RW1E015RP

4V Drive Pch MOSFET RW1E015RP Structure Silicon P-channel MOSFET Features 1) Low on-resistance. 2) Space saving, high power package. 3) Low voltage drive. (4V) (1) (2) (3) Dimensions (Unit : mm) WEMT6 (6) (5) (4) Applications Switching Inner circuit (6) Abbreviated symbol : UJ (5) (4) Packaging specifications Package Type Code Basic ordering unit (pieces) RW1E015RP (1) Drain (2) Drain (3) Gate (4) Source (5) Drain (6) Drain Taping T2R 8000 ∗2 ∗1 (1) (2) (3) Absolute maximum ratings (Ta=25°C) Parameter Drain-source voltage Gate-source voltage Drain current Source current (Body diode) Total power dissipation Channel temperature Range of Storage temperature ∗1 Pw≤10µs, Duty cycle≤1% ∗2 When mounted on a ceramic board ∗1 ESD PROTECTION DIODE ∗2 BODY DIODE Continuous Pulsed Continuous Pulsed Symbol VDSS VGSS ID IDP IS ISP PD Tch Tstg ∗1 ∗1 ∗2 Limits −30 ±20 ±1.5 ±6 −0.5 −6 0.7 150 −55 to +150 Unit V V A A A A W °C °C Thermal resistance Parameter Channel to ambient ∗ When mounted on a ceramic board. Symbol Rth(ch-a) ∗ Limits 179 Unit °C / W www.rohm.com c ○ 2009 ROHM Co., Ltd. All rights reserved. 1/4 2009.06 - Rev.A RW1E015RP Electrical characteristics (Ta=25°C) Parameter Symbol Min. IGSS − Gate-source leakage Drain-source breakdown voltage V(BR) DSS −30 Zero gate voltage drain current − IDSS Gate threshold voltage VGS (th) −1.0 − Static drain-source on-state ∗ RDS (on) − resistance − Forward transfer admittance Yfs ∗ 1.2 Input capacitance − Ciss Output capacitance − Coss Reverse transfer capacitance Crss − Turn-on delay time td (on) ∗ − Rise time − tr ∗ Turn-off delay time − td (off) ∗ Fall time tf ∗ − Total gate charge − Qg ∗ Gate-source charge − Qgs ∗ Gate-drain charge Qgd ∗ − ∗Pulsed Data Sheet Typ. − − − − 115 170 190 − 230 40 33 12 8 40 13 3.2 1.2 0.7 Max. ±10 − −1 −2.5 160 240 270 − − − − − − − − − − − Unit µA V µA V mΩ mΩ mΩ S pF pF pF ns ns ns ns nC nC nC Conditions VGS=±20V, VDS=0V ID= −1mA, VGS=0V VDS= −30V, VGS=0V VDS= −10V, ID= −1mA ID= −1.5A, VGS= −10V ID= −0.7A, VGS= −4.5V ID= −0.7A, VGS= −4V VDS= −10V, ID= −1.5A VDS= −10V VGS=0V f=1MHz VDD −15V ID= −0.7A VGS= −10V RL 21.4Ω RG=10Ω VDD −15V RL 10Ω ID= −1.5A RG=10Ω VGS= −5V Body diode characteristics (Source-drain) (Ta=25°C) Parameter Forward voltage ∗Pulsed Symbol VSD ∗ Min. − Typ. − Max. −1.2 Unit V Conditions IS= −1.5A, VGS=0V www.rohm.com c ○ 2009 ROHM Co., Ltd. All rights reserved. 2/4 2009.06 - Rev.A RW1E015RP Electrical characteristics curves 3 2.5 DRAIN CURRENT : -ID [A] 2 1.5 1 0.5 0 0 0.2 0.4 0.6 3 VGS= -10V DRAIN CURRENT : -ID [A] VGS= -10V VGS= -8.0V VGS= -4.5V VGS= -4.0V DRAIN CURRENT : -ID [A] 2.5 2 VGS= -3.0V 1.5 1 0.5 0 1 0 2 4 6 VGS= -2.8V VGS= -4.5V VGS= -4.0V 1 Ta= 125°C Ta= 75°C Ta= 25°C Ta= - 25°C 10 VDS= -10V Pulsed Data Sheet 0.1 VGS= -3.0V Ta=25°C Pulsed 0.8 0.01 Ta=25°C Pulsed 8 10 0.001 0 1 2 3 4 DRAIN-SOURCE VOLTAGE : -VDS[V] Fig.1 Typical Output Characteristics( Ⅰ) DRAIN-SOURCE VOLTAGE : -VDS[V] Fig.2 Typical Output Characteristics( Ⅱ) GATE-SOURCE VOLTAGE : -VGS[V] Fig.3 Typical Transfer Characteristics STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS(on)[mΩ] Ta=25°C Pulsed STATIC DRAIN-SOURCE ON-STATE RESISTANCE : R DS(on)[mΩ] STATIC DRAIN-SOURCE ON-STATE RESISTANCE : R DS(on)[mΩ] 1000 1000 VGS= -10V Pulsed 1000 VGS= -4.5V Pulsed 100 VGS= -4.0V VGS= -4.5V VGS= -10V 100 Ta=125°C Ta=75°C Ta=25°C Ta= -25°C 100 Ta=125°C Ta=75°C Ta=25°C Ta= -25°C 10 0.1 1 DRAIN-CURRENT : -ID [A] Fig.4 Static Drain-Source On-State Resistance vs. Drain Current( Ⅰ) 10 10 0.1 1 DRAIN-CURRENT : -ID [A] Fig.5 Static Drain-Source On-State Resistance vs. Drain Current( Ⅱ) 10 10 0.1 1 DRAIN-CURRENT : -ID [A] Fig.6 Static Drain-Source On-State Resistance vs. Drain Current( Ⅲ) 10 STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS(on)[mΩ] REVERSE DRAIN CURRENT : -Is [A] VGS= -4.0V Pulsed FORWARD TRANSFER ADMITTANCE : |Yfs| [S] 1000 10 VDS= -10V Pulsed 10 VGS=0V Pulsed 1 100 Ta=125°C Ta=75°C Ta=25°C Ta= -25°C 1 Ta= -25°C Ta=25°C Ta=75°C Ta=125°C 0.1 Ta=125°C Ta=75°C Ta=25°C Ta=-25°C 10 0.1 1 DRAIN-CURRENT : -ID [A] Fig.7 Static Drain-Source On-State Resistance vs. Drain Current( Ⅳ) 10 0.1 0.01 0.01 0.1 1 10 0 0.5 1 1.5 DRAIN-CURRENT : -ID [A] Fig.8 Forward Transfer Admittance vs. Drain Current SOURCE-DRAIN VOLTAGE : -VSD [V] Fig.9 Reverse Drain Current vs. Sourse-Drain Voltage www.rohm.com c ○ 2009 ROHM Co., Ltd. All rights reserved. 3/4 2009.06 - Rev.A RW1E015RP 500 Ta=25°C Pulsed SWITCHING TIME : t [ns] ID = -1.5A 1000 GATE-SOURCE VOLTAGE : -VGS [V] Ta=25°C VDD = -15V VGS= -10V R G=10Ω Pulsed 10 Data Sheet STATIC DRAIN-SOURCE ON-STATE RESISTANCE : R DS(ON)[mΩ] 400 td(off) 100 tf 8 300 6 td(on) 10 200 4 Ta=25°C VDD = -15V ID = -1.5A R G=10Ω Pulsed 0 1 2 3 4 5 6 7 100 ID = -0.7A 1 0 5 10 15 0.01 0.1 1 2 tr 10 0 0 GATE-SOURCE VOLTAGE : -VGS[V] Fig.10 Static Drain-Source On-State Resistance vs. Gate Source Voltage DRAIN-CURRENT : -ID [A] Fig.11 Switching Characteristics TOTAL GATE CHARGE : Qg [nC] Fig.12 Dynamic Input Characteristics 1000 Ciss CAPACITANCE : C [pF] 100 Coss Ta=25°C f=1MHz VGS=0V 10 0.01 0.1 Crss 1 10 100 DRAIN-SOURCE VOLTAGE : -VDS[V] Fig.13 Typical Capacitance vs. Drain-Source Voltage Measurement circuit Pulse Width VGS ID RL D.U.T. VDS VGS 10% 50% 10% 90% 50% 10% 90% RG VDD VDS td(on) ton 90% tr td(off) toff tf Fig.1-1 Switching Time Measurement Circuit Fig.1-2 Switching Waveforms VG VGS ID RL VDS VGS Qgs Qg IG(Const) RG D.U.T. VDD Qgd Charge Fig.2-1 Gate Charge Measurement Circuit Fig.2-2 Gate Charge Waveform Notice This product might cause chip aging and breakdown under the large electrified environment. Please consider to design ESD protection circuit. www.rohm.com c ○ 2009 ROHM Co., Ltd. All rights reserved. 4/4 2009.06 - Rev.A Notice Notes No copying or reproduction of this document, in part or in whole, is permitted without the consent of ROHM Co.,Ltd. The content specified herein is subject to change for improvement without notice. The content specified herein is for the purpose of introducing ROHM's products (hereinafter "Products"). If you wish to use any such Product, please be sure to refer to the specifications, which can be obtained from ROHM upon request. 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