RW1A025APT2CR

Data Sheet 1.5V Drive Pch MOSFET RW1A025AP  Structure Silicon P-channel MOSFET  Dimensions (Unit : mm) WEMT6 Features 1) Low On-resistance. 2) Small high power package. 3) Low voltage drive.(1.5V) (6) (5) (4) (1) (2) (3) Abbreviated symbol : SD  Application Switching  Packaging specifications Type  Inner circuit Package Code Taping T2CR Basic ordering unit (pieces) RW1A025AP (6) 8000  Parameter Drain current Source current (Body Diode) Symbol Limits Unit VDSS 12 V VGSS 0 to 8 V Continuous ID 2.5 A Pulsed Continuous IDP IS *1 7.5 0.5 A A ISP *1 7.5 A PD *2 0.7 W Tch Tstg 150 55 to 150 C C Symbol Limits Unit Rth (ch-a)* 179 C / W Gate-source voltage Pulsed Power dissipation Channel temperature Range of storage temperature (4) ∗2  Absolute maximum ratings (Ta = 25C) Drain-source voltage (5) (1) Drain (2) Drain (3) Gate (4) Source (5) Drain (6) Drain ∗1 (1) (2) (3) ∗1 ESD PROTECTION DIODE ∗2 BODY DIODE *1 Pw10s, Duty cycle1% *2 Mounted on a ceramic board.  Thermal resistance Parameter Channel to Ambient *Mounted on a ceramic board. www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 1/6 2011.04 - Rev.A Data Sheet 　 RW1A025AP  Electrical characteristics (Ta = 25C) Parameter Gate-source leakage Symbol Zero gate voltage drain current Typ. Max. Unit Conditions - - 10 A VGS=8V, VDS=0V 12 - - V ID=1mA, VGS=0V IDSS - - 10 A VDS=12V, VGS=0V VGS (th) 0.3 - 1.0 V VDS=6V, ID=1mA - 44 62 IGSS Drain-source breakdown voltage V(BR)DSS Gate threshold voltage Min. ID=2.5A, VGS=4.5V Static drain-source on-state resistance * RDS (on) - 55 77 - 75 110 - 90 180 Forward transfer admittance l Yfs l * 3.5 - - S ID=2.5A, VDS=6V Input capacitance Ciss - 2000 - pF VDS=6V m ID=1.2A, VGS=2.5V ID=1.2A, VGS=1.8V ID=0.5A, VGS=1.5V Output capacitance Coss - 130 - pF VGS=0V Reverse transfer capacitance Crss - 120 - pF f=1MHz Turn-on delay time td(on) * - 11 - ns ID=1.2A, VDD 6V tr * - 40 - ns VGS=4.5V td(off)* - 160 - ns RL=5 Rise time Turn-off delay time tf * - 60 - ns RG=10 Total gate charge Qg * - 16 - nC ID=2.5A Gate-source charge Gate-drain charge Qgs * Qgd * - 2.4 2.2 - nC nC VDD 6V VGS=4.5V Fall time *Pulsed Body diode characteristics (Source-Drain) (Ta = 25C) Parameter Forward Voltage Symbol VSD * Min. Typ. Max. Unit - - 1.2 V Conditions Is=2.5A, VGS=0V *Pulsed www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 2/6 2011.04 - Rev.A Data Sheet 　 RW1A025AP Electrical characteristic curves (Ta=25C) Fig.1 Typical output characteristics(Ⅰ) Fig.2 Typical output characteristics(Ⅱ) 2.5 2.5 1.5 VGS= -1.2V 1 1.5 VGS= -4.5V VGS= -2.5V VGS= -1.8V VGS= -1.5V 1 0.5 0.5 VGS= -1.0V VGS= -1.0V 0 0 0 0.2 0.4 0.6 0.8 0 1 2 4 6 8 10 DRAIN-SOURCE VOLTAGE : -VDS[V] DRAIN-SOURCE VOLTAGE : -VDS[V] Fig.4 Static Drain-Source On-State Resistance vs. Drain Current(Ⅰ) Fig.3 Typical Transfer Characteristics 10 1000 VDS= -6V Pulsed Ta=25°C pulsed STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS(ON)[mΩ] 1 DRAIN CURRENT : -ID[A] Ta=25°C pulsed VGS= -1.2V 2 DRAIN CURRENT : -ID[A] 2 DRAIN CURRENT : -ID[A] Ta=25°C pulsed VGS= -4.5V VGS= -2.5V VGS= -1.8V VGS= -1.5V Ta=125°C Ta=75°C Ta=25°C Ta=-25°C 0.1 0.01 0.001 VGS= -1.5V VGS= -1.8V VGS= -2.5V VGS= -4.5V 100 10 0 0.5 1 1.5 0.1 1 10 DRAIN-CURRENT : -ID[A] GATE-SOURCE VOLTAGE : -VGS[V] Fig.5 Static Drain-Source On-State Resistance vs. Drain Current(Ⅱ) Fig.6 Static Drain-Source On-State Resistance vs. Drain Current(Ⅲ) 1000 1000 VGS= -2.5V Pulsed VGS= -4.5V Pulsed STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS(ON)[mΩ] STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS(ON)[mΩ] Ta=125°C Ta=75°C Ta=25°C Ta=-25°C 100 10 Ta=125°C Ta=75°C Ta=25°C Ta=-25°C 100 10 0.1 1 10 0.1 www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 1 10 DRAIN-CURRENT : -ID[A] DRAIN-CURRENT : -ID[A] 3/6 2011.04 - Rev.A Data Sheet 　 RW1A025AP Fig.7 Static Drain-Source On-State Resistance vs. Drain Current(Ⅳ) Fig.8 Static Drain-Source On-State Resistance vs. Drain Current(Ⅴ) 1000 VGS= -1.8V Pulsed Ta=125°C Ta=75°C Ta=25°C Ta=-25°C STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS(ON)[mΩ] STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS(ON)[mΩ] 1000 100 10 Ta=125°C Ta=75°C Ta=25°C Ta=-25°C 100 10 0.1 1 10 0.1 1 DRAIN-CURRENT : -ID[A] Fig.9 Forward Transfer Admittance vs. Drain Current Fig.10 Reverse Drain Current vs. Sourse-Drain Voltage 10 VGS=0V Pulsed REVERSE DRAIN CURRENT : -Is [A] VDS= -6V Pulsed 10 Ta=125°C Ta=75°C Ta=25°C Ta=-25°C 1 1 Ta=125°C Ta=75°C Ta=25°C Ta=-25°C 0.1 0.01 0.001 0.1 0.1 1 0 10 0.5 1 1.5 SOURCE-DRAIN VOLTAGE : -VSD [V] DRAIN-CURRENT : -ID[A] Fig.11 Static Drain-Source On-State Resistance vs. Gate Source Voltage Fig.12 Switching Characteristics 1000 150 Ta=25°C pulsed ID= -1.25A 100 Ta=25°C VDD= -6V VGS=-4.5V RG=10W Pulsed td(off) SWITCHING TIME : t [ns] STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS(ON)[mΩ] 10 DRAIN-CURRENT : -ID[A] 100 FORWARD TRANSFER ADMITTANCE : |Yfs| VGS= -1.5V Pulsed ID= -2.5A 50 100 tf 10 td(on) tr 1 0 0 2 4 6 0.01 8 www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 0.1 1 10 100 DRAIN-CURRENT : -ID[A] GATE-SOURCE VOLTAGE : -VGS[V] 4/6 2011.04 - Rev.A Data Sheet 　 RW1A025AP Fig.13 Typical Capacitance vs. Drain-Source Voltage Fig.12 Dynamic Input Characteristics 5 10000 4 CAPACITANCE : C [pF] GATE-SOURCE VOLTAGE : -VGS [V] Ciss 3 2 1000 100 Coss Ta=25°C VDD= -6V ID= -2.5A Pulsed 1 Crss Ta=25°C f=1MHz VGS=0V 10 0 0 5 10 15 0.01 20 www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 0.1 1 10 100 DRAIN-SOURCE VOLTAGE : -VDS[V] TOTAL GATE CHARGE : Qg [nC] 5/6 2011.04 - Rev.A Data Sheet 　 RW1A025AP  Measurement circuits Pulse Width VGS ID VDS VGS 10% 50% 90% RL 50% 10% D.U.T. 10% RG VDD VDS 90% td(on) tr ton 90% td(off) tf toff Fig.1-2　Switching Waveforms Fig.1-1 Switching Time Measurement Circuit VG ID VDS VGS RL IG(Const.) D.U.T. Qg VGS Qgs Qgd VDD Charge Fig.2-1 Gate Charge Measurement Circuit Fig.2-2 Gate Charge Waveform  Notice This product might cause chip aging and breakdown under the large electrified environment. Please consider to design ESD protection circuit. www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 6/6 2011.04 - Rev.A Notice Notes Thank you for your accessing to ROHM product informations. More detail product informations and catalogs are available, please contact us. ROHM Customer Support System http://www.rohm.com/contact/ www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. R1120A