RTQ025P02TR

RTQ025P02 Transistor DC-DC Converter (−20V, −2.5A) RTQ025P02 zExternal dimensions (Units : mm) zFeatures 1) Low On-resistance.(140mΩ at 2.5V) 2) High Power Package. 3) High speed switching. 4) Low voltage drive.(2.5V) TSMT6 2.8 0.85 2.9 (4) (5) (6) 0.16 0.4 (3) (2) (1) 1.6 Each lead has same dimensions Abbreviatedsymbol : TQ zApplications DC-DC converter zEquivalent circuit zStructure Silicon P-channel MOSFET (6) (5) ∗2 zPackaging specifications Package Type Code Basic ordering unit (pieces) (4) Taping ∗1 TR 3000 RTQ025P02 (1) (2) (3) (1)DRAIN (2)DRAIN (3)GATE (4)SOURCE (5)DRAIN (6)DRAIN ∗1 ESD PROTECTION DIODE ∗2 BODY DIODE 1/4 RTQ025P02 Transistor zAbsolute maximum ratings (Ta=25°C) Symbol Limits Unit Drain−source voltage VDSS −20 V Gate−source voltage VGSS ±12 V Continuous ID ±2.5 A Pulsed IDP ±10 A Continuous IS −1 A Pulsed ISP −4 A PD 1.25 W ∗2 Parameter Drain current Source current (Body diode) Total power dissipation Channel temperature Tch 150 °C Range of Storage temperature Tstg −55~+150 °C ∗1 ∗1