RXQ040N03

Data Sheet 4V Drive Nch MOSFET RXQ040N03  Structure Silicon N-channel MOSFET  Dimensions (Unit : mm) TSMT6 Features 1) Low on-resistance. 2) Built-in G-S Protection Diode. 3) Small Surface Mount Package (TSMT6). Abbreviated symbol : XQ  Application Switching  Packaging specifications Package Type Code Basic ordering unit (pieces) RXQ040N03 Taping TCR 3000 ○  Inner circuit (6) (5) (4) ∗2 ∗1  Absolute maximum ratings (Ta = 25C) Symbol Parameter Drain-source voltage Gate-source voltage Drain current Source current (Body Diode) Power dissipation Channel temperature Range of storage temperature *1 Pw10s, Duty cycle1% *2 Mounted on a ceramic board. Limits 30 20 4.0 *1 Unit V V A A A A W C C VDSS Continuous Pulsed Continuous Pulsed VGSS ID IDP IS ISP PD Tch Tstg (1) Drain (2) Drain (3) Gate (4) Source (5) Drain (6) Drain (1) (2) (3) ∗1 ESD PROTECTION DIODE ∗2 BODY DIODE *1 *2 12 1.0 12 1.25 150 55 to 150  Thermal resistance Parameter Channel to Ambient *Mounted on a ceramic board. Symbol Rth (ch-a)* Limits 100 Unit C / W www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 1/6 2011.05 - Rev.A RXQ040N03  Electrical characteristics (Ta = 25C) Parameter Gate-source leakage Zero gate voltage drain current Gate threshold voltage Static drain-source on-state resistance Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Total gate charge Gate-source charge Gate-drain charge *Pulsed 　 Symbol IGSS IDSS VGS (th) * RDS (on) l Yfs l* Ciss Coss Crss td(on) * tr * td(off) * tf * Qg * Qgs * Qgd * Min. 30 1.0 1.5 Typ. 35 45 50 180 70 35 10 28 24 7 3.3 1.0 1.0 Max. 10 1 2.5 50 65 70 S pF pF pF ns ns ns ns nC nC nC Unit A V A V Conditions VGS=20V, VDS=0V ID=1mA, V GS=0V VDS=30V, VGS=0V VDS=10V, ID=1mA ID=4.0A, VGS=10V m  ID=4.0A, VGS=4.5V ID=4.0A, VGS=4.0V ID=4.0A, VDS=10V VDS=10V VGS=0V f=1MHz ID=2.0A, VDD 15V VGS=10V RL=7.5 RG=10 ID=4.0A VDD 15V VGS=5V Data Sheet Drain-source breakdown voltage V(BR)DSS Body diode characteristics (Source-Drain) (Ta = 25C) Parameter Forward Voltage *Pulsed Symbol VSD * Min. - Typ. - Max. 1.2 Unit V Conditions Is=4.0A, VGS=0V www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 2/6 2011.05 - Rev.A RXQ040N03 Electrical characteristic curves (Ta=25C) Fig.1 Typical Output Characteristics (Ⅰ) 4 VGS=10.0V VGS=4.5V 3 Drain Current : ID [A] VGS=4.0V VGS=3.0V Ta=25°C Pulsed 　 Data Sheet Fig.2 Typical Output Characteristics (Ⅱ) 4 VGS=10.0V VGS=4.5V 3 Drain Current : ID [A] VGS=4.0V Ta=25°C Pulsed VGS=3.0V 2 VGS=2.5V 2 1 VGS=2.5V 1 0 0 0.2 0.4 0.6 0.8 1 0 0 2 4 6 8 10 Drain-Source Voltage : VDS [V] Drain-Source Voltage : VDS [V] Fig.3 Static Drain-Source On-State Resistance vs. Drain Current 1000 Ta=25°C Pulsed Fig.4 Static Drain-Source On-State Resistance vs. Drain Current 1000 VGS=10V pulsed Ta=125°C Ta=75°C Ta=25°C Ta=-25°C Static Drain-Source On-State Resistance RDS(on) [mΩ] VGS=4.0V VGS=4.5V VGS=10V Static Drain-Source On-State Resistance RDS(on) [mΩ] 100 100 10 10 1 0.01 0.1 1 Drain Current : ID [A] 10 100 1 0.01 0.1 1 Drain Current : ID [A] 10 100 FIg.5 Static Drain-Source On-State Resistance vs. Drain Current 1000 VGS=4.5V pulsed Static Drain-Source On-State Resistance RDS(on) [mΩ] Ta=125°C Ta=75°C Ta=25°C Ta=-25°C Fig.6 Static Drain-Source On-State Resistance vs. Drain Current 1000 VGS=4V pulsed Static Drain-Source On-State Resistance RDS(on) [mΩ] Ta=125°C Ta=75°C Ta=25°C Ta=-25°C 100 100 10 10 1 0.01 0.1 1 Drain Current : ID [A] 10 100 1 0.01 0.1 1 Drain Current : ID [A] 10 100 www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 3/6 2011.05 - Rev.A RXQ040N03 　 Data Sheet Fig.7 Forward Transfer Admittance vs. Drain Current 10 VDS=10V pulsed Ta=125°C Ta=75°C Ta=25°C Ta=-25°C 10 VDS=10V pulsed Fig.8 Typical Transfer Characteristics Forward Transfer Admittance Yfs [S] 1 Drain Currnt : ID [A] Ta=125°C Ta=75°C Ta=25°C Ta=-25°C 1 0.1 0.1 0.01 0.01 0.001 0.001 0.01 0.1 1 10 100 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 Drain Current : ID [A] Gate-Source Voltage : VGS [V] Fig.9 Source Current vs. Source-Drain Voltage 10 VGS=0V pulsed Ta=125°C Ta=75°C Ta=25°C Ta=-25°C Fig.10 Static Drain-Source On-State Resistance vs. Gate-Source Voltage 100 Ta=25°C Pulsed 80 ID=2.0A ID=4.0A 1 Static Drain-Source On-State Resistance RDS(on) [mΩ] Source Current : Is [A] 60 40 0.1 20 0.01 0.0 0.5 1.0 1.5 2.0 0 0 2 4 6 8 10 Gate-Source Voltage : VGS [V] Source-Drain Voltage : VSD [V] Fig.11 Switching Characteristics 1000 VDD≒15V VGS=10V RG=10Ω Ta=25°C Pulsed 10 Ta=25°C VDD=15V ID=4.0A Pulsed Fig.12 Dynamic Input Characteristics 8 Gate-Source Voltage : VGS [V] tf Switching Time : t [ns] 100 td(off) 6 tr 10 4 2 td(on) 1 0.01 0.1 1 10 Drain Current : ID [A] 0 0 2 4 6 8 10 Total Gate Charge : Qg [nC] www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 4/6 2011.05 - Rev.A RXQ040N03 　 Data Sheet Fig.13 Typical Capacitance vs. Drain-Source Voltage 1000 Ta=25°C f=1MHz VGS=0V 10 Drain Current : ID [ A ] Capacitance : C [pF] Ciss 100 100 Fig.14 Maximum Safe Operating Area Operation in this area is limited by RDS(on) (VGS = 10V) PW = 100μs 1 PW = 1ms PW = 10ms 0.1 Ta=25°C Single Pulse Mounted on a ceramic board. (30mm × 30mm × 0.8mm) 0.1 1 10 Coss Crss DC Operation 10 0.01 0.1 1 10 100 1000 0.01 100 Drain-Source Voltage : VDS [ V ] Drain-Source Voltage : VDS [V] Fig.15 Normalized Transient Thermal Resistance v.s. Pulse Width 10 Normalized Transient Thermal Resistance : r（t） Ta=25°C Single Pulse 1 0.1 0.01 Mounted on a ceramic board. （30mm × 30mm × 0.8mm) Rth(ch-a)=100°C/W Rth(ch-a)(t)=r(t)×Rth(ch-a) 0.001 0.01 0.1 1 10 100 1000 0.001 0.0001 Pulse width : Pw (s) www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 5/6 2011.05 - Rev.A RXQ040N03  Measurement circuits 　 Data Sheet Pulse width VGS ID RL D.U.T. RG VDD VDS VGS VDS 50% 10% 10% 90% td(on) ton tr 90% 50% 10% 90% td(off) toff tf Fig.1-1 Switching Time Measurement Circuit VGS Fig.1-2　Switching Waveforms VG ID RL VDS Qg VGS Qgs Qgd IG(Const.) D.U.T. VDD Charge Fig.2-1 Gate Charge Measurement Circuit Fig.2-2 Gate Charge Waveform  Notice This product might cause chip aging and breakdown under the large electrified environment. Please consider to design ESD protection circuit. www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 6/6 2011.05 - Rev.A Notice Notes Thank you for your accessing to ROHM product informations. More detail product informations and catalogs are available, please contact us. ROHM Customer Support System http://www.rohm.com/contact/ www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. R1120A