⅰ) 1.6 1.4 1.2 DRAIN CURRENT : ID[A] 1 VGS= 1.8V 0.8 0.6 0.4 0.2 0 0 0.2 0.4 0.6 0.8 1 DRAIN-SOURCE VOLTAGE : VDS[V] VGS= 2.0V Ta=25°C Pulsed 　 Data Sheet Fig.2 Typical Output Characteristics(Ⅱ) 1.6 1.4 1.2 DRAIN CURRENT : ID[A] 1 0.8 0.6 0.4 0.2 0 0 2 4 6 8 10 DRAIN-SOURCE VOLTAGE : VDS[V] Ta=25°C Pulsed VGS= 2.0V VGS= 10V VGS= 4.5V VGS= 4.0V VGS= 2.5V VGS= 1.8V VGS= 10V VGS= 4.5V VGS= 4.0V VGS= 2.5V Fig.3 Typical Transfer Characteristics 10 STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS(on)[mΩ] VDS= 10V Pulsed 1 DRAIN CURRENT : ID[A] Ta= 125°C Ta= 75°C Ta= 25°C Ta= - 25°C 1000 Fig.4 Static Drain-Source On-State Resistance vs. Drain Current(Ⅰ) Ta=25°C Pulsed 0.1 100 . 0.01 VGS= 2.5V VGS= 4.0V VGS= 4.5V 0.001 0 1 2 3 GATE-SOURCE VOLTAGE : VGS[V] Fig.5 Static Drain-Source On-State Resistance vs. Drain Current(Ⅱ) 1000 VGS= 4.5V Pulsed STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS(on)[mΩ] STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS(on)[mΩ] 10 0.1 1 DRAIN-CURRENT : ID[A] 10 Fig.6 Static Drain-Source On-State Resistance vs. Drain Current(Ⅲ) 1000 VGS= 4.0V Pulsed 100 Ta= 125°C Ta= 75°C Ta= 25°C Ta= - 25°C 100 Ta= 125°C Ta= 75°C Ta= 25°C Ta= - 25°C 10 0.1 1 DRAIN-CURRENT : ID[A] 10 10 0.1 1 DRAIN-CURRENT : ID[A] 10 www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 3/6 2011.05 - Rev.A RTF016N05 　 Fig.7 Static Drain-Source On-State Resistance vs. Drain Current(Ⅳ) Fig.8 Forward Transfer Admittance vs. Drain Current 10 FORWARD TRANSFER ADMITTANCE : |Yfs| [S] Data Sheet 1000 VGS= 2.5V Pulsed STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS(on)[mΩ] VDS= 10V Pulsed 100 Ta= 125°C Ta= 75°C Ta= 25°C Ta= - 25°C 1 Ta= 125°C Ta= 75°C Ta= 25°C Ta= - 25°C 10 0.1 1 DRAIN-CURRENT : ID[A] Fig.9 Reverse Drain Current vs. Sourse-Drain Voltage 10 VGS=0V Pulsed STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS(ON)[mΩ] SOURCE CURRENT : Is [A] 10 0.1 0.01 0.1 1 10 DRAIN-CURRENT : ID[A] Fig.10 Static Drain-Source On-State Resistance vs. Gate Source Voltage 350 ID= 1.6A 300 250 1 ID= 0.8A 200 0.1 Ta= 125°C Ta= 75°C Ta= 25°C Ta= - 25°C 150 100 50 0.01 0 0.5 1 1.5 SOURCE-DRAIN VOLTAGE : VSD [V] 0 0 2 4 6 8 10 GATE-SOURCE VOLTAGE : VGS[V] Fig.11 Switching Characteristics 1000 GATE-SOURCE VOLTAGE : VGS [V] td(off) Ta=25°C VDD=25V VGS=4.5V RG=10W Pulsed 10 Fig.12 Dynamic Input Characteristics 8 SWITCHING TIME : t [ns] tf 100 6 4 Ta=25°C VDD= 25V ID= 1.6A RG=10W Pulsed 0 1 2 3 4 5 10 tr td(on) 2 1 0.01 0.1 1 10 DRAIN-CURRENT : ID[A] 0 TOTAL GATE CHARGE : Qg [nC] www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 4/6 2011.05 - Rev.A RTF016N05 　 Fig.13 Typical Capacitance vs. Drain-Source Voltage Data Sheet Fig.14 Maximum Safe Operating Area 100 1000 Ciss Operation in this area is limited by RDS(ON) (VGS=4.5V) DRAIN CURRENT : ID (A) 10 CAPACITANCE : C [pF] 100 1 DC operation 0.1 PW =100us 10 Crss Coss Ta=25°C f=1MHz VGS=0V PW =1ms PW =10ms 1 0.01 0.1 1 10 100 DRAIN-SOURCE VOLTAGE : VDS[V] Ta=25°C Single Pulse Mounted on a ceramic board. (30mm × 30mm × 0.8mm) 0.1 1 10 100 0.01 DRAIN-SOURCE VOLTAGE : VDS[V] Fig.15 Normalized Transient Thermal Resistance vs. Pulse Width 10 Ta = 25°C Single Pulse NORMARIZED TRANSIENT THERMAL RESISTANCE : r (t) 1 0.1 0.01 Mounted on a ceramic board. (30mm × 30mm × 0.8mm) Rth(ch-a)=156°C/W Rth(ch-a)(t)=r(t)×Rth(ch-a) 0.001 0.01 0.1 1 10 100 1000 0.001 0.0001 PULSE WIDTH : Pw(s) www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 5/6 2011.05 - Rev.A RTF016N05  Measurement circuits Pulse width Data Sheet VGS ID RL D.U.T. VDS VGS VDS 50% 10% 10% 90% 50% 10% 90% RG VDD td(on) ton 90% tr td(off) toff tf Fig.1-1 Switching Time Measurement Circuit VGS Fig.1-2　Switching Waveforms VG ID RL VDS Qg VGS Qgs Qgd IG(Const.) D.U.T. VDD Charge Fig.2-1 Gate Charge Measurement Circuit Fig.2-2 Gate Charge Waveform www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 6/6 2011.05 - Rev.A Notice Notes Thank you for your accessing to ROHM product informations. More detail product informations and catalogs are available, please contact us. ROHM Customer Support System http://www.rohm.com/contact/ www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. R1120A