RXH100N03TB1

Data Sheet 4V Drive Nch MOSFET RXH100N03  Structure Silicon N-channel MOSFET  Dimensions (Unit : mm) SOP8 Features 1) Low on-resistance. 2) Built-in G-S Protection Diode. 3) Small Surface Mount Package (SOP8). (8) (5) (1) (4)  Application Switching  Packaging specifications Package Type Code Quantity (pcs) RXH100N03  Inner circuit Taping TB 2500  (8)  Absolute maximum ratings (Ta = 25C) Symbol Parameter Drain-source voltage VDSS Gate-source voltage Drain current Source current (Body Diode) Continuous Pulsed Continuous VGSS ID IDP IS Pulsed ISP PD Power dissipation Channel temperature Range of storage temperature *1 *1 Limits Unit 30 20 10 V V A 36 1.6 36 A A A 2.0 W Tch Tstg 150 55 to 150 C C Symbol Limits Unit 62.5 C / W *2 (1) Source (2) Source (3) Source (4) Gate (5) Drain (6) Drain (7) Drain (8) Drain (7) (6) (5) (3) (4) ∗2 ∗1 (1) (2) ∗1 ESD PROTECTION DIODE ∗2 BODY DIODE *1 Pw10s, Duty cycle1% *2 Mounted on a ceramic board.  Thermal resistance Parameter Channel to Ambient Rth (ch-a)* *Mounted on a ceramic board. www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 1/6 2019.05 - Rev.B Data Sheet RXH100N03  Electrical characteristics (Ta = 25C) Parameter Gate-source leakage Symbol Min. Typ. Max. Unit IGSS - - 10 A Drain-source breakdown voltage V(BR)DSS Zero gate voltage drain current Gate threshold voltage Conditions VGS=20V, VDS=0V 30 - - V ID=1mA, V GS=0V IDSS - - 1 A VDS=30V, VGS=0V VGS (th) 1.0 - 2.5 V - 9.5 13 ID=10A, VGS=10V m ID=10A, VGS=4.5V VDS=10V, ID=1mA Static drain-source on-state resistance * RDS (on) - 12 17 - 13 18 Forward transfer admittance l Yfs l* 8.0 - - S ID=10A, VDS=10V Input capacitance Ciss - 800 - pF VDS=10V Output capacitance Coss - 270 - pF VGS=0V Reverse transfer capacitance Crss - 140 - pF f=1MHz Turn-on delay time td(on)* - 10 - ns ID=5A, VDD 15V Rise time tr * td(off)* - 45 - ns VGS=10V - 50 - ns RL=3.0 tf * - 15 - ns RG=10 Turn-off delay time Fall time ID=10A, VGS=4.0V Total gate charge Qg * - 11.0 - nC ID=10A, VDD 15V Gate-source charge Qgs * Qgd * 2.4 4.8 - nC nC VGS=5V Gate-drain charge - *Pulsed Body diode characteristics (Source-Drain) (Ta = 25C) Parameter Forward Voltage Symbol VSD * Min. Typ. Max. - - 1.2 Unit Conditions V Is=10A, VGS=0V *Pulsed www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 2/6 2019.05 - Rev.B Data Sheet RXH100N03 Electrical characteristic curves (Ta=25C) Fig.2 Typical Output Characteristics(Ⅱ) Fig.1 Typical Output Characteristics(Ⅰ) 10 10 Ta=25°C Pulsed VGS= 10V VGS= 4.5V VGS= 4.0V VGS= 3.5V 6 8 4 DRAIN CURRENT : ID[A] DRAIN CURRENT : ID[A] 8 Ta=25°C Pulsed VGS= 2.5V 2 VGS= 10V VGS= 4.5V VGS= 4.0V VGS= 3.5V 6 4 2 VGS= 2.5V 0 0 0.2 0.4 0.6 0.8 0 1 0 100 STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS(on)[mΩ] DRAIN CURRENT : ID[A] 10 Ta=125°C Ta=75°C Ta=25°C Ta=-25°C 1 0.1 0.01 8 10 0 1 2 Ta=25°C Pulsed VGS= 4.0V VGS= 4.5V VGS= 10V 10 1 3 . 0.1 1 10 100 DRAIN-CURRENT : ID[A] GATE-SOURCE VOLTAGE : VGS[V] Fig.5 Static Drain-Source On-State Resistance vs. Drain Current(Ⅱ) Fig.6 Static Drain-Source On-State Resistance vs. Drain Current(Ⅲ) 100 100 VGS= 4.5V Pulsed VGS= 10V Pulsed STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS(on)[mΩ] STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS(on)[mΩ] 6 100 VDS= 10V Pulsed 10 Ta=125°C Ta=75°C Ta=25°C Ta=-25°C 1 4 Fig.4 Static Drain-Source On-State Resistance vs. Drain Current(Ⅰ) Fig.3 Typical Transfer Characteristics 0.001 2 DRAIN-SOURCE VOLTAGE : VDS[V] DRAIN-SOURCE VOLTAGE : VDS[V] 0.1 1 10 Ta=125°C Ta=75°C Ta=25°C Ta=-25°C 1 100 DRAIN-CURRENT : ID[A] www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 10 0.1 1 10 100 DRAIN-CURRENT : ID[A] 3/6 2019.05 - Rev.B Data Sheet RXH100N03 Fig.7 Static Drain-Source On-State Resistance vs. Drain Current(Ⅳ) Fig.8 Forward Transfer Admittance vs. Drain Current FORWARD TRANSFER ADMITTANCE : |Yfs| [S] STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS(on)[mΩ] 100 VGS= 4.0V Pulsed 10 Ta=125°C Ta=75°C Ta=25°C Ta=-25°C 1 0.1 1 10 100 VDS= 10V Pulsed 10 Ta=125°C Ta=75°C Ta=25°C Ta=-25°C 1 0.1 0.01 100 0.1 Fig.9 Reverse Drain Current vs. Sourse-Drain Voltage STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS(ON)[mΩ] SOURCE CURRENT : Is [A] VGS=0V Pulsed 10 1 0.01 Ta=125°C Ta=75°C Ta=25°C Ta=-25°C 0 0.5 1 30 Ta=25°C Pulsed ID= 10.0A 10 0 5 10 GATE-SOURCE VOLTAGE : VGS[V] Fig.11 Switching Characteristics Fig.12 Dynamic Input Characteristics 10 10000 tf 1000 GATE-SOURCE VOLTAGE : VGS [V] Ta=25°C VDD=15V VGS=10V RG=10Ω Pulsed td(off) SWITCHING TIME : t [ns] 100 20 0 1.5 ID= 5.0A 40 SOURCE-DRAIN VOLTAGE : VSD [V] 100 tr 10 8 6 4 Ta=25°C VDD=15V ID= 10A RG=10Ω Pulsed 2 td(on) 1 10 Fig.10 Static Drain-Source On-State Resistance vs. Gate Source Voltage 50 100 0.1 1 DRAIN-CURRENT : ID[A] DRAIN-CURRENT : ID[A] 0.01 0.1 1 10 0 100 DRAIN-CURRENT : ID[A] www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 0 5 10 15 20 TOTAL GATE CHARGE : Qg [nC] 4/6 2019.05 - Rev.B Data Sheet RXH100N03 Fig.13 Typical Capacitance vs. Drain-Source Voltage Fig.14 Maximum Safe Operating Aera 10000 1000 Operation in this area is limited by RDS(ON) (VGS=10V) 100 DRAIN CURRENT : ID (A) CAPACITANCE : C [pF] Ciss 1000 Crss 100 Coss Ta=25°C f=1MHz VGS=0V 10 0.01 0.1 10 PW = 10ms 0.01 100 PW =1ms 1 0.1 1 PW =100us 10 Ta=25°C Single Pulse Mounted on a ceramic board. (30mm × 30mm × 0.8mm) 0.1 1 DC operation 10 100 DRAIN-SOURCE VOLTAGE : VDS[V] DRAIN-SOURCE VOLTAGE : VDS[V] Fig.15 Normalized Transient Thermal Resistance vs. Pulse Width NORMARIZED TRANSIENT THERMAL RESISTANCE : r (t) 10 1 0.1 Mounted on a ceramic board. (30mm × 30mm × 0.8mm) Rth(ch-a)=62.5°C/W Rth(ch-a)(t)=r(t)×Rth(ch-a) 0.01 0.001 0.0001 0.001 0.01 0.1 1 10 100 1000 PULSE WIDTH : Pw(s) www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 5/6 2019.05 - Rev.B Data Sheet RXH100N03  Measurement circuits Pulse width VGS ID VDS 90% 50% 10% VGS VDS RL 50% 10% D.U.T. VDD RG 10% 90% td(on) ton Fig.1-1 Switching Time Measurement Circuit 90% td(off) tr tf toff Fig.1-2　Switching Waveforms VG VGS ID VDS Qg RL IG(Const.) VGS D.U.T. Qgs Qgd VDD Charge Fig.2-1 Gate Charge Measurement Circuit www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. Fig.2-2 Gate Charge Waveform 6/6 2019.05 - Rev.B Notice Precaution on using ROHM Products 1. Our Products are designed and manufactured for application in ordinary electronic equipment (such as AV equipment, OA equipment, telecommunication equipment, home electronic appliances, amusement equipment, etc.). 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