RUE002N02TL

1.2V Drive Nch MOSFET RUE002N02 zStructure Silicon N-channel MOSFET or EMT3 SOT-416 e N co ew m m D es en ig de ns d f zApplications Switching zDimensions (Unit : mm) (1)Source zFeatures 1) Fast switching speed. 2) Low voltage drive (1.2V) makes this device ideal for portable equipment. 3) Drive circuits can be simple. (2)Gate (3)Drain Abbreviated symbol : QR zInner circuit (3) zPackaging specifications Package Type Taping TL Code Basic ordering unit (pieces) RUE002N02 ∗2 (2) 3000 ∗1 (1) ∗1 ESD PROTECTION DIODE ∗2 BODY DIODE (1) Source (2) Gate (3) Drain zAbsolute maximum ratings (Ta=25°C) Symbol Limits Unit Drain-source voltage VDSS 20 V Gate-source voltage VGSS ±8 V ID ±200 mA IDP∗1 ±400 mA PD∗2 150 mW Tch 150 °C Tstg −55 to +150 °C R Parameter Continuous ot Drain current Pulsed Total power dissipation N Channel temperature Range of storage temperature ∗1 Pw≤10µs, Duty cycle≤1% ∗2 Each terminal mounted on a recommended land zThermal resistance Parameter Channel to ambient Symbol Limits Unit Rth(ch-a) ∗ 833 °C / W ∗ Each terminal mounted on a recommended land www.rohm.com c 2009 ROHM Co., Ltd. All rights reserved. ○ 1/4 2009.06 - Rev.A Data Sheet RUE002N02 zElectrical characteristics (Ta=25°C) Drain-source breakdown voltage Zero gate voltage drain current Gate threshold voltage Symbol Min. Typ. Max. Unit IGSS − − ±10 µA VGS=±8V, VDS=0V V(BR)DSS 20 − − V ID=1mA, VGS=0V IDSS − − 1 µA VDS=20V, VGS=0V VGS(th) 0.3 − 1 V VDS=10V, ID=1mA − 0.8 1.2 Ω ID=200mA, VGS=2.5V − 1.0 1.4 Ω ID=200mA, VGS=1.8V − 1.2 2.4 Ω ID=40mA, VGS=1.5V − 1.6 4.8 Ω ID=20mA, VGS=1.2V VDS=10V, ID=200mA ∗ Conditions RDS(on) Forward transfer admittance |Yfs| ∗ 200 − − mS Input capacitance Ciss − 25 − pF VDS=10V Output capacitance Coss − 10 − pF VGS=0V e N co ew m m D es en ig de ns d f Static drain-source on-state resistance Reverse transfer capacitance Crss − 10 − pF f=1MHz Turn-on delay time td(on) ∗ − 5 − ns VDD ∗ − 10 − ns VGS=4.0V td(off) ∗ tf ∗ − 15 − ns RL − 10 − ns RG=10Ω tr Rise time Turn-off delay time Fall time ∗ Pulsed or Parameter Gate-source leakage 10V, ID=150mA 67Ω zBody diode characteristics (Source-drain) (Ta=25°C) Parameter Forward voltage Min. − Typ. − Max. 1.2 Unit V Conditions IS= 100mA, VGS=0V N ot R ∗ Pulsed Symbol VSD ∗ www.rohm.com c 2009 ROHM Co., Ltd. All rights reserved. ○ 2/4 2009.06 - Rev.A Data Sheet RUE002N02 zElectrical characteristics curves 0.5 VGS= 1.5V 0.3 VGS= 1.3V 0.2 VGS= 1.2V VGS= 4.5V VGS= 2.5V VGS= 1.8V 0.1 0.4 DRAIN CURRENT : ID [A] DRAIN CURRENT : ID [A] 0.4 1 VDS=10V Pulsed VGS= 2.5V VGS= 1.8V VGS= 1.3V 0.3 VGS= 1.2V 0.2 VGS= 1.5V 0.1 Ta=25°C Pulsed 0 0 0 0.2 0.4 0.6 0.8 1 0 2 4 6 8 10 0.1 0.01 Ta=125°C 75°C 25°C −25°C 0.001 0.0001 0.00001 0.0 0.5 or Ta=25°C Pulsed DRAIN CURRENT : ID (A) 0.5 1.0 1.5 GATE-SOURCE VOLTAGE : VGS (V) DRAIN-SOURCE VOLTAGE : VDS[V] DRAIN-SOURCE VOLTAGE : VDS[V] Fig.3 Typical transfer characteristics Fig.1 Typical Output Characteristics( Ⅰ) e N co ew m m D es en ig de ns d f VGS= 1.2V VGS= 1.5V VGS= 1.8V VGS= 2.5V VGS= 4.0V STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS(on)[mΩ] Ta= 25°C Pulsed 0.01 0.1 100 0.001 1 0.01 DRAIN-CURRENT : ID [A] STATIC DRAIN-SOURCE ON-STATE RESISTANCE : R DS(on)[mΩ] R 100 0.001 0.01 Ta=125°C Ta=75°C Ta=25°C Ta= -25°C 0.1 1 DRAIN-CURRENT : ID [A] Fig.7 Static Drain-Source On-State Resistance vs. Drain Current( Ⅲ) www.rohm.com c 2009 ROHM Co., Ltd. All rights reserved. ○ Ta=125°C Ta=75°C Ta=25°C Ta= -25°C 0.01 0.1 1 DRAIN-CURRENT : ID [A] Fig.6 Static Drain-Source On-State Resistance vs. Drain Current( Ⅱ) 10000 ot 1000 100 0.001 1 Fig.5 Static Drain-Source On-State Resistance vs. Drain Current( Ⅰ) VGS= 1.8V Pulsed 0.1 DRAIN-CURRENT : ID [A] Fig.4 Static Drain-Source On-State 10000 VGS= 2.5V Pulsed 1000 Resistance vs. Drain Current( Ⅱ) 10000 VGS= 1.5V Pulsed STATIC DRAIN-SOURCE ON-STATE RESISTANCE : R DS(on)[mΩ] 100 0.001 STATIC DRAIN-SOURCE ON-STATE RESISTANCE : R DS(on)[mΩ] Ta=125°C Ta=75°C Ta=25°C Ta= -25°C 1000 1000 N 10000 VGS= 4.0V Pulsed STATIC DRAIN-SOURCE ON-STATE RESISTANCE : R DS(on)[mΩ] 10000 10000 STATIC DRAIN-SOURCE ON-STATE RESISTANCE : R DS(on)[mΩ] Fig.2 Typical Output Characteristics( Ⅱ) VGS= 1.2V Pulsed 1000 1000 Ta=125°C Ta=75°C Ta=25°C Ta= -25°C 100 0.001 0.01 0.1 1 Ta=125°C Ta=75°C Ta=25°C Ta= -25°C 100 0.001 0.01 0.1 1 DRAIN-CURRENT : ID [A] DRAIN-CURRENT : ID [A] Fig.8 Static Drain-Source On-State Resistance vs. Drain Current( Ⅳ) Fig.9 Static Drain-Source On-State Resistance vs. Drain Current( Ⅴ) 3/4 2009.06 - Rev.A Data Sheet RUE002N02 Ta=125°C 75°C 25°C −25°C 0.1 0.01 0.0 0.1 0.01 0.1 STATIC DRAIN-SOURCE ON-STATE RESISTANCE : R DS(ON)[Ω] SOURCE CURRENT : IS (A) Ta= -25°C Ta=25°C Ta=75°C Ta=125°C 2.5 VGS=0V Pulsed 1 0.5 1 2 1.5 1 0.5 ID = 0.02A 0 1.5 0 SOURCE-DRAIN VOLTAGE : VSD (V) 2 DRAIN-CURRENT : ID [A] 10 10 Fig.12 Static Drain-Source On-State Resistance vs. Gate Source Voltage td(off) tf td(on) Ciss 10 Crss Coss tr 1 0.01 8 100 Ta=25°C VDD=10V VGS=4V RG=10Ω Pulsed CAPACITANCE : C [pF] 100 6 e N co ew m m D es en ig de ns d f SWITHING TIME : t (ns) 1000 4 GATE-SOURCE VOLTAGE : VGS[V] Fig.11 Source current vs. source-drain voltage Fig.10 Forward Transfer Admittance vs. Drain Current Ta=25°C Pulsed ID = 0.2A or 1 VDS= 10V Pulsed FORWARD TRANSFER ADMITTANCE : |Yfs| [S] 1 0.1 1 DRAIN CURRENT : ID (A) Ta=25°C f=1MHz VGS=0V 1 0.01 0.1 1 10 100 DRAIN-SOURCE VOLTAGE : VDS[V] Fig.13 Switching characteristics Fig.14 Typical Capacitance vs. Drain-Source Voltage zMeasurement circuit R Pulse width VGS ID D.U.T. RG 90% 50% 10% RL 50% 10% VDS 10% VDD 90% 90% td (on) N ot VGS VDS tr ton Fig.1-1 Switching time measurement circuit tf td (off) toff Fig.1-2 Switching waveforms zNotice This product might cause chip aging and breakdown under the large electrified environment. Please consider to design ESD protection circuit www.rohm.com c 2009 ROHM Co., Ltd. All rights reserved. ○ 4/4 2009.06 - Rev.A Notice Notes No copying or reproduction of this document, in part or in whole, is permitted without the consent of ROHM Co.,Ltd. or The content specified herein is subject to change for improvement without notice. e N co ew m m D es en ig de ns d f The content specified herein is for the purpose of introducing ROHM's products (hereinafter "Products"). If you wish to use any such Product, please be sure to refer to the specifications, which can be obtained from ROHM upon request. Examples of application circuits, circuit constants and any other information contained herein illustrate the standard usage and operations of the Products. The peripheral conditions must be taken into account when designing circuits for mass production. Great care was taken in ensuring the accuracy of the information specified in this document. However, should you incur any damage arising from any inaccuracy or misprint of such information, ROHM shall bear no responsibility for such damage. The technical information specified herein is intended only to show the typical functions of and examples of application circuits for the Products. ROHM does not grant you, explicitly or implicitly, any license to use or exercise intellectual property or other rights held by ROHM and other parties. ROHM shall bear no responsibility whatsoever for any dispute arising from the use of such technical information. The Products specified in this document are intended to be used with general-use electronic equipment or devices (such as audio visual equipment, office-automation equipment, communication devices, electronic appliances and amusement devices). The Products specified in this document are not designed to be radiation tolerant. While ROHM always makes efforts to enhance the quality and reliability of its Products, a Product may fail or malfunction for a variety of reasons. Please be sure to implement in your equipment using the Products safety measures to guard against the possibility of physical injury, fire or any other damage caused in the event of the failure of any Product, such as derating, redundancy, fire control and fail-safe designs. ROHM shall bear no responsibility whatsoever for your use of any Product outside of the prescribed scope or not in accordance with the instruction manual. N ot R The Products are not designed or manufactured to be used with any equipment, device or system which requires an extremely high level of reliability the failure or malfunction of which may result in a direct threat to human life or create a risk of human injury (such as a medical instrument, transportation equipment, aerospace machinery, nuclear-reactor controller, fuel-controller or other safety device). ROHM shall bear no responsibility in any way for use of any of the Products for the above special purposes. If a Product is intended to be used for any such special purpose, please contact a ROHM sales representative before purchasing. If you intend to export or ship overseas any Product or technology specified herein that may be controlled under the Foreign Exchange and the Foreign Trade Law, you will be required to obtain a license or permit under the Law. Thank you for your accessing to ROHM product informations. More detail product informations and catalogs are available, please contact us. ROHM Customer Support System http://www.rohm.com/contact/ www.rohm.com © 2009 ROHM Co., Ltd. All rights reserved. R0039A