RW1A030AP

Data Sheet 1.5V Drive Pch MOSFET RW1A030AP  Structure Silicon P-channel MOSFET  Dimensions (Unit : mm) WEMT6 Features 1) Low On-resistance. 2) Small high power package. 3) Low voltage drive.(1.5V) (6) (5) (4) (1) (2) (3) Abbreviated symbol : SB  Application Switching  Packaging specifications Type Package Code Taping T2CR 8000   Inner circuit (6) (5) (4) Basic ordering unit (pieces) RW1A030AP ∗2  Absolute maximum ratings (Ta = 25 C) Parameter Drain-source voltage Gate-source voltage Drain current Source current (Body Diode) Power dissipation Channel temperature Range of storage temperature *1 Pw10s, Duty cycle1% *2 Mounted on a ceramic board. Symbol VDSS VGSS Limits 12 0 to 8 3 *1 Unit V V A A A A W C C (1) Drain (2) Drain (3) Gate (4) Source (5) Drain (6) Drain ∗1 (1) (2) (3) ∗1 ESD PROTECTION DIODE ∗2 BODY DIODE Continuous Pulsed Continuous Pulsed ID IDP IS ISP PD Tch Tstg 12 0.5 12 0.7 150 55 to 150 *1 *2  Thermal resistance Parameter Channel to Ambient *Mounted on a ceramic board. Symbol Rth (ch-a)* Limits 179 Unit C / W www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 1/6 2011.03 - Rev.A RW1A030AP  Electrical characteristics (Ta = 25 C) Parameter Gate-source leakage Zero gate voltage drain current Gate threshold voltage Static drain-source on-state resistance Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Total gate charge Gate-source charge Gate-drain charge *Pulsed 　 Symbol IGSS IDSS VGS (th) * RDS (on) Min. 12 0.3 l Yfs l * Ciss Coss Crss td(on) * tr * td(off) * tf * Qg * Qgs * Qgd * 3.8 Typ. 30 40 55 75 2700 170 150 10 30 240 75 22 3.9 3.1 Max. 10 10 1.0 42 56 82 150 S pF pF pF ns ns ns ns nC nC nC m Unit A V A V Conditions VGS=8V, VDS=0V ID=1mA, VGS=0V VDS=12V, VGS=0V VDS=6V, ID=1mA ID=3A, VGS=4.5V ID=1.5A, VGS=2.5V ID=1.5A, VGS=1.8V ID=0.6A, VGS=1.5V ID=3A, VDS=6V VDS=6V VGS=0V f=1MHz ID=1.5A, VDD 6V VGS=4.5V RL=4 RG=10 ID=3A VDD 6V VGS=4.5V Data Sheet Drain-source breakdown voltage V(BR)DSS Body diode characteristics (Source-Drain) (Ta = 25C) Parameter Forward Voltage *Pulsed Symbol VSD * Min. - Typ. - Max. 1.2 Unit V Conditions Is=3A, VGS=0V www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 2/6 2011.03 - Rev.A RW1A030AP Electrical characteristic curves (Ta=25C) Fig.1 Typical Output Characteristics(Ⅰ) 10 VGS= -4.5V 8 DRAIN CURRENT : -ID[A] VGS= -2.5V 　 Data Sheet Fig.2 Typical Output Characteristics(Ⅱ) 10 VGS= -1.8V 8 DRAIN CURRENT : -ID[A] VGS= -1.8V 6 VGS= -1.5V 4 Ta=25°C Pulsed VGS= -1.2V 0 0 0.2 0.4 0.6 0.8 1 DRAIN-SOURCE VOLTAGE : -VDS[V] VGS= -4.5V VGS= -2.5V VGS= -1.5V 6 4 Ta=25°C Pulsed VGS= -1.2V 2 2 0 0 2 4 6 8 10 DRAIN-SOURCE VOLTAGE : -VDS[V] Fig.3 Typical Transfer Characteristics 10 VDS= -6V Pulsed 1 STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS(on)[mΩ] 1000 Fig.4 Static Drain-Source On-State Resistance vs. Drain Current(Ⅰ) Ta=25°C Pulsed VGS= -1.5V VGS= -1.8V VGS= -2.5V VGS= -4.5V DRAIN CURRENT : -ID[A] 0.1 Ta=125°C Ta=75°C Ta=25°C Ta= -25°C 100 0.01 0.001 0 0.5 1 1.5 2 GATE-SOURCE VOLTAGE : -VGS[V] 10 0.1 1 DRAIN-CURRENT : -ID[A] 10 Fig.5 Static Drain-Source On-State Resistance vs. Drain Current(Ⅱ) 1000 VGS= -4.5V Pulsed STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS(on)[mΩ] STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS(on)[mΩ] 1000 Fig.6 Static Drain-Source On-State Resistance vs. Drain Current(Ⅱ) VGS= -2.5V Pulsed Ta=125°C Ta=75°C Ta=25°C Ta= -25°C 100 Ta=125°C Ta=75°C Ta=25°C Ta= -25°C 100 10 0.1 1 DRAIN-CURRENT : -ID[A] 10 10 0.1 1 DRAIN-CURRENT : -ID[A] 10 www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 3/6 2011.03 - Rev.A RW1A030AP Fig.7 Static Drain-Source On-State Resistance vs. Drain Current(Ⅲ) 　 Fig.8 Static Drain-Source On-State Resistance vs. Drain Current(Ⅳ) 1000 STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS(on)[mΩ] Data Sheet 1000 STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS(on)[mΩ] VGS= -1.8V Pulsed Ta=125°C Ta=75°C Ta=25°C Ta= -25°C VGS= -1.5V Pulsed Ta=125°C Ta=75°C Ta=25°C Ta= -25°C 100 100 10 0.1 1 DRAIN-CURRENT : -ID[A] 10 10 0.1 1 DRAIN-CURRENT : -ID[A] Fig.10 Reverse Drain Current vs. Sourse-Drain Voltage 10 Fig.9 Forward Transfer Admittance vs. Drain Current 10 FORWARD TRANSFER ADMITTANCE : |Yfs| [S] VDS= -6V Pulsed SOURCE CURRENT : -Is [A] 10 VGS=0V Pulsed 1 1 Ta=125°C Ta=75°C Ta=25°C Ta= -25°C 0.1 Ta=125°C Ta=75°C Ta=25°C Ta= -25°C 0.1 0.01 0.01 0.1 1 10 0 0.5 1 1.5 DRAIN-CURRENT : -ID[A] SOURCE-DRAIN VOLTAGE : -VSD [V] Fig.11 Static Drain-Source On-State Resistance vs. Gate Source Voltage 150 Ta=25°C Pulsed ID= -1.5A 100 ID= -3.0A SWITCHING TIME : t [ns] 100 1000 td(off Fig.12 Switching Characteristics tf STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS(ON)[mΩ] Ta=25°C VDD= -6V VGS= -4.5V RG=10W Pulsed td(on) 50 10 tr 0 0 2 4 6 8 GATE-SOURCE VOLTAGE : -VGS[V] 1 0.01 0.1 1 10 100 DRAIN-CURRENT : -ID[A] www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 4/6 2011.03 - Rev.A RW1A030AP 　 Fig.14 Typical Capacitance vs. Drain-Source Voltage 10000 Data Sheet Fig.13 Dynamic Input Characteristics 5 GATE-SOURCE VOLTAGE : -VGS [V] 4 CAPACITANCE : C [pF] Ciss 1000 3 2 Ta=25°C VDD= -6V ID= -3.0A Pulsed 0 5 10 15 20 25 30 Crss 100 Coss Ta=25°C f=1MHz VGS=0V 10 0.01 0.1 1 10 100 1 0 TOTAL GATE CHARGE : Qg [nC] DRAIN-SOURCE VOLTAGE : -VDS[V] www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 5/6 2011.03 - Rev.A RW1A030AP  Measurement circuits 　 Data Sheet Pulse Width VGS ID RL D.U.T. VDS VGS 10% 50% 10% 90% 50% 10% 90% RG VDD VDS td(on) ton 90% tr td(off) toff tf Fig.1-1 Switching Time Measurement Circuit Fig.1-2　Switching Waveforms VG ID VGS RL IG(Const.) D.U.T. VDD VDS Qg VGS Qgs Qgd Charge Fig.2-1 Gate Charge Measurement Circuit Fig.2-2 Gate Charge Waveform  Notice This product might cause chip aging and breakdown under the large electrified environment. Please consider to design ESD protection circuit. www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 6/6 2011.03 - Rev.A Notice Notes Thank you for your accessing to ROHM product informations. More detail product informations and catalogs are available, please contact us. ROHM Customer Support System http://www.rohm.com/contact/ www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. R1120A