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RUL035N02FRATR

RUL035N02FRATR

  • 厂商:

    ROHM(罗姆)

  • 封装:

    SMD6

  • 描述:

    MOSFET N-CH 20V 3.5A TUMT6

  • 数据手册
  • 价格&库存
RUL035N02FRATR 数据手册
RUL035N02 FRA Nch 20V 3.5A Power MOSFET Datasheet zOutline VDSS 20V RDS(on) (Max.) 43m: ID 3.5A PD 1.0W zFeatures (6) TUMT6 (5) (4) (1) (2) (3) zInner circuit 1) Low on - resistance. (1) (2) (3) (4) (5) (6) 2) 1.5V Drive. 3) Built-in G-S Protection Diode. 4) Small Surface Mount Package (TUMT6). 1 ESD PROTECTION DIODE 2 BODY DIODE 5) Pb-free lead plating ; RoHS compliant 6) AEC-Q101 Qualified Drain Drain Gate Source Drain Drain zPackaging specifications Packaging Taping Reel size (mm) zApplication 180 Tape width (mm) DC/DC converters Type 8 Quantity (pcs) 3,000 Taping code TR Marking XD zAbsolute maximum ratings(Ta = 25°C) Parameter Symbol Value Unit Drain - Source voltage VDSS 20 V Continuous drain current ID *1 r3.5 A ID,pulse *2 r7 A VGSS r10 V PD *3 1.0 W PD *4 0.32 W Tj 150 °C Tstg 55 to 150 °C Pulsed drain current Gate - Source voltage Power dissipation Junction temperature Range of storage temperature www.rohm.com © 2013 ROHM Co., Ltd. All rights reserved. 1/11 2019.05 - Rev.C RUL035N02 FRA Data Sheet zThermal resistance Values Parameter Symbol Thermal resistance, junction - ambient Unit Min. Typ. Max. RthJA *3 - - 125 °C/W RthJA *4 - - 391 °C/W zElectrical characteristics(Ta = 25°C) Values Parameter Drain - Source breakdown voltage Breakdown voltage temperature coefficient Symbol V(BR)DSS Conditions VGS = 0V, ID = 1mA ΔV(BR)DSS ID=1mA ΔTj referenced to 25°C Unit Min. Typ. Max. 20 - - V - 20 - mV/°C Zero gate voltage drain current IDSS VDS = 20V, VGS = 0V - - 1 PA Gate - Source leakage current IGSS VGS = r10V, VDS = 0V - - r10 PA Gate threshold voltage VGS (th) VDS = 10V, ID = 1mA 0.3 - 1.0 V Gate threshold voltage temperature coefficient ΔV(GS)th ΔTj ID=1mA referenced to 25°C - 1.9 - mV/°C VGS=4.5V, ID=3.5A - 31 43 VGS=2.5V, ID=3.5A - 38 53 RDS(on) *5 VGS=1.8V, ID=1.8A - 50 70 VGS=1.5V, ID=0.7A - 66 93 VGS=4.5V, ID=3.5A, Tj=125°C - 56 80 f = 1MHz, open drain - 7.5 - : 3.2 8.5 - S Static drain - source on - state resistance Gate input resistannce Transconductance RG gfs *5 VDS=10V, ID=3.5A m: *1 Limited only by maximum temperature allowed. *2 Pw d 10Ps, Duty cycle d 1% *3 Mounted on a seramic board (30×30×0.8mm) *4 Mounted on a FR4 (15×20×0.8mm) *5 Pulsed www.rohm.com © 2013 ROHM Co., Ltd. All rights reserved. 2/11 2019.05 - Rev.C RUL035N02 FRA Data Sheet zElectrical characteristics(Ta = 25°C) Values Parameter Symbol Conditions Unit Min. Typ. Max. Input capacitance Ciss VGS = 0V - 460 - Output capacitance Coss VDS = 10V - 110 - Reverse transfer capacitance Crss f = 1MHz - 60 - VDD 䏡 10V, VGS = 4.5V - 10 - ID = 1.8A - 20 - RL = 5.6: - 40 - RG = 10: - 50 - Turn - on delay time *5 td(on) tr *5 Rise time Turn - off delay time *5 td(off) tf *5 Fall time pF ns zGate Charge characteristics(Ta = 25°C) Values Parameter Symbol Total gate charge Qg *5 Gate - Source charge Qgs *5 Gate - Drain charge Qgd Conditions VDD 䏡 10, ID=3.5A VGS = 4.5V *5 Unit Min. Typ. Max. - 5.7 - - 1.1 - - 0.9 - nC zBody diode electrical characteristics (Source-Drain)(Ta = 25°C) Values Parameter Inverse diode continuous, forward current Forward voltage www.rohm.com © 2013 ROHM Co., Ltd. All rights reserved. Symbol IS *1 VSD *5 Conditions Unit Min. Typ. Max. Ta = 25°C - - 0.8 A VGS = 0V, Is = 0.8A - - 1.2 V 3/11 2019.05 - Rev.C RUL035N02 FRA Data Sheet zElectrical characteristic curves Fig.2 Maximum Safe Operating Area Fig.1 Power Dissipation Derating Curve 100 Operation in this area is limited by RDS(on) ( VGS = 10V 䠅 100 80 60 40 PW = 1ms 1 PW = 10ms DC Operation 0.1 20 Ta=25ºC Single Pulse Mounted on a ceramic board. (30mm 㽢 30mm 㽢 0.8mm) 0.01 0 0 50 100 150 0.1 200 1 10 100 Drain - Source Voltage : VDS [V] Junction Temperature : Tj [rC] Fig.3 Normalized Transient Thermal Resistance vs. Pulse Width Fig.4 Single Pulse Maxmum Power dissipation 1000 10 Ta=25ºC Single Pulse Ta=25ºC Single Pulse 1 top D=1 D=0.5 D=0.1 D=0.05 D=0.01 bottom Signle 0.1 0.01 0.001 0.0001 Rth(ch-a)=125ºC/W Rth(ch-a)(t)=r(t)㽢Rth(ch-a) Mounted on ceramic board (30mm 㽢 30mm 㽢 0.8mm) 0.01 1 Peak Transient Power : P(W) Normalized Transient Thermal Resistance : r(t) PW = 100Ps 10 Drain Current : ID [A] Power Dissipation : PD/PD max. [%] 120 10 1 0.0001 100 Pulse Width : PW [s] www.rohm.com © 2013 ROHM Co., Ltd. All rights reserved. 100 0.01 1 100 Pulse Width : PW [s] 4/11 2019.05 - Rev.C RUL035N02 FRA Data Sheet zElectrical characteristic curves Fig.6 Typical Output Characteristics(II) Fig.5 Typical Output Characteristics(I) Ta=25ºC Pulsed 3 VGS=4.5V VGS=1.8V Drain Current : ID [A] Drain Current : ID [A] VGS=2.5V VGS=1.8V 2 VGS=1.5V 1 VGS=1.3V VGS=1.5V 2 VGS=1.3V 1 VGS=1.2V VGS=1.1V VGS=1.1V 0 0 0 0.2 0.4 0.6 0.8 0 1 2 4 6 8 10 Drain - Source Voltage : VDS [V] Drain - Source Voltage : VDS [V] Fig.8 Typical Transfer Characteristics Fig.7 Breakdown Voltage 㻌 㻌 㻌 vs. Junction Temperature 60 VGS = 0V ID = 1mA pulsed Drain Current : ID [A] Drain - Source Breakdown Voltage : V(BR)DSS [V] Ta=25ºC Pulsed VGS=4.5V VGS=2.5V 3 40 20 0 -50 0 50 100 150 Junction Temperature : Tj [rC] www.rohm.com © 2013 ROHM Co., Ltd. All rights reserved. Gate - Source Voltage : VGS [V] 5/11 2019.05 - Rev.C RUL035N02 FRA Data Sheet zElectrical characteristic curves Fig.9 Gate Threshold Voltage vs. Junction Temperature Fig.10 Transconductance vs. Drain Current 100 VDS= 10V Pulsed VDS = 10V ID = 1mA pulsed Transconductance : gfs [S] Gate Threshold Voltage : VGS(th) [V] 2 1 0 50 100 150 Junction Temperature : Tj [rC] Ta= 25ºC Ta=25ºC Ta=75ºC Ta=125ºC 1 0.1 0.01 0 -50 10 0.1 1 10 Drain Current : ID [A] Fig.11 Drain CurrentDerating Curve Fig.12 Static Drain - Source On - State Resistance vs. Gate Source Voltage 0 Drain Current Dissipation : ID/ID max. (%) 1 0.8 0.6 0.4 0.2 0 -25 0 25 50 75 100 125 150 Static Drain - Source On-State Resistance : RDS(on) [m:] 1.2 Gate - Source Voltage : VGS [V] Junction Temperature : Tj [ºC] www.rohm.com © 2013 ROHM Co., Ltd. All rights reserved. 6/11 2019.05 - Rev.C RUL035N02 FRA Data Sheet zElectrical characteristic curves Fig.13 Static Drain - Source On - State Resistance vs. Drain Current(I) Fig.14 Static Drain - Source On - State Resistance vs. Junction Temperature Static Drain - Source On-State Resistance : RDS(on) [m:] Static Drain - Source On-State Resistance : RDS(on) [m:] 60 Drain Current : ID [A] www.rohm.com © 2013 ROHM Co., Ltd. All rights reserved. 50 40 30 20 VGS = 10V ID=3.5A pulsed 10 0 -50 -25 0 25 50 75 100 125 150 Junction Temperature : Tj [ºC] 7/11 2019.05 - Rev.C RUL035N02 FRA Data Sheet zElectrical characteristic curves Fig.16 Static Drain-Source On-State Resistance vs. Drain Current(III) Static Drain - Source On-State Resistance : RDS(on) [m:] Static Drain - Source On-State Resistance : RDS(on) [m:] Fig.15 Static Drain - Source On - State Resistance vs. Drain Current(II) Drain Current : ID [A] Drain Current : ID [A] Fig.18 Static Drain - Source On - State Resistance vs. Drain Current(V) Static Drain - Source On-State Resistance : RDS(on) [m:] Static Drain - Source On-State Resistance : RDS(on) [m:] Fig.17 Static Drain - Source On - State Resistance vs. Drain Current(IV) Drain Current : ID [A] www.rohm.com © 2013 ROHM Co., Ltd. All rights reserved. Drain Current : ID [A] 8/11 2019.05 - Rev.C RUL035N02 FRA Data Sheet zElectrical characteristic curves Fig.20 Switching Characteristics Capacitance : C [pF] Switching Time : t [ns] Fig.19 Typical Capacitance 㻌 㻌 㻌 㻌 㻌 vs. Drain - Source Voltage Drain - Source Voltage : VDS [V] Drain Current : ID [A] Fig.22 Source Current 㻌 㻌 㻌 㻌 㻌 vs. Source Drain Voltage Source Current : IS [A] Gate - Source Voltage : VGS [V] Fig.21 Dynamic Input Characteristics Source-Drain Voltage : VSD [V] Total Gate Charge : Qg [nC] www.rohm.com © 2013 ROHM Co., Ltd. All rights reserved. 9/11 2019.05 - Rev.C RUL035N02 FRA Data Sheet zMeasurement circuits Fig.1-1 Switching Time Measurement Circuit Fig.1-2䚷Switching Waveforms Fig.2-1 Gate Charge Measurement Circuit Fig.2-2 Gate Charge Waveform www.rohm.com © 2013 ROHM Co., Ltd. All rights reserved. 10/11 2019.05 - Rev.C RUL035N02 FRA Data Sheet zDimensions (Unit : mm) 㻰 㻭 㼑 㼤 㻿 㻭 㻸㼜 㻴㻱 㻱 㻸 TUMT6 㼎 㼏 㼑㻝 㻭 㻭㻞 㼑 㻭㻝 㼘㻝 㼥 㻿 㻿 㼎㻞 Patterm of terminal position areas 㻰㻵㻹 㻭 㻭㻝 㻭㻞 㼎 㼏 㻰 㻱 㼑 㻴㻱 㻸 㻸㼜 㼤 㼥 㻰㻵㻹 㼑㻝 㼎㻞 㼘㻝 㻹㻵㻸㻵㻹㻱㼀㻱㻾㻿 㻹㻵㻺 㻹㻭㼄 㻙 㻜㻚㻤㻡 㻜㻚㻜㻜 㻜㻚㻝㻜 㻜㻚㻣㻞 㻜㻚㻤㻞 㻜㻚㻞㻡 㻜㻚㻠㻜 㻜㻚㻝㻞 㻜㻚㻞㻞 㻝㻚㻥㻜 㻞㻚㻝㻜 㻝㻚㻢㻜 㻝㻚㻤㻜 㻜㻚㻢㻡 㻞㻚㻜㻜 㻞㻚㻞㻜 㻜㻚㻞㻜 㻙 㻜㻚㻠㻜 㻙 㻜㻚㻝㻜 㻙 㻜㻚㻝㻜 㻹㻵㻸㻵㻹㻱㼀㻱㻾㻿 㻹㻵㻺 㻹㻭㼄 㻝㻚㻣㻜 㻙 㻜㻚㻡㻜 㻙 㻜㻚㻡㻜 㻵㻺㻯㻴㻱㻿 㻹㻵㻺 㻙 㻜 㻜㻚㻜㻞㻤 㻜㻚㻜㻝 㻜㻚㻜㻜㻡 㻜㻚㻜㻣㻡 㻜㻚㻜㻢㻟 㻹㻭㼄 㻜㻚㻜㻟㻟 㻜㻚㻜㻜㻠 㻜㻚㻜㻟㻞 㻜㻚㻜㻝㻢 㻜㻚㻜㻜㻥 㻜㻚㻜㻤㻟 㻜㻚㻜㻣㻝 㻜㻚㻜㻟 㻜㻚㻜㻣㻥 㻜㻚㻜㻤㻣 㻜㻚㻜㻝 㻙 㻙 㻙 㻜㻚㻜㻝㻢 㻜㻚㻜㻜㻠 㻜㻚㻜㻜㻠 㻵㻺㻯㻴㻱㻿 㻹㻵㻺 㻹㻭㼄 㻜㻚㻜㻢㻣 㻙 㻙 㻜㻚㻜㻞 㻜㻚㻜㻞 Dimension in mm/inches www.rohm.com © 2013 ROHM Co., Ltd. All rights reserved. 11/11 2019.05 - Rev.C
RUL035N02FRATR 价格&库存

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RUL035N02FRATR
  •  国内价格 香港价格
  • 3000+1.563363000+0.18706
  • 6000+1.433246000+0.17149
  • 9000+1.366939000+0.16355
  • 15000+1.2924415000+0.15464
  • 21000+1.2483221000+0.14936
  • 30000+1.2054630000+0.14423

库存:245

RUL035N02FRATR
    •  国内价格
    • 5+5.87164
    • 50+3.69860
    • 100+2.42139
    • 200+2.41252
    • 500+2.03113

    库存:600

    RUL035N02FRATR
    •  国内价格 香港价格
    • 1+6.608381+0.79068
    • 10+4.1175310+0.49266
    • 100+2.65435100+0.31759
    • 500+2.02470500+0.24226
    • 1000+1.821621000+0.21796

    库存:245