RXH090N03

Data Sheet 4V Drive Nch MOSFET RXH090N03  Structure Silicon N-channel MOSFET  Dimensions (Unit : mm) SOP8 Features 1) Low on-resistance. 2) Built-in G-S Protection Diode. 3) Small Surface Mount Package (SOP8). (8) (5) (1) (4)  Application Switching  Packaging specifications Package Type Code Basic ordering unit (pieces) RXH090N03 Taping TB 2500   Inner circuit (8) (7) (6) (5)  Absolute maximum ratings (Ta = 25C) Symbol Parameter Drain-source voltage Gate-source voltage Drain current Source current (Body Diode) Power dissipation Channel temperature Range of storage temperature *1 Pw10s, Duty cycle1% *2 Mounted on a ceramic board. Limits 30 20 9 *1 Unit V V A A A A W C C (1) Source (2) Source (3) Source (4) Gate (5) Drain (6) Drain (7) Drain (8) Drain ∗2 ∗1 (1) (2) (3) (4) VDSS Continuous Pulsed Continuous Pulsed VGSS ID IDP IS ISP PD Tch Tstg ∗1 ESD PROTECTION DIODE ∗2 BODY DIODE *1 *2 36 1.6 36 2.0 150 55 to 150  Thermal resistance Parameter Channel to Ambient *Mounted on a ceramic board. Symbol Rth (ch-a)* Limits 62.5 Unit C / W www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 1/6 2011.04 - Rev.A RXH090N03  Electrical characteristics (Ta = 25C) Parameter Gate-source leakage Zero gate voltage drain current Gate threshold voltage Static drain-source on-state resistance Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Total gate charge Gate-source charge Gate-drain charge *Pulsed Data Sheet Symbol IGSS IDSS VGS (th) * RDS (on) l Yfs l* Ciss Coss Crss td(on)* tr * td(off)* tf * Qg * Qgs * Qgd * Min. 30 1.0 5.0 - Typ. 12 17 19 440 170 85 8 30 30 8 6.8 1.6 2.6 Max. 10 1 2.5 17 24 27 - Unit A V A V Conditions VGS=20V, VDS=0V ID=1mA, V GS=0V VDS=30V, VGS=0V VDS=10V, ID=1mA ID=9A, VGS=10V Drain-source breakdown voltage V(BR)DSS m  ID=9A, VGS=4.5V ID=9A, VGS=4.0V S pF pF pF ns ns ns ns nC nC nC ID=9A, VDS=10V VDS=10V VGS=0V f=1MHz ID=4.5A, VDD 15V VGS=10V RL=3.32 RG=10 ID=9A, VDD 15V VGS=5V Body diode characteristics (Source-Drain) (Ta = 25C) Parameter Forward Voltage *Pulsed Symbol VSD * Min. - Typ. - Max. 1.2 Unit V Conditions Is=9A, VGS=0V www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 2/6 2011.04 - Rev.A RXH090N03 Electrical characteristic curves (Ta=25C) Fig.1 Typical Output Characteristics(Ⅰ) 9 8 7 DRAIN CURRENT : ID[A] 6 5 4 3 2 1 0 0 0.2 0.4 0.6 0.8 1 DRAIN-SOURCE VOLTAGE : VDS[V] Ta=25°C Pulsed VGS= 10V VGS= 4.5V VGS= 4.0V VGS= 2.5V VGS= 2.8V 　 Data Sheet Fig.2 Typical Output Characteristics(Ⅱ) 9 VGS= 2.8V 8 7 6 5 4 3 2 1 0 0 2 4 6 8 10 DRAIN-SOURCE VOLTAGE : VDS[V] Ta=25°C Pulsed VGS= 10V VGS= 4.5V VGS= 4.0V VGS= 2.5V DRAIN CURRENT : ID[A] Fig.3 Typical Transfer Characteristics 10 VDS= 10V Pulsed 1 STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS(on)[mΩ] 1000 Fig.4 Static Drain-Source On-State Resistance vs. Drain Current(Ⅰ) Ta=25°C Pulsed DRAIN CURRENT : ID[A] Ta=125°C Ta=75°C Ta=25°C Ta=-25°C 100 0.1 10 VGS= 4.0V VGS= 4.5V VGS= 10V 1 0.01 0.001 0 1 2 3 GATE-SOURCE VOLTAGE : VGS[V] 0.1 1 DRAIN-CURRENT : ID[A] 10 Fig.5 Static Drain-Source On-State Resistance vs. Drain Current(Ⅱ) 1000 STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS(on)[mΩ] VGS= 10V Pulsed Ta=125°C Ta=75°C Ta=25°C Ta=-25°C 1000 Fig.6 Static Drain-Source On-State Resistance vs. Drain Current(Ⅲ) VGS= 4.5V Pulsed STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS(on)[mΩ] 100 100 Ta=125°C Ta=75°C Ta=25°C Ta=-25°C 10 10 1 0.1 1 DRAIN-CURRENT : ID[A] 10 1 0.1 1 DRAIN-CURRENT : ID[A] 10 www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 3/6 2011.04 - Rev.A RXH090N03 　 Data Sheet Fig.7 Static Drain-Source On-State Resistance vs. Drain Current(Ⅳ) FORWARD TRANSFER ADMITTANCE : |Yfs| [S] 1000 VGS= 4.0V Pulsed STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS(on)[mΩ] Ta=125°C Ta=75°C Ta=25°C Ta=-25°C 100 VDS= 10V Pulsed Fig.8 Forward Transfer Admittance vs. Drain Current 100 10 10 1 Ta=125°C Ta=75°C Ta=25°C Ta=-25°C 1 0.1 1 DRAIN-CURRENT : ID[A] 10 0.1 0.01 0.1 1 10 DRAIN-CURRENT : ID[A] Fig.10 Static Drain-Source On-State Resistance vs. Gate Source Voltage 50 STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS(ON)[mΩ] Fig.9 Reverse Drain Current vs. Sourse-Drain Voltage 10 VGS=0V Pulsed SOURCE CURRENT : Is [A] Ta=25°C Pulsed 40 ID= 4.5A ID= 9.0A 30 1 0.1 Ta=125°C Ta=75°C Ta=25°C Ta=-25°C 20 10 0.01 0 0.5 1 1.5 SOURCE-DRAIN VOLTAGE : VSD [V] 0 0 2 4 6 8 10 GATE-SOURCE VOLTAGE : VGS[V] Fig.11 Switching Characteristics 1000 td(off) tf SWITCHING TIME : t [ns] 100 Ta=25°C VDD= 15V VGS=10V RG=10W Pulsed 10 Fig.12 Dynamic Input Characteristics GATE-SOURCE VOLTAGE : VGS [V] 8 6 td(on) 10 4 Ta=25°C VDD= 15V ID= 9A Pulsed 0 2 4 6 8 10 12 14 2 tr 1 0.01 0.1 1 10 DRAIN-CURRENT : ID[A] 0 TOTAL GATE CHARGE : Qg [nC] www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 4/6 2011.04 - Rev.A RXH090N03 　 Fig.13 Typical Capacitance vs. Drain-Source Voltage Data Sheet Fig.14 Maximum Safe Operating Aera 1000 Operation in this area is limited by RDS(ON) (VGS=10V) 100 10000 CAPACITANCE : C [pF] 1000 DRAIN CURRENT : ID [A] Ciss 10 PW =100us Crss 100 Coss Ta=25°C f=1MHz VGS=0V 10 0.01 0.1 1 10 100 1 PW =1ms PW = 10ms 0.1 Ta=25°C Single Pulse Mounted on a ceramic board. (30mm × 30mm × 0.8mm) 0.1 1 10 DC operation 0.01 100 DRAIN-SOURCE VOLTAGE : VDS[V] DRAIN-SOURCE VOLTAGE : VDS[V] Fig.15 Normalized Transient Thermal Resistance vs. Pulse Width 10 NORMARIZED TRANSIENT THERMAL RESISTANCE : r (t) Ta=25°C Single Pulse 1 0.1 0.01 Mounted on a ceramic board. (30mm × 30mm × 0.8mm) Rth(ch-a)=62.5°C/W Rth(ch-a)(t)=r(t)×Rth(ch-a) 0.001 0.01 0.1 1 10 100 1000 0.001 0.0001 PULSE WIDTH : Pw(s) www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 5/6 2011.04 - Rev.A RXH090N03  Measurement circuits Pulse width Data Sheet VGS ID RL D.U.T. VDS VGS VDS 50% 10% 10% 90% 50% 10% 90% RG VDD td(on) ton 90% tr td(off) toff tf Fig.1-1 Switching Time Measurement Circuit VGS Fig.1-2　Switching Waveforms VG ID RL VDS Qg VGS Qgs Qgd IG(Const.) D.U.T. VDD Charge Fig.2-1 Gate Charge Measurement Circuit Fig.2-2 Gate Charge Waveform  Notice This product might cause chip aging and breakdown under the large electrified environment. Please consider to design ESD protection circuit. www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 6/6 2011.04 - Rev.A Notice Notes Thank you for your accessing to ROHM product informations. More detail product informations and catalogs are available, please contact us. ROHM Customer Support System http://www.rohm.com/contact/ www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. R1120A