RXH125N03TB1

RXH125N03 Data Sheet 4V Drive Nch MOSFET RXH125N03  Structure Silicon N-channel MOSFET  Dimensions (Unit : mm) SOP8 Features 1) Low on-resistance. 2) Built-in G-S Protection Diode. 3) Small Surface Mount Package (SOP8). (8) (5) (1) (4)  Application Switching  Packaging specifications  Inner circuit Package Type Code Basic ordering unit (pieces) RXH125N03 Taping TB 2500  (8)  Absolute maximum ratings (Ta = 25C) Parameter Symbol Limits Unit Drain-source voltage VDSS 30 V Gate-source voltage VGSS 20 V Continuous ID 12.5 A Pulsed Continuous IDP IS *1 36 1.6 A A Pulsed ISP *1 36 A PD *2 2.0 W Tch Tstg 150 55 to 150 C C Symbol Limits Unit 62.5 C / W Drain current Source current (Body Diode) Power dissipation Channel temperature Range of storage temperature (1) Source (2) Source (3) Source (4) Gate (5) Drain (6) Drain (7) Drain (8) Drain (7) (6) (5) (3) (4) ∗2 ∗1 (1) (2) ∗1 ESD PROTECTION DIODE ∗2 BODY DIODE *1 Pw10s, Duty cycle1% *2 Mounted on a ceramic board.  Thermal resistance Parameter Channel to Ambient Rth (ch-a)* *Mounted on a ceramic board. www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 1/6 2011.03 - Rev.A Data Sheet 　 RXH125N03  Electrical characteristics (Ta = 25C) Parameter Gate-source leakage Symbol IGSS Drain-source breakdown voltage V(BR)DSS Min. Typ. Max. Unit Conditions - - 10 A VGS=20V, VDS=0V 30 - - V ID=1mA, VGS=0V IDSS - - 1 A VDS=30V, VGS=0V Gate threshold voltage VGS (th) 1.0 - 2.5 V VDS=10V, ID=1mA Static drain-source on-state resistance - 7.5 12.0 ID=12.5A, VGS=10V * RDS (on) - 9.5 13.3 m ID=12.5A, VGS=4.5V - 10.0 14.0 ID=12.5A, VGS=4.0V Zero gate voltage drain current l Yfs l* 9.0 - - S ID=12.5A, VDS=10V Input capacitance Ciss - 1000 - pF VDS=10V Output capacitance Coss - 340 - pF VGS=0V Forward transfer admittance Reverse transfer capacitance Crss - 170 - pF f=1MHz Turn-on delay time td(on) * - 12 - ns ID=6.3A, VDD 15V Rise time tr * td(off) * - 20 - ns VGS=10V - 55 - ns RL=2.38 tf * - 18 - ns RG=10 Total gate charge Qg * - 12.7 - nC ID=12.5A, VDD 15V Gate-source charge Gate-drain charge Qgs * Qgd * - 2.6 6.0 - nC nC VGS=5V Turn-off delay time Fall time *Pulsed Body diode characteristics (Source-Drain) (Ta = 25C) Parameter Forward Voltage Symbol VSD * Min. Typ. Max. - - 1.2 Unit V Conditions Is=12.5A, VGS=0V *Pulsed www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 2/6 2011.03 - Rev.A Data Sheet 　 RXH125N03 Electrical characteristic curves (Ta=25C) Fig.1 Typical Output Characteristics (Ⅰ) Fig.2 Typical Output Characteristics (Ⅱ) 12.5 12.5 VGS=10.0V Ta=25°C Pulsed 10 VGS=4.5V VGS=4.0V 10 VGS=10.0V VGS=3.0V 7.5 VGS=2.5V VGS=3.0V VGS=4.0V Drain Current : ID [A] Drain Current : ID [A] VGS=4.5V 5 7.5 5 VGS=2.5V 2.5 2.5 Ta=25°C Pulsed 0 0 0.2 0.4 0.6 0.8 0 1 0 2 Drain-Source Voltage : VDS [V] 8 10 Fig.4 Static Drain-Source On-State Resistance vs. Drain Current 100 100 VGS=10V pulsed Static Drain-Source On-State Resistance RDS(on) [mΩ] Ta=25°C Pulsed VGS=4.0V VGS=4.5V VGS=10V 10 1 0.01 0.1 1 10 Ta=125°C Ta=75°C Ta=25°C Ta=-25°C 10 1 0.01 100 0.1 1 10 100 Drain Current : ID [A] Drain Current : ID [A] Fig.5 Static Drain-Source On-State Resistance vs. Drain Current Fig.6 Static Drain-Source On-State Resistance vs. Drain Current 100 100 VGS=4.5V pulsed Static Drain-Source On-State Resistance RDS(on) [mΩ] Static Drain-Source On-State Resistance RDS(on) [mΩ] 6 Drain-Source Voltage : VDS [V] Fig.3 Static Drain-Source On-State Resistance vs. Drain Current Static Drain-Source On-State Resistance RDS(on) [mΩ] 4 Ta=125°C Ta=75°C Ta=25°C Ta=-25°C 10 1 0.01 0.1 1 10 Ta=125°C Ta=75°C Ta=25°C Ta=-25°C 10 1 0.01 100 0.1 1 10 100 Drain Current : ID [A] Drain Current : ID [A] www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. VGS=4V pulsed 3/6 2011.03 - Rev.A Data Sheet 　 RXH125N03 Fig.7 Forward Transfer Admittance vs. Drain Current Fig.8 Typical Transfer Characteristics 100 100 VDS=10V pulsed VDS=10V pulsed 10 Drain Currnt : ID [A] Forward Transfer Admittance Yfs [S] 10 1 Ta=125°C Ta=75°C Ta=25°C Ta=-25°C 0.1 0.01 0.001 0.01 0.1 Ta=125°C Ta=75°C Ta=25°C Ta=-25°C 1 0.1 0.01 1 10 0.001 100 0.0 0.5 1.0 VGS=0V pulsed 3.0 3.5 Static Drain-Source On-State Resistance RDS(on) [mΩ] Ta=25°C pulsed 10 Source Current : Is [A] 2.5 50 100 Ta=125°C Ta=75°C Ta=25°C Ta=-25°C 1 0.1 0.0 0.5 1.0 1.5 40 ID=12.5A 30 20 10 0 2.0 ID=6.3A 0 2 4 6 8 10 Gate-Source Voltage : VGS [V] Source-Drain Voltage : VSD [V] Fig.11 Switching Characteristics Fig.12 Dynamic Input Characteristics 10000 10 VDD≒15V VGS=10V RG=10Ω Ta=25°C Pulsed tf td(off) 100 10 Ta=25°C VDD=15V ID=12.5A Pulsed 8 Gate-Source Voltage : VGS [V] 1000 Switching Time : t [ns] 2.0 Fig.10 Static Drain-Source On-State Resistance vs. Gate-Source Voltage Fig.9 Source Current vs. Source-Drain Voltage 0.01 1.5 Gate-Source Voltage : VGS [V] Drain Current : ID [A] tr 6 4 2 td(on) 1 0.01 0.1 1 10 0 100 5 10 15 20 25 Total Gate Charge : Qg [nC] Drain Current : ID [A] www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 0 4/6 2011.03 - Rev.A Data Sheet 　 RXH125N03 Fig.14 Maximum Safe Operating Area Fig.13 Typical Capacitance vs. Drain-Source Voltage 100 10000 Operation in this area is limited by RDS(on) (VGS = 10V) PW = 100μs 1000 Drain Current : ID [ A ] Capacitance : C [pF] 10 Ciss Coss 100 Ta=25°C f=1MHz VGS=0V 0.01 PW = 10ms 0.1 Crss 10 PW = 1ms 1 0.01 0.1 1 10 100 Ta=25°C Single Pulse Mounted on a ceramic board. (30mm × 30mm × 0.8mm) 0.1 1 DC Operation 10 100 Drain-Source Voltage : VDS [ V ] Drain-Source Voltage : VDS [V] Fig.15 Normalized Transient Thermal Resistance v.s. Pulse Width Normalized Transient Thermal Resistance : r (t) 10 Ta=25°C Single Pulse 1 0.1 0.01 Mounted on a ceramic board. (30mm × 30mm × 0.8mm) Rth(ch-a)=62.5°C/W Rth(ch-a)(t)=r(t)×Rth(ch-a) 0.001 0.0001 0.0001 0.001 0.01 0.1 1 10 100 1000 Pulse width : Pw (s) www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 5/6 2011.03 - Rev.A Data Sheet 　 RXH125N03  Measurement circuits Pulse width VGS ID VDS 90% 50% 10% VGS VDS RL 50% 10% D.U.T. VDD RG 10% 90% td(on) ton Fig.1-1 Switching Time Measurement Circuit 90% td(off) tr tf toff Fig.1-2　Switching Waveforms VG VGS ID VDS Qg RL IG(Const.) VGS D.U.T. Qgs Qgd VDD Charge Fig.2-1 Gate Charge Measurement Circuit www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. Fig.2-2 Gate Charge Waveform 6/6 2011.03 - Rev.A Notice Notes Thank you for your accessing to ROHM product informations. More detail product informations and catalogs are available, please contact us. ROHM Customer Support System http://www.rohm.com/contact/ www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. R1120A