RUB002N02

Data Sheet 1.2V Drive Nch MOSFET RUB002N02  Structure Silicon N-channel MOSFET  Dimensions (Unit : mm) VMN3 0.22 (3) Features 1) High speed switing. 2) Small package(VMN3). 3) Ultra low voltage drive(1.2V drive). 0.1 1.0 0.8 0.1 0.16 (1) (2) 0.17 0.35 0.6 0.37  Application Switching Abbreviated symbol : QR  Packaging specifications Package Code Basic ordering unit (pieces) RUB002N02 Type Taping T2CL 8000   Inner circuit (3) ∗2 ∗1  Absolute maximum ratings (Ta = 25 C) Parameter Drain-source voltage Gate-source voltage Drain current Source current (Body Diode) Power dissipation Channel temperature Range of storage temperature *1 Pw10s, Duty cycle1% *2 Each terminal mounted on a recommended land. Symbol VDSS VGSS Limits 20 8 200 Unit V V mA mA mA mA mW C C (1) Gate (2) Source (3) Drain (1) (2) ∗1 ESD PROTECTION DIODE ∗2 BODY DIODE Continuous Pulsed Continuous Pulsed ID IDP IS ISP PD Tch Tstg *1 800 125 800 150 150 55 to 150 *1 *2  Thermal resistance Parameter Channel to Ambient * Each terminal mounted on a recommended land. Symbol Rth (ch-a)* Limits 833 Unit C / W www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 1/6 2011.04 - Rev.A RUB002N02  Electrical characteristics (Ta = 25 C) Parameter Gate-source leakage Zero gate voltage drain current Gate threshold voltage Symbol IGSS IDSS VGS (th) Min. 20 0.3 Static drain-source on-state resistance * RDS (on) Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time *Pulsed 　 Typ. 0.7 0.8 1.0 1.2 1.6 25 10 10 5 10 15 10 Max. 10 1 1.0 1.0 1.2 1.4 2.4 4.8 S pF pF pF ns ns ns ns  Unit A V A V Conditions VGS=8V, VDS=0V ID=1mA, VGS=0V VDS=20V, VGS=0V VDS=10V, ID=1mA ID=200mA, VGS=4V ID=200mA, VGS=2.5V ID=200mA, VGS=1.8V ID=40mA, VGS=1.5V ID=20mA, VGS=1.2V ID=200mA, VDS=10V VDS=10V VGS=0V f=1MHz ID=150mA, VDD 10V VGS=4V RL=67 RG=10 Data Sheet Drain-source breakdown voltage V (BR)DSS l Yfs l * Ciss Coss Crss td(on) * tr * td(off) * tf * 0.2 - Body diode characteristics (Source-Drain) (Ta = 25C) Parameter Forward Voltage *Pulsed Symbol VSD * Min. - Typ. - Max. 1.2 Unit V Conditions Is=200mA, VGS=0V www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 2/6 2011.04 - Rev.A RUB002N02 Electrical characteristic curves (Ta=25C) Fig.1 Typical Output Characteristics(Ⅰ) 0.5 Ta=25°C Pulsed 0.4 DRAIN CURRENT : ID[A] VGS= 1.5V 　 Data Sheet Fig.2 Typical Output Characteristics(Ⅱ) 0.5 VGS= 2.5V VGS= 1.8V VGS= 1.5V VGS= 1.3V 0.4 DRAIN CURRENT : ID[A] 0.3 VGS= 1.3V 0.2 VGS= 1.2V 0.1 VGS= 4.0V VGS= 2.5V VGS= 1.8V 0.3 VGS= 1.2V 0.2 0.1 Ta=25°C Pulsed 0 0.8 1 0 2 4 6 8 10 0 0 0.2 0.4 0.6 DRAIN-SOURCE VOLTAGE : VDS[V] DRAIN-SOURCE VOLTAGE : VDS[V] Fig.4 Static Drain-Source On-State Resistance vs. Drain Current(Ⅰ) 10000 Ta= 25°C Pulsed STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS(on)[mΩ] VGS= 1.2V VGS= 1.5V VGS= 1.8V VGS= 2.5V VGS= 4.0V 1000 100 0.001 0.01 0.1 1 DRAIN-CURRENT : ID[A] Fig.5 Static Drain-Source On-State Resistance vs. Drain Current(Ⅱ) 10000 VGS= 4.0V Pulsed STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS(on)[mΩ] Ta=125°C Ta=75°C Ta=25°C Ta= -25°C 10000 VGS= 2.5V Pulsed STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS(on)[mΩ] Ta=125°C Ta=75°C Ta=25°C Ta= -25°C Fig.6 Static Drain-Source On-State Resistance vs. Drain Current(Ⅱ) 1000 1000 100 0.001 0.01 0.1 1 100 0.001 DRAIN-CURRENT : ID[A] 0.01 0.1 DRAIN-CURRENT : ID[A] 1 www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 3/6 2011.04 - Rev.A RUB002N02 　 Fig.7 Static Drain-Source On-State Resistance vs. Drain Current(Ⅲ) Fig.8 Static Drain-Source On-State Resistance vs. Drain Current(Ⅳ) 10000 Data Sheet 10000 VGS= 1.8V Pulsed STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS(on)[mΩ] VGS= 1.5V Pulsed STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS(on)[mΩ] 1000 Ta=125°C Ta=75°C Ta=25°C Ta= -25°C 1000 Ta=125°C Ta=75°C Ta=25°C Ta= -25°C 100 0.001 0.01 0.1 1 100 0.001 0.01 0.1 1 DRAIN-CURRENT : ID[A] DRAIN-CURRENT : ID[A] Fig.9 Static Drain-Source On-State Resistance vs. Drain Current(Ⅴ) 10000 VGS= 1.2V Pulsed STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS(on)[mΩ] 1 VDS= 10V Pulsed Fig.10 Forward Transfer Admittance vs. Drain Current FORWARD TRANSFER ADMITTANCE : |Yfs| [S] 1000 Ta=125°C Ta=75°C Ta=25°C Ta= -25°C Ta= -25°C Ta=25°C Ta=75°C Ta=125°C 100 0.001 0.01 0.1 1 0.1 0.01 0.1 DRAIN-CURRENT : ID[A] 1 DRAIN-CURRENT : ID[A] Fig.12 Static Drain-Source On-State Resistance vs. Gate Source Voltage 2.5 ID= 0.2A STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS(ON)[Ω] 2 ID= 0.02A Ta=25°C Pulsed 1.5 1 0.5 0 0 2 4 6 8 GATE-SOURCE VOLTAGE : VGS[V] www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 4/6 2011.04 - Rev.A RUB002N02 　 Data Sheet www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 5/6 2011.04 - Rev.A RUB002N02  Measurement circuits 　 Data Sheet Pulse width VGS ID RL D.U.T. VDS VGS VDS 50% 10% 10% 90% 50% 10% 90% RG VDD td(on) ton 90% tr td(off) toff tf Fig.1-1 Switching Time Measurement Circuit Fig.1-2　Switching Waveforms  Notice This product might cause chip aging and breakdown under the large electrified environment. Please consider to design ESD protection circuit. www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 6/6 2011.04 - Rev.A Notice Notes Thank you for your accessing to ROHM product informations. More detail product informations and catalogs are available, please contact us. ROHM Customer Support System http://www.rohm.com/contact/ www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. R1120A