RXR035N03

Data Sheet 4V Drive Nch MOSFET RXR035N03  Structure Silicon N-channel MOSFET  Dimensions (Unit : mm) TSMT3 Features 1) Low on-resistance. 2) Built-in G-S Protection Diode. 3) Small Surface Mount Package (TSMT3). (3) (1) (2) Abbreviated symbol : XQ  Application Switching  Packaging specifications Package Code Basic ordering unit (pieces) RXR035N03 Type Taping TCL 3000 ○  Inner circuit (3) ∗1 ∗2  Absolute maximum ratings (Ta = 25 C) Parameter Drain-source voltage Gate-source voltage Drain current Source current (Body Diode) Power dissipation Channel temperature Range of storage temperature *1 Pw10s, Duty cycle1% *2 Mounted on a ceramic board. Symbol VDSS VGSS Limits 30 20 3.5 *1 Unit V V A A A A W C C (1) Gate (2) Source (3) Drain (1) (2) ∗1 BODY DIODE ∗2 ESD PROTECTION DIODE Continuous Pulsed Continuous Pulsed ID IDP IS ISP PD Tch Tstg 12 0.8 12 1.0 150 55 to 150 *1 *2  Thermal resistance Parameter Channel to Ambient *Mounted on a ceramic board. Symbol Rth (ch-a)* Limits 125 Unit C / W www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 1/6 2011.03 - Rev.A RXR035N03  Electrical characteristics (Ta = 25 C) Parameter Gate-source leakage Zero gate voltage drain current Gate threshold voltage Static drain-source on-state resistance Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Total gate charge Gate-source charge Gate-drain charge *Pulsed 　 Symbol IGSS IDSS VGS (th) * RDS (on) l Yfs l* Ciss Coss Crss td(on) * tr * td(off) * tf * Qg * Qgs * Qgd * Min. 30 1.0 2.2 Typ. 35 45 50 180 70 35 10 25 25 7 3.3 1.0 1.0 Max. 10 1 2.5 50 65 70 S pF pF pF ns ns ns ns nC nC nC Unit A V A V Conditions VGS=20V, VDS=0V ID=1mA, VGS=0V VDS=30V, VGS=0V VDS=10V, ID=1mA ID=3.5A, VGS=10V m ID=3.5A, VGS=4.5V ID=3.5A, VGS=4.0V ID=3.5A, VDS=10V VDS=10V VGS=0V f=1MHz ID=1.7A, VDD 15V VGS=10V RL=8.8 RG=10 ID=3.5A VDD 15V VGS=5V Data Sheet Drain-source breakdown voltage V(BR)DSS Body diode characteristics (Source-Drain) (Ta = 25C) Parameter Forward Voltage *Pulsed Symbol VSD * Min. - Typ. - Max. 1.2 Unit V Conditions Is=3.5A, VGS=0V www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 2/6 2011.03 - Rev.A RXR035N03 Electrical characteristic curves (Ta=25C) Fig.1 Typical Output Characteristics(Ⅰ) 3 Ta=25℃ Pulsed VGS= 10V VGS= 4.5V VGS= 4.0V 　 Data Sheet Fig.2 Typical Output Characteristics(Ⅱ) 3.5 3 2.5 DRAIN CURRENT : ID[A] 2 1.5 1 0.5 VGS= 4.5V VGS= 4.0V Ta=25℃ Pulsed 2.5 VGS= 10V VGS= 2.5V DRAIN CURRENT : ID[A] 2 1.5 1 VGS= 2.5V 0.5 VGS= 2.0V 0 0 0.2 0.4 0.6 0.8 1 DRAIN-SOURCE VOLTAGE : VDS[V] VGS= 2.0V 0 0 2 4 6 8 10 DRAIN-SOURCE VOLTAGE : VDS[V] Fig.3 Typical Transfer Characteristics 10 VDS= 10V Pulsed 1 DRAIN CURRENT : ID[A] Ta= 125℃ Ta= 75°C Ta= 25°C Ta= - 25°C STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS(on)[mΩ] 1000 Fig.4 Static Drain-Source On-State Resistance vs. Drain Current(Ⅰ) Ta=25℃ Pulsed 0.1 100 . VGS= 4.0V VGS= 4.5V VGS= 10V 0.01 0.001 0 1 2 3 GATE-SOURCE VOLTAGE : VGS[V] 10 0.01 0.1 1 10 DRAIN-CURRENT : ID[A] Fig.5 Static Drain-Source On-State Resistance vs. Drain Current(Ⅱ) 1000 VGS= 10V Pulsed STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS(on)[mΩ] Ta= 125℃ Ta= 75°C Ta= 25°C Ta= - 25°C 100 1000 Fig.6 Static Drain-Source On-State Resistance vs. Drain Current(Ⅲ) STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS(on)[mΩ] VGS= 4.5V Pulsed Ta= 125℃ Ta= 75°C Ta= 25°C Ta= - 25°C 100 10 0.1 1 DRAIN-CURRENT : ID[A] 10 10 0.1 1 DRAIN-CURRENT : ID[A] 10 www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 3/6 2011.03 - Rev.A RXR035N03 　 Fig.7 Static Drain-Source On-State Resistance vs. Drain Current(Ⅳ) Fig.8 Forward Transfer Admittance vs. Drain Current 10 FORWARD TRANSFER ADMITTANCE : |Yfs| [S] Data Sheet 1000 VGS= 4.0V Pulsed STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS(on)[mΩ] Ta= 125℃ Ta= 75°C Ta= 25°C Ta= - 25°C 100 VDS= 10V Pulsed 1 Ta= 125℃ Ta= 75°C Ta= 25°C Ta= - 25°C 10 0.1 1 DRAIN-CURRENT : ID[A] Fig.9 Reverse Drain Current vs. Sourse-Drain Voltage 10 VGS=0V Pulsed SOURCE CURRENT : Is [A] 10 0.1 0.01 0.1 1 10 DRAIN-CURRENT : ID[A] Fig.10 Static Drain-Source On-State Resistance vs. Gate Source Voltage 100 Ta=25℃ Pulsed 80 ID= 3.5A 60 ID= 1.75A 1 0.1 Ta= 125℃ Ta= 75°C Ta= 25°C Ta= - 25°C STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS(ON)[mΩ] 1.5 40 20 0.01 0 0.5 1 SOURCE-DRAIN VOLTAGE : VSD [V] 0 0 2 4 6 8 10 GATE-SOURCE VOLTAGE : VGS[V] Fig.11 Switching Characteristics 10000 Ta=25°C VDD=15V VGS=10V RG=10Ω Pulsed td(off) 100 10 Fig.12 Dynamic Input Characteristics GATE-SOURCE VOLTAGE : VGS [V] 8 SWITCHING TIME : t [ns] 1000 tf 6 4 Ta=25°C VDD= 15V ID= 3.5A RG=10Ω Pulsed 0 2 4 6 8 10 10 2 td(on) 1 0.01 0.1 1 tr 0 10 DRAIN-CURRENT : ID[A] TOTAL GATE CHARGE : Qg [nC] www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 4/6 2011.03 - Rev.A RXR035N03 　 Fig.13 Typical Capacitance vs. Drain-Source Voltage Data Sheet Fig.14 Maximum Safe Operating Area 100 Operation in this area is limited by RDS(on) (VGS = 10V) 10 Drain Current : ID [ A ] PW = 100μs 1 PW = 1ms PW = 10ms 0.1 Ta=25°C Single Pulse Mounted on a ceramic board. (30mm × 30mm × 0.8mm) 0.01 DC Operation 1000 Ciss CAPACITANCE : C [pF] 100 Crss Coss Ta=25°C f=1MHz VGS=0V 10 0.01 0.1 1 10 DRAIN-SOURCE VOLTAGE : VDS[V] 100 0.1 1 10 100 Drain-Source Voltage : VDS [ V ] Fig.15 Normalized Transient Thermal Resistance v.s. Pulse Width 10 Normalized Transient Thermal Resistance : r（t） Ta=25°C Single Pulse 1 0.1 0.01 Mounted on a ceramic board. (30mm × 30mm × 0.8mm) Rth(ch-a)=125°C/W Rth(ch-a)(t)=r(t)×Rth(ch-a) 0.001 0.0001 0.001 0.01 0.1 1 10 100 1000 Pulse width : Pw (s) www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 5/6 2011.03 - Rev.A RXR035N03  Measurement circuits 　 Pulse width Data Sheet VGS ID RL D.U.T. VDS VGS VDS 50% 10% 10% 90% 50% 10% 90% RG VDD td(on) ton 90% tr td(off) toff tf Fig.1-1 Switching Time Measurement Circuit VGS Fig.1-2　Switching Waveforms VG ID RL VDS Qg VGS Qgs Qgd IG(Const.) D.U.T. VDD Charge Fig.2-1 Gate Charge Measurement Circuit Fig.2-2 Gate Charge Waveform  Notice This product might cause chip aging and breakdown under the large electrified environment. Please consider to design ESD protection circuit. www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 6/6 2011.03 - Rev.A Notice Notes Thank you for your accessing to ROHM product informations. More detail product informations and catalogs are available, please contact us. ROHM Customer Support System http://www.rohm.com/contact/ www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. R1120A