RUE002N05_1006

1.2V Drive Nch MOSFET RUE002N05  Structure Silicon N-channel MOSFET  Dimensions (Unit : mm) EMT3 (SC-75A) Features 1) High speed switing. 2) Small package(EMT3). 3)Ultra low voltage drive(1.2V drive). Abbreviated symbol : RH  Application Switching  Packaging specifications Package Code Basic ordering unit (pieces) RUE002N05 Type Taping TL 3000   Inner circuit (3) ∗1 ∗2  Absolute maximum ratings (Ta = 25C) Symbol Parameter Drain-source voltage Gate-source voltage Drain current Source current (Body Diode) Power dissipation Channel temperature Range of storage temperature *1 Pw10s, Duty cycle1% *2 Each terminal mounted on a recommended land. (2) (1) ∗1 BODY DIODE ∗2 ESD PROTECTION DIODE Limits 50 8 200 800 125 800 150 150 55 to +150 Unit V V mA mA mA mA mW C C VDSS Continuous Pulsed Continuous Pulsed VGSS ID IDP *1 IS ISP *1 PD *2 Tch Tstg (1) SOURCE (2) GATE (3) DRAIN  Thermal resistance Parameter Channel to ambient * Each terminal mounted on a recommended land. Symbol Rth (ch-a)* Limits 833 Unit C / W www.rohm.com c ○ 2010 ROHM Co., Ltd. All rights reserved. 1/5 2010.06 - Rev.B RUE002N05 Electrical characteristics (Ta = 25C) Parameter Symbol Data Sheet Min. 50 0.3 - Typ. 1.6 1.7 1.9 2.0 2.4 25 6 3 4 6 15 55 Max. 10 1 1.0 2.2 2.4 2.7 4.0 7.2 - Unit A V A V Conditions VGS=8V, VDS=0V ID=1mA, VGS=0V VDS=50V, VGS=0V VDS=10V, ID=1mA ID=200mA, VGS=4.5V ID=200mA, VGS=2.5V Gate-source leakage Zero gate voltage drain current Gate threshold voltage IGSS IDSS VGS (th) Drain-source breakdown voltage V(BR)DSS Static drain-source on-state resistance * RDS (on) -  ID=100mA, VGS=1.8V ID=40mA, VGS=1.5V ID=20mA, VGS=1.2V Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time *Pulsed l Yfs l * Ciss Coss Crss td(on) * tr * td(off) * tf * 0.4 - S pF pF pF ns ns ns ns ID=200mA, VDS=10V VDS=10V VGS=0V f=1MHz ID=100mA, VDD 30V VGS=4.5V RL=300 RG=10 Body diode characteristics (Source-Drain) (Ta = 25C) Parameter Symbol Min. Typ. Forward voltage VSD * *Pulsed Max. 1.2 Unit V Conditions Is=200mA, VGS=0V www.rohm.com c ○ 2010 ROHM Co., Ltd. All rights reserved. 2/5 2010.06 - Rev.B RUE002N05 Electrical characteristic curves 0.4 DRAIN CURRENT : ID[A] DRAIN CURRENT : ID[A] VGS= 4.5V VGS= 2.5V VGS=1.8V VGS=1.5V Data Sheet 0.4 DRAIN CURRENT : ID[A] VGS= 4.5V VGS= 2.5V VGS=1.8V VGS=1.5V 1 Ta=25°C Pulsed VDS= 10V Pulsed 0.3 Ta=25°C Pulsed VGS= 1.2V 0.3 0.1 0.2 VGS= 1.0V 0.2 VGS=1.2V VGS=1.0V Ta= 125°C Ta= 75°C Ta= 25°C Ta= - 25°C 0.01 0.1 VGS= 0.8V 0.1 VGS=0.8V 0 0 0 0.2 0.4 0.6 0.8 1 0.001 0 2 4 6 8 10 0 0.5 1 1.5 2 DRAIN-SOURCE VOLTAGE : VDS[V] Fig.1 Typical Output Characteristics(Ⅰ) DRAIN-SOURCE VOLTAGE : VDS[V] Fig.2 Typical Output Characteristics(Ⅱ) GATE-SOURCE VOLTAGE : VGS[V] Fig.3 Typical Transfer Characteristics STATIC DRAIN-SOURCE ON-STATE ] RESISTANCE : RDS(on)[ STATIC DRAIN-SOURCE ON-STATE ] RESISTANCE : RDS(on)[ Ta= 25°C Pulsed STATIC DRAIN-SOURCE ON-STATE ] RESISTANCE : RDS(on)[ 100 100 VGS= 4.5V Pulsed 10 Ta=125°C Ta=75°C Ta=25°C Ta= -25°C 100 VGS= 2.5V Pulsed 10 Ta=125°C Ta=75°C Ta=25°C Ta= -25°C 10 VGS=1.2V VGS= 1.5V VGS= 1.8V VGS= 2.5V VGS= 4.5V 1 1 1 0.1 0.01 0.1 DRAIN-CURRENT : ID[A] 1 0.1 0.01 0.1 DRAIN-CURRENT : ID[A] 1 0.1 0.01 0.1 DRAIN-CURRENT : ID[A] 1 Fig.4 Static Drain-Source On-State Resistance vs. Drain Current(Ⅰ) Fig.5 Static Drain-Source On-State Resistance vs. Drain Current(Ⅱ) Fig.6 Static Drain-Source On-State Resistance vs. Drain Current(Ⅲ) STATIC DRAIN-SOURCE ON-STATE ] RESISTANCE : RDS(on)[ STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS(on)[ ] STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS(on)[ ] 100 VGS= 1.8V Pulsed 100 100 10 Ta=125°C Ta=75°C Ta=25°C Ta= -25°C VGS= 1.5V Pulsed 10 Ta=125°C Ta=75°C Ta=25°C Ta= -25°C VGS= 1.2V Pulsed 10 1 1 1 Ta=125°C Ta=75°C Ta=25°C Ta= -25°C 0.1 0.01 0.1 DRAIN-CURRENT : ID[A] 1 0.1 0.01 0.1 DRAIN-CURRENT : ID[A] 1 0.1 0.01 0.1 DRAIN-CURRENT : ID[A] 1 Fig.7 Static Drain-Source On-State Resistance vs. Drain Current(Ⅳ) Fig.8 Static Drain-Source On-State Resistance vs. Drain Current(Ⅴ) Fig.9 Static Drain-Source On-State Resistance vs. Drain Current(Ⅵ) www.rohm.com c ○ 2010 ROHM Co., Ltd. All rights reserved. 3/5 2010.06 - Rev.B RUE002N05 FORWARD TRANSFER ADMITTANCE : |Yfs| [S] Data Sheet STATIC DRAIN-SOURCE ON-STATE ] RESISTANCE : RDS(ON)[ 1 1 10 9 8 7 6 5 4 3 2 1 0 0 5 10 ID= 20mA ID=200mA Ta=25°C Pulsed Ta= -25°C Ta=25°C Ta=75°C Ta=125°C SOURCE CURRENT : Is [A] VDS= 10V Pulsed VGS=0V Pulsed 0.1 Ta=125°C Ta=75°C Ta=25°C Ta=-25°C 0.01 0.1 0.001 0.01 0.1 1 0 0.5 1 1.5 DRAIN-CURRENT : ID[A] Fig.10 Forward Transfer Admittance vs. Drain Current SOURCE-DRAIN VOLTAGE : VSD [V] Fig.11 Reverse Drain Current vs. Sourse-Drain Voltage GATE-SOURCE VOLTAGE : VGS[V] Fig.12 Static Drain-Source On-State Resistance vs. Gate Source Voltage 1000 1000 SWITCHING TIME : t [ns] CAPACITANCE : C [pF] tf 100 td(off) Ta=25°C VDD=30V VGS=4.5V RG=10 Pulsed 100 Ta=25°C f=1MHz VGS=0V Ciss 10 Crss 10 tr 1 Coss td(on) 1 0.01 0.1 DRAIN-CURRENT : ID[A] Fig.13 Switching Characteristics 1 0.1 0.01 0.1 1 10 100 DRAIN-SOURCE VOLTAGE : VDS[V] Fig.14 Typical Capacitance vs. Drain-Source Voltage www.rohm.com c ○ 2010 ROHM Co., Ltd. All rights reserved. 4/5 2010.06 - Rev.B RUE002N05 Measurement circuits Pulse width VGS ID RL D.U.T. RG VDD VDS Data Sheet VGS VDS 50% 10% 10% 90% td(on) ton tr 90% 50% 10% 90% td(off) toff tf Fig.1-1 Switching time measurement circuit Fig.1-2 Switching waveforms Notice This product might cause chip aging and breakdown under the large electrified environment. Please consider to design ESD protection circuit. www.rohm.com c ○ 2010 ROHM Co., Ltd. All rights reserved. 5/5 2010.06 - Rev.B Notice Notes No copying or reproduction of this document, in part or in whole, is permitted without the consent of ROHM Co.,Ltd. The content specified herein is subject to change for improvement without notice. The content specified herein is for the purpose of introducing ROHM's products (hereinafter "Products"). If you wish to use any such Product, please be sure to refer to the specifications, which can be obtained from ROHM upon request. Examples of application circuits, circuit constants and any other information contained herein illustrate the standard usage and operations of the Products. The peripheral conditions must be taken into account when designing circuits for mass production. Great care was taken in ensuring the accuracy of the information specified in this document. However, should you incur any damage arising from any inaccuracy or misprint of such information, ROHM shall bear no responsibility for such damage. The technical information specified herein is intended only to show the typical functions of and examples of application circuits for the Products. ROHM does not grant you, explicitly or implicitly, any license to use or exercise intellectual property or other rights held by ROHM and other parties. ROHM shall bear no responsibility whatsoever for any dispute arising from the use of such technical information. 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