RYE002N05

0.9V Drive Nch MOSFET RYE002N05 Structure Silicon N-channel MOSFET Dimensions (Unit : mm) EMT3 (SC-75A) Features 1) High speed switing. 2) Small package(EMT3). 3) Ultra low voltage drive(0.9V drive). Abbreviated symbol : QJ Application Switching Packaging specifications Package Type Code Basic ordering unit (pieces) RYE002N05 Taping TCL 3000 Inner circuit (3) Absolute maximum ratings (Ta = 25°C) Parameter Symbol Drain-source voltage Gate-source voltage Drain current Source current (Body Diode) Power dissipation Channel temperature Range of storage temperature *1 Pw≤10µs, Duty cycle≤1% *2 Each terminal mounted on a recommended land. Limits 50 ±8 *1 Unit V V mA mA mA mA mW °C °C (1) Source (2) Gate (3) Drain (1) (2) (2) (1) Continuous Pulsed Continuous Pulsed VDSS VGSS ID IDP IS ISP PD Tch Tstg ∗1 ESD PROTECTION DIODE ∗2 BODY DIODE ±200 ±800 125 800 150 150 −55 to +150 *1 *2 Thermal resistance Parameter Channel to Ambient * Each terminal mounted on a recommended land. Symbol Rth (ch-a)* Limits 833 Unit °C / W www.rohm.com ©2011 ROHM Co., Ltd. All rights reserved. 1/5 2011.05 - Rev.B RYE002N05 Electrical characteristics (Ta = 25° C) Parameter Gate-source leakage Zero gate voltage drain current Gate threshold voltage Symbol IGSS IDSS VGS (th) Min. 50 0.3 Static drain-source on-state resistance * RDS (on) Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time *Pulsed 　 Typ. 1.6 1.7 2.0 2.2 3.0 26 6 3 5 8 17 43 Max. ±10 1 0.8 2.2 2.4 2.8 3.3 9.0 S pF pF pF ns ns ns ns Ω Unit µA V µA V Conditions VGS=±8V, VDS=0V ID=1mA, VGS=0V VDS=50V, VGS=0V VDS=10V, ID=1mA ID=200mA, VGS=4.5V ID=200mA, VGS=2.5V ID=200mA, VGS=1.5V ID=100mA, VGS=1.2V ID=10mA, VGS=0.9V ID=200mA, VDS=10V VDS=10V VGS=0V f=1MHz ID=100mA, VDD 25V VGS=4.5V RL=250Ω RG=10Ω Data Sheet Drain-source breakdown voltage V (BR)DSS l Yfs l* Ciss Coss Crss td(on) * tr * td(off) * tf * 0.2 - Body diode characteristics (Source-Drain) (Ta = 25°C) Parameter Forward Voltage *Pulsed Symbol VSD * Min. - Typ. - Max. 1.2 Unit V Conditions Is=200mA, VGS=0V www.rohm.com ©2011 ROHM Co., Ltd. All rights reserved. 2/5 2011.05 - Rev.B RYE002N05 Electrical characteristic curves (Ta = 25° C) Data Sheet 0.2 VGS= 4.5V DRAIN CURRENT : ID[A] DRAIN CURRENT : ID[A] VGS= 2.5V VGS= 1.5V VGS= 1.2V Ta=25°C Pulsed VGS= 0.7V 0 0 0.2 0.4 0.6 0.8 1 0.2 DRAIN CURRENT : ID[A] VGS= 4.5V VGS= 2.5V VGS= 1.5V VGS= 1.2V 1 VDS= 10V Pulsed Ta= 125°C Ta= 75°C Ta= 25°C Ta= − 25°C 0.1 VGS= 0.9V 0.1 VGS= 0.8V Ta=25°C Pulsed 0.1 VGS= 0.9V VGS= 0.8V 0.01 VGS= 0.7V 0 0 2 4 6 8 10 0.001 0 0.2 0.4 0.6 0.8 1 DRAIN-SOURCE VOLTAGE : VDS[V] Fig.1 Typical Output Characteristics( Ⅰ) DRAIN-SOURCE VOLTAGE : VDS[V] Fig.2 Typical Output Characteristics( Ⅱ) GATE-SOURCE VOLTAGE : VGS[V] Fig.3 Typical Transfer Characteristics STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS(on)[mΩ] STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS(on)[mΩ] Ta= 25°C Pulsed VGS= 4.5V Pulsed STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS(on)[mΩ] 10000 10000 10000 VGS= 2.5V Pulsed 1000 VGS= 0.9V VGS= 1.2V VGS= 1.5V VGS= 2.5V VGS= 4.5V 1000 Ta= 125°C Ta= 75°C Ta= 25°C Ta= − 25°C 100 0.001 0.01 0.1 1 1000 Ta= 125°C Ta= 75°C Ta= 25°C Ta= − 25°C 100 0.001 0.01 0.1 1 100 0.001 0.01 0.1 1 10 DRAIN-CURRENT : ID[A] Fig.4 Static Drain-Source On-State Resistance vs. Drain Current( Ⅰ) DRAIN-CURRENT : ID[A] Fig.5 Static Drain-Source On-State Resistance vs. Drain Current( Ⅱ) DRAIN-CURRENT : ID[A] Fig.6 Static Drain-Source On-State Resistance vs. Drain Current( Ⅲ) STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS(on)[mΩ] STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS(on)[mΩ] VGS= 1.5V Pulsed VGS= 1.2V Pulsed STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS(on)[mΩ] 10000 10000 10000 VGS= 0.9V Pulsed 1000 Ta= 125°C Ta= 75°C Ta= 25°C Ta= − 25°C 1000 Ta= 125°C Ta= 75°C Ta= 25°C Ta= − 25°C 1000 Ta= 125°C Ta= 75°C Ta= 25°C Ta= − 25°C 100 0.001 0.01 0.1 1 10 100 0.001 0.01 0.1 1 10 100 0.001 0.01 0.1 1 10 DRAIN-CURRENT : ID[A] Fig.7 Static Drain-Source On-State Resistance vs. Drain Current( Ⅳ) DRAIN-CURRENT : ID[A] Fig.8 Static Drain-Source On-State Resistance vs. Drain Current( Ⅴ) DRAIN-CURRENT : ID[A] Fig.9 Static Drain-Source On-State Resistance vs. Drain Current( Ⅵ) www.rohm.com ©2011 ROHM Co., Ltd. All rights reserved. 3/5 2011.05 - Rev.B RYE002N05 Data Sheet FORWARD TRANSFER ADMITTANCE : |Yfs| [S] SOURCE CURRENT : Is [A] VDS= 10V Pulsed VGS=0V Pulsed STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS(ON)[mΩ] 10 1 5000 4000 3000 2000 1000 0 0 2 4 6 8 ID= 0.01A ID= 0.20A Ta=25°C Pulsed 1 Ta= −25°C Ta=25°C Ta=75°C Ta=125°C 0.1 DRAIN-CURRENT : ID[A] Fig.10 Forward Transfer Admittance vs. Drain Current 1 0.1 Ta= 125°C Ta= 75°C Ta= 25°C Ta= − 25°C 0.01 0 0.5 1 1.5 0.1 0.01 SOURCE-DRAIN VOLTAGE : VSD [V] Fig.11 Reverse Drain Current vs. Sourse-Drain Voltage GATE-SOURCE VOLTAGE : VGS[V] Fig.12 Static Drain-Source On-State Resistance vs. Gate Source Voltage SWITCHING TIME : t [ns] tf 100 CAPACITANCE : C [pF] td(off) Ta=25°C VDD=25V VGS=4.5V RG=10Ω Pulsed GATE-SOURCE VOLTAGE : VGS [V] 1000 1000 4 Ta=25°C f=1MHz VGS=0V 100 Ciss 3 2 10 1 td(on) 1 0.01 tr 0.1 1 0 0 0.5 1 Ta=25°C VDD=25V ID= 0.2A RG=10Ω Pulsed 1.5 10 Crss Coss 1 0.01 0.1 1 10 100 DRAIN-CURRENT : ID[A] Fig.13 Switching Characteristics TOTAL GATE CHARGE : Qg [nC] Fig.14 Typical Capacitance vs. Drain-Source Voltage DRAIN-SOURCE VOLTAGE : VDS[V] Fig.15 Typical Capacitance vs. Drain-Source Voltage www.rohm.com ©2011 ROHM Co., Ltd. All rights reserved. 4/5 2011.05 - Rev.B RYE002N05 Measurement circuits 　 Data Sheet Pulse width VGS ID RL D.U.T. VDS VGS VDS 50% 10% 10% 90% 50% 10% 90% RG VDD td(on) ton 90% tr td(off) toff tf Fig.1-1 Switching time measurement circuit Fig.1-2 Switching waveforms Notice This product might cause chip aging and breakdown under the large electrified environment. Please consider to design ESD protection circuit. www.rohm.com ©2011 ROHM Co., Ltd. All rights reserved. 5/5 2011.05 - Rev.B Notice Notes No copying or reproduction of this document, in part or in whole, is permitted without the consent of ROHM Co.,Ltd. The content specified herein is subject to change for improvement without notice. The content specified herein is for the purpose of introducing ROHM's products (hereinafter "Products"). If you wish to use any such Product, please be sure to refer to the specifications, which can be obtained from ROHM upon request. Examples of application circuits, circuit constants and any other information contained herein illustrate the standard usage and operations of the Products. The peripheral conditions must be taken into account when designing circuits for mass production. Great care was taken in ensuring the accuracy of the information specified in this document. However, should you incur any damage arising from any inaccuracy or misprint of such information, ROHM shall bear no responsibility for such damage. The technical information specified herein is intended only to show the typical functions of and examples of application circuits for the Products. ROHM does not grant you, explicitly or implicitly, any license to use or exercise intellectual property or other rights held by ROHM and other parties. ROHM shall bear no responsibility whatsoever for any dispute arising from the use of such technical information. The Products specified in this document are intended to be used with general-use electronic equipment or devices (such as audio visual equipment, office-automation equipment, communication devices, electronic appliances and amusement devices). The Products specified in this document are not designed to be radiation tolerant. While ROHM always makes efforts to enhance the quality and reliability of its Products, a Product may fail or malfunction for a variety of reasons. Please be sure to implement in your equipment using the Products safety measures to guard against the possibility of physical injury, fire or any other damage caused in the event of the failure of any Product, such as derating, redundancy, fire control and fail-safe designs. ROHM shall bear no responsibility whatsoever for your use of any Product outside of the prescribed scope or not in accordance with the instruction manual. The Products are not designed or manufactured to be used with any equipment, device or system which requires an extremely high level of reliability the failure or malfunction of which may result in a direct threat to human life or create a risk of human injury (such as a medical instrument, transportation equipment, aerospace machinery, nuclear-reactor controller, fuelcontroller or other safety device). ROHM shall bear no responsibility in any way for use of any of the Products for the above special purposes. If a Product is intended to be used for any such special purpose, please contact a ROHM sales representative before purchasing. If you intend to export or ship overseas any Product or technology specified herein that may be controlled under the Foreign Exchange and the Foreign Trade Law, you will be required to obtain a license or permit under the Law. Thank you for your accessing to ROHM product informations. More detail product informations and catalogs are available, please contact us. ROHM Customer Support System http://www.rohm.com/contact/ www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. R1120A