Data Sheet
2.5V Drive Nch MOSFET
RU1L002SN
Structure Silicon N-channel MOSFET Dimensions (Unit : mm)
UMT3F
2.0
0.32
0.9
0.53
Features 1) Low on-resistance. 2) Low voltage drive (2.5V drive). 3) Small package (UMT3F).
0.425
(3)
1.25
2.1
(1) 0.65 0.65 1.3
(2) 0.13
Abbreviated symbol : RK
Application Switching
Packaging specifications Package Type Code Basic ordering unit (pieces) RU1L002SN Taping TCL 3000
Inner circuit
(3)
(1)
∗2
∗1
(1) Gate (2) Source (3) Drain
(2)
1 ESD PROTECTION DIODE 2 BODY DIODE
Absolute maximum ratings (Ta = 25C) Symbol Parameter Drain-source voltage Gate-source voltage Drain current Source current (Body Diode) Power dissipation Channel temperature Range of storage temperature
*1 Pw10s, Duty cycle1% *2 Each terminal mounted on a recommended land
Limits 60 20 250 1 125 1 200 150 55 to 150
Unit V V mA A mA A mW C C
VDSS Continuous Pulsed Continuous Pulsed VGSS ID IDP *1 IS ISP Tch Tstg
*1
PD *2
Thermal resistance Parameter Channel to Ambient
* Each terminal mounted on a recommended land
Symbol * Rth (ch-a)
Limits 625
Unit C / W
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2011.08 - Rev.A
0.53
0.425
RU1L002SN
Electrical characteristics (Ta = 25 C) Parameter Gate-source leakage Zero gate voltage drain current Gate threshold voltage Static drain-source on-state resistance Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time
*Pulsed
Symbol IGSS IDSS VGS (th) * RDS (on) Min. 60 1.0 l Yfs l * Ciss Coss Crss td(on) * tr * td(off) * tf * 0.25 Typ. 1.7 2.1 2.3 3.0 15 4.5 2.0 3.5 5 18 28 Max. 10 1 2.3 2.4 3.0 3.2 12.0 S pF pF pF ns ns ns ns Unit A V A V Conditions VGS=20V, VDS=0V ID=1mA, VGS=0V VDS=60V, VGS=0V VDS=10V, ID=1mA ID=250mA, VGS=10V ID=250mA, VGS=4.5V ID=250mA, VGS=4.0V ID=10mA, VGS=2.5V VDS=10V, ID=250mA VDS=25V VGS=0V f=1MHz VDD 30V, ID=100mA VGS=10V
Data Sheet
Drain-source breakdown voltage V(BR)DSS
Body diode characteristics (Source-Drain) Parameter Forward Voltage
*Pulsed
Symbol VSD *
Min. -
Typ. -
Max. 1.2
Unit V
Conditions Is=250mA, VGS=0V
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2011.08 - Rev.A
RU1L002SN
Electrical characteristic curves (Ta=25C)
Fig.1 Typical Output Characteristics(Ⅰ) 0.5 Ta= 25°C Pulsed 0.4 DRAIN CURRENT : ID[A]
Data Sheet
Fig.2 Typical Output Characteristics(Ⅱ) 0.5 VGS= 10V VGS= 4.5V VGS= 4.0V Ta= 25°C Pulsed
0.4 DRAIN CURRENT : ID[A] VGS= 10V VGS= 4.5V VGS= 4.0V
0.3
0.3
VGS= 2.8V
0.2 VGS= 2.8V
0.2
0.1 VGS= 2.5V 0 0 0.2 0.4 0.6 0.8 1 DRAIN-SOURCE VOLTAGE : VDS[V]
0.1
VGS= 2.5V
0 0 2 4 6 8 10
DRAIN-SOURCE VOLTAGE : VDS[V] Fig.4 Static Drain-Source On-State Resistance vs. Drain Current(Ⅰ) 100 STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS(on)[W ] Ta= 25°C Pulsed VGS= 2.5V VGS= 4.0V VGS= 4.5V VGS= 10V
Fig.3 Typical Transfer Characteristics 1 VDS= 10V Pulsed 0.1 DRAIN CURRENT : ID[A] Ta=125°C Ta=75°C Ta=25°C Ta= -25°C
10
0.01
1
0.001
0.0001 0 1 2 3
0.1 0.001
0.01
0.1
1
GATE-SOURCE VOLTAGE : VGS[V]
DRAIN-CURRENT : ID[A]
Fig.5 Static Drain-Source On-State Resistance vs. Drain Current(Ⅱ) 100 Ta=125°C Ta=75°C Ta=25°C Ta= -25°C STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS(on)[W ] VGS= 10V Pulsed STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS(on)[W ]
Fig.6 Static Drain-Source On-State Resistance vs. Drain Current(Ⅲ) 100 VGS= 4.5V Pulsed
10
10
Ta=125°C Ta=75°C Ta=25°C Ta= -25°C
1
1
0.1 0.001
0.01
0.1
1
0.1 0.001
0.01
0.1
1
DRAIN-CURRENT : ID[A]
DRAIN-CURRENT : ID[A]
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2011.08 - Rev.A
RU1L002SN
Data Sheet
Fig.7 Static Drain-Source On-State Resistance vs. Drain Current(Ⅳ) 100 STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS(on)[W ] VGS= 4.0V Pulsed Ta=125°C Ta=75°C Ta=25°C Ta= -25°C
Fig.8 Static Drain-Source On-State Resistance vs. Drain Current(Ⅳ) 100 VGS= 2.5V Pulsed Ta=125°C Ta=75°C Ta=25°C Ta= -25°C
10
STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS(on)[W ] 1
10
1
1
0.1 0.001
0.01
0.1
0.1 0.001
0.01
0.1
1
DRAIN-CURRENT : ID[A]
DRAIN-CURRENT : ID[A]
Fig.9 Forward Transfer Admittance vs. Drain Current 1 REVERSE DRAIN CURRENT : Is [A] VDS= 10V Pulsed FORWARD TRANSFER ADMITTANCE : |Yfs| [S] 1
Fig.10 Reverse Drain Current vs. Sourse-Drain Voltage
VGS=0V Pulsed
0.1
0.1 Ta=125°C Ta=75°C Ta=25°C Ta= -25°C
0.01
Ta=125°C Ta=75°C Ta=25°C Ta= -25°C
0.01 0.001
0.001 0.01 0.1 1 0 0.5 1 1.5 DRAIN-CURRENT : ID[A] SOURCE-DRAIN VOLTAGE : VSD [V]
Fig.11 Static Drain-Source On-State Resistance vs. Gate Source Voltage 8 Ta=25°C Pulsed STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS(on)[W ] SWITCHING TIME : t [ns] ID= 0.01A 1000
Fig.12 Switching Characteristics Ta=25°C VDD= 30V VGS=10V RG=10W Pulsed
td(off) tf
6
100
4
ID= 0.25A
10
td(on)
tr
2
0 0 2.5 5 7.5 10 GATE-SOURCE VOLTAGE : VGS[V]
1 0.01 0.1 DRAIN-CURRENT : ID[A] 1
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2011.08 - Rev.A
RU1L002SN
Data Sheet
Fig.13 Typical Capacitance vs. Drain-Source Voltage 100 Ta=25°C f=1MHz VGS=0V CAPACITANCE : C [pF] Ciss
10
Crss Coss 1 0.01 0.1 1 10 100 DRAIN-SOURCE VOLTAGE : VDS[V]
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2011.08 - Rev.A
RU1L002SN
Measurement circuits
Data Sheet
Pulse width
VGS ID RL D.U.T. RG VDD VDS
VGS VDS
50% 10% 10% 90% td(on) ton tr
90%
50% 10% 90%
td(off) toff
tf
Fig.1-1 Switching Time Measurement Circuit
Fig.1-2 Switching Waveforms
Notice This product might cause chip aging and breakdown under the large electrified environment. Please consider to design ESD protection circuit.
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2011.08 - Rev.A
Notice
Notes
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R1120A
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