1.8V Drive Nch MOSFET
RUE003N02
Structure Silicon N-channel MOSFET Dimensions (Unit : mm)
EMT3
Features 1) Low on-resistance. 2) Fast switching speed. 3) Low voltage drive (1.8V) makes this device ideal for portable equipment. 4) Drive circuits can be simple. 5) Parallel use is easy.
(1)Source (2)Gate (3)Drain Abbreviated symbol : QT
Applications Switching
Packaging specifications
Package Type Code Basic ordering unit (pieces) RUE003N02 Taping TL 3000
Equivalent circuit
Drain
Gate
∗2
∗1
Source
∗1 ESD PROTECTION DIODE ∗2 BODY DIODE
Absolute maximum ratings (Ta=25C)
Parameter Drain-source voltage Gate-source voltage Drain current Continuous Pulsed Total power dissipation Channel temperature Range of storage temperature Symbol VDSS VGSS ID IDP∗1 PD∗2 Tch Tstg Limits 20 ±8 ±300 ±600 150 150 −55 to +150 Unit V V mA mA mW °C °C
∗1 Pw≤10μs, Duty cycle≤1% ∗2 Each terminal mounted on a recommended land
Thermal resistance
Parameter Channel to ambient
∗ Each terminal mounted on a recommended land
Symbol Rth(ch-a) ∗
Limits 833
Unit °C / W
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c ○ 2011 ROHM Co., Ltd. All rights reserved.
1/3
2011.05 - Rev.B
RUE003N02
Electrical characteristics (Ta=25C)
Parameter Gate-source leakage Drain-source breakdown voltage Zero gate voltage drain current Gate threshold voltage Static drain-source on-state resistance Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time
∗ Pulsed
Data Sheet
Symbol IGSS V(BR)DSS IDSS VGS(th) ∗ RDS(on) |Yfs| ∗ Ciss Coss Crss td(on) ∗ tr ∗ td(off) ∗ tf ∗
Min. − 20 − 0.3 − − − 400 − − − − − − −
Typ. − − − − 0.7 0.8 1.0 − 25 10 10 5 10 15 10
Max. 10 − 1.0 1.0 1.0 1.2 1.4 − − − − − − − −
Unit μA V μA V Ω Ω Ω ms pF pF pF ns ns ns ns
Conditions VGS=±8V, VDS=0V ID=1mA, VGS=0V VDS=20V, VGS=0V VDS=10V, ID=1mA ID=300mA, VGS=4.0V ID=300mA, VGS=2.5V ID=300mA, VGS=1.8V ID=300mA, VDS=10V VDS=10V VGS=0V f=1MHz ID=150mA, VDD VGS=4.0V RL=67Ω RG=10Ω 10V
Body diode characteristics (Source-drain) (Ta=25C)
Parameter Forward voltage
∗ Pulsed
Symbol VSD ∗
Min. −
Typ. −
Max. 1.2
Unit V
Conditions IS= 100mA, VGS=0V
Electrical characteristic curves
STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS(on) (Ω) STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS(on) (Ω)
1 VDS=10V Pulsed
10
VGS=4V Pulsed
10
VGS=2.5V Pulsed
DRAIN CURRENT : ID (A)
0.1
0.01 Ta=125°C 75°C 25°C −25°C
Ta=125°C 75°C 25°C −25°C 1
Ta=125°C 75°C 25°C −25°C 1
0.001
0.0001
0.00001 0.0
0.5
1.0
1.5
0.1 0.01
0.1 DRAIN CURRENT : ID (A)
1
0.1 0.01
0.1 DRAIN CURRENT : ID (A)
1
GATE-SOURCE VOLTAGE : VGS (V)
Fig.1 Typical transfer characteristics
Fig.2 Static drain-source on-state resistance vs. drain current (Ι)
Fig.3 Static drain-source on-state resistance vs. drain current (ΙΙ)
10
STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS(on) (Ω)
VGS=1.8V Pulsed
1
VGS=0V Pulsed
100
SOURCE CURRENT : IS (A)
CAPACITANCE : C (pF)
Ta=125°C 75°C 25°C −25°C 1
Ta=25°C f=1MHZ VGS=0V
0.1
Ta=125°C 75°C 25°C −25°C
Ciss
10
Crss
Coss
0.1 0.01
0.1 DRAIN CURRENT : ID (A)
1
0.01 0.0
0.5
1
1.5
1 0.01
0.1
1
10
100
SOURCE-DRAIN VOLTAGE : VSD (V)
DRAIN-SOURCE VOLTAGE : VDS (V)
Fig.4 Static drain-source on-state resistance vs. drain current (ΙΙΙ)
Fig.5 Source current vs. source-drain voltage
Fig.6 Typical capacitance vs. drain-source voltage
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c ○ 2011 ROHM Co., Ltd. All rights reserved.
2/3
2011.05 - Rev.B
RUE003N02
1000 Ta=25°C VDD=10V VGS=4V RG=10Ω Pulsed
Data Sheet
SWITHING TIME : t (ns)
100
10
td(off) tf td(on) tr
1 0.01
0.1 DRAIN CURRENT : ID (A)
1
Fig.7 Switching characteristics
Switching characteristics measurement circuit
Pulse width
ID VDS D.U.T. RL
VGS
VGS VDS
50% 10% 10%
90% 50%
RG
10% 90% 90%
td (off) tf toff
VDD
td (on) ton tr
Fig.8 Switching time measurement circuit
Fig.9 Switching time waveforms
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c ○ 2011 ROHM Co., Ltd. All rights reserved.
3/3
2011.05 - Rev.B
Notice
Notes
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R1120A
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