RUR040N02

RUR040N02 Transistors 1.5V Drive Nch MOSFET RUR040N02 Structure Silicon N-channel MOSFET Dimensions (Unit : mm) TSMT3 Features 1) 1.5V drive 2) Low On-resistance. 3) Built-in G-S Protection Diode. 4) Small Surface Mount Package (TSMT3). (1) Gate (2) Source (3) Drain Each lead has same dimensions Abbreviated symbol : XF Application Switching Equivalent circuit Taping TL 3000 (1) ∗1 ∗2 (3) Packaging specifications Package Type RUR040N02 Code Basic ordering unit (pieces) (2) ∗1 ESD PROTECTION DIODE ∗2 BODY DIODE (1) Gate (2) Source (3) Drain Absolute maximum ratings (Ta=25°C) Parameter Drain-source voltage Gate-source voltage Drain current Source current (Body diode) Continuous Pulsed Continuous Pulsed Symbol VDSS VGSS ID IDP ∗1 IS ISP ∗1 PD ∗2 Tch Tstg Limits 20 ±10 ±4.0 ±8.0 0.8 8.0 1.0 150 −55 to +150 Unit V V A A A A W °C °C Total power dissipation Channel temperature Range of storage temperature ∗1 Pw≤10µs, Duty cycle≤1% ∗2 Mounted on a ceramic board Thermal resistance Parameter Channel to ambient ∗ Mounted on a ceramic board Symbol Rth (ch-a) ∗ Limits 125 Unit °C / W 1/4 RUR040N02 Transistors Electrical characteristics (Ta=25°C) Parameter Symbol IGSS Gate-source leakage Drain-source breakdown voltage V(BR) DSS IDSS Zero gate voltage drain current Gate threshold voltage VGS (th) Static drain-source on-state resistance Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Total gate charge Gate-source charge Gate-drain charge ∗Pulsed RDS (on) ∗ ∗ Min. − 20 − 0.3 − − − − 5.0 − − − − − − − − − − Typ. − − − − 25 33 42 55 − 680 150 90 10 30 50 60 8 1.8 1.3 Max. ±10 − 1 1.3 35 46 59 110 − − − − − − − − − − − Unit µA V µA V mΩ mΩ mΩ mΩ S pF pF pF ns ns ns ns nC nC nC Conditions VGS=±10V, VDS=0V ID= 1mA, VGS=0V VDS= 20V, VGS=0V VDS= 10V, ID= 1mA ID= 4.0A, VGS= 4.5V ID= 4.0A, VGS= 2.5V ID= 2.0A, VGS= 1.8V ID= 0.8A, VGS= 1.5V VDS= 10V, ID= 4.0A VDS= 10V VGS=0V f=1MHz ID= 2.0A, VDD 10V VGS= 4.5V RL 5Ω, RG=10Ω ID= 4.0A, VDD 10V VGS= 4.5V RL 2.5Ω, RG=10Ω Yfs Ciss Coss Crss td (on) tr td (off) tf Qg Qgs Qgd ∗ ∗ ∗ ∗ ∗ ∗ ∗ Body diode characteristics (Source-drain) (Ta=25°C) Parameter Forward voltage ∗Pulsed Symbol VSD ∗ Min. − Typ. − Max. 1.2 Unit V Conditions IS= 0.8A, VGS=0V 2/4 RUR040N02 Transistors Electrical characteristic curves STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS (on) (mΩ) STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS (on) (mΩ) 10 VDS=10V Pulsed 1000 VGS=4.5V Pulsed 1000 VGS=2.5V Pulsed DRAIN CURRENT : ID (A) 1 0.1 Ta=125°C Ta=75°C Ta=25°C Ta=−25°C 100 Ta=125°C Ta=75°C Ta=25°C Ta=−25°C 100 Ta=125°C Ta=75°C Ta=25°C Ta=−25°C 0.01 0.001 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 10 0.01 0.1 1 10 10 0.01 0.1 1 10 GATE-SOURCE VOLTAGE : VGS (V) DRAIN CURRENT : ID (A) DRAIN CURRENT : ID (A) Fig.1 Typical Transfer Characteristics Fig.2 Static Drain-Source On-State Resistance vs. Drain Current (Ι) Fig.3 Static Drain-Source On-State Resistance vs. Drain Current (ΙΙ) STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS (on) (mΩ) STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS (on) (mΩ) VGS=1.8V Pulsed VGS=1.5V Pulsed Ta=125°C Ta=75°C Ta=25°C Ta=−25°C STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS (on) (mΩ) 1000 1000 1000 Ta=25°C Pulsed 100 Ta=125°C Ta=75°C Ta=25°C Ta=−25°C 100 100 VGS=1.5V VGS=1.8V VGS=2.5V VGS=4.5V 10 0.01 0.1 1 10 10 0.01 0.1 1 10 10 0.01 0.1 1 10 DRAIN CURRENT : ID (A) DRAIN CURRENT : ID (A) DRAIN CURRENT : ID (A) Fig.4 Static Drain-Source On-State Resistance vs. Drain Current (ΙΙΙ) Fig.5 Static Drain-Source On-State Resistance vs. Drain Current (Ι ) Fig.6 Static Drain-Source On-State Resistance vs. Drain Current ( ) STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS (on) (mΩ) 100 ID=4.0A 80 ID=2.0A Ta=25°C Pulsed 10 SOURCE CURRENT : IS (A) 1 CAPACITANCE : C (pF) Ta=125°C Ta=75°C Ta=25°C Ta=−25°C VGS=0V Pulsed 10000 Ta=25°C f=1MHz VGS=0V 1000 Ciss 60 40 0.1 100 Coss Crss 20 0 0 5 10 0.01 0.0 0.5 1.0 1.5 10 0.01 0.1 1 10 100 GATE-SOURCE VOLTAGE : VGS (V) SOURCE-DRAIN VOLTAGE : VSD (V) DRAIN-SOURCE VOLTAGE : VDS (V) Fig.7 Static Drain-Source On-State Resistance vs. Gate-Source Voletage Fig.8 Source Current vs. Source-Drain Voltage Fig.9 Typical Capacitance vs. Drain-Source Voltage 3/4 RUR040N02 Transistors 10000 6 GATE-SOURCE VOLTAGE : VGS (V) SWITCHING TIME : t (ns) 1000 Ta=25°C VDD=10V VGS=4.5V RG=10Ω Pulsed tf 100 4 Ta=25°C VDD=10V ID=4.0V RG=10Ω Pulsed FORWARD TRANSFER ADMITTANCE Yfs (S) 100 VDS=10V Pulsed Ta=−25°C Ta=25°C Ta=75°C Ta=125°C 10 td(off) 10 1 td(on) tr 2 1 0.01 0 0.1 1 10 0 1 2 3 4 5 6 7 8 9 10 11 0.1 0.01 0.1 1 10 DRAIN CURRENT : ID (A) DRAIN CURRENT : ID (A) TOTAL GATE CHARGE : Qg (nC) Fig.10 Switching Characteristics Fig.11 Dynamic Input Characteristics Fig.12 Forward Transfer Admittance vs. Drain Current Measurement circuits Pulse Width VGS ID RL D.U.T. VDS VGS VDS 50% 10% 10% 90% 50% 10% RG VDD td(on) ton 90% tr td(off) toff 90% tr Fig.13 Switching Time Test Circuit Fig.14 Switching Time Waveforms VG VGS ID RL VDS VGS Qgs Qg IG (Const.) D.U.T. RG VDD Qgd Charge Fig.15 Gate Charge Test Circuit Fig.16 Gate Charge Waveform 4/4 Appendix Notes No technical content pages of this document may be reproduced in any form or transmitted by any means without prior permission of ROHM CO.,LTD. The contents described herein are subject to change without notice. The specifications for the product described in this document are for reference only. Upon actual use, therefore, please request that specifications to be separately delivered. Application circuit diagrams and circuit constants contained herein are shown as examples of standard use and operation. Please pay careful attention to the peripheral conditions when designing circuits and deciding upon circuit constants in the set. Any data, including, but not limited to application circuit diagrams information, described herein are intended only as illustrations of such devices and not as the specifications for such devices. ROHM CO.,LTD. disclaims any warranty that any use of such devices shall be free from infringement of any third party's intellectual property rights or other proprietary rights, and further, assumes no liability of whatsoever nature in the event of any such infringement, or arising from or connected with or related to the use of such devices. Upon the sale of any such devices, other than for buyer's right to use such devices itself, resell or otherwise dispose of the same, no express or implied right or license to practice or commercially exploit any intellectual property rights or other proprietary rights owned or controlled by ROHM CO., LTD. is granted to any such buyer. Products listed in this document are no antiradiation design. The products listed in this document are designed to be used with ordinary electronic equipment or devices (such as audio visual equipment, office-automation equipment, communications devices, electrical appliances and electronic toys). Should you intend to use these products with equipment or devices which require an extremely high level of reliability and the malfunction of which would directly endanger human life (such as medical instruments, transportation equipment, aerospace machinery, nuclear-reactor controllers, fuel controllers and other safety devices), please be sure to consult with our sales representative in advance. It is our top priority to supply products with the utmost quality and reliability. However, there is always a chance of failure due to unexpected factors. Therefore, please take into account the derating characteristics and allow for sufficient safety features, such as extra margin, anti-flammability, and fail-safe measures when designing in order to prevent possible accidents that may result in bodily harm or fire caused by component failure. ROHM cannot be held responsible for any damages arising from the use of the products under conditions out of the range of the specifications or due to non-compliance with the NOTES specified in this catalog. Thank you for your accessing to ROHM product informations. More detail product informations and catalogs are available, please contact your nearest sales office. ROHM Customer Support System www.rohm.com Copyright © 2008 ROHM CO.,LTD. THE AMERICAS / EUROPE / ASIA / JAPAN Contact us : webmaster@ rohm.co. jp 21 Saiin Mizosaki-cho, Ukyo-ku, Kyoto 615-8585, Japan TEL : +81-75-311-2121 FAX : +81-75-315-0172 Appendix1-Rev2.0