1.2V Drive Nch MOSFET
RUB002N05
Structure Silicon N-channel MOSFET Dimensions (Unit : mm)
VMN3
0.22
(3)
Features 1) High speed switing. 2) Ultra small package(VMN3). 3) Ultra low voltage drive(1.2V drive).
0.1
1.0 0.8
0.1
0.16
(1)
(2)
0.17 0.35 0.6
0.37
Abbreviated symbol : RH
Application Switching
Packaging specifications Package Code Basic ordering unit (pieces) RUB002N05 Type Taping T2L 8000
Inner circuit
(3)
∗2
Absolute maximum ratings (Ta = 25 C) Parameter Drain-source voltage Gate-source voltage Drain current Source current (Body Diode) Power dissipation Channel temperature Range of storage temperature
*1 Pw10s, Duty cycle1% *2 Each terminal mounted on a recommended land.
∗1
Symbol VDSS VGSS
Limits 50 8 200
*1
Unit V V mA mA mA mA mW C C
(1)
(2)
(1) GATE (2) SOURCE (3) DRAIN
*1 ESD PROTECTION DIODE *2 BODY DIODE
Continuous Pulsed Continuous Pulsed
ID IDP IS ISP PD Tch Tstg
800 125 800 150 150 55 to +150
*1 *2
Thermal resistance Parameter Channel to Ambient
* Each terminal mounted on a recommended land.
Symbol Rth (ch-a)*
Limits 833
Unit C / W
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1/5
2010.11 - Rev.A
RUB002N05
Electrical characteristics (Ta = 25 C) Parameter Gate-source leakage Zero gate voltage drain current Gate threshold voltage Symbol IGSS IDSS VGS (th) Min. 50 0.3 Static drain-source on-state resistance RDS (on) Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time
*Pulsed
Typ. 1.6 1.7 1.9 2.0 2.4 25 6 3 4 6 15 55 Max. 10 1 1.0 2.2 2.4 2.7 4.0 7.2 S pF pF pF ns ns ns ns Unit A V A V Conditions VGS=8V, VDS=0V ID=1mA, VGS=0V VDS=50V, VGS=0V VDS=10V, ID=1mA ID=200mA, VGS=4.5V ID=200mA, VGS=2.5V ID=100mA, VGS=1.8V ID=40mA, VGS=1.5V ID=20mA, VGS=1.2V ID=200mA, VDS=10V VDS=10V VGS=0V f=1MHz ID=100mA, VDD 30V VGS=4.5V RL=300 RG=10
Data Sheet
Drain-source breakdown voltage V (BR)DSS
l Yfs l* Ciss Coss Crss td(on) * tr * td(off) * tf *
0.4 -
Body diode characteristics (Source-Drain) (Ta = 25C) Parameter Forward Voltage
*Pulsed
Symbol VSD *
Min. -
Typ. -
Max. 1.2
Unit V
Conditions Is=200mA, VGS=0V
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2/5
2010.11 - Rev.A
RUB002N05
Electrical characteristics curves
Data Sheet
0.4 DRAIN CURRENT : ID[A] DRAIN CURRENT : ID[A]
VGS= 4.5V VGS= 2.5V VGS=1.8V VGS=1.5V
0.4 DRAIN CURRENT : ID[A]
VGS= 4.5V VGS= 2.5V VGS=1.8V VGS=1.5V
1 Ta=25°C Pulsed
VDS= 10V Pulsed Ta= 125°C Ta= 75°C Ta= 25°C Ta= - 25°C
0.3
Ta=25°C Pulsed VGS= 1.2V
0.3
0.1
0.2
VGS= 1.0V
0.2
VGS=1.2V VGS=1.0V
0.01
0.1
VGS= 0.8V
0.1 VGS=0.8V 0
0 0 0.2 0.4 0.6 0.8 1
0.001 0 2 4 6 8 10 0 0.5 1 1.5 2
DRAIN-SOURCE VOLTAGE : VDS[V] Fig.1 Typical Output Characteristics( Ⅰ)
DRAIN-SOURCE VOLTAGE : VDS[V] Fig.2 Typical Output Characteristics( Ⅱ)
GATE-SOURCE VOLTAGE : VGS[V] Fig.3 Typical Transfer Characteristics
STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS(on)[ ]
STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS(on)[ ]
Ta= 25°C Pulsed
STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS(on)[ ]
100
100 VGS= 4.5V Pulsed 10 Ta=125°C Ta=75°C Ta=25°C Ta= -25°C
100 VGS= 2.5V Pulsed 10 Ta=125°C Ta=75°C Ta=25°C Ta= -25°C
10
VGS=1.2V VGS= 1.5V VGS= 1.8V VGS= 2.5V VGS= 4.5V
1
1
1
0.1 0.01 0.1 DRAIN-CURRENT : ID[A] Fig.4 Static Drain-Source On-State Resistance vs. Drain Current( Ⅰ) 1
0.1 0.01 0.1 DRAIN-CURRENT : ID[A] Fig.5 Static Drain-Source On-State Resistance vs. Drain Current( Ⅱ) 1
0.1 0.01 0.1 DRAIN-CURRENT : ID[A] Fig.6 Static Drain-Source On-State Resistance vs. Drain Current( Ⅲ) 1
STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS(on)[ ]
VGS= 1.8V Pulsed
STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS(on)[ ]
10
Ta=125°C Ta=75°C Ta=25°C Ta= -25°C
VGS= 1.5V Pulsed
STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS(on)[ ]
100
100
100 VGS= 1.2V Pulsed 10
10
Ta=125°C Ta=75°C Ta=25°C Ta= -25°C
1
1
1
Ta=125°C Ta=75°C Ta=25°C Ta= -25°C
0.1 0.01 0.1 DRAIN-CURRENT : ID[A] Fig.7 Static Drain-Source On-State Resistance vs. Drain Current( Ⅳ) 1
0.1 0.01 0.1 DRAIN-CURRENT : ID[A] Fig.8 Static Drain-Source On-State Resistance vs. Drain Current( Ⅴ) 1
0.1 0.01 0.1 DRAIN-CURRENT : ID[A] Fig.9 Static Drain-Source On-State Resistance vs. Drain Current( Ⅵ) 1
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3/5
2010.11 - Rev.A
RUB002N05
Data Sheet
FORWARD TRANSFER ADMITTANCE : |Yfs| [S]
STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS(ON)[Ω]
1 SOURCE CURRENT : Is [A] VDS= 10V Pulsed Ta= -25°C Ta=25°C Ta=75°C Ta=125°C
1 VGS=0V Pulsed
10 9 8 7 6 5 4 3 2 1 0 0 2 4 6 8 ID= 20mA ID=200mA Ta=25°C Pulsed
0.1 Ta=125°C Ta=75°C Ta=25°C Ta=-25°C 0.01
0.1 0.001 0.01 0.1 1
0
0.5
1
1.5
DRAIN-CURRENT : ID[A] Fig.10 Forward Transfer Admittance vs. Drain Current
SOURCE-DRAIN VOLTAGE : VSD [V] Fig.11 Reverse Drain Current vs. Sourse-Drain Voltage
GATE-SOURCE VOLTAGE : VGS[V] Fig.12 Static Drain-Source On-State Resistance vs. Gate Source Voltage
1000 SWITCHING TIME : t [ns] CAPACITANCE : C [pF] Ta=25°C VDD=30V VGS=4.5V RG=10Ω Pulsed
1000 Ta=25°C f=1MHz VGS=0V
tf 100 td(off)
100
Ciss
10 Crss 1 Coss
10
tr
td(on) 1 0.01 0.1 DRAIN-CURRENT : ID[A] Fig.13 Switching Characteristics 1 0.1 0.01 0.1 1 10 100
DRAIN-SOURCE VOLTAGE : VDS[V] Fig.14 Typical Capacitance vs. Drain-Source Voltage
www.rohm.com ©2010 ROHM Co., Ltd. All rights reserved.
4/5
2010.11 - Rev.A
RUB002N05
Measurement circuits
Data Sheet
Pulse width
VGS
ID RL D.U.T.
VDS
VGS VDS
50% 10% 10%
90%
50% 10% 90%
RG
VDD
td(on) ton
90% tr td(off) toff
tf
Fig.1-1 Switching time measurement circuit
Fig.1-2 Switching waveforms
Notice This product might cause chip aging and breakdown under the large electrified environment. Please consider to design ESD protection circuit.
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5/5
2010.11 - Rev.A
Notice
Notes
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R1010A
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