RW1E025RP

Data Sheet 4V Drive Pch MOSFET RW1E025RP  Structure Silicon P-channel MOSFET  Dimensions (Unit : mm) WEMT6 Features 1) Low On-resistance. 2) Small high power package. 3) Low voltage drive.(4V) (6) (5) (4) (1) (2) (3) Abbreviated symbol : UT  Application Switching  Packaging specifications Type Package Code Taping T2CR 8000   Inner circuit (6) (5) (4) Basic ordering unit (pieces) RW1E025RP ∗2 ∗1  Absolute maximum ratings (Ta = 25 C) Parameter Drain-source voltage Gate-source voltage Drain current Source current (Body Diode) Power dissipation Channel temperature Range of storage temperature *1 Pw10s, Duty cycle1% *2 Mounted on a ceramic board. Symbol VDSS VGSS Limits 30 20 2.5 *1 Unit V V A A A A W C C (1) Drain (2) Drain (3) Gate (4) Source (5) Drain (6) Drain (1) (2) (3) ∗1 ESD PROTECTION DIODE ∗2 BODY DIODE Continuous Pulsed Continuous Pulsed ID IDP IS ISP PD Tch Tstg 10 0.5 10 0.7 150 55 to 150 *1 *2  Thermal resistance Parameter Channel to Ambient *Mounted on a ceramic board. Symbol Rth (ch-a)* Limits 179 Unit C / W www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 1/6 2011.03 - Rev.A RW1E025RP  Electrical characteristics (Ta = 25 C) Parameter Gate-source leakage Zero gate voltage drain current Gate threshold voltage Static drain-source on-state resistance Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Total gate charge Gate-source charge Gate-drain charge *Pulsed 　 Symbol IGSS IDSS VGS (th) * RDS (on) l Yfs l * Ciss Coss Crss td(on) * tr * td(off) * tf * Qg * Qgs * Qgd * Min. 30 1.0 1.5 Typ. 55 85 95 480 70 70 7 12 50 22 5.2 1.6 1.6 Max. 10 1 2.5 75 115 125 S pF pF pF ns ns ns ns nC nC nC Unit A V A V Conditions VGS=20V, VDS=0V ID=1mA, VGS=0V VDS=30V, VGS=0V VDS=10V, ID=1mA ID=2.5A, VGS=10V m ID=1.2A, VGS=4.5V ID=1.2A, VGS=4V ID=2.5A, VDS=10V VDS=10V VGS=0V f=1MHz ID=1.2A, VDD 15V VGS=10V RL=12.5 RG=10 ID=2.5A VDD 15V VGS=5V Data Sheet Drain-source breakdown voltage V(BR)DSS Body diode characteristics (Source-Drain) (Ta = 25C) Parameter Forward Voltage *Pulsed Symbol VSD * Min. - Typ. - Max. 1.2 Unit V Conditions Is=2.5A, VGS=0V www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 2/6 2011.03 - Rev.A RW1E025RP Electrical characteristic curves (Ta=25C) Fig.1 Typical Output Characteristics (Ⅰ) 5 VGS=-10.0V 4 VGS=-4.5V VGS=-4.0V Ta=25°C pulsed 　 Data Sheet Fig.2 Typical Output Characteristics (Ⅱ) 5 VGS=-10.0V 4 VGS=-4.5V VGS=-4.0V VGS=-3.0V Ta=25°C pulsed Drain Current : -ID [A] 3 VGS=-3.0V 2 VGS=-2.8V 1 VGS=-2.5V 0 0 0.2 0.4 0.6 0.8 1 Drain-Source Voltage : -VDS [V] Drain Current : -ID [A] 3 VGS=-2.8V 2 1 VGS=-2.5V 0 0 2 4 6 8 10 Drain-Source Voltage : -VDS [V] Fig.3 Static Drain-Source On-State Resistance vs. Drain Current 1000 Ta=25°C pulsed Static Drain-Source On-State Resistance RDS(on) [mW ] Fig.4 Static Drain-Source On-State Resistance vs. Drain Current 1000 VGS=-10V pulsed Static Drain-Source On-State Resistance RDS(on) [mW ] Ta=125°C Ta=75°C Ta=25°C Ta=-25°C VGS=-4.0V VGS=-4.5V VGS=-10V 100 100 10 0.01 0.1 1 10 10 0.01 0.1 1 10 Drain Current : -ID [A] Drain Current : -ID [A] Fig.5 Static Drain-Source On-State Resistance vs. Drain Current 1000 Static Drain-Source On-State Resistance RDS(on) [mW ] VGS=-4.5V pulsed Ta=125°C Ta=75°C Ta=25°C Ta=-25°C Fig.6 Static Drain-Source On-State Resistance vs. Drain Current 1000 VGS=-4V pulsed Static Drain-Source On-State Resistance RDS(on) [mW ] Ta=125°C Ta=75°C Ta=25°C Ta=-25°C 100 100 10 0.01 0.1 1 10 10 0.01 0.1 1 10 Drain Current : -ID [A] Drain Current : -ID [A] www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 3/6 2011.03 - Rev.A RW1E025RP 　 Data Sheet Fig.7 Forward Transfer Admittance vs. Drain Current 10 VDS=-10V pulsed Forward Transfer Admittance Yfs [S] 10 Fig.8 Typical Transfer Characteristics VDS=-10V pulsed 1 1 Ta=125°C Ta=75°C Ta=25°C Ta=-25°C 0.1 Drain Currnt : -ID [A] Ta=125°C Ta=75°C Ta=25°C Ta=-25°C 0.1 0.01 0.01 0.001 0.001 0.01 0.1 Drain Current : -ID [A] 1 10 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 Gate-Source Voltage : -VGS [V] Fig.9 Source Current vs. Source-Drain Voltage 10 VGS=0V pulsed Static Drain-Source On-State Resistance RDS(on) [mW ] Ta=125°C Ta=75°C Ta=25°C Ta=-25°C Fig.10 Static Drain-Source On-State Resistance vs. Gate-Source Voltage 200 Ta=25°C pulsed ID=-1.2A ID=-2.5A 150 Source Current : -Is [A] 1 100 0.1 50 0.01 0.0 0.5 1.0 1.5 Source-Drain Voltage : -VSD [V] 0 0 2 4 6 8 10 Gate-Source Voltage : -VGS [V] Fig.11 Switching Characteristics 1000 VDD≒-15V VGS=-10V RG=10W Ta=25°C Pulsed td(off) 10 Fig.12 Dynamic Input Characteristics tf Switching Time : t [ns] 100 8 Gate-Source Voltage : -VGS [V] Ta=25°C VDD=-15V ID=-2.5A Pulsed 6 tr 10 4 td(on) 2 1 0.01 0.1 1 10 Drain Current :- ID [A] 0 0 2 4 6 8 10 12 Total Gate Charge : Qg [nC] www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 4/6 2011.03 - Rev.A RW1E025RP 　 Data Sheet Fig.13 Typical Capacitance vs. Drain-Source Voltage 10000 Ta=25°C f=1MHz VGS=0V Capacitance : C [pF] 1000 Ciss 100 Crss Coss 10 0.01 0.1 1 10 100 Drain-Source Voltage : -VDS [V] www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 5/6 2011.03 - Rev.A RW1E025RP  Measurement circuits 　 Pulse Width Data Sheet VGS ID RL D.U.T. VDS VGS 10% 50% 10% 90% 50% 10% 90% RG VDD VDS td(on) ton 90% tr td(off) toff tf Fig.1-1 Switching Time Measurement Circuit Fig.1-2　Switching Waveforms VG ID VGS RL IG(Const.) D.U.T. VDD VDS Qg VGS Qgs Qgd Charge Fig.2-1 Gate Charge Measurement Circuit Fig.2-2 Gate Charge Waveform  Notice This product might cause chip aging and breakdown under the large electrified environment. Please consider to design ESD protection circuit. www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 6/6 2011.03 - Rev.A Notice Notes Thank you for your accessing to ROHM product informations. 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